MC74VHCT259A
8-Bit Addressable
Latch/1-of-8 Decoder
CMOS Logic Level Shifter
with LSTTL−Compatible Inputs
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The MC74VHCT259 is an 8−bit Addressable Latch fabricated with
silicon gate CMOS technology. It achieves high speed operation
similar to equivalent Bipolar Schottky TTL while maintaining CMOS
low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The VHC259 is designed for general purpose storage applications in
digital systems. The device has four modes of operation as shown in
the mode selection table. In the addressable latch mode, the signal on
Data In is written into the addressed latch. The addressed latch follows
the data input with all non−addressed latches remaining in their
previous states. In the memory mode, all latches remain in their
previous state and are unaffected by the Data or Address inputs. In the
one−of−eight decoding or demultiplexing mode, the addressed output
follows the state of Data In with all other outputs in the LOW state. In
the Reset mode, all outputs are LOW and unaffected by the address
and data inputs. When operating the VHCT259 as an addressable
latch, changing more than one bit of the address could impose a
transient wrong address. Therefore, this should only be done while in
the memory mode.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V because it
has full 5.0 V CMOS level output swings.
The VHCT259A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage−input/output voltage mismatch, battery backup, hot
insertion, etc.
MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
1
VHCT259AG
AWLYWW
1
16
VHCT
259A
ALYWG
G
TSSOP−16
DT SUFFIX
CASE 948F
1
1
A
= Assembly Location
WL, L
= Wafer Lot
Y
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Features
•
•
•
•
•
•
•
•
High Speed: tPD = 7.6 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs and Outputs
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V
These Devices are Pb−Free and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 6
1
Publication Order Number:
MC74VHCT259A/D
MC74VHCT259A
4
A0
ADDRESS
INPUTS
A1
1
5
Q0
Q1
2
6
Q2
7
9
10
Q3
Q4
Q5
11
12
3
A2
13
DATA IN
14
ENABLE
1
16
VCC
A1
2
15
RESET
A2
3
14
ENABLE
Q0
4
13
DATA IN
Q6
Q1
5
12
Q7
Q7
Q2
6
11
Q6
Q3
7
10
Q5
GND
8
9
Q4
PIN 16 = VCC
PIN 8 = GND
15
RESET
NONINVERTING
OUTPUTS
A0
Figure 2. Pin Assignment
Figure 1. Logic Diagram
1
A0
A1
2
A2
3
BIN/OCT
1
4
0
2
1
4
2
5
6
7
3
8
4
13
ID
5
14
EN
6
15
R
10
11
12
7
A0
1
Q1
A1
2
Q2
A2
3
Q0
DMUX
0
0
0
G
7
2
1
2
Q3
3
Q4
4
13
Q5
14
Q6
15
Q7
ID
5
EN
6
R
7
4
5
6
7
8
10
11
12
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Figure 3. IEC Logic Symbol
MODE SELECTION TABLE
Enable
Reset
LATCH SELECTION TABLE
Mode
Address Inputs
Addressable Latch
C
B
A
Latch
Addressed
L
H
H
H
Memory
L
L
L
Q0
L
L
8−Line Demultiplexer
L
L
H
Q1
H
L
Reset
L
H
L
Q2
L
H
H
Q3
H
L
L
Q4
H
L
H
Q5
H
H
L
Q6
H
H
H
Q7
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2
MC74VHCT259A
DATA INPUT
13
D
D
D
D
4
5
6
7
Q0
Q1
Q2
Q3
A0
ADDRESS
INPUTS
3 TO 8
DECODER
A1
D
9
Q4
A2
D
ENABLE
Q5
14
D
D
RESET
10
15
Figure 4. Expanded Logic Diagram
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3
11
12
Q6
Q7
MC74VHCT259A
MAXIMUM RATINGS
Symbol
Parameter
VCC
Positive DC Supply Voltage
Value
Unit
−0.5 to +7.0
V
−0.5 to +7.0
V
−0.5 to +7.0
−0.5 to VCC +0.5
V
VIN
Digital Input Voltage
VOUT
DC Output Voltage
IIK
Input Diode Current
−20
mA
Output in 3−State
High or Low State
IOK
Output Diode Current
$20
mA
IOUT
DC Output Current, per Pin
$25
mA
ICC
DC Supply Current, VCC and GND Pins
PD
Power Dissipation in Still Air
TSTG
Storage Temperature Range
VESD
ESD Withstand Voltage
ILATCHUP
qJA
Latchup Performance
$75
mA
200
180
mW
−65 to +150
°C
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
>2000
V
Above VCC and Below GND at 125°C (Note 4)
$300
mA
143
164
°C/W
SOIC
TSSOP
Thermal Resistance, Junction−to−Ambient
SOIC
TSSOP
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC
DC Supply Voltage
VIN
DC Input Voltage
VOUT
DC Output Voltage
Output in 3−State
High or Low State
TA
Operating Temperature Range, all Package Types
tr, tf
Input Rise or Fall Time
VCC = 5.0 V + 0.5 V
Min
Max
Unit
4.5
5.5
V
0
5.5
V
0
0
5.5
VCC
V
−55
125
°C
0
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
419,300
TJ = 90 ° C
1,032,200
90
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO
0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 5. Failure Rate vs. Time Junction Temperature
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4
MC74VHCT259A
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
(V)
Min
VIH
Minimum High−Level
Input Voltage
4.5 to 5.5
2
VIL
Maximum Low−Level
Input Voltage
4.5 to 5.5
VOH
Maximum High−Level
Output Voltage
VOL
Parameter
Maximum Low−Level
Output Voltage
Condition
TA ≤ 85°C
TA = 25°C
Typ
Max
Min
Max
2
−55°C ≤ TA ≤ 125°C
Min
Max
2
0.8
0.8
Unit
V
0.8
V
V
VIN = VIH or VIL
IOH = −50 mA
4.5
4.4
VIN = VIH or VIL
IOH = −8 mA
4.5
3.94
VIN = VIH or VIL
IOL = 50 mA
4.5
VIN = VIH or VIL
IOH = 8 mA
4.5
4.4
4.4
3.8
3.66
V
0
0.1
0.1
0.1
4.5
0.36
0.44
0.52
IIN
Input Leakage Current
VIN = 5.5 V or GND
0 to 5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
4.0
40.0
40.0
mA
ICCT
Additional Quiescent
Supply Current
(per Pin)
Any one input:
VIN = 3.4 V
All other inputs:
VIN = VCC or GND
5.5
1.35
1.5
1.5
mA
IOPD
Output Leakage Current
VOUT = 5.5 V
0
0.5
5
5
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = ≤ 85°C
TA = 25°C
Min
Max
Min
Max
Min
Max
Unit
ns
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation
Delay, Data to Output
(Figures 6 and 11)
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
8.5
8.5
11.0
16.0
1.0
1.0
13.0
18.0
1.0
1.0
13.0
18.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
6.0
6.0
8.0
10.0
1.0
1.0
9.5
11.5
1.0
1.0
9.5
11.5
Maximum Propagation
Delay, Address Select
to Output
(Figures 7 and 11)
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
8.5
8.5
11.0
16.0
1.0
1.0
13.0
18.0
1.0
1.0
13.0
18.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
6.0
8.5
8.0
10.0
1.0
1.0
9.5
11.5
1.0
1.0
9.5
11.5
Maximum Propagation
Delay, Enable to Output
(Figures 8 and 11)
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
8.5
8.5
11.0
16.0
1.0
1.0
13.0
18.0
1.0
1.0
13.0
18.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
6.0
8.5
8.0
10.0
1.0
1.0
9.5
11.5
1.0
1.0
9.5
11.5
Maximum Propagation
Delay, Reset to Output
(Figures 9 and 11)
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
8.5
8.5
11.0
16.0
1.0
1.0
13.0
18.0
1.0
1.0
13.0
18.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
6.0
8.5
8.0
10.0
1.0
1.0
9.5
11.5
1.0
1.0
9.5
11.5
6
10
tPLH,
tPHL
tPLH,
tPHL
tPHL
CIN
Test Conditions
−55°C ≤ TA ≤ 125°C
Typ
Maximum Input
Capacitance
10
10
ns
ns
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD
30
Power Dissipation Capacitance (Note 5)
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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5
MC74VHCT259A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
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ÎÎ
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ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIMING REQUIREMENTS (Input tr = tf = 3.0ns)
TA = ≤ 85°C
TA = 25°C
Test Conditions
Min
Minimum Pulse Width, Reset or Enable
(Figure 10)
VCC = 3.3 ± 0.3V
5.0
5.5
5.5
VCC = 5.0 ± 0.5V
5.0
5.5
5.5
Minimum Setup Time, Address or Data to Enable
(Figure 10)
VCC = 3.3 ± 0.3V
4.5
4.5
4.5
VCC = 5.0 ± 0.5V
3.0
3.0
3.0
Minimum Hold Time, Enable to Address or Data
(Figure 8 or 9)
VCC = 3.3 ± 0.3V
2.0
2.0
2.0
VCC = 5.0 ± 0.5V
2.0
Maximum Input, Rise and Fall Times
(Figure 6)
VCC = 3.3 ± 0.3V
400
300
300
VCC = 5.0 ± 0.5V
200
100
100
Symbol
tw
tsu
th
tr, tf
Parameter
Typ
Max
Min
TA = ≤ 125°C
Max
Min
2.0
Max
Unit
ns
ns
ns
2.0
ns
VCC
tr
DATA IN
tf
VCC
50%
DATA IN
GND
ADDRESS
SELECT
VCC
50%
GND
GND
tPLH
tPHL
VCC
50%
GND
50%
tPHL
OUTPUT Q
tPHL
OUTPUT Q
50%
Figure 6. Switching Waveform
Figure 7. Switching Waveform
VCC
DATA IN
tw
VCC
GND
DATA IN
VCC
RESET
GND
tw
ENABLE
50%
50%
tw
50%
VCC
50%
GND
GND
tPHL
tPHL
tPHL
OUTPUT Q
OUTPUT Q
50%
Figure 8. Switching Waveform
Figure 9. Switching Waveform
TEST POINT
DATA IN
OR
ADDRESS
SELECT
VCC
50%
th(H)
tsu
th(H)
tsu
GND
OUTPUT
DEVICE
UNDER
TEST
CL*
VCC
ENABLE
50%
GND
*Includes all probe and jig capacitance
Figure 10. Switching Waveform
Figure 11. Test Circuit
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6
MC74VHCT259A
ORDERING INFORMATION
Package
Shipping†
MC74VHCT259ADG
SOIC−16
(Pb−Free)
48 Units / Rail
MC74VHCT259ADR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC74VHCT259ADTG
TSSOP−16
(Pb−Free)
96 Units / Rail
MC74VHCT259ADTRG
TSSOP−16
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
−A−
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
16 PL
0.25 (0.010)
M
T B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR, DYE #1
BASE, #1
EMITTER, #1
COLLECTOR, #1
COLLECTOR, #2
BASE, #2
EMITTER, #2
COLLECTOR, #2
COLLECTOR, #3
BASE, #3
EMITTER, #3
COLLECTOR, #3
COLLECTOR, #4
BASE, #4
EMITTER, #4
COLLECTOR, #4
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 5:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
DRAIN, DYE #1
DRAIN, #1
DRAIN, #2
DRAIN, #2
DRAIN, #3
DRAIN, #3
DRAIN, #4
DRAIN, #4
GATE, #4
SOURCE, #4
GATE, #3
SOURCE, #3
GATE, #2
SOURCE, #2
GATE, #1
SOURCE, #1
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
STYLE 7:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
SOURCE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE P‐CH
SOURCE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE N‐CH
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
EMITTER, #4
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC−16
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16
DATE 19 OCT 2006
1
SCALE 2:1
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
S
V
S
K
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT
7.06
16
XXXX
XXXX
ALYW
1
1
0.65
PITCH
16X
0.36
DOCUMENT NUMBER:
DESCRIPTION:
16X
1.26
98ASH70247A
TSSOP−16
DIMENSIONS: MILLIMETERS
XXXX
A
L
Y
W
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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