MCH6545-TL-E

Ordering number : EN8953A MCH6545 Bipolar Transistor http://onsemi.com (–)50V, (–)1A, Low VCE(sat) Complementary Dual MCPH6 Applicaitons • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting Ultrasmall package allows applied sets to be made small and thin Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Total Power Dissipation Ratings Unit (--50)60 V (--)50 V VEBO IC (--)5 ICP PC Collector Dissipation Conditions VCBO VCEO Junction Temperature PT Tj Storage Temperature Tstg (--)500 V mA (--)1.0 A When mounted on ceramic substrate (600mm2×0.8mm) 0.5 W When mounted on ceramic substrate (600mm2×0.8mm) 0.55 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7022A-011 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 0 to 0.02 1 2 ET TL 3 0.65 Marking LOT No. 0.3 Electrical Connection 0.85 0.25 Packing Type : TL LOT No. 0.07 MCH6545-TL-E 0.15 2.1 1.6 0.25 2.0 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 6 5 4 MCPH6 Semiconductor Components Industries, LLC, 2013 September, 2013 6 5 4 1 2 3 92612 TKIM/72606/32406EA MSIM TB-00002174 No.8953-1/8 MCH6545 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A hFE fT VCE=(--)2V, IC=(--)10mA Gain-Bandwidth Product VCE=(--)10V, IC=(--)50mA (690)500 Output Capacitance Cob (3.8)2.8 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)100mA, IB=(--)10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time (200)300 IC=(--)10μA, IE=0A V(BR)EBO ton tstg tf See specified Test Circuit. (--)100 nA (--)100 nA (500)700 IC=(--)100mA, IB=(--)10mA V(BR)CBO V(BR)CEO Unit max MHz pF (--60)50 (--120)100 (--)0.9 (--)1.2 mV V (--50)60 V IC=(--)1mA, RBE=∞ (--)50 V IE=(--)10μA, IC=0A (--)5 V (30)30 ns (170)340 ns (30)55 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + 220μF + 470μF VBE= --5V VCC=25V IC=20IB1= --20IB2=200mA For PNP, the polarity is reversed. Ordering Information memo 3,000pcs./reel Pb Free [PNP] --10m --5mA --300 --250 --2mA --200 --1mA --150 --500μA --100 --200μA --50 0 0 450 A 400 350 300 A 1 5mA A [NPN] 7mA 8mA A 10m 20m --15m IC -- VCE 500 5mA 3mA 30mA A A mA 0m -25m --20 --3 - A --40 m A --350 --50m Collector Current, IC -- mA --400 Shipping MCPH6 IC -- VCE --500 --450 Package Collector Current, IC -- mA Device MCH6545-TL-E 2mA 250 1mA 200 600μA 150 200μA 100 50 IB=0μA --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05118 0 0 IB=0μA 100 200 300 400 500 600 700 800 Collector-to-Emitter Voltage, VCE -- mV 900 1000 IT05106 No.8953-2/8 MCH6545 IC -- VBE --600 [PNP] IC -- VBE 600 [NPN] VCE= --2V VCE=2V 500 Collector Current, IC -- mA Ta=75 °C 25°C --25°C --300 --200 400 300 200 --100 100 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 [PNP] 100 7 5 2 5 7 --10 3 2 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC 3 10 1.0 5 7--1000 IT05120 VCE=2V 100 3 3 [NPN] 2 5 2 2 3 5 7 10 2 3 5 7 100 2 VCE(sat) -- IC 3 [NPN] IC / IB=10 °C 75 5 = Ta 25° 3 C C 5° --2 2 100 75 °C 7 5 Ta = 7 2 3 25 °C 2 --2 5° C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --100 5 7 1000 IT05108 IC / IB=10 2 3 Collector Current, IC -- mA [PNP] 1.2 IT05107 3 7 3 --1.0 1.0 25°C --25°C 5 2 0.8 Ta=75°C 7 DC Current Gain, hFE 3 0.6 hFE -- IC 1000 VCE= --2V Ta=75°C 25°C --25°C 0.4 Base-to-Emitter Voltage, VBE -- V 7 5 0.2 IT05119 hFE -- IC 1000 DC Current Gain, hFE C 25°C --25°C --400 Ta=7 5° Collector Current, IC -- mA --500 10 7 2 3 7 --10 2 3 5 7 --100 2 3 5 Collector Current, IC -- mA IT05410 VCE(sat) -- IC [PNP] 5 3 2 --100 7 5°C 7 Ta= 5 3 5°C --2 25°C 2 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05123 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 3 IC / IB=20 7 --10 7 --1.0 5 1.0 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 5 5 7 1000 IT05411 VCE(sat) -- IC [NPN] IC / IB=20 2 100 7 °C 5 25 Ta =7 5° --2 C 5° C --10 --1.0 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05109 No.8953-3/8 MCH6545 VCE(sat) -- IC 3 [PNP] --1000 7 5 3 2 5°C --100 7 Ta= 7 5 --25 °C 25°C 3 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 VBE(sat) -- IC 2 75°C 25°C 5 3 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB 3 2 3 5 7 2 --10 5 3 Collector-to-Base Voltage, VCB -- V f T -- IC --100 IT05122 3 2 3 5 7 --10 2 3 3 5 7 10 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05121 2 3 5 7 100 2 5 7 1000 3 IT05110 VBE(sat) -- IC [NPN] IC / IB=20 5 3 2 25°C 1.0 Ta= --25°C 7 75°C 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05111 Cob -- VCB [NPN] 7 5 3 2 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V [PNP] VCE= --10V 5 2 2 1.0 1.0 7 7 100 --1.0 2 f=1MHz fT -- IC 1000 7 100 IT05112 [NPN] VCE=10V Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, f T -- MHz 1000 C 3 10 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 5° --2 Collector Current, IC -- mA [PNP] 7 2 5 0.1 1.0 f=1MHz 1.0 --1.0 °C 25 7 = Ta 7 5 7--1000 IT05125 Collector Current, IC -- mA 10 °C 75 100 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Ta= --25°C 2 2 [PNP] --1.0 2 --1.0 3 Collector Current, IC -- mA IC / IB=20 7 5 10 1.0 5 7--1000 IT05124 Collector Current, IC -- mA [NPN] IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 VCE(sat) -- IC 1000 IC / IB=50 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05113 No.8953-4/8 MCH6545 Ron -- IB 100 7 5 1kΩ ON Resistance, Ron -- Ω 2 IB 10 7 5 Ron -- IB 3 2 1.0 7 5 [NPN] 1kΩ f=1MHz OUT IN 1kΩ 3 2 IB 10 7 5 3 2 1.0 7 5 3 3 2 2 0.1 --0.1 0.1 0.1 2 3 5 7 2 --1.0 3 Base Current, IB -- mA PD -- Ta 0.6 Allowable Power Dissipation, PD -- W 100 7 5 OUT IN 3 ON Resistance, Ron -- Ω [PNP] 1kΩ f=1MHz 5 7 --10 IT06093 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06092 [PNP/NPN] Mounted on a ceramic board (600mm2✕0.8mm) 0.55 0.5 0.4 To t 0.3 1u al ni di t ss ip at io n 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10744 No.8953-5/8 MCH6545 Embossed Taping Specification MCH6545-TL-E No.8953-6/8 MCH6545 Outline Drawing MCH6545-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.8953-7/8 MCH6545 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.8953-8/8