MC74HCT374ADW

MC74HCT374A Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT374A may be used as a level converter for interfacing TTL or NMOS outputs to High−Speed CMOS inputs. The HCT374A is identical in pinout to the LS374. Data meeting the setup and hold time is clocked to the outputs with the rising edge of Clock. The Output Enable does not affect the state of the flip−flops, but when Output Enable is high, the outputs are forced to the high−impedance state. Thus, data may be stored even when the outputs are not enabled. The HCT374A is identical in function to the HCT574A, which has the input pins on the opposite side of the package from the output pins. This device is similar in function to the HCT534A, which has inverting outputs. Features • • • • • • • • • Output Drive Capability: 15 LSTTL Loads TTL/NMOS−Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 mA In Compliance With the JEDEC Standard No. 7.0 A Requirements Chip Complexity: 276 FETs or 69 Equivalent Gates Improvements over HCT374 ♦ Improved Propagation Delays ♦ 50% Lower Quiescent Power ♦ Improved Input Noise and Latchup Immunity These Devices are Pb−Free and are RoHS Compliant LOGIC DIAGRAM D0 D1 D2 DATA INPUTS D3 D4 D5 D6 D7 CLOCK OUTPUT ENABLE 3 2 4 5 7 6 8 9 13 12 14 15 17 16 18 19 © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 12 PIN ASSIGNMENT OUTPUT ENABLE Q0 D0 D1 Q1 Q2 D2 D3 Q3 GND VCC Q7 D7 D6 Q6 Q5 D5 D4 Q4 CLOCK MARKING DIAGRAMS 20 HCT 374A ALYWG G HCT374A AWLYYWWG 1 1 TSSOP−20 SOIC−20 A WL, L YY, Y WW, W G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package FUNCTION TABLE Q2 Q4 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 20 Q1 Q3 TSSOP−20 DT SUFFIX CASE 948E (Note: Microdot may be in either location) Q0 Inputs NONINVERTING OUTPUTS Output Enable L L L H Q5 Q6 Q7 Output Clock D Q L,H, X H L X X H L No Change Z X = don’t care Z = high impedance 11 1 SOIC−20 DW SUFFIX CASE 751D PIN 20 = VCC PIN 10 = GND ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. 1 Publication Order Number: MC74HCT374A/D MC74HCT374A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Design Criteria Value Units Internal Gate Count* 69 ea. Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 mW .0075 pJ Speed Power Product *Equivalent to a two−input NAND gate. MAXIMUM RATINGS Symbol Parameter Value Unit –0.5 to +7.0 V DC Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V DC Output Voltage (Referenced to GND) VCC DC Supply Voltage (Referenced to GND) Vin Vout –0.5 to VCC + 0.5 V Iin DC Input Current, per Pin ±20 mA Iout DC Output Current, per Pin ±35 mA ICC DC Supply Current, VCC and GND Pins ±75 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature –65 to +150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) SOIC Package† TSSOP Package† _C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating: SOIC Package: –7 mW/_C from 65_ to 125_C TSSOP Package: −6.1 mW/_C from 65_ to 125_C RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) Max Unit 4.5 5.5 V 0 VCC V –55 +125 _C 0 500 ns Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. http://onsemi.com 2 MC74HCT374A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V −55 to 25_C ≤ 85_C ≤ 125_C Unit VIH Minimum High−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| ≤ 20 mA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| ≤ 20 mA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V VOH Minimum High−Level Output Voltage Vin = VIH or VIL |Iout| ≤ 20 mA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V Vin = VIH or VIL |Iout| ≤ 6.0 mA 4.5 3.98 3.84 3.7 Vin = VIH or VIL |Iout| ≤ 20 mA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 Vin = VIH or VIL |Iout| ≤ 6.0 mA 4.5 0.26 0.33 0.4 VOL Maximum Low−Level Output Voltage V Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 mA IOZ Maximum Three−State Leakage Current Output in High−Impedance State Vin = VIL or VIH Vout = VCC or GND 5.5 ±0.5 ±5.0 ±10 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 mA 5.5 4.0 40 160 mA DICC Additional Quiescent Supply Current Vin = 2.4 V, Any One Input Vin = VCC or GND, Other Inputs lout = 0 mA ≥ −55_C 25_C to 125_C 2.9 2.4 mA 5.5 1. Total Supply Current = ICC + ΣDICC. AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ±10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter −55 to 25_C ≤ 85_C ≤ 125_C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 30 24 20 MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q (Figures 1 and 4) 31 39 47 ns tPLZ, tPHZ Maximum Propagation Delay, Output Enable to Q (Figures 2 and 5) 30 38 45 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to Q (Figures 2 and 5) 30 38 45 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 12 15 18 ns Cin Maximum Input Capacitance 10 10 10 pF Cout Maximum Three−State Output Capacitance (Output in High−Impedance State) 15 15 15 pF CPD Power Dissipation Capacitance (Per Flip−Flop)* Typical @ 25°C, VCC = 5.0 V 65 * Used to determine the no−load dynamic power consumption: P D = CPD VCC http://onsemi.com 3 2f + ICC VCC . pF MC74HCT374A TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, Input tr = tf = 6.0 ns) Guaranteed Limit −55 to 25_C ≤ 85_C ≤ 125_C Unit tsu Minimum Setup Time, Data to Clock (Figure 3) 12 15 18 ns th Minimum Hold Time, Clock to Data (Figure 3) 5.0 5.0 5.0 ns tw Minimum Pulse Width, Clock (Figure 1) 12 15 18 ns Maximum Input Rise and Fall Times (Figure 1) 500 500 500 ns Symbol tr, tf Parameter SWITCHING WAVEFORMS tr CLOCK tf 3V OUTPUT ENABLE VCC 2.7 V 1.3 V 0.3 V tw GND GND Q 1/fmax tPZL tPLZ tPZH tPHZ 90% 1.3 V 10% Q HIGH IMPEDANCE 1.3 V tPHL tPLH Q 1.3 V 10% VOL 90% VOH 1.3 V HIGH IMPEDANCE tTHL tTLH Figure 1. Figure 2. VALID DATA 3V 1.3 V GND tsu th 3V CLOCK 1.3 V GND Figure 3. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance 1 kW CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL CONNECT TO GND WHEN TESTING tPHZ AND tPZH *Includes all probe and jig capacitance Figure 4. Figure 5. http://onsemi.com 4 MC74HCT374A EXPANDED LOGIC DIAGRAM D0 3 D1 4 D D Q C CLOCK D2 7 Q D3 8 D C Q D4 13 D C Q D5 14 D C Q D6 17 D C Q D7 18 D C Q D C Q C 11 OUTPUT 1 ENABLE 2 Q0 5 Q1 6 Q2 9 Q3 12 Q4 15 Q5 16 Q6 19 Q7 ORDERING INFORMATION Package Shipping† MC74HCT374ADWG SOIC−20 (Pb−Free) 38 Units / Rail MC74HCT374ADWR2G SOIC−20 (Pb−Free) 1000 Units / Reel MC74HCT374ADTR2G TSSOP−20 (Pb−Free) 2500 Units / Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−20 WB CASE 751D−05 ISSUE H DATE 22 APR 2015 SCALE 1:1 A 20 q X 45 _ M E h 0.25 H NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 1 10 20X B b 0.25 M T A S B DIM A A1 b c D E e H h L q S L A 18X e SEATING PLANE A1 c T GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 20 20X 20X 1.30 0.52 20 XXXXXXXXXXX XXXXXXXXXXX AWLYYWWG 11 1 11.00 1 XXXXX A WL YY WW G 10 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ 98ASB42343B SOIC−20 WB = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−20 WB CASE 948E ISSUE D DATE 17 FEB 2016 SCALE 2:1 20X 0.15 (0.006) T U 2X L K REF 0.10 (0.004) S L/2 20 M T U S V ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ K K1 S J J1 11 B SECTION N−N −U− PIN 1 IDENT 0.25 (0.010) N 1 10 M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C G D H DETAIL E 0.100 (0.004) −T− SEATING PLANE DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 XXXX XXXX ALYWG G 1 0.65 PITCH 16X 0.36 16X 1.26 DOCUMENT NUMBER: 98ASH70169A DESCRIPTION: TSSOP−20 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DIMENSIONS: MILLIMETERS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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