MBR150

MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE − 50 AND 60 VOLTS Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band DO−41 AXIAL LEAD CASE 59 STYLE 1 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage MBR150 MBR160 Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Value Unit VRRM V 50 60 MARKING DIAGRAM VRWM VR MBR150 MBR160 Average Rectified Forward Current (Note 1) (VR(equiv) v 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) VR(RMS) 35 42 V IO 1.0 A IFSM 25 (for one cycle) A TJ, Tstg − 65 to +150 °C THERMAL CHARACTERISTICS (Notes 1 and 2) Characteristic Thermal Resistance, Junction−to−Ambient Symbol Max Unit RqJA 80 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. A MBR1x0 YYWW G G A = Assembly Location MBR1x0 = Device Code x = 5 or 6 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 8 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR150/D MBR150, MBR160 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) iR Unit V 0.550 0.750 1.000 10 mA 0.5 5.0 10 TJ = 150°C 5.0 TJ = 150°C 100°C I R , REVERSE CURRENT (mA) 7.0 25°C 5.0 3.0 2.0 1.0 125°C 2.0 1.0 100°C 0.5 0.2 0.1 75°C 0.05 0.02 0.01 25°C 0.005 0.002 0.001 0.7 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) 0.5 60 70 Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 5.0 0.1 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) Max 0.07 0.05 0.03 0.02 0 SQUARE WAVE 4.0 3.0 dc p 2.0 5 10 IPK/IAV = 20 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation http://onsemi.com 2 5.0 MBR150, MBR160 THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 ZqJL(t) = ZqJL • r(t) 0.2 Ppk Ppk tp 0.1 TIME 0.07 0.05 t1 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 90 100 t, TIME (ms) Figure 4. Thermal Response . 90 200 BOTH LEADS TO HEATSINK, EQUAL LENGTH TJ = 25°C f = 1 MHz 70 C, CAPACITANCE (pF) R qJL , THERMAL RESISTANCE, JUNCTION−TO−LEAD (° C/W) 80 60 MAXIMUM 50 TYPICAL 40 30 100 80 70 60 50 40 30 20 10 20 1/8 0 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0 10 20 30 40 50 60 70 80 L, LEAD LENGTH (INCHES) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Steady−State Thermal Resistance Figure 6. Typical Capacitance NOTE 1. — MOUNTING DATA: NOTE 2. — THERMAL CIRCUIT MODEL: (For heat conduction through the leads) Data shown for thermal resistance junction−to−ambient (RqJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. RqS(A) TA(A) Lead Length, L (in) 1/8 1/4 1/2 3/4 1 52 65 72 85 °C/W 2 67 80 87 100 °C/W 3 — RqL(K) RqJ(K RqS(K) RqJA °C/W http://onsemi.com 3 TA(K) PD TL(A) Mounting Method RqJ(A) ) Typical Values for RqJA in Still Air 50 RqL(A) TC(A) TJ TC(K) TL(K) MBR150, MBR160 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 100°C/W/in typically and 120°C/W/in maximum. RqJ = 36°C/W typically and 46°C/W maximum. TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heatsink−to−Ambient RqL = Thermal Resistance, Lead−to−Heatsink RqJ = Thermal Resistance, Junction−to−Case PD = Power Dissipation Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. Mounting Method 3 Mounting Method 1 P.C. Board with 1−1/2″ x 1−1/2″ copper surface. É É ÉÉÉÉÉÉÉÉ É É É ÉÉÉÉÉÉÉÉ L L Mounting Method 2 L NOTE 3. — HIGH FREQUENCY OPERATION: P.C. Board with 1−1/2″ x 1−1/2″ copper surface. L = 3/8″ BOARD GROUND PLANE L VECTOR PIN MOUNTING ORDERING INFORMATION Package Shipping † MBR150 Axial Lead* 1000 Units / Bag MBR150G Axial Lead* 1000 Units / Bag MBR150RL Axial Lead* 5000 / Tape & Reel MBR150RLG Axial Lead* 5000 / Tape & Reel MBR160 Axial Lead* 1000 Units / Bag MBR160G Axial Lead* 1000 Units / Bag MBR160RL Axial Lead* 5000 / Tape & Reel MBR160RLG Axial Lead* 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U DATE 15 FEB 2005 B K STYLE 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D STYLE 2 F A SCALE 1:1 POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY A xxx xxx YYWW STYLE 1 xxx A YY WW A xxx xxx YYWW STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42045B AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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