MC100EL31DTR2

5 V ECL D Flip‐Flop with Set and Reset MC10EL31, MC100EL31 Description The MC10EL/100EL31 is a D flip-flop with set and reset. The device is functionally equivalent to the E131 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E131, the EL31 is ideally suited for those applications which require the ultimate in AC performance. Both set and reset inputs are asynchronous, level triggered signals. Data enters the master portion of the flip-flop when clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. The 100 Series contains temperature compensation. www.onsemi.com 8 1 SOIC−8 NB D SUFFIX CASE 751−07 MARKING DIAGRAMS* Features 8 • 475 ps Propagation Delay • 2.8 GHz Toggle Frequency • ESD Protection: > 1 kV Human Body Model ♦ > 100 V Machine Model PECL Mode Operating Range: VCC = 4.2 V to 5.7 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −4.2 V to −5.7 V Internal Input Pulldown Resistors on D, CLK, S, and R Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test Moisture Sensitivity: ♦ Level 1 for SOIC−8 NB ♦ For Additional Information, see Application Note AND8003/D Flammability Rating: UL 94 V−0 @ 0.125 in, Oxygen Index: 28 to 34 Metastability 125 ps (see Application Note AN1504) Transistor Count = 79 Devices These Devices are Pb-Free, Halogen Free and are RoHS Compliant 1 ♦ • • • • • • • • • HEL31 ALYW G 8 1 H K A L Y W G KEL31 ALYW G = MC10 = MC100 = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION Device Package Shipping† MC10EL31DG SOIC−8 NB (Pb-Free) 98 Units / Tube MC10EL31DR2G SOIC−8 NB (Pb-Free) 2500 / Tape & Reel MC100EL31DG SOIC−8 NB (Pb-Free) 98 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 March, 2021 − Rev. 8 1 Publication Order Number: MC10EL31/D MC10EL31, MC100EL31 Table 1. TRUTH TABLE S 1 D 2 CLK 3 8 S D VCC D S* R* CLK Q 7 Q L H X X X L L H L H L L L H H Z Z X X X L H H L Undef 6 Q Z = LOW to HIGH Transition * Pins will default low when left open. R R 4 Table 2. PIN DESCRIPTION 5 PIN VEE S D R CLK Q, Q VCC VEE Figure 1. Logic Diagram and Pinout Assignment FUNCTION ECL Set Input ECL Data Input ECL Reset Input ECL Clock Input ECL Data Outputs Positive Supply Negative Supply Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 VCC PECL Mode Power Supply- VEE = 0 V VEE NECL Mode Power Supply VCC = 0 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V Iout Output Current Continuous Surge Condition 2 VI ≤ VCC VI ≥ VEE Rating Unit 8 V −8 V 6 −6 V 50 100 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MC10EL31, MC100EL31 Table 4. 10EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 27 32 27 32 27 32 mA VOH Output HIGH Voltage (Note 2) 3920 4010 4110 4020 4105 4190 4090 4185 4280 mV VOL Output LOW Voltage (Note 2) 3050 3200 3350 3050 3210 3370 3050 3227 3405 mV VIH Input HIGH Voltage 3770 4110 3870 4190 3940 4280 mV VIL Input LOW Voltage 3050 3500 3050 3520 3050 3555 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.3 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V. 2. Outputs are terminated through a 50 ohm resistor to VCC−2 volts. Table 5. 10EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Typ Max 27 32 −1080 −990 −890 Output LOW Voltage (Note 2) −1950 −1800 VIH Input HIGH Voltage VIL Input LOW Voltage IIH Input HIGH Current IIL Input LOW Current Symbol Characteristic IEE Power Supply Current VOH Output HIGH Voltage (Note 2) VOL Min 25°C Min 85°C Typ Max 27 32 −980 −895 −810 −1650 −1950 −1790 −1230 −890 −1950 −1500 Typ Max Unit 27 32 mA −910 −815 −720 mV −1630 −1950 −1773 −1595 mV −1130 −810 −1060 −720 mV −1950 −1480 −1950 −1445 mV 150 mA 150 0.5 Min 150 0.5 0.3 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V. 2. Outputs are terminated through a 50 ohm resistor to VCC−2 volts. Table 6. 100EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 27 32 Min 85°C Typ Max 27 32 Min Typ Max Unit 31 37 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3915 3995 4120 3975 4045 4120 3975 4050 4120 mV VOL Output LOW Voltage (Note 2) 3170 3305 3445 3190 3295 3380 3190 3295 3380 mV VIH Input HIGH Voltage 3835 4120 3835 4120 3835 4120 mV VIL Input LOW Voltage 3190 3525 3190 3525 3190 3525 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V. 2. Outputs are terminated through a 50 ohm resistor to VCC−2 volts. www.onsemi.com 3 MC10EL31, MC100EL31 Table 7. 100EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 27 32 27 32 31 37 mA VOH Output HIGH Voltage (Note 2) −1085 −1005 −880 −1025 −955 −880 −1025 −955 −880 mV VOL Output LOW Voltage (Note 2) −1830 −1695 −1555 −1810 −1705 −1620 −1810 −1705 −1620 mV VIH Input HIGH Voltage −1165 −880 −1165 −880 −1165 −880 mV VIL Input LOW Voltage −1810 −1475 −1810 −1475 −1810 −1475 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V. 2. Outputs are terminated through a 50 ohm resistor to VCC−2 volts. Table 8. AC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V or VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Characteristic Symbol fmax Maximum Toggle Frequency tPLH tPHL Propagation Delay to Output CLK S, R Min Typ 2.0 2.5 315 295 465 455 25°C Max 630 630 Min Typ 2.2 2.8 375 355 475 465 85°C Max 590 590 Min Typ 2.2 2.8 430 400 530 510 Max Unit GHz 645 645 ps tS tH Setup Time Hold Time 150 250 0 100 150 250 0 100 150 250 0 100 ps tRR Set/Reset Recovery 400 200 400 200 400 200 ps tPW Minimum Pulse Width CLK, Set, Reset 400 tJITTER tr tf Cycle-to-Cycle Jitter 400 TBD Output Rise/Fall Times Q (20% − 80%) 100 225 TBD 350 100 ps 400 TBD 225 350 100 225 ps 350 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. 10 Series: VEE can vary +0.25 V / −0.5 V. 100 Series: VEE can vary +0.8 V / −0.5 V. Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 3.0 V Figure 2. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices) www.onsemi.com 4 MC10EL31, MC100EL31 Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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