MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
• High Current Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
60
Vdc
Collector−Base Voltage
VCB
70
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
75
0.6
W
W/°C
−55 to +150
°C
Collector−Emitter Voltage
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
(Note 1)
Operating and Storage Junction
Temperature Range
TJ, Tstg
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PNP
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
1
BASE
1
BASE
EMITTER 3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
EMITTER 3
4
TO−220
CASE 221A−09
STYLE 1
1
2
3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
1.67
°C/W
MARKING DIAGRAM
MJExx55TG
AY WW
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Package
Shipping
MJE2955TG
Device
TO−220
(Pb−Free)
50 Units / Rail
MJE3055TG
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1
Publication Order Number:
MJE2955T/D
MJE2955T (PNP), MJE3055T (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
60
−
−
700
−
−
1.0
5.0
−
−
1.0
10
−
5.0
20
5.0
100
−
−
−
1.1
8.0
−
1.8
2.0
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150°C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Base−Emitter On Voltage (Note 2)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 20%.
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2
MJE2955T (PNP), MJE3055T (NPN)
10
7.0
5.0
IC, COLLECTOR CURRENT (AMP)
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
100ms
1.0ms
dc
3.0
2.0
1.0
0.7
0.5
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
0.3
0.2
0.1
5.0
20
30
7.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50 60
Figure 1. Active−Region Safe Operating Area
500
90
VCE = 2.0 V
PD, POWER DISSIPATION (WATTS)
hFE, DC CURRENT GAIN
300
200
TJ = 150°C
100
25°C
50
-55°C
30
20
10
5.0
0.01
0.02
0.05 0.1
0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
80
70
60
50
30
20
10
0
10
MJE3055T
MJE2955T
40
0
125
50
75
100
TC, CASE TEMPERATURE (°C)
25
Figure 2. DC Current Gain
150
175
5.0
10
Figure 3. Power Derating
MJE2955T
MJE3055T
2.0
1.4
TJ = 25°C
1.2
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
0.4
1.0
0.8
0.6
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0
0.1
VBE(sat) @ IC/IB = 10
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0
0
0.1
10
Figure 4. “On” Voltages
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3
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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