MJ15023G

MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. http://onsemi.com Features • • • • High Safe Operating Area High DC Current Gain Complementary to MJ15022 (NPN), MJ15024 (NPN) These Devices are Pb−Free and are RoHS Compliant* 16 AMPERES SILICON POWER TRANSISTORS 200 − 250 VOLTS, 250 WATTS COLLECTOR CASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJ15023 MJ15025 VCEO Collector−Base Voltage MJ15023 MJ15025 VCBO Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage VCEX 400 Vdc IC 16 Adc ICM 30 Adc Base Current − Continuous IB 5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 250 1.43 W W/_C −65 to +200 _C Collector Current − Continuous (Note 1) Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range Vdc 1 BASE 200 250 Vdc 2 EMITTER 350 400 TJ, Tstg CASE 1 2 TO−204 (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. MJ1502xG AYWW MEX THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W MJ1502x = Device Code x = 3 or 5 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 12 1 Device Package Shipping MJ15023G TO−204 (Pb−Free) 100 Units / Tray MJ15025G TO−204 (Pb−Free) 100 Units / Tray Publication Order Number: MJ15023/D MJ15023 (PNP), MJ15025 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0) MJ15023 MJ15025 − 200 250 Collector Cutoff Current (VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15023 (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15025 ICEX Collector Cutoff Current (VCE = 150 Vdc, IB = 0) MJ15023 (VCE = 200 Vdc, IB = 0) MJ15025 ICEO Emitter Cutoff Current (VCE = 5 Vdc, IB = 0) Both IEBO − − mAdc − 250 − 250 mAdc − 500 − 500 mAdc − 500 5 2 − − 15 5 60 − − − 1.4 4.0 − 2.2 4 − − 600 SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 0.5 s (non−repetitive)) (VCE = 80 Vdc, t = 0.5 s (non−repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Base−Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob pF 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) 100 50 TC = 25°C 20 10 5.0 1.0 BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.2 0.1 0.1 0.2 20 0.5 10 50 100 250 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1k Figure 1. Active−Region Safe Operating Area http://onsemi.com 2 MJ15023 (PNP), MJ15025 (PNP) 4000 3000 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS Cib C, CAPACITANCE (pF) TJ = 25°C 1000 500 Cob 100 0.3 0.5 1.0 5.0 10 30 50 100 300 TJ = 25°C VCE = 10 V fTest = 1 MHz 9 8 7 6 5 4 3 2 1 0 0.1 2.0 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) 5.0 10 Figure 3. Current−Gain − Bandwidth Product Figure 2. Capacitances 200 TJ = 100°C VCE = 4.0 V 1.8 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 100 TJ = 25°C 50 20 10 1.4 1.0 TJ = 25°C VBE(on) @ VCE = 4.0 V 0.8 5.0 100°C 25°C 0.2 2.0 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 0 20 Figure 4. DC Current Gain VCE(sat) @ IC/IB = 10 100°C 0.1 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 5. “On” Voltages http://onsemi.com 3 5.0 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z DATE 05/18/1988 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR STYLE 2: PIN 1. BASE 2. COLLECTOR CASE: EMITTER STYLE 3: PIN 1. GATE 2. SOURCE CASE: DRAIN STYLE 4: PIN 1. GROUND 2. INPUT CASE: OUTPUT STYLE 6: PIN 1. GATE 2. EMITTER CASE: COLLECTOR STYLE 7: PIN 1. ANODE 2. OPEN CASE: CATHODE STYLE 8: PIN 1. CATHODE #1 2. CATHODE #2 CASE: ANODE STYLE 9: PIN 1. ANODE #1 2. ANODE #2 CASE: CATHODE STYLE 5: PIN 1. CATHODE 2. 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