MBRS260T3

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Features • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Over−Voltage Protection Low Forward Voltage Drop NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices SMB CASE 403A MARKING DIAGRAM Mechanical Characteristics • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B AYWW B26G G B26 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† SMB (Pb−Free) 2,500 / Tape & Reel MBRS260T3G NRVBS260T3G* NRVBS260T3G−VF01* NRVBS260NT3G* SRVBS260NT3G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 February, 2020 − Rev. 10 1 Publication Order Number: MBRS260T3/D MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 95°C) Symbol Value Unit VRRM VRWM VR 60 V IO 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) 60 dv/dt 10,000 A V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit RqJL RqJA 24 80 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol vF Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3) IR (VR = 60 V) Value Unit TJ = 25°C TJ = 125°C 0.51 0.63 0.475 0.55 TJ = 25°C TJ = 125°C 0.2 20 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N TYPICAL CHARACTERISTICS 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TA = 150°C TA = 125°C 1 TA = 25°C TA = 75°C TA = −40°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TA = 150°C TA = 125°C 1 TA = 75°C TA = −40°C 0.1 0.0 0.8 TA = 25°C Figure 1. Typical Forward Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.8 Figure 2. Maximum Forward Voltage 1.0E−01 100 TA = 150°C TA = 125°C 1.0E−03 25°C f = 1 MHz C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) 1.0E−02 TA = 75°C 1.0E−04 TA = 25°C 1.0E−05 1.0E−06 1.0E−07 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 10 60 0 PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) RqJL = 24°C/W 2.5 2 SQUARE WAVE 1.5 1 0.5 0 60 70 80 90 100 110 120 130 TL, LEAD TEMPERATURE (°C) 30 40 50 60 2.5 3 Figure 4. Typical Capacitance 3.5 dc 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 3 10 140 150 2 1.8 1.6 dc 1.4 1.2 1 SQUARE WAVE 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating − Junction to Lead Figure 6. Forward Power Dissipation www.onsemi.com 3 RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N 1.0E+00 50% 20% 1.0E−01 10% 5.0% 1.0E−02 2.0% 1.0% 1.0E−03 1.0E−04 1.0E+00 1.0E−01 Rtjl(t) = Rtjl*r(t) 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 t, TIME (s) Figure 7. Thermal Response − Junction to Case 50% 20% 10% 5.0% 1.0E−02 2.0% 1.0E−03 1.0% 1.0E−04 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 8. Thermal Response − Junction to Ambient www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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