MBRM110ET3G

MBRM110E Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 10 VOLTS ANODE CATHODE Features: • • • • • POWERMITE CASE 457 PLASTIC Low IR Extends Battery Life Low Profile – Maximum Height of 1.1 mm Small Footprint – Footprint Area of 8.45 mm2 150°C Operating Junction Temperature Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink MARKING DIAGRAM Mechanical Characteristics: • • • • • M 1E1 Powermite is JEDEC Registered as D0–216AA Case: Molded Epoxy Epoxy Meets UL 94V–O at 1/8″ Weight: 62 mg (approximately) Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds 1E1 = Device Code M = Date Code ORDERING INFORMATION MAXIMUM RATINGS Device Please See the Table on the Following Page Package MBRM110ET1 POWERMITE Shipping 3,000/Tape & Reel MBRM110ET3 POWERMITE 12,000/Tape & Reel  Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 0 1 Publication Order Number: MBRM110E/D MBRM110E MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 10 V Average Rectified Forward Current (TL = 100°C) IO 1.0 A Non–Repetitive Peak Surge Current (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg –55 to +150 °C Operating Junction Temperature TJ –55 to +150 °C dv/dt 10,000 V/
s Rtjl Rtjtab Rtja 35 23 277 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Lead (Anode) (Note 1) Thermal Resistance – Junction–to–Tab (Cathode) (Note 1) Thermal Resistance – Junction–to–Ambient (Note 1) ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 2) (VR = 5.0 V) (VR = 10 V) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25°C TJ = 100°C 0.5 1.0 300 500 V
A 10 TJ = 150°C TJ = 25°C TJ = 100°C TJ = -40°C 1.0 0.1 0.4 0.2 0.6 0.8 TJ = 150°C TJ = 100°C 1.0 0.1 TJ = 25°C 0.2 0.4 0.6 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage I R, MAXIMUM REVERSE CURRENT (AMPS) 100E-3 10E-3 1E-3 TJ = 150°C 100E-6 1E-6 100E-9 2.5 5 TJ = 150°C 1E-3 TJ = 100°C 10E-6 TJ = 25°C 1E-6 100E-9 TJ = 25°C 0 10E-3 100E-6 TJ = 100°C 10E-6 10E-9 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRM110E 10 7.5 10E-9 0 2.5 5 7.5 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 10 FREQ = 20 kHz dc 1.6 PFO , AVERAGE POWER DISSIPATION (WATTS) 1.8 1.4 SQUARE WAVE 1.2 1.0 Ipk/Io =  0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 45 65 85 105 125 145 0.7 0.6 Ipk/Io =  0.5 dc SQUARE WAVE Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 165 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 C, CAPACITANCE (pF) I O , AVERAGE FORWARD CURRENT (AMPS) MBRM110E TJ = 25°C 100 10 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 8 9 10 1.6 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM110E 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% 0.001 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Thermal Response Junction to Lead 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) Figure 9. Thermal Response Junction to Ambient 0.025 0.635 0.105 2.67 0.030 0.762 0.100 2.54 0.050 1.27 inches mm Minimum Recommended Footprint http://onsemi.com 5 100 1,000 MBRM110E PACKAGE DIMENSIONS POWERMITE PLASTIC PACKAGE CASE 457–04 ISSUE D F 0.08 (0.003) C –A– J M T B S TERM. 1 –B– K TERM. 2 R L J D H –T– 0.08 (0.003) M T B S C S http://onsemi.com 6 S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF MBRM110E Notes http://onsemi.com 7 MBRM110E POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MBRM110E/D