MBR1060

MBR1060, MBR1080, MBR1090, MBR10100 MBR1060 and MBR10100 are Preferred Devices SWITCHMODEt Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features http://onsemi.com • • • • • • • • Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Pb−Free Packages are Available* SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS 3 1, 4 MARKING DIAGRAM 4 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 3 TO−220AC CASE 221B PLASTIC AY WWG B10x0 KA A Y WW G B10x0 x KA = Assembly Location = Year = Work Week = Pb−Free Package = Device Code = 6, 8, 9 or 10 = Diode Polarity ORDERING INFORMATION Device MBR1060 MBR1060G MBR1080 MBR1080G MBR1090 MBR1090G MBR10100 MBR10100G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. 1 February, 2006 − Rev. 6 Publication Order Number: MBR1060/D MBR1060, MBR1080, MBR1090, MBR10100 MAXIMUM RATINGS MBR Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 133°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg dv/dt 1060 60 1080 80 1090 90 10100 100 Unit V 10 20 150 0.5 *65 to +175 *65 to +175 10,000 A A A A °C °C V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP D/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient RqJC RqJA 2.0 60 °C/W °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. vF 0.7 0.8 0.85 0.95 iR 6.0 0.10 mA V http://onsemi.com 2 MBR1060, MBR1080, MBR1090, MBR10100 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 50 20 10 125°C 5.0 3.0 TJ = 25°C 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 150°C 100°C 10 TJ = 150°C IR , REVERSE CURRENT (mA) 125°C 100°C 1.0 0.1 0.01 0 20 25°C 40 60 80 100 120 140 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current IF(AV) , AVERAGE FORWARD CURRENT (AMPS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 110 120 130 140 150 160 RATED VOLTAGE APPLIED RqJC = 2°C/W SQUARE WAVE dc 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 SQUARE WAVE 40 60 80 100 120 140 160 180 200 dc dc (HEATSINK) RqJA = 16°C/W (NO HEATSINK) RqJA = 60°C/W RATED VOLTAGE APPLIED TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 IF(AV), AVERAGE CURRENT (AMPS) IPK/IAV = 20 SQUARE WAVE IPK/IAV = 10 IPK/IAV = 5.0 dc IPK/IAV = p TA = 25°C Figure 5. Forward Power Dissipation http://onsemi.com 3 MBR1060, MBR1080, MBR1090, MBR10100 PACKAGE DIMENSIONS TO−220 PLASTIC CASE 221B−04 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L Q R S T U INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.190 0.210 0.110 0.130 0.018 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 3.73 4.83 5.33 2.79 3.30 0.46 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 C Q B F T S 4 A 1 3 U H K L G D J R SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 MBR1060/D