MBR0520LT3

MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state−of−the−art devices have the following features: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES, 20 VOLTS SOD−123 CASE 425 STYLE 1 Features         Guardring for Stress Protection Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25C) 125C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly AEC−Q101 Qualified and PPAP Capable SBR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free*   1 B2 M G B2 MG G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Mechanical Characteristics     MARKING DIAGRAM Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Ratings:  Human Body Model = 3B  Machine Model = C ORDERING INFORMATION Package Shipping† MBR0520LT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel ** SBR80520LT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel ** MBR0520LT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel *** SBR80520LT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel *** Device ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 6 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR0520LT1/D MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (Rated VR, TL = 90C) IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +150 C Operating Junction Temperature TJ −65 to +125 C dv/dt 1000 V/ms Voltage Rate of Change (Rated VR) 0.5 5.5 ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 A A V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance; Junction−to−Ambient (Note 1) Characteristic RqJA 206 C/W Thermal Resistance; Junction−to−Lead RqJL 150 C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol vF Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 Amps) (iF = 0.5 Amps) IR Maximum Instantaneous Reverse Current (Note 2) (VR = 10 V) (Rated DC Voltage = 20 V) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2%. http://onsemi.com 2 Value Unit TJ = 25C TJ = 100C 0.300 0.385 0.220 0.330 TJ = 25C TJ = 100C 75 mA 250 mA 5 mA 8 mA V mA 10,000 1 TJ = 100C 75C 25C I R, REVERSE CURRENT (A)  iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G -25C 0.1 0.01 0.1 0.2 0.3 0.4 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 100C 1000 75C 100 0.5 0 Figure 1. Typical Forward Voltage I R, REVERSE CURRENT (A)  C, CAPACITANCE (pF) 20 25 100 150 100 50 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 1 -25C 0.1 0.01 25 TJ = +25C 10 0 P F(AV), AVERAGE POWER DISSIPATION (WATT) 1 0.875 DC 0.75 0.625 IPK = p = SQUARE WAVE IAV 0.5 5 0.375 10 0.25 20 0.125 0 60 67 74 95 102 109 81 88 LEAD TEMPERATURE (C) 116 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 Figure 4. Typical Reverse Current Figure 3. Typical Capacitance AVERAGE FORWARD CURRENT (AMP) 10 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current 200 0 5 123 130 0.35 0.315 TJ = 125C 0.28 SQUARE WAVE 0.245 IPK  + 20 10 IAV 0.21 0.175 5 DC p 0.14 0.105 0.07 0.035 0 0 Figure 5. Current Derating (Lead) 0.5 0.625 0.75 0.875 0.125 0.25 0.375 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 6. Power Dissipation http://onsemi.com 3 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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