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MC74LVXT4066MEL

MC74LVXT4066MEL

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOIC14

  • 描述:

    IC MUX/DEMUX QUAD 1X1 14SOEIAJ

  • 数据手册
  • 价格&库存
MC74LVXT4066MEL 数据手册
MC74LVXT4066 Quad Analog Switch/ Multiplexer/Demultiplexer High−Performance Silicon−Gate CMOS The MC74LVXT4066 utilizes silicon−gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF−channel leakage current. This bilateral switch/multiplexer/ demultiplexer controls analog and digital voltages that may vary across the full power−supply range (from VCC to GND). The LVXT4066 is identical in pinout to the metal−gate CMOS MC14066 and the high−speed CMOS HC4066A. Each device has four independent switches. The device has been designed so that the ON resistances (RON) are much more linear over input voltage than RON of metal−gate CMOS analog switches. The ON/OFF control inputs are compatible with standard LSTTL outputs. The input protection circuitry on this device allows overvoltage tolerance on the ON/OFF control inputs, allowing the device to be used as a logic−level translator from 3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the higher−voltage power supply. The MC74LVXT4066 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74LVXT4066 to be used to interface 5.0 V circuits to 3.0 V circuits. www.onsemi.com SOIC−14 NB D SUFFIX CASE 751A PIN ASSIGNMENT XA 1 14 YA 2 13 3 12 4 11 VCC A ON/OFF CONTROL D ON/OFF CONTROL XD 5 10 YD 6 9 YC 7 8 XC YB XB B ON/OFF CONTROL C ON/OFF CONTROL GND (Top View) Features • • • • • • • • • TSSOP−14 DT SUFFIX CASE 948G Fast Switching and Propagation Speeds High ON/OFF Output Voltage Ratio Low Crosstalk Between Switches Diode Protection on All Inputs/Outputs Wide Power−Supply Voltage Range (VCC − GND) = 2.0 to 6.0 V Analog Input Voltage Range (VCC − GND) = 2.0 to 6.0 V Improved Linearity and Lower ON Resistance over Input Voltage than the MC14016 or MC14066 Low Noise These Devices are Pb−Free and are RoHS Compliant MARKING DIAGRAMS 14 LVXT4066G AWLYWW 1 SOIC−14 NB 14 LVXT 4066 ALYWG G 1 TSSOP−14 LVXT4066 A WL, L Y WW, W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2017 − Rev. 5 1 Publication Order Number: MC74LVXT4066/D MC74LVXT4066 LOGIC DIAGRAM XA A ON/OFF CONTROL XB B ON/OFF CONTROL XC C ON/OFF CONTROL XD D ON/OFF CONTROL 1 2 FUNCTION TABLE YA On/Off Control Input State of Analog Switch L H Off On 13 4 3 YB 5 ANALOG OUTPUTS/INPUTS 8 9 YC 6 11 10 YD 12 ANALOG INPUTS/OUTPUTS = XA, XB, XC, XD PIN 14 = VCC PIN 7 = GND MAXIMUM RATINGS Symbol Parameter Value Unit –0.5 to +7.0 V VCC Positive DC Supply Voltage (Referenced to GND) VIS Analog Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V Vin Digital Input Voltage (Referenced to GND) –0.5 to VCC + 0.5 V −20 mA 500 450 mW –65 to +150 _C 260 _C I DC Current Into or Out of Any Pin PD Power Dissipation in Still Air, Tstg Storage Temperature SOIC Package† TSSOP Package† TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. †Derating: SOIC Package: –7 mW/_C from 65_ to 125_C TSSOP Package: −6.1 mW/_C from 65_ to 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. I/O pins must be connected to a properly terminated line or bus. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage (Referenced to GND) 2.0 5.5 V VIS Analog Input Voltage (Referenced to GND) GND VCC V Vin Digital Input Voltage (Referenced to GND) GND VCC V VIO* Static or Dynamic Voltage Across Switch − 1.2 V –55 +85 _C 0 0 100 20 ns/V TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time, ON/OFF Control Inputs (Figure 10) VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. *For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may be drawn; i.e., the current out of the switch may contain both VCC and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. www.onsemi.com 2 MC74LVXT4066 DC ELECTRICAL CHARACTERISTIC − Digital Section (Voltages Referenced to GND) Symbol Parameter Test Conditions Guaranteed Limit VCC V –55 to 25_C v 85_C v 125_C Unit VIH Minimum High−Level Voltage ON/OFF Control Inputs (Note 1) Ron = Per Spec 3.0 4.5 5.5 1.2 2.0 2.0 1.2 2.0 2.0 1.2 2.0 2.0 V VIL Maximum Low−Level Voltage ON/OFF Control Inputs (Note 1) Ron = Per Spec 3.0 4.5 5.5 0.53 0.8 0.8 0.53 0.8 0.8 0.53 0.8 0.8 V Iin Maximum Input Leakage Current ON/OFF Control Inputs Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND VIO = 0 V 5.5 4.0 40 160 mA 1. Specifications are for design target only. Not final specification limits. DC ELECTRICAL CHARACTERISTICS − Analog Section (Voltages Referenced to GND) Guaranteed Limit Symbol Ron Parameter Maximum “ON” Resistance VCC V –55 to 25_C v 85_C v 125_C Unit Vin = VIH VIS = VCC to GND IS v 2.0 mA (Figures 1, 2) 2.0† 3.0 4.5 5.5 − 40 25 20 − 45 28 25 − 50 35 30 W Vin = VIH VIS = VCC or GND (Endpoints) IS v 2.0 mA (Figures 1, 2) 2.0 3.0 4.5 5.5 − 30 25 20 − 35 28 25 − 40 35 30 Test Conditions DRon Maximum Difference in “ON” Resistance Between Any Two Channels in the Same Package Vin = VIH VIS = 1/2 (VCC − GND) IS v 2.0 mA 3.0 4.5 5.5 15 10 10 20 12 12 25 15 15 W Ioff Maximum Off−Channel Leakage Current, Any One Channel Vin = VIL VIO = VCC or GND Switch Off (Figure 3) 5.5 0.1 0.5 1.0 mA Ion Maximum On−Channel Leakage Current, Any One Channel Vin = VIH VIS = VCC or GND (Figure 4) 5.5 0.1 0.5 1.0 mA †At supply voltage (VCC) approaching 2 V the analog switch−on resistance becomes extremely non−linear. Therefore, for low−voltage operation, it is recommended that these devices only be used to control digital signals. www.onsemi.com 3 MC74LVXT4066 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, ON/OFF Control Inputs: tr = tf = 6 ns) Parameter Symbol Guaranteed Limit VCC V –55 to 25_C v 85_C v 125_C Unit tPLH, tPHL Maximum Propagation Delay, Analog Input to Analog Output (Figures 8 and 9) 2.0 3.0 4.5 5.5 4.0 3.0 1.0 1.0 6.0 5.0 2.0 2.0 8.0 6.0 2.0 2.0 ns tPLZ, tPHZ Maximum Propagation Delay, ON/OFF Control to Analog Output (Figures 10 and 11) 2.0 3.0 4.5 5.5 30 20 15 15 35 25 18 18 40 30 22 20 ns tPZL, tPZH Maximum Propagation Delay, ON/OFF Control to Analog Output (Figures 10 and 1 1) 2.0 3.0 4.5 5.5 20 12 8.0 8.0 25 14 10 10 30 15 12 12 ns ON/OFF Control Input − 10 10 10 pF Control Input = GND Analog I/O Feedthrough − − 35 1.0 35 1.0 35 1.0 C Maximum Capacitance Typical @ 25°C, VCC = 5.0 V CPD 15 Power Dissipation Capacitance (Per Switch) (Figure 13)* pF * Used to determine the no−load dynamic power consumption: P D = CPD VCC2 f + ICC VCC . ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol BW − − − THD Parameter Test Conditions VCC V Limit* 25_C Unit Maximum On−Channel Bandwidth or Minimum Frequency Response (Figure 5) fin = 1 MHz Sine Wave Adjust fin Voltage to Obtain 0 dBm at VOS Increase fin Frequency Until dB Meter Reads –3 dB RL = 50 W, CL = 10 pF 4.5 5.5 150 160 MHz Off−Channel Feedthrough Isolation (Figure 6) fin  Sine Wave Adjust fin Voltage to Obtain 0 dBm at VIS fin = 10 kHz, RL = 600 W, CL = 50 pF 4.5 5.5 −50 −50 dB fin = 1.0 MHz, RL = 50 W, CL = 10 pF 4.5 5.5 −37 −37 Vin v 1 MHz Square Wave (tr = tf = 3 ns) Adjust RL at Setup so that IS = 0 A RL = 600 W, CL = 50 pF 4.5 5.5 100 200 RL = 10 kW, CL = 10 pF 4.5 5.5 50 100 fin  Sine Wave Adjust fin Voltage to Obtain 0 dBm at VIS fin = 10 kHz, RL = 600 W, CL = 50 pF 4.5 5.5 –70 –70 fin = 1.0 MHz, RL = 50 W, CL = 10 pF 4.5 5.5 –80 –80 Feedthrough Noise, Control to Switch (Figure 7) Crosstalk Between Any Two Switches (Figure 12) Total Harmonic Distortion (Figure 14) fin = 1 kHz, RL = 10 kW, CL = 50 pF THD = THDMeasured − THDSource VIS = 4.0 VPP sine wave VIS = 5.0 VPP sine wave *Guaranteed limits not tested. Determined by design and verified by qualification. www.onsemi.com 4 mVPP dB % 4.5 5.5 0.10 0.06 MC74LVXT4066 400 250 350 Is = 1mA 200 -55°C 300 Ron (Ohms) Ron (Ohms) 25°C 150 Is = 5mA 100 Is = 9mA 250 200 85°C 150 125°C 100 50 50 0 Is = 15mA 0 0.5 1.5 1 2 0 2.5 0 0.5 1.5 1 Vin (Volts) 2 2.5 Vin (Volts) Figure 1a. Typical On Resistance, VCC = 2.0 V, T = 25°C Figure 1b. Typical On Resistance, VCC = 2.0 V 35 25 30 20 20 Ron (Ohms) Ron (Ohms) 25 125°C 85°C 25°C -55°C 15 10 125°C 85°C 25°C -55°C 15 10 5 5 0 0 2 1 3 0 4 0 1 Vin (Volts) 3 2 4 Vin (Volts) Figure 1c. Typical On Resistance, VCC = 3.0 V Figure 1d. Typical On Resistance, VCC = 4.5 V 18 PLOTTER 16 125°C 85°C 25°C 14 Ron (Ohms) 12 10 -55°C 8 PROGRAMMABLE POWER SUPPLY - MINI COMPUTER + DC ANALYZER VCC DEVICE UNDER TEST 6 4 2 ANALOG IN COMMON OUT 0 0 1 2 3 4 5 6 GND Vin (Volts) Figure 2. On Resistance Test Set−Up Figure 1e. Typical On Resistance, VCC = 5.5 V www.onsemi.com 5 5 MC74LVXT4066 VCC VCC VCC VCC 14 GND 14 A A VCC OFF 7 SELECTED CONTROL INPUT VIL 7 Figure 3. Maximum Off Channel Leakage Current, Any One Channel, Test Set−Up VCC VIS 14 VIH VOS 14 ON 0.1mF CL* 7 SELECTED CONTROL INPUT Figure 4. Maximum On Channel Leakage Current, Test Set−Up VOS VCC fin N/C ON GND SELECTED CONTROL INPUT fin dB METER OFF 0.1mF CL* RL dB METER SELECTED CONTROL INPUT VCC 7 *Includes all probe and jig capacitance. *Includes all probe and jig capacitance. Figure 5. Maximum On−Channel Bandwidth Test Set−Up VCC VCC/2 Figure 6. Off−Channel Feedthrough Isolation, Test Set−Up VCC/2 14 RL RL OFF/ON VOS IS VCC CL* VIH VIL Vin ≤ 1 MHz tr = tf = 3 ns 7 ANALOG IN SELECTED CONTROL INPUT 50% GND tPHL tPLH CONTROL 50% ANALOG OUT *Includes all probe and jig capacitance. Figure 7. Feedthrough Noise, ON/OFF Control to Analog Out, Test Set−Up Figure 8. Propagation Delays, Analog In to Analog Out www.onsemi.com 6 MC74LVXT4066 VCC tr tf 14 ANALOG IN ANALOG OUT ON TEST POINT VCC 90% 50% 10% CONTROL GND CL* 7 SELECTED CONTROL INPUT tPZL tPLZ HIGH IMPEDANCE 50% VIH ANALOG OUT tPZH 10% VOL 90% VOH tPHZ 50% HIGH IMPEDANCE *Includes all probe and jig capacitance. Figure 9. Propagation Delay Test Set−Up Figure 10. Propagation Delay, ON/OFF Control to Analog Out VIS 1 POSITIONWHEN TESTING tPHZ AND tPZH VCC 2 POSITIONWHEN TESTING tPLZ AND tPZL 1 14 RL 2 VCC VCC fin 1 TEST POINT ON/OFF 2 0.1 mF 1 kW 14 OFF VIH OR VIL CL* RL RL VIH VIL VOS ON SELECTED CONTROL INPUT SELECTED CONTROL INPUT CL* VCC/2 RL CL* VCC/2 7 7 VCC/2 *Includes all probe and jig capacitance. *Includes all probe and jig capacitance. Figure 11. Propagation Delay Test Set−Up Figure 12. Crosstalk Between Any Two Switches, Test Set−Up VCC A VIS VCC 14 N/C OFF/ON VOS 0.1 mF N/C fin ON RL 7 VIH VIL CL* TO DISTORTION METER VCC/2 SELECTED CONTROL INPUT 7 SELECTED CONTROL INPUT VIH ON/OFF CONTROL *Includes all probe and jig capacitance. Figure 13. Power Dissipation Capacitance Test Set−Up Figure 14. Total Harmonic Distortion, Test Set−Up www.onsemi.com 7 MC74LVXT4066 0 -10 FUNDAMENTAL FREQUENCY -20 dBm -30 -40 -50 DEVICE -60 SOURCE -70 -80 -90 1.0 3.0 2.0 FREQUENCY (kHz) Figure 15. Plot, Harmonic Distortion APPLICATION INFORMATION The ON/OFF Control pins should be at VIH or VIL logic levels, VIH being recognized as logic high and VIL being recognized as a logic low. Unused analog inputs/outputs may be left floating (not connected). However, it is advisable to tie unused analog inputs and outputs to VCC or GND through a low value resistor. This minimizes crosstalk and feedthrough noise that may be picked−up by the unused I/O pins. The maximum analog voltage swings are determined by the supply voltages VCC and GND. The positive peak analog voltage should not exceed VCC. Similarly, the negative peak analog voltage should not go below GND. In the example below, the difference between VCC and GND is six volts. Therefore, using the configuration in Figure 16, a maximum analog signal of six volts peak−to−peak can be controlled. When voltage transients above VCC and/or below GND are anticipated on the analog channels, external diodes (Dx) are recommended as shown in Figure 17. These diodes should be small signal, fast turn−on types able to absorb the maximum anticipated current surges during clipping. An alternate method would be to replace the Dx diodes with Mosorbs (Mosorb™ is an acronym for high current surge protectors). Mosorbs are fast turn−on devices ideally suited for precise DC protection with no inherent wear out mechanism. VCC VCC = 6.0 V + 6.0 V 14 ANALOG I/O ON ANALOG O/I Dx + 6.0 V VIH SELECTED CONTROL INPUT 7 16 Dx ON 0V 0V VCC Dx VIH OTHER CONTROL INPUTS (VIH OR VIL) Dx SELECTED CONTROL INPUT 7 Figure 16. 6.0 V Application OTHER CONTROL INPUTS (VIH OR VIL) Figure 17. Transient Suppressor Application www.onsemi.com 8 MC74LVXT4066 +3 V +3V GND +5 V 14 ANALOG SIGNALS +3V ANALOG SIGNALS GND LVXT4066 6 14 15 CONTROL INPUTS ANALOG SIGNALS LVXT4066 LSTTL/ NMOS/ ABT/ ALS 5 1.8 - 2.5V CIRCUITRY 14 ANALOG SIGNALS 5 6 CONTROL INPUTS 14 15 7 7 R* = 2 TO 10 kW a. Low Voltage Logic Level Shifting Control b. Using LVXT4066 Figure 18. Low Voltage CMOS Interface CHANNEL 4 1 OF 4 SWITCHES CHANNEL 3 1 OF 4 SWITCHES CHANNEL 2 1 OF 4 SWITCHES CHANNEL 1 1 OF 4 SWITCHES COMMON I/O INPUT 1 OF 4 SWITCHES + OUTPUT LF356 OR EQUIVALENT 0.01 mF 1 2 3 4 CONTROL INPUTS Figure 19. 4−Input Multiplexer Figure 20. Sample/Hold Amplifier ORDERING INFORMATION Package Shipping† MC74LVXT4066DR2G SOIC−14 NB (Pb−Free) 2500 Tape & Reel MC74LVXT4066DTRG TSSOP−14 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−14 WB CASE 948G ISSUE C 14 DATE 17 FEB 2016 1 SCALE 2:1 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− K1 J J1 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE H G D DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ GENERIC MARKING DIAGRAM* 14 SOLDERING FOOTPRINT XXXX XXXX ALYWG G 7.06 1 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: 98ASH70246A DESCRIPTION: TSSOP−14 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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