MBRA130LT3G

MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package www.onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS Features • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SMA CASE 403D PLASTIC MARKING DIAGRAM B1L3 AYWWG Mechanical Characteristics: • • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) B1L3 = Specific Device Code A = Assembly Location*** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ***The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRA130LT3G SMA (Pb−Free) 5,000 / Tape & Reel ** NRVBA130LT3G* SMA (Pb−Free) 5,000 / Tape & Reel ** Device ** 12 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 April, 2017 − Rev. 9 1 Publication Order Number: MBRA130LT3/D MBRA130LT3G, NRVBA130LT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 105°C) Symbol Value Unit VRRM VRWM VR 30 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Tstg −55 to +150 TJ −55 to +125 °C dv/dt 10,000 V/ms Operating Junction Temperature Voltage Rate of Change, (Rated VR, TJ = 25°C) 2.0 25 A A °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction−to−Lead (Note 1) Thermal Resistance — Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 35 86 °C/W 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Characteristic VF Maximum Instantaneous Forward Voltage (Note 2) (IF = 1.0 A) see Figure 2 (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (VR = 30 V) see Figure 4 (VR = 15 V) Value Unit TJ = 25°C TJ = 100°C 0.41 0.47 0.35 0.43 TJ = 25°C TJ = 100°C 1.0 0.4 25 12 Volts mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) MBRA130LT3G, NRVBA130LT3G 10 TJ = 125°C 1.0 TJ = 85°C TJ = 25°C TJ = -40°C 0.1 0 0.2 0.4 0.6 0.8 1.0 TJ = 125°C 1.0 TJ = 85°C TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0 100E-3 I R , MAXIMUM REVERSE CURRENT (AMPS) 100E-3 I R , REVERSE CURRENT (AMPS) 10 10E-3 TJ = 125°C 1.0E-3 TJ = 85°C 100E-6 10E-3 1.0E-3 TJ = 85°C TJ = 25°C 100E-6 10E-6 TJ = 25°C 1.0E-6 0 10 20 30 10E-6 1.0E-6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 3 30 MBRA130LT3G, NRVBA130LT3G 1.8 dc 1.6 1.4 SQUARE WAVE 1.2 1.0 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) PFO , AVERAGE POWER DISSIPATION (WATTS) FREQ = 20 kHz 20 40 60 80 100 120 0.6 dc SQUARE WAVE 0.5 Ipk/Io = p 0.4 Ipk/Io = 5 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1.6 T, TIME (s) 1.0E+0 100E-3 10E-3 1.0E-3 100E-6 10E-6 100E-6 10E-3 1.0E-3 100E-3 10E+0 1.0E+0 T, TIME (s) Figure 7. Thermal Response 1000 C, CAPACITANCE (pF) IO , AVERAGE FORWARD CURRENT (AMPS) 2.0 TJ = 25°C 100 10 1.0 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.onsemi.com 4 35 40 100E+0 1.0E+3 MBRA130LT3G, NRVBA130LT3G PACKAGE DIMENSIONS SMA CASE 403D ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 A L A1 c SOLDERING FOOTPRINT* 4.000 0.157 2.000 0.079 2.000 0.079 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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