Hex Inverter
MC74VHC04
The MC74VHC04 is an advanced high speed CMOS inverter
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
to 3 V systems.
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MARKING DIAGRAMS
14
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 3.8 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 36 FETs or 9 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
A1
1
2
Y5
9
A4
8
Y4
Y6
Figure 1. Logic Diagram
© Semiconductor Components Industries, LLC, 2014
July, 2020 − Rev. 7
10
Y3
GND
A6
11
12
12
13
A5
Y5
7
10
A3
6
11
Y4
5
A5
Y6
VHC04G
AWLYWW
1
14
VHC
04
ALYWG
G
TSSOP−14
DT SUFFIX
CASE 948G
1
1
A
WL, L
Y
WW, W
G or G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
FUNCTION TABLE
Inputs
Outputs
A
Y
L
H
H
L
ORDERING INFORMATION
Y2
4
A4
8
A6
Y3
Y=A
9
VCC
13
A2
14
6
3
5
Y1
2
A3
Y2
1
A2
4
1
Y1
A1
3
SOIC−14
D SUFFIX
CASE 751A
Figure 2. Pinout:
14−Lead Packages
(Top View)
1
Package
Shipping†
SOIC−14
(Pb−Free)
2500 / Tape &
Reel
TSSOP−14
(Pb−Free)
2500 / Tape &
Reel
NLV74VHC04DTR2G TSSOP−14
(Pb−Free)
2500 / Tape &
Reel
Device
MC74VHC04DR2G
MC74VHC04DTR2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MC74VHC04/D
MC74VHC04
MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Parameter
–0.5 to + 7.0
V
Vin
DC Input Voltage
–0.5 to + 7.0
V
Vout
DC Output Voltage
–0.5 to VCC + 0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
2.0
5.5
V
DC Input Voltage
0
5.5
V
DC Output Voltage
0
VCC
V
−40
+ 85
_C
0
0
100
20
ns/V
VCC
DC Supply Voltage
Vin
Vout
TA
Operating Temperature
tr, tf
Input Rise and Fall Time
VCC = 3.3V ±0.3V
VCC = 5.0V ±0.5V
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VCC
V
Test Conditions
VIH
Minimum High−Level
Input Voltage
2.0
3.0 to
5.5
VIL
Maximum Low−Level
Input Voltage
2.0
3.0 to
5.5
VOH
Minimum High−Level
Output Voltage
Vin = VIH or VIL
IOH = −50μA
Vin = VIH or VIL
IOH = −4mA
IOH = −8mA
VOL
Maximum Low−Level
Output Voltage
Vin = VIH or VIL
IOL = 50μA
TA = 25°C
Min
Max
1.50
VCC x 0.7
Min
2.0
3.0
4.5
1.9
2.9
4.4
3.0
4.5
2.58
3.94
Max
1.50
VCC x 0.7
0.50
VCC x 0.3
2.0
3.0
4.5
Vin = VIH or VIL
IOL = 4mA
IOL = 8mA
Typ
TA = −40 to 85°C
2.0
3.0
4.5
Unit
V
0.50
VCC x 0.3
V
V
1.9
2.9
4.4
2.48
3.80
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
V
Iin
Maximum Input
Leakage Current
Vin = 5.5 or GND
0 to 5.5
± 0.1
± 0.1
μA
ICC
Maximum Quiescent
Supply Current
Vin = VCC or GND
5.5
2.0
20.0
μA
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2
MC74VHC04
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation Delay,
A or B to Y
Cin
Test Conditions
Min
TA = −40 to 85°C
Typ
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
5.0
7.5
7.1
10.6
1.0
1.0
8.5
12.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
4
10
Maximum Input Capacitance
10
pF
Typical @ 25°C, VCC = 5.0V
18
CPD
Power Dissipation Capacitance (Per Inverter) (Note 1)
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 6 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.4
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.4
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
TEST POINT
VCC
A
OUTPUT
50%
DEVICE
UNDER
TEST
GND
tPLH
Y
tPHL
CL*
50% VCC
*Includes all probe and jig capacitance
Figure 3. Switching Waveforms
Figure 4. Test Circuit
INPUT
Figure 5. Input Equivalent Circuit
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE L
14
1
SCALE 1:1
D
DATE 03 FEB 2016
A
B
14
8
A3
E
H
L
1
0.25
B
M
DETAIL A
7
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
14
14X
1.18
XXXXXXXXXG
AWLYWW
1
1
1.27
PITCH
XXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−14
CASE 751A−03
ISSUE L
DATE 03 FEB 2016
STYLE 1:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 2:
CANCELLED
STYLE 3:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON CATHODE
STYLE 4:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 5:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 6:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 7:
PIN 1. ANODE/CATHODE
2. COMMON ANODE
3. COMMON CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. ANODE/CATHODE
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. COMMON CATHODE
12. COMMON ANODE
13. ANODE/CATHODE
14. ANODE/CATHODE
STYLE 8:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−14 WB
CASE 948G
ISSUE C
14
DATE 17 FEB 2016
1
SCALE 2:1
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
DETAIL E
K
A
−V−
K1
J J1
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
G
D
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
GENERIC
MARKING DIAGRAM*
14
SOLDERING FOOTPRINT
XXXX
XXXX
ALYWG
G
7.06
1
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
98ASH70246A
DESCRIPTION:
TSSOP−14 WB
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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