MBRS1540T3

MBRS1540T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.5 AMPERES, 40 VOLTS Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Over−Voltage Protection Low Forward Voltage Drop These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SMB CASE 403A Mechanical Characteristics • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 100°C) IO 1.5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) IFRM 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC −55 to +150 °C TJ −55 to +125 °C dv/dt 10,000 V/ms Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) MARKING DIAGRAM AYWW BGJG G BGJ A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS1540T3G Package Shipping† SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 February, 2018 − Rev. 4 1 Publication Order Number: MBRS1540T3/D MBRS1540T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) RqJL 24 RqJA 80 ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 (iF = 1.5 A) (iF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 3) see Figure 4 (VR = 40 V) (VR = 20 V) TJ = 25°C TJ = 125°C 0.46 0.54 0.39 0.54 TJ = 25°C TJ = 100°C 0.8 0.1 5.7 1.6 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRS1540T3 10 TJ = 125°C 25°C 1.0 100°C -40°C 0.1 0.1 0.3 0.5 0.9 0.7 TJ = 125°C 1.0 100°C 25°C 0.1 0.3 0.1 0.5 0.9 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 10E-3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 TJ = 125°C 1.0E-3 100°C 10E-3 TJ = 125°C 1.0E-3 100°C 100E-6 100E-6 10E-6 25°C 1.0E-6 0 10 20 1.0E-6 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current PFO , AVERAGE POWER DISSIPATION (WATTS) FREQ = 20 kHz dc 2.0 SQUARE WAVE 1.5 Ipk/Io = p Ipk/Io = 5.0 1.0 Ipk/Io = 10 Ipk/Io = 20 0.5 0 25 25°C 10E-6 40 30 2.5 IO , AVERAGE FORWARD CURRENT (AMPS) 100 45 65 85 105 1.2 dc 1.0 SQUARE WAVE Ipk/Io = p 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 125 0.5 1.0 1.5 2.0 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 2.5 MBRS1540T3 TJ , DERATED OPERATING TEMPERATURE ( °C) 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 5.0 10 15 20 25 30 35 125 Rtja = 24°C/W 115 43°C/W 105 63°C/W 95 80°C/W 85 93°C/W 75 65 40 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0E+00 50% 1.0E-01 20% 10% 5.0% 1.0E-02 2.0% 1.0% 1.0E-03 Rtjl(t) = Rtjl*r(t) 1.0E-04 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (s) 1.0E+00 1.0E-01 Figure 9. Thermal Response — Junction to Case 50% 20% 10% 5.0% 1.0E-02 2.0% 1.0E-03 1.0% Rtjl(t) = Rtjl*r(t) 1.0E-04 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 10. Thermal Response — Junction to Ambient www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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