MBR1635

MBR1635, MBR1645, MBRB1645, NRVBB1645 Switch-mode Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant TO−220AC CASE 221B PLASTIC 1 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams for TO−220 • • MARKING DIAGRAMS 4 3 AYWWG B16x5 KA 1, 4 3 A Y WW B16x5 x KA G 1.7 Grams for D2PAK Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Diode Polarity = Pb−Free Package MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1635 MBR1645 MBRB1645 VRRM VRWM VR Average Rectified Forward Current Delay (Rated VR, TC = 163°C) Total Device IF(AV) Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz, TC = 157°C) Total Device IFRM 32 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C TJ −65 to +175 °C dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Value Unit V April, 2014 − Rev. 12 D2PAK CASE 418B STYLE 3 B1645G AYWW 1 35 45 45 1 3 4 3 A 16 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2014 4 1 B1645 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR1635G TO−220 (Pb−Free) 50 Units / Rail MBR1645G TO−220 (Pb−Free) 50 Units / Rail MBRB1645T4G D2PAK (Pb−Free) 800 Units / Rail NRVBB1645T4G D2PAK (Pb−Free) 800 Units / Rail Publication Order Number: MBR1635/D MBR1635, MBR1645, MBRB1645, NRVBB1645 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Case Symbol Value Unit RqJC 1.5 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 16 Amps, TC = 125°C) (iF = 16 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.57 0.63 mA 40 0.2 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 100 70 1.0E−01 50 1.0E−02 IR, REVERSE CURRENT (A) TJ = 150°C TJ = 125°C 30 20 125°C 1.0E−03 100°C 25°C 10 7.0 5.0 1.0E−04 1.0E−05 3.0 2.0 25°C 1.0E−06 1.0E−07 1.0 0.2 0.6 0.4 0.8 0 1.0 10 20 30 40 vF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 28 dc 26 24 22 20 SQUARE 18 16 14 12 10 8 6 4 2 0 145 150 50 20 18 IF(AV), AVERAGE FORWARD CURRENT (A) 0 RqJA = 16°C/W RqJA = 60°C/W (No Heat Sink) dc 16 14 12 10 8 dc 6 4 SQUARE WAVE 2 0 155 160 165 170 0 175 25 TC, CASE TEMPERATURE (°C) 50 75 SQUARE WAVE I (RESISTIVE LOAD) PK + p I AV 12 I PK + 5.0 10 (CAPACITATIVELOAD) I dc AV 8.0 10 6.0 20 4.0 TJ = 125°C 2.0 0 0 2.0 4.0 125 150 Figure 4. Current Derating, Ambient 16 14 100 TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Case, Per Leg PF(AVE) , AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) MBR1635, MBR1645, MBRB1645, NRVBB1645 6.0 8.0 10 12 14 16 18 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation http://onsemi.com 3 20 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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