MJE2955T

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector−Base Voltage VCB 70 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc 75 0.6 W W/°C −55 to +150 °C Collector−Emitter Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C PD (Note 1) Operating and Storage Junction Temperature Range TJ, Tstg www.onsemi.com PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. EMITTER 3 4 TO−220 CASE 221A−09 STYLE 1 1 2 3 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 1.67 °C/W MARKING DIAGRAM MJExx55TG AY WW MJExx55T = Device Code xx = 29 or 30 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Package Shipping MJE2955TG Device TO−220 (Pb−Free) 50 Units / Rail MJE3055TG TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 12 1 Publication Order Number: MJE2955T/D MJE2955T (PNP), MJE3055T (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 60 − − 700 − − 1.0 5.0 − − 1.0 10 − 5.0 20 5.0 100 − − − 1.1 8.0 − 1.8 2.0 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C) ICEX Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150°C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 2) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Base−Emitter On Voltage (Note 2) (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 20%. www.onsemi.com 2 MJE2955T (PNP), MJE3055T (NPN) 10 7.0 5.0 IC, COLLECTOR CURRENT (AMP) 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 150°C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 1.0ms dc 3.0 2.0 1.0 0.7 0.5 TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25°C (D = 0.1) 0.3 0.2 0.1 5.0 20 30 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 60 Figure 1. Active−Region Safe Operating Area 500 90 VCE = 2.0 V PD, POWER DISSIPATION (WATTS) hFE, DC CURRENT GAIN 300 200 TJ = 150°C 100 25°C 50 -55°C 30 20 10 5.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 80 70 60 50 30 20 10 0 10 MJE3055T MJE2955T 40 0 125 50 75 100 TC, CASE TEMPERATURE (°C) 25 Figure 2. DC Current Gain 150 175 5.0 10 Figure 3. Power Derating MJE2955T MJE3055T 2.0 1.4 TJ = 25°C 1.2 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 3.0 V 0.4 1.0 0.8 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.1 VBE(sat) @ IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 0 0.1 10 Figure 4. “On” Voltages www.onsemi.com 3 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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