MBR1535CTG

MBR1535CTG, MBR1545CTG Switch-mode Power Rectifier Features and Benefits • • • • • • • www.onsemi.com Center−Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 15 A Total (7.5 A Per Diode Leg) These Devices are Pb−Free and are RoHS Compliant* SCHOTTKY BARRIER RECTIFIERS 15 AMPERES 35 and 45 VOLTS 1 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 MARKING DIAGRAM Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 4 TO−220 CASE 221A STYLE 6 1 2 AYWW MBR15x5CTG AKA 3 A Y WW x G AKA = Assembly Location = Year = Work Week = 3 or 4 = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 9 1 Publication Order Number: MBR1535CT/D MBR1535CTG, MBR1545CTG MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1535CT MBR1545CT VRRM VRWM VR Average Rectified Forward Current (TC = 163°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 161°C) Value Unit V 35 45 A 7.5 15 IFRM 15 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C TJ −65 to +175 °C dv/dt 1000 V/ms Per Diode Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS PER DIODE Characteristic Symcbol Value Unit Maximum Thermal Resistance, Junction−to−Case (Min. Pad) RqJC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad) RqJA 60 °C/W ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 7.5 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR Min Typ Max − − − 0.47 0.63 0.66 0.57 0.72 0.84 − − 10 0.025 15 0.1 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device Package Shipping MBR1535CTG TO−220 (Pb−Free) 50 Units / Rail MBR1545CTG TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F i , INSTANTANEOUS FORWARD CURRENT (AMPS) F MBR1535CTG, MBR1545CTG 100 10 TJ = 150°C 125°C 1.0 75°C 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 100 10 TJ = 150°C 125°C 1.0 75°C 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage Figure 1. Typical Forward Voltage 100 100 TJ = 150°C 10 I , REVERSE CURRENT (mA) R I , REVERSE CURRENT (mA) R TJ = 150°C 125°C 100°C 1.0 75°C 0.1 25°C 0.01 0.001 0 10 20 125°C 10 100°C 1.0 75°C 0.1 25°C 0.01 30 0.001 50 40 0 10 VR, REVERSE VOLTAGE (VOLTS) , AVERAGE FORWARD CURRENT (AMPS) dc 10 SQUARE WAVE 8.0 6.0 4.0 F (AV) 2.0 145 150 155 160 165 170 I , AVERAGE FORWARD CURRENT (AMPS) F (AV) I 14 140 50 40 Figure 4. Maximum Reverse Current 16 0 135 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 12 20 175 16 RATED VOLTAGE APPLIED 14 RqJA = 16° C/W RqJA = 60° C/W (NO HEATSINK) dc 12 10 8.0 dc SQUARE WAVE 6.0 4.0 2.0 0 0 TC, CASE TEMPERATURE (C°) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg www.onsemi.com 3 175 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 900 TJ = 175°C TJ = 25°C f = 1 MHz 800 SQUARE WAVE 700 C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) MBR1535CTG, MBR1545CTG dc 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Capacitance Figure 7. Forward Power Dissipation www.onsemi.com 4 50 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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