MC74HCT74AD

MC74HCT74A Dual D Flip-Flop with Set and Reset with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HCT74A is identical in pinout to the LS74. This device may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. This device consists of two D flip−flops with individual Set, Reset, and Clock inputs. Information at a D−input is transferred to the corresponding Q output on the next positive going edge of the clock input. Both Q and Q outputs are available from each flip−flop. The Set and Reset inputs are asynchronous. Features • • • • • • • • Output Drive Capability: 10 LSTTL Loads TTL NMOS Compatible Input Levels Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 4.5 to 5.5 V Low Input Current: 1.0 mA In Compliance With the JEDEC Standard No. 7.0 A Requirements Chip Complexity: 136 FETs or 34 Equivalent Gates These Devices are Pb−Free, Halogen Free and are RoHS Compliant SOIC−14 NB D SUFFIX CASE 751A PIN ASSIGNMENT RESET 1 1 14 VCC DATA 1 2 13 RESET 2 CLOCK 1 3 12 DATA 2 SET 1 4 11 CLOCK 2 Q1 5 10 SET 2 Q1 6 9 Q2 GND 7 8 Q2 MARKING DIAGRAM 14 LOGIC DIAGRAM RESET 1 HCT74AG AWLYWW 1 1 DATA 1 CLOCK 1 SET 1 RESET 2 DATA 2 CLOCK 2 SET 2 2 5 3 6 Q1 A WL Y, YY WW G Q1 4 13 PIN 14 = VCC PIN 7 = GND 12 9 11 8 FUNCTION TABLE Inputs Q2 Value Units Internal Gate Count† 34 ea. Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 mW .0075 pJ Speed Power Product Outputs Set Reset Clock Data Q2 L H L H H H H H 10 Design Criteria = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package H L L H H H H H X X X L H X X X H L X X X Q Q H L L H H* H* H L L H No Change No Change No Change *Both outputs will remain high as long as Set and Reset are low, but the output states are unpredictable if Set and Reset go high simultaneously. †Equivalent to a two−input NAND gate. ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 12 1 Publication Order Number: MC74HCT74A/D MC74HCT74A MAXIMUM RATINGS Symbol Parameter Value Unit –0.5 to +7.0 V DC Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V DC Output Voltage (Referenced to GND) –0.5 to VCC + 0.5 V VCC DC Supply Voltage (Referenced to GND) Vin Vout Iin DC Input Current, per Pin ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air 500 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 _C SOIC Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND ≤ (Vin or Vout) ≤ VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating: SOIC Package: –7 mW/_C from 65_ to 125_C RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) Max Unit 4.5 5.5 V 0 VCC V –55 +125 _C 0 500 ns Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V –55 to 25_C ≤ 85_C ≤ 125_C Unit VIH Minimum High−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| ≤ 20 mA 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| ≤ 20 mA 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V VOH Minimum High−Level Output Voltage Vin = VIH or VIL |Iout| ≤ 20 mA 4.5 5.5 4.4 5.4 4.4 5.4 4.4 5.4 V Vin = VIH or VIL |Iout| ≤ 4.0 mA 4.5 3.98 3.84 3.7 Vin = VIH or VIL |Iout| ≤ 20 mA 4.5 5.5 0.1 0.1 0.1 0.1 0.1 0.1 Vin = VIH or VIL |Iout| ≤ 4.0 mA VOL Maximum Low−Level Output Voltage V 4.5 0.26 0.33 0.4 Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ± 0.1 ± 1.0 ± 1.0 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 mA 5.5 2.0 20 80 mA DICC Additional Quiescent Supply Current Vin = 2.4 V, Any One Input Vin = VCC or GND, Other Inputs lout = 0 mA http://onsemi.com 2 5.5 ≥ −55_C 25_C to 125_C 2.9 2.4 mA MC74HCT74A AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter –55 to 25_C ≤ 85_C ≤ 125_C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 30 24 20 MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q or Q (Figures 1 and 4) 24 30 36 ns tPLH, tPHL Maximum Propagation Delay, Set or Reset to Q or Q (Figures 2 and 4) 24 30 36 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 15 19 22 ns Maximum Input Capacitance 10 10 10 pF Cin Typical @ 25°C, VCC = 5.0 V CPD 32 Power Dissipation Capacitance (Per Enabled Output)* pF 1. Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TIMING REQUIREMENTS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit –55 to 25_C Symbol Parameter Fig. Min Max ≤ 85_C Min ≤ 125_C Max Min Max Units tsu Minimum Setup Time, Data to Clock 3 15 19 22 ns th Minimum Hold Time, Clock to Data 3 3 3 3 ns trec Minimum Recovery Time, Set or Reset Inactive to Clock 2 6 8 9 ns tw Minimum Pulse Width, Clock 1 15 19 22 ns tw Minimum Pulse Width, Set or Reset 2 15 19 22 ns tr, tf Maximum Input Rise and Fall Times 1 500 500 500 ns ORDERING INFORMATION Package Shipping† MC74HCT74ADG SOIC−14 NB (Pb−Free) 55 Units / Rail MC74HCT74ADR2G SOIC−14 NB (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MC74HCT74A SWITCHING WAVEFORMS tw tr CLOCK 3V tf SET OR RESET 3V 2.7 V 1.3 V 0.3 V 1.3 V GND tPHL GND Q OR Q tw 1.3 V 1/fmax tPLH Q OR Q tPLH tPHL 1.3 V Q OR Q 90% 1.3 V 10% trec 3V 1.3 V CLOCK tTLH tTHL GND Figure 1. Figure 2. VALID TEST POINT 3V DATA 1.3 V OUTPUT GND tsu DEVICE UNDER TEST th 3V 1.3 V CL* GND CLOCK *Includes all probe and jig capacitance Figure 3. SET Figure 5. 4, 10 2, 12 5, 9 Q DATA 3, 11 CLOCK 6, 8 Q 1, 13 RESET Figure 4. Expanded Logic Diagram http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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