MBRD835LG

Switch-mode Power Rectifier DPAK Surface Mount Package MBRD835L, SBRD8835L This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features • • • • • • • Low Forward Voltage 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Compact Size Lead Formed for Surface Mount SBRD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS DPAK CASE 369C 1 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 75 Units Per Plastic Tube ESD Rating: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) 4 3 AYWW B 835LG B835LG A Y WW G = Specific Device Number = Assembly Location* = Year = Work Week = Pb−Free Device * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRD835LG DPAK (Pb−Free) 75 Units / Rail SBRD8835LG DPAK (Pb−Free) 75 Units / Rail SBRD8835LG−VF01 DPAK (Pb−Free) 75 Units / Rail MBRD835LT4G DPAK (Pb−Free) 2,500 / Tape & Reel SBRD835LT4G−VF01 DPAK (Pb−Free) 2,500 / Tape & Reel SBRD8835LT4G DPAK (Pb−Free) 2,500 / Tape & Reel SBRD8835LT4G−VF01 DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure BRD8011/D © Semiconductor Components Industries, LLC, 2012 August, 2020 − Rev. 13 1 Publication Order Number: MBRD835L/D MBRD835L, SBRD8835L MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 35 V Average Rectified Forward Current (TC = 88°C) IF(AV) Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C) IFRM Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax) IAR Storage / Operating Case Temperature Tstg −65 to +150 TJ −65 to +150 °C dv/dt 10,000 V/s Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) 8.0 16 75 2.0 A A A A °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Case RJC 2.8 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) RJA 80 °C/W Symbol Value Unit 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 8 Amps, TC = + 25°C) (iF = 8 Amps, TC = +125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = + 25°C) (Rated dc Voltage, TC = +100°C) IR 0.51 0.41 1.4 35 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%. www.onsemi.com 2 MBRD835L, SBRD8835L IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (mA) TYPICAL CHARACTERISTICS 10 TJ = 125°C 25°C 1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 10 TJ = 125°C 1 75°C 0.1 25°C 0.01 0 Figure 1. Maximum Forward Voltage 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 Figure 2. Typical Forward Voltage 1000 TJ = 125°C 10 100°C I R, REVERSE CURRENT (mA) I R, REVERSE CURRENT (mA) 100 100 1 25°C 0.1 TJ = 125°C 100°C 10 1 75°C 0.1 0.01 0.001 25°C 0 5 10 15 20 25 VF, REVERSE VOLTAGE (VOLTS) 30 0.01 35 0 Figure 3. Maximum Reverse Current 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Typical Reverse Current www.onsemi.com 3 35 MBRD835L, SBRD8835L TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C TYPICAL MAXIMUM 1000 100 1 10 VR, REVERSE VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Maximum and Typical Capacitance 16 14.4 TJ = 125°C 12.8 RJA = 6°C/W dc  (RESISTIVE LOAD) 11.2 9.6 SQUARE WAVE (CAPACITIVE IPK +5 LOAD) IAV 8 6.4 4.8 10 3.2 1.6 0 20 80 85 90 95 100 105 110 115 TC, CASE TEMPERATURE (°C) 120 125 130 8 TJ = 125°C 7 dc 6  (RESISTIVE LOAD) 5 P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 4 TJ = 125°C  (RESISTIVE LOAD) 3.5 3 SQUARE WAVE 2.5 RJA = 80°C/W SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE (CAPACITIVE IPK +5 LOAD) IAV 2 1.5 10 1 20 0.5 0 0 10 20 (CAPACITIVE IPK +5 LOAD) IAV SQUARE WAVE 3 2 10 1 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating 5 dc SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE 4 Figure 6. Current Derating, Infinite Heatsink 4.5 RJA = 40°C/W 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) 8 TJ = 125°C 7  (RESISTIVE LOAD) (CAPACITIVE IPK +5 LOAD) IAV 6 SQUARE WAVE dc 5 10 4 20 3 2 1 0 0 Figure 8. Current Derating, Free Air 1.5 3 4.5 6 7.5 9 10.5 12 13.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Forward Power Dissipation www.onsemi.com 4 15 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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