MJ11016G

MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt • Resistor Junction Temperature to + 200_C http://onsemi.com 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 − 120 VOLTS, 200 WATTS NPN MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage PNP COLLECTOR CASE COLLECTOR CASE Symbol MJ11012 MJ11015/6 MJ11012 MJ11015/6 Emitter−Base Voltage Collector Current VCEO VCB Value Unit Vdc 60 120 60 120 VEB 5 Vdc IC 30 Adc IB 1 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C PD 200 1.15 W W/°C TJ, Tstg −55 to + 200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.87 °C/W TL 275 °C THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes for ≤ 10 Seconds EMITTER 2 MJ11016 MJ11012 Vdc Base Current Operating Storage Junction Temperature Range BASE 1 BASE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. EMITTER 2 MJ11015 MARKING DIAGRAM 1 2 TO−204AA (TO−3) CASE 1−07 STYLE 1 MJ1101x = Device Code x = 2, 5 or 6 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin MJ1101xG AYYWW MEX ORDERING INFORMATION Device MJ11012 MJ11012G MJ11015 MJ11015G MJ11016 MJ11016G Package Shipping TO−3 100 Units/Tray TO−3 (Pb−Free) 100 Units/Tray TO−3 100 Units/Tray TO−3 (Pb−Free) 100 Units/Tray TO−3 100 Units/Tray TO−3 (Pb−Free) 100 Units/Tray Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 5 1 Publication Order Number: MJ11012/D MJ11015 (PNP); MJ11012, MJ11016 (NPN) COLLECTOR PNP MJ11015 BASE COLLECTOR NPN MJ11012 MJ11016 BASE ≈ 8.0 k ≈ 40 ≈ 8.0 k EMITTER ≈ 40 EMITTER Figure 1. Darlington Circuit Schematic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.) Characteristics Symbol Min Max 60 120 − − − − − − 1 1 5 5 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector−Emitter Leakage Current (VCE = 60 Vdc, RBE = 1k ohm) (VCE = 120 Vdc, RBE = 1k ohm) (VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C) (VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C) MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 MJ11012 MJ11015, MJ11016 V(BR)CEO ICER Vdc mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 5 mAdc Collector−Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO − 1 mAdc 1000 200 − − − − 3 4 − − 3.5 5 4 − ON CHARACTERISTICS(1) DC Current Gain (IC = 20 Adc,VCE = 5 Vdc) (IC = 30 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) (IC = 30 Adc, IB = 300 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 20 A, IB = 200 mAdc) (IC = 30 A, IB = 300 mAdc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 10 A, VCE = 3 Vdc, f = 1 MHz) hfe (1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%. http://onsemi.com 2 MHz hFE, DC CURRENT GAIN 30 k 20 k hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZED MJ11015 (PNP); MJ11012, MJ11016 (NPN) PNP MJ11015 NPN MJ11012, MJ11016 10 k 7k 5k 3k 2k 700 500 VCE = 5 Vdc TJ = 25°C 300 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 20 30 2 1 0.5 0.2 0.1 0.05 PNP MJ11015 NPN MJ11012, MJ11016 0.02 0.01 VCE = 3 Vdc IC = 10 mAdc TJ = 25°C 0.005 10 20 Figure 2. DC Current Gain (1) IC, COLLECTOR CURRENT (AMP) 4 V, VOLTAGE (VOLTS) 500 700 1.0 k 50 PNP MJ11015 NPN MJ11012, MJ11016 TJ = 25°C IC/IB = 100 2 VBE(sat) VCE(sat) 1 0 0.1 50 70 100 200 300 f, FREQUENCY (kHz) Figure 3. Small−Signal Current Gain 5 3 30 0.2 0.5 1 2 5 10 20 50 100 20 10 5 2 1 0.5 0.2 0.1 0.05 BONDING WIRE LIMITATION THERMAL LIMITATION @ TC = 25°C SECOND BREAKDOWN LIMITATION MJ11012 0.02 0.01 MJ11015, MJ11016 2 IC, COLLECTOR CURRENT (AMP) 3 5 7 10 20 30 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. “On” Voltages (1) Figure 5. Active Region DC Safe Operating Area At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z DATE 05/18/1988 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR STYLE 2: PIN 1. BASE 2. COLLECTOR CASE: EMITTER STYLE 3: PIN 1. GATE 2. SOURCE CASE: DRAIN STYLE 4: PIN 1. GROUND 2. INPUT CASE: OUTPUT STYLE 6: PIN 1. GATE 2. EMITTER CASE: COLLECTOR STYLE 7: PIN 1. ANODE 2. OPEN CASE: CATHODE STYLE 8: PIN 1. CATHODE #1 2. CATHODE #2 CASE: ANODE STYLE 9: PIN 1. ANODE #1 2. ANODE #2 CASE: CATHODE STYLE 5: PIN 1. CATHODE 2. EXTERNAL TRIP/DELAY CASE: ANODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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