MBRB2515LT4

MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 15 VOLTS Features • • • • • • • Guardring for Stress Protection Low Forward Voltage 100°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared Similar in Size to the Industry Standard TO−220 Package Pb−Free Packages are Available 1 4 3 4 1 Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) 3 D2PAK CASE 418B STYLE 3 MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit AY WW Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 15 V B2515LG AKA Average Rectified Forward Current (Rated VR, TC = 90°C) IF(AV) 25 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 100°C) IFRM 30 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ 100 °C dv/dt 10,000 V/ms Rating Voltage Rate of Change (Rated VR) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 6 1 A Y WW B2515L G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB2515L/D MBRB2515L THERMAL CHARACTERISTICS Characteristic Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1) 1. When mounted using minimum recommended pad size on FR−4 board. Symbol Value Unit RqJC RqJA 1.0 50 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 19 Amps, TJ = 70°C) (iF = 25 Amps, TJ = 70°C) (iF = 25 Amps, TJ = 25°C) vF V 0.38 0.42 0.45 Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 70°C) (Rated dc Voltage, TJ = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. IR mA 200 15 ORDERING INFORMATION Package Shipping † D2PAK 50 Units / Rail MBRB2515LG D2PAK (Pb−Free) 50 Units / Rail MBRB2515LT4 D2PAK 800 Units / Tape & Reel D2PAK (Pb−Free) 800 Units / Tape & Reel Device MBRB2515L MBRB2515LT4G 50 30 20 IR , REVERSE LEAKAGE CURRENT (mA) 70°C TJ = 25°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1000 400 200 100 0.1 0 TJ = 100°C 40 20 10 70°C 4.0 2.0 1.0 25°C 0.4 0.2 0.1 0.04 0.02 0.01 0.5 0.1 0.2 0.3 0.4 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 Figure 1. Typical Forward Voltage 40 SQUARE WAVE TJ = 70°C 35 30 p 25 I PK 20 I + 10 5.0 dc AV 15 10 5.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 VR, REVERSE VOLTAGE (VOLTS) 18 20 Figure 2. Typical Reverse Leakage Current I F(AV) , AVERAGE FORWARD CURRENT (AMPS) PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5.0 10 15 20 25 30 35 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 40 40 RATED VOLTAGE APPLIED RqJC = 1°C/W 35 30 25 dc 20 SQUARE WAVE 15 10 5.0 0 60 Figure 3. Typical Forward Power Dissipation 65 70 75 80 85 90 TC, CASE TEMPERATURE (°C) Figure 4. Current Derating, Case SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. http://onsemi.com 2 95 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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