Ordering number : EN6387B
MCH6101
Bipolar Transistor
–15V, –1.5A, Low VCE(sat), PNP Single MCPH6
http://onsemi.com
Applications
•
Relay drivers, lamp drivers, motor drivers, flash
Features
•
•
•
•
• Large current capacity
Adoption of MBIT processes
• High-speed switching
Low collector-to-emitter saturation voltage
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Unit
--15
V
--15
V
--5
V
--1.5
A
Collector Current (Pulse)
VEBO
IC
ICP
Base Current
IB
--300
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
Collector Current
--3
When mounted on ceramic substrate (600mm2×0.8mm)
A
mA
1.0
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-007
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
0.15
Packing Type : TL
2
3
0.65
1
6
2
5
TL
0.3
0.85
0.25
1
AA
LOT No.
0 to 0.02
Marking
LOT No.
0.07
MCH6101-TL-E
4
2.1
1.6
0.25
2.0
3
4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
MCPH6
Semiconductor Components Industries, LLC, 2013
September, 2013
Electrical Connection
1, 2,
3
4
D0512 TKIM TC-00002850/D1004 TSIM TB-00000350/70500TS (KOTO) TA-2787 No.6387-1/6
MCH6101
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
VCE= --2V, IC= --100mA
VCE= --2V, IC= --300mA
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
min
typ
max
VCB= --12V, IE=0A
VEB= --4V, IC=0A
fT
Cob
Output Capacitance
Ratings
Conditions
200
Unit
--0.1
μA
--0.1
μA
560
430
VCB= --10V, f=1MHz
IC= --750mA, IB= --15mA
MHz
15
IC= --750mA, IB= --15mA
IC= --10μA, IE=0A
IC= --1mA, RBE=∞
V(BR)EBO
ton
IE= --10μA, IC=0A
tstg
tf
See specified Test Circuit.
pF
--110
--180
--0.85
--1.2
mV
V
--15
V
--15
V
--5
V
30
ns
90
ns
12
ns
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
OUTPUT
RB
RL
+
+
220μF
470μF
VBE=5V
VCC= --5V
IC=20IB1= --20IB2= --750mA
Ordering Information
Shipping
memo
MCPH6
3,000pcs./reel
Pb Free
IC -- VCE
--40m
--1.6
0m
--20mA
VCE= --2V
A
--10mA
--8mA
--50
m
--1.0
--1.4
--15mA
--1.4
--1.2
IC -- VBE
--1.6
--6mA
--4mA
--0.8
--0.6
--2mA
--0.4
--1.2
--1.0
--0.8
--0.6
--0.4
25°C
--25°C
--3
A
--1.8
A
Collector Current, IC -- A
--2.0
Collector Current, IC -- A
Package
Ta=7
5°C
Device
MCH6101-TL-E
--0.2
--0.2
IB=0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8 --0.9
Collector-to-Emitter Voltage, VCE -- V
--1.0
IT00882
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Base-to-Emitter Voltage, VBE -- V
--0.9
--1.0
IT00884
No.6387-2/6
MCH6101
hFE -- IC
1000
VCE= --2V
Gain-Bandwidth Product, f T -- MHz
7
DC Current Gain, hFE
5
Ta=75°C
25°C
3
--25°C
2
100
7
5
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
5
3
2
100
7
5
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
IT00886
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
10
7
5
3
2
3
IC / IB=20
7
5
2
IT00888
VCE(sat) -- IC
--1000
f=1MHz
7
Output Capacitance, Cob -- pF
VCE= --2V
7
3
--0.01
3
Cob -- VCB
100
f T -- IC
1000
5
3
2
--100
7
C
75°
5
Ta=
°C
--25 25°C
3
2
--10
1.0
2
--1.0
3
5
7
2
--10
Collector-to-Base Voltage, VCB -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
Ta
5
3
25°C
5°C
=7
C
--25°
2
--10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
10
IC= --1.5A
0m
10
s
ms
10
0μ
s
DC
op
era
tio
3
n
2
--0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (600mm2✕0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Collector-to-Emitter Voltage, VCE -- V
2
3
IT00892
2
--1.0
Ta= --25°C
7
75°C
5
25°C
3
2
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
IT00896
PC -- Ta
When mounted on ceramic substrate
(600mm2✕0.8mm)
1.2
s
--1.0
7
5
7 --1.0
3
IT00894
Collector Dissipation, PC -- W
2
5
IC / IB=50
--0.1
--0.01
3
0μ
50
Collector Current, IC -- A
3
1ms
3
5
1.4
ICP= --3A
2
VBE(sat) -- IC
ASO
--10
7
5
7 --0.1
7
3
7
5
--10
5
--100
3
Collector Current, IC -- A
IC / IB=50
7
2
IT00890
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
--0.01
3
1.0
0.8
0.6
0.4
0.2
0
2
3
IT00898
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00899
No.6387-3/6
MCH6101
Embossed Taping Specification
MCH6101-TL-E
No.6387-4/6
MCH6101
Outline Drawing
MCH6101-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.6387-5/6
MCH6101
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PS No.6387-6/6