MC74VHCT138A
3-to-8 Line Decoder
The MC74VHCT138A is an advanced high speed CMOS 3−to−8
decoder fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
When the device is enabled, three Binary Select inputs (A0 − A2)
determine which one of the outputs (Y0 − Y7) will go Low. When
enable input E3 is held Low or either E2 or E1 is held High, decoding
function is inhibited and all outputs go high. E3, E2, and E1 inputs are
provided to ease cascade connection and for use as an address decoder
for memory systems.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because they
have full 5.0 V CMOS level output swings.
The VHCT138A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
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MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
1
1
16
•
•
High Speed: tPD = 7.6 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Designed for 4.5 V to 5.5 V Operating Range
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
Chip Complexity: 122 FETs or 30.5 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
VHCT
138A
ALYWG
G
TSSOP−16
DT SUFFIX
CASE 948F
1
1
Features
•
•
•
•
•
•
•
•
•
VHCT138AG
AWLYWW
A
= Assembly Location
WL, L
= Wafer Lot
Y
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
A0
1
16
VCC
A1
2
15
Y0
A2
3
14
Y1
E1
4
13
Y2
E2
5
12
Y3
E3
6
11
Y4
Y7
7
10
Y5
GND
8
9
Y6
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
May, 2011 − Rev. 4
1
Publication Order Number:
MC74VHCT138A/D
MC74VHCT138A
FUNCTION TABLE
Inputs
LOGIC DIAGRAM
Outputs
15
E3
E2
E1 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7
X
X
L
X
H
X
H
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
L
H
L
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
L
H
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
H
H
H
H
L
A0
SELECT
INPUTS
A1
A2
E3
ENABLE
INPUTS
E2
E1
Y0
14
Y1
13
Y2
12
Y3
11
Y4
10
Y5
9
Y6
7
Y7
1
2
3
6
5
4
H = high level (steady state); L = low level (steady state);
X = don’t care
EXPANDED LOGIC DIAGRAM
15
14
A0
A1
13
1
12
2
11
A2
3
10
E2
E1
Y1
Y2
Y3
Y4
Y5
5
4
9
7
E3
Y0
6
IEC LOGIC DIAGRAM
A0
1
A1
2
A2
3
BIN/OCT
1
0
2
4
&
E3
6
E2
5
E1
4
EN
15 Y0
A0
1
1
14 Y1
A1
2
2
13 Y2
A2
3
3
12 Y3
4
11 Y4
5
10 Y5
E3
6
6
9 Y6
E2
5
7
7 Y7
E1
4
DMUX
0
0
G
7
2
&
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2
0
15 Y0
1
14 Y1
2
13 Y2
3
12 Y3
4
11 Y4
5
10 Y5
6
9 Y6
7
7 Y7
Y6
Y7
ACTIVE-LOW
OUTPUTS
MC74VHCT138A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Parameter
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current (VOUT < GND; VOUT > VCC)
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
VCC = 0
High or Low State
SOIC Packages†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating − SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage
Vin
DC Input Voltage
Vout
DC Output Voltage
TA
Operating Temperature
tr, tf
Input Rise and Fall Time
Min
Max
Unit
3.0
5.5
V
0
5.5
V
0
0
5.5
VCC
V
− 55
+ 125
_C
0
20
ns/V
VCC = 0
High or Low State
VCC =5.0V ±0.5V
The qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table
and figure below.
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
419,300
TJ = 90 ° C
1,032,200
90
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
1
1
10
100
TIME, YEARS
Figure 1. Failure Rate vs. Time
Junction Temperature
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3
1000
MC74VHCT138A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
1.4
2.0
2.0
VIH
Minimum High−Level Input
Voltage
3.0
4.5
5.5
VIL
Maximum Low−Level Input
Voltage
3.0
4.5
5.5
VOH
Minimum High−Level Output
Voltage
VIN = VIH or VIL
VOL
Maximum Low−Level Output
Voltage
VIN = VIH or VIL
TA = 25°C
VCC
(V)
Typ
TA ≤ 85°C
Max
Min
1.4
2.0
2.0
0.53
0.8
0.8
VIN = VIH or VIL
IOH = −50 mA
3.0
4.5
2.9
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
VIN = VIH or VIL
IOL = 50 mA
3.0
4.5
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
Max
3.0
4.5
TA ≤ 125°C
Min
Max
1.4
2.0
2.0
0.53
0.8
0.8
V
0.53
0.8
0.8
2.9
4.4
2.9
4.4
2.48
3.80
2.34
3.66
Unit
V
V
V
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
V
IIN
Maximum Input Leakage Current
VIN = 5.5 V or GND
0 to 5.5
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply
Current
VIN = VCC or GND
5.5
4.0
40.0
40.0
mA
ICCT
Quiescent Supply Current
VIN = 3.4 V
5.5
1.35
1.50
1.50
mA
IOPD
Output Leakage Current
VOUT = 5.5 V
0.0
0.5
5.0
5.0
mA
TA = ≤ 85°C
TA ≤ 125°C
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation Delay,
Input A to Y
tPLH,
tPHL
tPLH,
tPHL
CIN
Maximum Propagation Delay,
Input E3 to Y
Maximum Propagation Delay,
Input E1 or E2 to Y
Test Conditions
Min
Typ
Max
Min
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
9.5
10.8
14.5
15.5
1.0
1.0
16.0
17.0
1.0
1.0
16.0
17.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
7.6
8.1
10.4
11.4
1.0
1.0
12.0
13.0
1.0
1.0
12.0
13.0
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
9.7
9.5
13.0
14.0
1.0
1.0
14.5
15.5
1.0
1.0
14.5
15.5
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
6.6
7.1
9.1
10.1
1.0
1.0
10.5
11.5
1.0
1.0
10.5
11.5
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
10.1
9.9
14.0
15.0
1.0
1.0
15.5
16.5
1.0
1.0
15.5
16.5
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
7.0
7.5
9.6
10.6
1.0
1.0
11.0
12.0
1.0
1.0
11.0
12.0
4
10
Maximum Input Capacitance
10
10
ns
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD
49
Power Dissipation Capacitance (Note 1)
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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4
MC74VHCT138A
SWITCHING WAVEFORMS
VALID
VALID
3V
3V
A
1.5V
GND
GND
tPLH
Y
1.5V
E3
tPHL
tPHL
VOH
tPLH
1.5V
VOH
1.5V
Y
VOL
VOL
Figure 2.
Figure 3.
3V
E2 or E1
1.5V
GND
tPLH
tPHL
VOH
Y
1.5V
VOL
Figure 4.
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
Figure 5. Test Circuit
ORDERING INFORMATION
Package
Shipping†
MC74VHCT138ADR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC74VHCT138ADTRG
TSSOP−16*
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
−A−
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
16 PL
0.25 (0.010)
M
T B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR, DYE #1
BASE, #1
EMITTER, #1
COLLECTOR, #1
COLLECTOR, #2
BASE, #2
EMITTER, #2
COLLECTOR, #2
COLLECTOR, #3
BASE, #3
EMITTER, #3
COLLECTOR, #3
COLLECTOR, #4
BASE, #4
EMITTER, #4
COLLECTOR, #4
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 5:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
DRAIN, DYE #1
DRAIN, #1
DRAIN, #2
DRAIN, #2
DRAIN, #3
DRAIN, #3
DRAIN, #4
DRAIN, #4
GATE, #4
SOURCE, #4
GATE, #3
SOURCE, #3
GATE, #2
SOURCE, #2
GATE, #1
SOURCE, #1
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
STYLE 7:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
SOURCE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE P‐CH
SOURCE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE N‐CH
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
EMITTER, #4
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC−16
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16
DATE 19 OCT 2006
1
SCALE 2:1
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
S
V
S
K
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT
7.06
16
XXXX
XXXX
ALYW
1
1
0.65
PITCH
16X
0.36
DOCUMENT NUMBER:
DESCRIPTION:
16X
1.26
98ASH70247A
TSSOP−16
DIMENSIONS: MILLIMETERS
XXXX
A
L
Y
W
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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