MCH3209-TL-E

Ordering number : EN7129C MCH3109/MCH3209 Bipolar Transistor http://onsemi.com (–)30V, (–)3A, Low VCE(sat), (PNP)NPN Single MCPH3 Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of MBIT processes • High-speed switching Low collector-to-emitter saturation voltage Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation Specifications ( ) : MCH3109 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--30)40 V (--)30 V (--)5 V (--)3 A Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current (--)5 (--)600 When mounted on ceramic substrate (600mm2×0.8mm) A mA 0.8 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7019A-004 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.25 MCH3109-TL-E MCH3209-TL-E 0.15 2.0 Packing Type : TL Marking 1.6 2.1 0.25 2 TL MCH3109 CJ LOT No. 1 0.65 AJ LOT No. 0 to 0.02 LOT No. LOT No. 3 MCH3209 0.3 0.07 0.85 Electrical Connection 3 1 : Base 2 : Emitter 3 : Collector 1 MCPH3 3 1 2 MCH3109 2 MCH3209 Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/42806 MSIM TB-00002274/D1504EA TSIM TB-00000344/N3001 TSIM TA-3372, 3373 No.7129-1/7 MCH3109 / MCH3209 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ Unit max ICBO IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA Output Capacitance Cob VCE(sat)1 VCB=(--)10V, f=1MHz IC=(--)1.5A, IB=(--)30mA (--155)120 (--230)180 mV VCE(sat)2 VBE(sat) IC=(--)1.5A, IB=(--)75mA IC=(--)1.5A, IB=(--)30mA (--)105 (--)155 mV (--)0.83 (--)1.2 V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 200 (--)0.1 μA (--)0.1 μA 560 (380)450 MHz (25)20 pF V (--30)40 V (--)30 V (--)5 V (50)30 ns (270)300 ns (25)15 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 50Ω + 100μF VBE= --5V + 470μF VCC=12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) Ordering Information Package Shipping MCH3109-TL-E MCPH3 3,000pcs./reel MCH3209-TL-E MCPH3 3,000pcs./reel A --10m --8mA --1.6 --1.2 --6mA --4mA --0.8 --2mA --0.4 Collector Current, IC -- A --3 0 1.6 A mA A --40m mA --50m A Collector Current, IC -- A 0 --2 Pb Free IC -- VCE 2.0 MCH3109 memo 20m IC -- VCE --2.0 40mA 50mA 30mA Device 10 mA 8m A 6mA 4mA 1.2 0.8 2mA 0.4 IB=0mA 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV --1000 IT03993 MCH3209 IB=0mA 0 0 200 400 600 800 Collector-to-Emitter Voltage, VCE -- mV 1000 IT03994 No.7129-2/7 MCH3109 / MCH3209 IC -- VBE --1.5 25°C --25°C --2.0 --1.0 --0.5 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 1.5 1.0 Ta=75°C --25°C 25°C 100 7 5 5 2 3 5 7 --1.0 2 3 5 3 2 100 7 5 3 2 3 5 7 --100 2 3 5 7 --1000 2 Collector Current, IC -- mA 5 Output Capacitance, Cob -- pF 5 3 2 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT04001 2 3 5 7 1.0 2 3 5 7 10 IT03998 f T -- IC MCH3209 VCE=10V 3 2 100 7 5 3 2 2 3 5 7 100 2 3 5 7 1000 2 3 IT04000 Cob -- VCB 2 7 3 5 7 0.1 Collector Current, IC -- mA MCH3109 f=1MHz 2 3 IT03999 100 10 --1.0 2 5 10 0.01 3 Cob -- VCB 2 --25°C 7 Gain-Bandwidth Product, f T -- MHz MCH3109 VCE= --10V 2 Ta=75°C 1000 7 10 --10 MCH3209 VCE=2V Collector Current, IC -- A f T -- IC 1000 hFE -- IC 7 10 0.01 5 7 --10 IT03997 Collector Current, IC -- A 1.2 IT03996 100 2 2 1.0 25°C 3 5 7 --0.1 0.8 3 2 3 0.6 7 3 2 0.4 1000 2 10 --0.01 0.2 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE 3 0 IT03995 MCH3109 VCE= --2V 7 5 --1.2 hFE -- IC 1000 DC Current Gain, hFE 2.0 0 0 Gain-Bandwidth Product, f T -- MHz 2.5 0.5 0 Output Capacitance, Cob -- pF MCH3209 VCE=2V 3.0 Collector Current, IC -- A --2.5 Ta=75°C Collector Current, IC -- A --3.0 IC -- VBE 3.5 MCH3109 VCE= --2V Ta=75°C 25°C --25°C --3.5 MCH3209 f=1MHz 100 7 5 3 2 10 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT04002 No.7129-3/7 MCH3109 / MCH3209 VCE(sat) -- IC 3 2 --0.1 7 5 C 75° Ta= °C 5°C 2 --25 3 2 --0.01 7 5 3 2 --0.001 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT04003 Collector Current, IC -- A 3 2 C 75° Ta= °C 5°C --25 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 MCH3109 IC / IB=50 2 Ta= --25°C 7 25°C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A op era 3 2 s tio 3 2 0.1 7 5 0m s 0μ DC 10 s ms s 0μ 50 1.0 7 5 n MCH3109 / MCH3209 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 3 5 7 10 IT04004 1.0 7 5 3 2 0.1 7 5 C 75° Ta= °C 5°C --25 2 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04006 VBE(sat) -- IC MCH3209 IC / IB=50 5 3 2 1.0 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT04008 PC -- Ta 10 10 2 3 2 1.0 1m 5 7 1.0 Collector Current, IC -- A ASO ICP=5A IC=3A 3 MCH3209 IC / IB=50 0.1 0.01 5 7 --10 IT04007 Collector Current, IC -- A 2 7 3 75°C 5 7 0.1 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 5 3 10 7 --1.0 2 VCE(sat) -- IC 0.01 0.01 VBE(sat) -- IC --10 3 2 3 2 Collector Current, IC -- A 5 7 --10 IT04005 Collector Current, IC -- A °C 25 0.01 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 3 2 C 75° Ta= °C --25 3 2 0.001 0.01 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 10 7 5 0.1 7 5 10 7 5 MCH3109 IC / IB=50 --0.1 7 5 MCH3209 IC / IB=20 3 2 VCE(sat) -- IC --10 7 5 VCE(sat) -- IC 1.0 7 5 MCH3109 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 60 0m m2 ✕0 0.2 .8m m ) 0 3 5 IT04010 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03981 No.7129-4/7 MCH3109 / MCH3209 Taping Specification MCH3109-TL-E, MCH3209-TL-E No.7129-5/7 MCH3109 / MCH3209 Outline Drawing MCH3109-TL-E, MCH3209-TL-E Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.7129-6/7 MCH3109 / MCH3209 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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