MC10EL16DTR2G

5.0 V ECL Differential Receiver MC10EL16, MC100EL16 Description The MC10EL/100EL16 is a differential receiver. The device is functionally equivalent to the E116 device with higher performance capabilities. With output transition times significantly faster than the E116, the EL16 is ideally suited for interfacing with high frequency sources. The VBB pin, an internally generated voltage supply, is available to this device only. For single-ended input conditions, the unused differential input is connected to VBB as a switching reference voltage. VBB may also rebias AC coupled inputs. When used, decouple VBB and VCC via a 0.01 mF capacitor and limit current sourcing or sinking to 0.5 mA. When not used, VBB should be left open. Under open input conditions (pulled to VEE) internal input clamps will force the Q output LOW. The 100 Series contains temperature compensation. www.onsemi.com 190 ps Propagation Delay PECL Mode Operating Range: VCC = 4.2 V to 5.7 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −4.2 V to −5.7 V Internal Input Pulldown Resistors These Devices are Pb-Free, Halogen Free and are RoHS Compliant NC 1 8 VCC D 2 7 Q 1 1 SOIC−8 NB D SUFFIX CASE 751−07 TSSOP−8 DT SUFFIX CASE 948R−02 MARKING DIAGRAMS* 8 8 8 KEL16 ALYW G HEL16 ALYW G Features • • • • • 8 8 1 1 1 TSSOP−8 SOIC−8 NB H K A L Y W G KL16 ALYWG G = MC10 = MC100 = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. D 3 6 Q ORDERING INFORMATION Device VBB 4 5 MC10EL16DG VEE MC10EL16DR2G Figure 1. Logic Diagram and Pinout Assignment MC100EL16DG SOIC−8 NB 98 Units / Tube (Pb-Free) 2500 / MC100EL16DR2G SOIC−8 NB Tape & Reel (Pb-Free) 2500 / MC100EL16DTR2G TSSOP−8 Tape & Reel (Pb-Free) Table 1. PIN DESCRIPTION PIN FUNCTION D, D Q, Q VBB VCC VEE NC ECL Data Inputs ECL Data Outputs Reference Voltage Output Positive Supply Negative Supply No Connect © Semiconductor Components Industries, LLC, 2016 April, 2021 − Rev. 10 Shipping† SOIC−8 NB 98 Units / Tube (Pb-Free) 2500 / SOIC−8 NB (Pb-Free) Tape & Reel Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: MC10EL16/D MC10EL16, MC100EL16 Table 2. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 KW Internal Input Pullup Resistor N/A ESD Protection Human Body Model Machine Model Charge Device Model > 500 V > 100 V > 2 KV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 NB TSSOP−8 Pb-Free Pkg Level 1 Level 3 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 47 Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. Table 3. MAXIMUM RATINGS Symbol Rating Units VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 8 V VEE NECL Mode Power Supply VCC = 0 V −8 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA IBB VBB Sink/Source ±0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500lfpm TSSOP−8 TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 ±5% °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C VI ≤ VCC VI ≥ VEE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MC10EL16, MC100EL16 Table 4. 10EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 18 22 18 22 18 22 mA VOH Output HIGH Voltage (Note 2) 3920 4010 4110 4020 4105 4190 4090 4185 4280 mV VOL Output LOW Voltage (Note 2) 3050 3200 3350 3050 3210 3370 3050 3227 3405 mV VIH Input HIGH Voltage (Single-Ended) 3770 4110 3870 4190 3940 4280 mV VIL Input LOW Voltage (Single-Ended) 3050 3500 3050 3520 3050 3555 mV VBB Output Voltage Reference 3.57 3.7 3.65 3.75 3.69 3.81 V Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) 2.5 4.6 2.5 4.6 2.5 4.6 V 150 mA VIHCMR IIH Input HIGH Current IIL Input LOW Current 150 150 0.5 0.5 0.3 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. Table 5. 10EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Typ Max 18 22 −1080 −990 −890 Output LOW Voltage (Note 2) −1950 −1800 −1650 VIH Input HIGH Voltage (Single-Ended) −1230 −890 VIL Input LOW Voltage (Single-Ended) −1950 −1500 VBB Output Voltage Reference −1.43 −1.30 Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) −2.5 −0.4 IEE Power Supply Current VOH Output HIGH Voltage (Note 2) VOL VIHCMR IIH Input HIGH Current IIL Input LOW Current Min 25°C Min 85°C Typ Max 18 22 −980 −895 −810 −1950 −1790 Typ Max Unit 18 22 mA −910 −815 −720 mV −1630 −1950 −1773 −1595 mV −1130 −810 −1060 −720 mV −1950 −1480 −1950 −1445 mV −1.35 −1.25 −1.31 −1.19 V −2.5 −0.4 −2.5 −0.4 V 150 mA 150 0.5 Min 150 0.5 0.3 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. www.onsemi.com 3 MC10EL16, MC100EL16 Table 6. 100EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 18 22 Min 85°C Typ Max 18 22 Min Typ Max Unit 21 26 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3915 3995 4120 3975 4045 4120 3975 4050 4120 mV VOL Output LOW Voltage (Note 2) 3170 3305 3445 3190 3295 3380 3190 3295 3380 mV VIH Input HIGH Voltage (Single-Ended) 3835 4120 3835 4120 3835 4120 mV VIL Input LOW Voltage (Single-Ended) 3190 3525 3190 3525 3190 3525 mV VBB Output Voltage Reference 3.62 3.74 3.62 3.74 3.62 3.74 V Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) 2.5 4.6 2.5 4.6 2.5 4.6 V 150 mA VIHCMR IIH Input HIGH Current IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. Table 7. 100EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1)) −40°C Symbol Characteristic Min 25°C Typ Max 18 22 Min 85°C Typ Max 18 22 Min Typ Max Unit 21 26 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) −1085 −1005 −880 −1025 −955 −880 −1025 −955 −880 mV VOL Output LOW Voltage (Note 2) −1830 −1695 −1555 −1810 −1705 −1620 −1810 −1705 −1620 mV VIH Input HIGH Voltage (Single-Ended) −1165 −880 −1165 −880 −1165 −880 mV VIL Input LOW Voltage (Single-Ended) −1810 −1475 −1810 −1475 −1810 −1475 mV VBB Output Voltage Reference −1.38 −1.26 −1.38 −1.26 −1.38 −1.26 V Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) −2.5 −0.4 −2.5 −0.4 −2.5 −0.4 V 150 mA VIHCMR IIH Input HIGH Current IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V. 2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V. www.onsemi.com 4 MC10EL16, MC100EL16 Table 8. AC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V or VCC = 0 V; V EE= −5.0 V (Note 1)) −40°C Symbol Characteristic Min fmax Maximum Toggle Frequency tPLH tPHL Propagation Delay to Output (Diff) (SE) tSKEW Duty Cycle Skew (Diff) (Note 2) tJITTER Random Clock Jitter (RMS) VPP tr tf 25°C Typ Max Min 85°C Typ Max Min Typ Max 1.75 125 75 250 250 375 425 5 20 175 125 250 250 325 375 5 20 205 155 280 280 355 405 5 20 0.7 Input Swing (Note 3) 150 Output Rise/Fall Times Q (20%−80%) 100 1000 150 350 100 190 Unit GHz ps ps ps 190 1000 150 350 100 190 1000 mV 350 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. 10 Series: VEE can vary +0.25 V / −0.5 V. 100 Series: VEE can vary +0.8 V / −0.5 V. 2. Duty cycle skew is the difference between a tPLH and tPHL propagation delay through a device. 3. VPP(min) is minimum input swing for which AC parameters guaranteed. The device has a DC gain of ≈ 40. Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 2. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices) Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPS I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP 8 CASE 948R−02 ISSUE A DATE 04/07/2000 SCALE 2:1 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF T U S V 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S 0.25 (0.010) B −U− A −V− S M M F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E DOCUMENT NUMBER: DESCRIPTION: 98AON00236D TSSOP 8 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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