MC100LVEL31DR2

3.3 V ECL D Flip‐Flop with Set and Reset MC100LVEL31 Description The MC100LVEL31 is a D flip-flop with set and reset. The device is functionally equivalent to the EL31 device but operates from a 3.3 V supply. With propagation delays and output transition times essentially equivalent to the EL31, the LVEL31 is ideally suited for those applications which require the ultimate in AC performance at low power supply voltages. Both set and reset inputs are asynchronous, level triggered signals. Data enters the master portion of the flip-flop when clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. www.onsemi.com 8 8 1 1 SOIC−8 NB D SUFFIX CASE 751−07 TSSOP−8 DT SUFFIX CASE 948R−02 Features • 475 ps Typical Propagation Delay • 2.9 GHz Toggle Frequency • ESD Protection: MARKING DIAGRAMS* > 4 kV Human Body Model ♦ > 200 V Machine Model The 100 Series Contains Temperature Compensation PECL Mode Operating Range: VCC = 3.0 V to 3.8 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −3.8 V Internal Input Pulldown Resistors Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test Moisture Sensitivity: ♦ Level 1 for SOIC−8 ♦ Level 3 for TSSOP−8 ♦ For Additional Information, see Application Note AND8003/D Flammability Rating: UL 94 V−0 @ 0.125 in, Oxygen Index: 28 to 34 Transistor Count = 121 Devices These Devices are Pb-Free, Halogen Free and are RoHS Compliant • • • • • • • • • 8 8 ♦ KVL31 ALYW G 1 1 SOIC−8 NB A L Y W M G KV31 ALYWG G TSSOP−8 = Assembly Location = Wafer Lot = Year = Work Week = Date Code = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION Package Shipping† MC100LVEL31DG Device SOIC−8 NB (Pb-Free) 98 Units / Tube MC100LVEL31DTG TSSOP−8 (Pb-Free) 100 Units / Tube MC100LVEL31DTR2G TSSOP−8 (Pb-Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 March, 2021 − Rev. 6 1 Publication Order Number: MC100LVEL31/D MC100LVEL31 S 1 D 2 S D 8 VCC 7 Q 6 Q 5 VEE Flip Flop CLK 3 R R 4 Figure 1. Logic Diagram and Pinout Assignment Table 1. PIN DESCRIPTION PIN FUNCTION CLK Q, Q D R S VCC VEE ECL Clock Input ECL Differential Data Outputs ECL Data Input ECL Reset Input ECL Set Input Positive Supply Negative Supply Table 2. TRUTH TABLE D S R CLK Q Q L H X X X L L H L H L L L H H Z Z X X X L H H L Undef H L L H Undef Z = LOW to HIGH Transition X = Don’t Care Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC PECL Mode Power Supply VEE = 0 V 8 to 0 V VEE NECL Mode Power Supply VCC = 0 V −8 to 0 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 to 0 −6 to 0 V Iout Output Current Continuous Surge 50 100 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 ±5% °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 ±5% °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C VI ≤ VCC VI ≥ VEE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MC100LVEL31 Table 4. LVPECL DC CHARACTERISTICS (VCC = 3.3 V; VEE = 0.0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 30 35 Min 85°C Typ Max 30 35 Min Typ Max Unit 32 38 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2215 2295 2420 2275 2345 2420 2275 2345 2420 mV VOL Output LOW Voltage (Note 2) 1470 1605 1745 1490 1595 1680 1490 1595 1680 mV VIH Input HIGH Voltage 2135 2420 2135 2420 2135 2420 mV VIL Input LOW Voltage 1490 1825 1490 1825 1490 1825 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary ±0.3 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. Table 5. LVNECL DC CHARACTERISTICS (VCC = 0.0 V; VEE = −3.3 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 30 35 Min 85°C Typ Max 30 35 Min Typ Max Unit 32 38 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) −1085 −1005 −880 −1025 −955 −880 −1025 −955 −880 mV VOL Output LOW Voltage (Note 2) −1830 −1695 −1555 −1810 −1705 −1620 −1810 −1705 −1620 mV VIH Input HIGH Voltage −1165 −880 −1165 −880 −1165 −880 mV VIL Input LOW Voltage −1810 −1475 −1810 −1475 −1810 −1475 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary ±0.3 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. www.onsemi.com 3 MC100LVEL31 Table 6. AC CHARACTERISTICS (VCC = 3.3 V; VEE = 0.0 V or VCC = 0.0 V; VEE = −3.3 V (Note 1)) −40°C Symbol Characteristic Min Typ fmax Maximum Toggle Frequency 2.7 tPLH tPHL Propagation Delay to Output CLK S, R 365 385 465 475 tS tH Setup Time Hold Time 150 250 tRR Set/Reset Recovery 400 tJITTER Cycle-to-Cycle Jitter tPW tr tf 25°C Max Min 340 600 Output Rise / Fall Times Q (20%−80%) 120 Typ Max 2.9 580 620 475 485 0 100 150 250 200 400 590 630 120 Max Unit GHz 630 670 ps 530 525 0 100 150 250 0 100 ps 200 400 200 ps 7.1 ps 7.0 320 Typ 415 435 340 600 220 Min 2.9 375 395 6.9 Minimum Pulse Width CLK Set, Reset 85°C ps 340 600 220 320 120 220 320 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. VEE can vary ±0.3 V. Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 3.0 V Figure 2. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices) Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP 8 CASE 948R−02 ISSUE A DATE 04/07/2000 SCALE 2:1 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF T U S V 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S 0.25 (0.010) B −U− A −V− S M M F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E DOCUMENT NUMBER: DESCRIPTION: 98AON00236D TSSOP 8 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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