MBR3100RLG

MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES, 100 VOLTS Features • • • • • • • • • http://onsemi.com Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature High Surge Capacity Pb−Free Packages are Available* AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band MARKING DIAGRAM A MBR 3100 YYWWG G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TA = 100°C (RqJA = 28°C/W, Refer to P.C. Board Mounting, Note 3) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating and Storage Junction Temperature Range (Note 1) (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Symbol Max Unit VRRM VRWM VR 100 V IO 3.0 A IFSM 150 A TJ, Tstg −65 to +175 °C dv/dt 10 V/ns *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. June, 2006 − Rev. 6 ORDERING INFORMATION Package Shipping † MBR3100 Axial Lead 500 Units / Bag MBR3100G Axial Lead (Pb−Free) 500 Units / Bag MBR3100RL Axial Lead 1500/Tape & Reel MBR3100RLG Axial Lead (Pb−Free) 1500/Tape & Reel Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2006 A = Assembly Location YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR3100/D MBR3100 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3) Symbol Max Unit RqJA 28 °C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 Amps, TL = 25°C) (iF = 3.0 Amps, TL = 100°C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25°C TL = 100°C iR V 0.79 0.69 mA 0.6 20 50 30 20 1 0.5 I , REVERSE CURRENT (mA) R i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. TJ = 150°C 10 100°C 5 3 2 25°C 1 0.1 125°C 0.05 0.02 0.01 100°C 0.005 0.5 0.3 0.2 0.002 0.001 0.0005 0.1 0.05 TJ = 150°C 0.2 25°C 0.0002 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 70 30 40 50 60 80 VR REVERSE VOLTAGE (VOLTS) 90 100 Figure 2. Typical Reverse Current* Figure 1. Typical Forward Voltage PF (AV), AVERAGE POWER DISSIPATION (WATTS) I F (AV) , AVERAGE FORWARD CURRENT (AMPS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 8 7 6 5 dc 4 SQUARE WAVE 3 2 1 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) 180 4 3.5 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 Figure 3. Current Derating (Mounting Method #3 per Note 3) 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Power Dissipation http://onsemi.com 2 dc 5.0 MBR3100 400 C, CAPACITANCE (pF) 300 200 TJ = 25°C f = 1 MHz 100 80 50 40 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance NOTE 3 — MOUNTING DATA Data shown for thermal resistance junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RqJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 3 °C/W 28 Mounting Method 1 Mounting Method 2 P.C. Board where available copper surface is small. Vector Push−In Terminals T−28 L ÉÉÉÉÉÉÉÉÉÉÉÉÉ L L ÉÉÉÉÉÉÉÉÉÉÉ Mounting Method 3 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ P.C. Board with 2−1/2″ X 2−1/2″ copper surface. L = 1/2’’ Board Ground Plane http://onsemi.com 3 L MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G DATE 06/06/2000 SCALE 1:1 K D NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. A 1 2 B K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: DIM A B D K 98ASB42170B AXIAL LEAD INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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