MC14040BCPG

DATA SHEET www.onsemi.com 12-Bit Binary Counter MC14040B The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going edge of the clock pulse. Applications include time delay circuits, counter controls, and frequency−driving circuits. SOIC−16 D SUFFIX CASE 751B PIN ASSIGNMENT Features • • • • • • • • Fully Static Operation Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Capable of Driving Two Low−power TTL Loads or One Low−power Schottky TTL Load Over the Rated Temperature Range Common Reset Line Pin−for−Pin Replacement for CD4040B NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant VDD Vin, Vout Iin, Iout Parameter DC Supply Voltage Range Input or Output Voltage Range (DC or Transient) Q12 1 16 VDD Q6 2 15 Q11 Q5 3 14 Q10 Q7 4 13 Q8 Q4 5 12 Q9 Q3 6 11 R Q2 7 10 C VSS 8 9 Q1 MARKING DIAGRAMS MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol TSSOP−16 DT SUFFIX CASE 948F 16 16 Value Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V 14040BG AWLYWW 1 1 SOIC−16 Input or Output Current (DC or Transient) per Pin ±10 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C A WL, L YY, Y WW, W G or G 14 040B ALYW G G TSSOP−16 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 March, 2022 − Rev. 12 1 Publication Order Number: MC14040B/D MC14040B TRUTH TABLE Clock Reset Output State X 0 0 1 No Change Advance to next state All Outputs are low X = Don’t Care LOGIC DIAGRAM Q1 Q2 9 CLOCK C 10 C R Q3 6 7 Q C Q C R Q C Q C R Q10 14 Q C Q C R Q11 15 Q C Q C R Q12 1 Q C Q C Q R RESET 11 Q4 = PIN 5 Q5 = PIN 3 Q6 = PIN 2 Q7 = PIN 4 Q8 = PIN 13 Q9 = PIN 12 VDD = PIN 16 VSS = PIN 8 ORDERING INFORMATION Package Shipping† MC14040BDG SOIC−16 (Pb−Free) 48 Units / Rail MC14040BDR2G SOIC−16 (Pb−Free) 2500 Units / Tape & Reel NLV14040BDR2G* SOIC−16 (Pb−Free) 2500 Units / Tape & Reel MC14040BDTR2G TSSOP−16 (Pb−Free) 2500 Units / Tape & Reel NLV14040BDTR2G* TSSOP−16 (Pb−Free) 2500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 2 MC14040B ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) −55_C Characteristic Output Voltage Vin = VDD or 0 Symbol 25_C VDD Vdc Min Max Min Typ (Note 2) 125_C Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 –3.0 –0.64 –1.6 –4.2 − − − − –2.4 –0.51 –1.3 –3.4 –4.2 –0.88 –2.25 –8.8 − − − − –1.7 –0.36 –0.9 –2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 5.0 10 20 − − − 0.005 0.010 0.015 5.0 10 20 − − − 150 300 600 mAdc IT 5.0 10 15 Vin = 0 or VDD Input Voltage (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) “1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Source Sink Total Supply Current (Notes 3 & 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) VIH IOH Vdc Vdc mAdc IT = (0.42 mA/kHz) f + IDD IT = (0.85 mA/kHz) f + IDD IT = (1.43 mA/kHz) f + IDD mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001. www.onsemi.com 3 MC14040B SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) Symbol Characteristic Output Rise and Fall Time TTLH, TTHL = (1.5 ns/pF) CL + 25 ns TTLH, TTHL = (0.75 ns/pF) CL + 12.5 ns TTLH, TTHL = (0.55 ns/pF) CL + 9.5 ns tTLH, tTHL Propagation Delay Time Clock to Q1 tPHL, tPLH = (1.7 ns/pF) CL + 315 ns tPHL, tPLH = (0.66 ns/pF) CL + 137 ns tPHL, tPLH = (0.5 ns/pF) CL + 95 ns tPLH, tPHL VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 260 115 80 520 230 160 5.0 10 15 − − − 1625 720 500 3250 1440 1000 Unit ns ns ns Clock to Q12 tPHL, tPLH = (1.7 ns/pF) CL + 2415 ns tPHL, tPLH = (0.66 ns/pF) CL + 867 ns tPHL, tPLH = (0.5 ns/pF) CL + 475 ns Propagation Delay Time Reset to Qn tPHL = (1.7 ns/pF) CL + 485 ns tPHL = (0.86 ns/pF) CL + 182 ns tPHL = (0.5 ns/pF) CL + 145 ns tPHL Clock Pulse Width ns 5.0 10 15 − − − 370 155 115 740 310 230 tWH 5.0 10 15 385 150 115 140 55 38 − − − ns fcl 5.0 10 15 − − − 2.1 7.0 10.0 1.5 3.5 4.5 MHz tTLH, tTHL 5.0 10 15 Reset Pulse Width tWH 5.0 10 15 960 360 270 320 120 80 − − − ns Reset Removal Time trem 5.0 10 15 130 50 30 65 25 15 − − − ns Clock Pulse Frequency Clock Rise and Fall Time ns No Limit 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. VDD VDD 500 mF 0.01 mF CERAMIC ID PULSE GENERATOR C Q1 Q2 Q R n C Q1 Q2 Q R n CL CL VSS CL CL CL VSS 20 ns CLOCK PULSE GENERATOR 90% 50% 10% CL CLOCK 20 ns 20 ns 20 ns tPLH VDD 90% 50% 10% tWH tPHL 50% DUTY CYCLE 90% 50% 10% tTLH Figure 1. Power Dissipation Test Circuit and Waveform Figure 2. Switching Time Test Circuit and Waveforms Q VSS www.onsemi.com 4 tTHL MC14040B 1 2 4 8 16 32 64 128 256 512 1024 2048 4096 CLOCK RESET Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 Q10 Q11 Q12 Figure 3. Timing Diagram APPLICATIONS INFORMATION TIME−BASE GENERATOR outputs Q5, Q10, Q11, and Q12 division by 3600 is accomplished. The MC14012B decodes the counter outputs, produces a single output pulse, and resets the binary counter. The resulting output frequency is 1.0 pulse/minute. A 60 Hz sinewave obtained through a 1.0 Megohm resistor connected directly to a standard 120 Vac power line is applied to the clock input of the MC14040B. By selecting VCC VCC 1/6 of HC14A 1.0M MC14040B Clock 12 ≥20pF 120Vac 60Hz 13 Q5 Q10 10 Q11 9 NOTE: Q12 Ground MUST be isolated by a transformer or opto−isolator for safety reasons. Figure 4. Time−Base Generator www.onsemi.com 5 1/2 14012B 8 1 2 4 5 1/2 14012B 6 1.0 Pulse/Minute Output MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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