MBRB1045

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G www.onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. 1 4 3 Features • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! SBRB and SBRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 grams for D2PAK (approximately) MARKING DIAGRAM 4 AY WW MBRB1045G AKA 1 3 D2PAK−3 CASE 418B A Y WW MBRB1045 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity 0.4 grams for DPAK (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) 4 1 2 3 DPAK CASE 369C A Y WW B1045 G MARKING DIAGRAM AYWW B10 45G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 August, 2020 − Rev. 11 1 Publication Order Number: MBRB1045/D MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current, TC = 135°C IF(AV) 10 A Peak Repetitive Forward Current (Square Wave, Duty = 0.5) TC = 135°C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 (MBRB/SBRB) 70 (MBRD/SBRD) TJ, Tstg −65 to +175 °C dv/dt 10000 V/ms Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) A 20 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, (MBRB1045G) Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) (MBRD1045G) Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) Value Unit °C/W RqJC RqJA 1.0 50 RqJC RqJA 2.43 68 Symbol Value 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 10 Amps, TJ = 125°C) (IF = 20 Amps, TJ = 125°C) (IF = 20 Amps, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) IR Unit V 0.57 0.72 0.84 mA 15 0.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device Package MBRB1045G SBRB1045G MBRB1045T4G 50 Units / Rail D2PAK−3 (Pb−Free) SBRB1045T4G SBRD81045T4G 50 Units / Rail 800 Units / Tape & Reel 800 Units / Tape & Reel MBRD1045G MBRD1045T4G Shipping† 50 Units / Rail DPAK (Pb−Free) SSBRD81045T4G 2,500 Units / Tape & Reel 2,500 Units / Tape & Reel 2,500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 100 100 TJ = 150°C TJ = 150°C 70 70 100°C 25°C 100°C 50 25°C 30 30 20 20 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 50 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.1 0.2 0.4 0.6 0.8 1.2 1.0 1.4 0.2 0.4 0.6 0.8 1.2 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage 100 100 IR , REVERSE CURRENT (mA) TJ = 150°C IR , REVERSE CURRENT (mA) 1.4 125°C 10 100°C 1.0 75°C 0.1 25°C 150°C 10 125°C 1.0 100°C 75°C 0.1 0.01 0.01 25°C 0.001 0.001 0 5.0 10 15 20 25 30 35 40 45 0 50 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current www.onsemi.com 3 45 50 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 1400 C, CAPACITANCE (pF) 1200 100 70 50 30 800 600 400 200 0 20 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 1000 2.0 3.0 5.0 7.0 10 20 30 50 0 70 100 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance 18 RATED VOLTAGE APPLIED 16 14 dc 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 130 20 10 NUMBER OF CYCLES AT 60 Hz PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 200 135 140 145 150 155 TC, CASE TEMPERATURE (°C) 50 10 9.0 dc 8.0 7.0 SQUARE WAVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Figure 6. Current Derating, Case, RqJC = 1.0 °C/W 2.0 4.0 6.0 8.0 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation www.onsemi.com 4 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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