MC100LVELT23
3.3V Dual Differential
LVPECL/LVDS to LVTTL
Translator
Description
The MC100LVELT23 is a dual differential LVPECL/LVDS to
LVTTL translator. Because LVPECL (Positive ECL) or LVDS levels
are used only +3.3 V and ground are required. The small outline 8-lead
package and the dual gate design of the LVELT23 makes it ideal for
applications which require the translation of a clock and a data signal.
The LVELT23 is available in only the ECL 100K standard. Since
there are no LVPECL outputs or an external VBB reference, the
LVELT23 does not require both ECL standard versions. The LVPECL
inputs are differential. Therefore, the MC100LVELT23 can accept any
standard differential LVPECL input referenced from a VCC of +3.3 V.
www.onsemi.com
8
8
1
1
1
•
•
•
•
DFN−8
MN SUFFIX
CASE 506AA
MARKING DIAGRAMS*
Features
2.0 ns Typical Propagation Delay
Maximum Frequency > 180 MHz
Differential LVPECL Inputs
PECL Mode Operating Range:VCC = 3.0 V to 3.8 V
with GND = 0 V
24 mA LVTTL Outputs
Flow Through Pinouts
Internal Pulldown and Pullup Resistors
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
8
8
KVT23
ALYW
G
1
1
SOIC−8
4J M G
G
•
•
•
•
TSSOP−8
DT SUFFIX
CASE 948R−02
SOIC−8 NB
D SUFFIX
CASE 751−07
KR23
ALYWG
G
1
TSSOP−8
A
L
Y
W
M
G
4
DFN−8
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Package
Shipping†
MC100LVELT23DG
SOIC−8 NB
(Pb-Free)
98 Units/Tube
MC100LVELT23DR2G
SOIC−8 NB
(Pb-Free)
2500/Tape & Reel
MC100LVELT23DTG
TSSOP−8
(Pb-Free)
100 Units/Tube
MC100LVELT23DTRG
TSSOP−8
(Pb-Free)
2500/Tape & Reel
MC100LVELT23MNRG
DFN−8
(Pb-Free)
1000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 19
1
Publication Order Number:
MC100LVELT23/D
MC100LVELT23
Table 1. PIN DESCRIPTION
D0
D0
1
8
2
LVPECL
VCC
7
Q0
Pin
Q0, Q1
D0*, D1*
D0*, D1*
VCC
GND
EP
LVTTL
D1
3
6
Q1
D1
4
5
GND
Function
LVTTL Outputs
Differential LVPECL Inputs
Positive Supply
Ground
(DFN8 only) Thermal exposed pad must
be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open.
** Pins will default to VCC/2 when left open.
Figure 1. 8-Lead Pinout (Top View)
and Logic Diagram
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
50 kW
Internal Input Pullup Resistor
50 kW
ESD Protection
Human Body Model
Machine Model
CDM
> 1500 V
> 100 V
> 2000 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
SOIC−8 NB
TSSOP−8
DFN−8
Pb-Free Pkg
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
91
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. Refer to Application Note AND8003/D for additional information.
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2
MC100LVELT23
Table 3. MAXIMUM RATINGS
Symbol
Rating
Unit
PECL Power Supply
GND = 0 V
3.8
V
VI
Input Voltage
GND = 0 V,
VI not more positive than VCC
3.8
V
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
SOIC−8 NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8 NB
41 to 44 ± 5%
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
TSSOP−8
185
140
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
TSSOP−8
41 to 44 ± 5%
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
DFN−8
129
84
°C/W
Tsol
Wave Solder
Pb-Free
< 2 to 3 sec @ 260°C
265
°C
qJC
Thermal Resistance (Junction-to-Case)
(Note 1)
35 to 40
°C/W
VCC
Parameter
Condition 1
Condition 2
DFN−8
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 4. LVPECL INPUT DC CHARACTERISTICS (VCC = 3.3 V; GND = 0 V (Note 1))
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
ICCH
Power Supply Current (Outputs set to HIGH)
10
20
35
10
20
35
10
20
35
mA
ICCL
Power Supply Current (Outputs set to LOW)
15
27
40
15
27
40
15
27
40
mA
VIH
Input HIGH Voltage (Note 3)
2135
2420
2135
2420
2135
2420
mV
VIL
Input LOW Voltage (Note 3)
1490
1825
1490
1825
1490
1825
mV
1.2
VCC
1.2
VCC
1.2
VCC
V
150
mA
VIHCMR
Input HIGH Voltage Common Mode Range
(Notes 2 and 3)
IIH
Input HIGH Current
IIL
Input LOW Current
150
D
−150
150
−150
−150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. All values vary 1:1 with VCC. VCC can vary ±0.3 V.
2. VIHCMR min varies 1:1 with GND, max varies 1:1 with VCC.
3. LVTTL output RL = 500 W to GND.
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3
MC100LVELT23
Table 5. LVTTL OUTPUT DC CHARACTERISTICS (VCC = 3.3 V; GND = 0 V (Note 1))
−40°C
Symbol
Characteristic
Min
VOH
Output HIGH Voltage (IOH = −3.0 mA) (Note 2)
2.4
VOL
Output LOW Voltage (IOL = 24 mA) (Note 2)
IOS
Output Short Circuit Current
25°C
Typ
Max
Min
85°C
Typ
Max
2.4
−50
Typ
Max
2.4
0.5
−180
Min
V
0.5
−180
−50
Unit
−180
0.5
V
−50
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. All values vary 1:1 with VCC. VCC can vary ±0.3 V.
2. LVTTL output RL = 500 W to GND.
Table 6. AC CHARACTERISTICS (VCC = 3.3 V; GND = 0 V (Notes 1, 2))
−40°C
Symbol
Min
Characteristic
Fmax
Maximum Toggle Frequency (Note 3)
180
tPLH,
tPHL
Propagation Delay to
Output Differential
1.0
tSK++
tSK−−
tSKPP
tJITTER
VPP
tr
tf
Typ
25°C
Max
Min
85°C
Typ
Max
180
1.5
2.5
Output-to-Output Skew++
Output-to-Output Skew−−
Part-to-Part Skew (Note 4)
15
35
70
Random Clock Jitter (RMS)
Min
Typ
Max
180
1.0
1.7
2.5
60
80
500
15
40
70
4.0
10
1.0
Unit
MHz
1.7
2.5
ns
70
80
500
30
40
140
125
80
500
ps
4.0
10
4.0
10
ps
Input Voltage Swing (Differential Configuration)
(Note 5)
200
800
1000
200
800
1000
200
800
1000
mV
Output Rise/Fall Times
(0.8 V − 2.0 V)
330
600
900
330
600
900
330
650
900
ps
Q, Q
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. All values vary 1:1 with VCC. VCC can vary ±0.3 V.
2. LVTTL output RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 2.
3. Fmax guaranteed for functionality only. VOL and VOH levels are guaranteed at DC only.
4. Skews are measured between outputs under identical conditions.
5. 200 mV input guarantees full logic swing at the output.
APPLICATION
TTL RECEIVER
CHARACTERISTIC TEST
*CL includes
fixture
capacitance
CL *
RL
AC TEST LOAD
GND
Figure 2. TTL Output Loading Used for Device Evaluation
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4
MC100LVELT23
Resource Reference of Application Notes
AN1405/D
− ECL Clock Distribution Techniques
AN1406/D
− Designing with PECL (ECL at +5.0 V)
AN1503/D
− ECLinPSt I/O SPiCE Modeling Kit
AN1504/D
− Metastability and the ECLinPS Family
AN1568/D
− Interfacing Between LVDS and ECL
AN1672/D
− The ECL Translator Guide
AND8001/D
− Odd Number Counters Design
AND8002/D
− Marking and Date Codes
AND8020/D
− Termination of ECL Logic Devices
AND8066/D
− Interfacing with ECLinPS
AND8090/D
− AC Characteristics of ECL Devices
ECLinPS is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 2x2, 0.5P
CASE 506AA
ISSUE F
DATE 04 MAY 2016
1
SCALE 4:1
D
PIN ONE
REFERENCE
2X
0.10 C
2X
0.10 C
A
B
L1
ÇÇ
ÇÇ
ÇÇ
DETAIL A
E
OPTIONAL
CONSTRUCTIONS
ÉÉ
ÇÇ
ÉÉ
ÇÇ
EXPOSED Cu
TOP VIEW
A
DETAIL B
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
ÉÉ
ÉÉ
ÇÇ
A3
MOLD CMPD
A1
DETAIL B
0.08 C
(A3)
NOTE 4
SIDE VIEW
DETAIL A
ALTERNATE
CONSTRUCTIONS
A1
C
D2
8X
4
1
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
L
5
8
e/2
e
8X
0.90
b
0.05 C
8X
0.50
2.30
1
0.10 C A B
8X
0.30
NOTE 3
BOTTOM VIEW
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
GENERIC
MARKING DIAGRAM*
1
1.30
PACKAGE
OUTLINE
E2
K
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.20
0.30
2.00 BSC
1.10
1.30
2.00 BSC
0.70
0.90
0.50 BSC
0.30 REF
0.25
0.35
−−−
0.10
XXMG
G
XX = Specific Device Code
M = Date Code
G
= Pb−Free Device
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON18658D
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFN8, 2.0X2.0, 0.5MM PITCH
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2016
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
8
1
SCALE 1:1
−X−
DATE 16 FEB 2011
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
8
8
1
1
IC
4.0
0.155
XXXXX
A
L
Y
W
G
IC
(Pb−Free)
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
XXXXXX
AYWW
1
1
Discrete
XXXXXX
AYWW
G
Discrete
(Pb−Free)
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1.270
0.050
SCALE 6:1
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
8
8
XXXXX
ALYWX
G
XXXXX
ALYWX
1.52
0.060
0.6
0.024
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
7.0
0.275
DIM
A
B
C
D
G
H
J
K
M
N
S
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−8 NB
CASE 751−07
ISSUE AK
DATE 16 FEB 2011
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
STYLE 2:
PIN 1. COLLECTOR, DIE, #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. BASE, #2
6. EMITTER, #2
7. BASE, #1
8. EMITTER, #1
STYLE 3:
PIN 1. DRAIN, DIE #1
2. DRAIN, #1
3. DRAIN, #2
4. DRAIN, #2
5. GATE, #2
6. SOURCE, #2
7. GATE, #1
8. SOURCE, #1
STYLE 4:
PIN 1. ANODE
2. ANODE
3. ANODE
4. ANODE
5. ANODE
6. ANODE
7. ANODE
8. COMMON CATHODE
STYLE 5:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. DRAIN
5. GATE
6. GATE
7. SOURCE
8. SOURCE
STYLE 6:
PIN 1. SOURCE
2. DRAIN
3. DRAIN
4. SOURCE
5. SOURCE
6. GATE
7. GATE
8. SOURCE
STYLE 7:
PIN 1. INPUT
2. EXTERNAL BYPASS
3. THIRD STAGE SOURCE
4. GROUND
5. DRAIN
6. GATE 3
7. SECOND STAGE Vd
8. FIRST STAGE Vd
STYLE 8:
PIN 1. COLLECTOR, DIE #1
2. BASE, #1
3. BASE, #2
4. COLLECTOR, #2
5. COLLECTOR, #2
6. EMITTER, #2
7. EMITTER, #1
8. COLLECTOR, #1
STYLE 9:
PIN 1. EMITTER, COMMON
2. COLLECTOR, DIE #1
3. COLLECTOR, DIE #2
4. EMITTER, COMMON
5. EMITTER, COMMON
6. BASE, DIE #2
7. BASE, DIE #1
8. EMITTER, COMMON
STYLE 10:
PIN 1. GROUND
2. BIAS 1
3. OUTPUT
4. GROUND
5. GROUND
6. BIAS 2
7. INPUT
8. GROUND
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 14:
PIN 1. N−SOURCE
2. N−GATE
3. P−SOURCE
4. P−GATE
5. P−DRAIN
6. P−DRAIN
7. N−DRAIN
8. N−DRAIN
STYLE 15:
PIN 1. ANODE 1
2. ANODE 1
3. ANODE 1
4. ANODE 1
5. CATHODE, COMMON
6. CATHODE, COMMON
7. CATHODE, COMMON
8. CATHODE, COMMON
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
STYLE 17:
PIN 1. VCC
2. V2OUT
3. V1OUT
4. TXE
5. RXE
6. VEE
7. GND
8. ACC
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
STYLE 19:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. MIRROR 2
7. DRAIN 1
8. MIRROR 1
STYLE 20:
PIN 1. SOURCE (N)
2. GATE (N)
3. SOURCE (P)
4. GATE (P)
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 21:
PIN 1. CATHODE 1
2. CATHODE 2
3. CATHODE 3
4. CATHODE 4
5. CATHODE 5
6. COMMON ANODE
7. COMMON ANODE
8. CATHODE 6
STYLE 22:
PIN 1. I/O LINE 1
2. COMMON CATHODE/VCC
3. COMMON CATHODE/VCC
4. I/O LINE 3
5. COMMON ANODE/GND
6. I/O LINE 4
7. I/O LINE 5
8. COMMON ANODE/GND
STYLE 23:
PIN 1. LINE 1 IN
2. COMMON ANODE/GND
3. COMMON ANODE/GND
4. LINE 2 IN
5. LINE 2 OUT
6. COMMON ANODE/GND
7. COMMON ANODE/GND
8. LINE 1 OUT
STYLE 24:
PIN 1. BASE
2. EMITTER
3. COLLECTOR/ANODE
4. COLLECTOR/ANODE
5. CATHODE
6. CATHODE
7. COLLECTOR/ANODE
8. COLLECTOR/ANODE
STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT
STYLE 26:
PIN 1. GND
2. dv/dt
3. ENABLE
4. ILIMIT
5. SOURCE
6. SOURCE
7. SOURCE
8. VCC
STYLE 29:
PIN 1. BASE, DIE #1
2. EMITTER, #1
3. BASE, #2
4. EMITTER, #2
5. COLLECTOR, #2
6. COLLECTOR, #2
7. COLLECTOR, #1
8. COLLECTOR, #1
STYLE 30:
PIN 1. DRAIN 1
2. DRAIN 1
3. GATE 2
4. SOURCE 2
5. SOURCE 1/DRAIN 2
6. SOURCE 1/DRAIN 2
7. SOURCE 1/DRAIN 2
8. GATE 1
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
STYLE 27:
PIN 1. ILIMIT
2. OVLO
3. UVLO
4. INPUT+
5. SOURCE
6. SOURCE
7. SOURCE
8. DRAIN
STYLE 28:
PIN 1. SW_TO_GND
2. DASIC_OFF
3. DASIC_SW_DET
4. GND
5. V_MON
6. VBULK
7. VBULK
8. VIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP 8
CASE 948R−02
ISSUE A
DATE 04/07/2000
SCALE 2:1
8x
0.15 (0.006) T U
0.10 (0.004)
S
2X
L/2
L
8
5
1
PIN 1
IDENT
0.15 (0.006) T U
K REF
T U
S
V
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
S
0.25 (0.010)
B
−U−
A
−V−
S
M
M
F
DETAIL E
C
0.10 (0.004)
−T− SEATING
PLANE
D
−W−
G
DETAIL E
DOCUMENT NUMBER:
DESCRIPTION:
98AON00236D
TSSOP 8
DIM
A
B
C
D
F
G
K
L
M
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
0.80
1.10
0.05
0.15
0.40
0.70
0.65 BSC
0.25
0.40
4.90 BSC
0_
6_
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
0.031
0.043
0.002
0.006
0.016
0.028
0.026 BSC
0.010
0.016
0.193 BSC
0_
6_
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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