MJF122, MJF127
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
http://onsemi.com
COMPLEMENTARY SILICON
POWER DARLINGTONS
5.0 A, 100 V, 30 W
Features
•
•
•
•
•
•
•
•
Electrically Similar to the Popular TIP122 and TIP127
100 VCEO(sus)
5.0 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain − 2000 (Min) @ IC = 3 Adc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Pb−Free Packages are Available*
NPN
BASE
1
BASE
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
EMITTER 3
MJF122
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
VISOL
4500
VRMS
Collector Current − Continuous
Peak
IC
5
8
Adc
Base Current
IB
0.12
Adc
Total Power Dissipation (Note 2)
@ TC = 25_C
Derate above 25_C
PD
30
0.24
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2
0.016
W
W/_C
TJ, Tstg
−65 to
+ 150
IC
Collector−Emitter Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H. ≤ 30%, TA = 25°C)
Per Figure 14
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Thermal Resistance, Junction−to−Case
(Note 2)
RqJC
4.1
_C/W
Lead Temperature for Soldering Purpose
TL
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
mounting surface (in a location beneath the die), the device mounted on a
heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 7
PNP
COLLECTOR 2
COLLECTOR 2
1
EMITTER 3
MJF127
MARKING
DIAGRAM
TO−220
CASE 221D−02
STYLE 2
1
2
x
G
A
Y
WW
3
MJF12xG
AYWW
= 2 or 7
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
MJF122
MJF122G
MJF127
MJF127G
Package
Shipping†
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJF122/D
MJF122, MJF127
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
−
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
−
10
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
−
2
mAdc
hFE
1000
2000
−
−
−
Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)
Collector−Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)
VCE(sat)
−
−
2
3.5
Vdc
Base−Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)
VBE(on)
−
2.5
Vdc
hfe
4
−
−
Cob
−
−
300
200
pF
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)
DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJF127
MJF122
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
t, TIME (s)
μ
RB
51
0
V1
APPROX.
-12 V
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
D1
≈8 k
2
SCOPE
TUT
V2
APPROX.
+8 V
ts
3
VCC
- 30 V
≈120
0.3
0.2
+4 V
0.1
0.07
0.05
0.1
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
tf
1
0.7
0.5
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
td @ VBE(off) = 0 V
PNP
NPN
0.5 0.7 1
2
3
0.3
IC, COLLECTOR CURRENT (AMP)
5
Figure 2. Typical Switching Times
Figure 1. Switching Times Test Circuit
http://onsemi.com
2
7
10
MJF122, MJF127
PD, POWER DISSIPATION (WATTS)
TA TC
4 80
3 60
TC
2 40
TA
1 20
0
0
40
20
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 3. Maximum Power Derating
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.5
0.3
0.2
0.1
SINGLE PULSE
RqJC(t) = r(t) RqJC
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
5
3
10
20 30
50
t, TIME (ms)
100
200 300
500
1K
2K 3K
5K
10K
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
100 ms
5
3
1ms
TJ = 150°C
2
d
c
5 ms
1
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
TC = 25°C (SINGLE PULSE)
0.5
0.3
0.2
0.1
1
5
20 30
2
3
10
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
3
MJF122, MJF127
300
5000
3000
2000
200
TJ = 25°C
C, CAPACITANCE (pF)
hfe , SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
100
50
30
20
10
Cob
100
Cib
70
50
PNP
NPN
PNP
NPN
1
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
30
0.1
500 1000
0.2
0.5
1
2
5
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Small−Signal Current Gain
PNP
MJF127
20,000
20,000
VCE = 4 V
VCE = 4 V
10,000
5000
hFE , DC CURRENT GAIN
10,000
hFE , DC CURRENT GAIN
100
Figure 7. Typical Capacitance
NPN
MJF122
TJ = 150°C
3000
2000
25°C
1000
-55°C
500
300
200
50
0.1
0.2
0.5 0.7
0.3
2
1
3
5
7
7000
5000
2000
1000
700
500
300
200
0.1
10
TJ = 150°C
3000
25°C
-55°C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical DC Current Gain
3
TJ = 25°C
2.6
IC = 2 A
4A
6A
2.2
1.8
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
3
TJ = 25°C
2.6
IC = 2 A
6A
4A
2.2
1.8
1.4
1
0.3
0.5 0.7
1
2
3
5
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Typical Collector Saturation Region
http://onsemi.com
4
7
10
20
30
MJF122, MJF127
NPN
MJF122
PNP
MJF127
3
3
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
1
0.5
0.1
2
1.5
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
1
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.2 0.3
0.5 0.7
2
1
3
5
7
0.1
10
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1
2
3
5
7
10
7
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. Typical “On” Voltages
+5
+4
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENT (mV°C)
+5
*IC/IB ≤ hFE 3
+3
25°C to 150°C
+2
- 55°C to 25°C
+1
0
-1
*qVC FOR VCE(sat)
-2
-3
-4
-5
0.1
25°C to 150°C
- 55°C to 25°C
qVB FOR VBE
0.2 0.3
0.5
0.7
1
2
3
5
7
10
+4
*IC/IB ≤ hFE 3
+3
25°C to 150°C
+2
+1
0
-1
*qVC FOR VCE(sat)
-2
- 55°C to 25°C
-3
qVB FOR VBE
-4
-5
0.1
IC, COLLECTOR CURRENT (AMP)
- 55°C to 25°C
25°C to 150°C
0.2 0.3
0.5
1
2 3
IC, COLLECTOR CURRENT (AMP)
5
Figure 11. Typical Temperature Coefficients
105
105
FORWARD
REVERSE
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
REVERSE
104
VCE = 30 V
103
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 - 0.4 -0.2
0
+0.2
+0.4 +0.6 +0.8
+1
VCE = 30 V
103
102
TJ = 150°C
101
100°C
100
10-1
+1.2 +1.4
FORWARD
104
25°C
+0.6 +0.4 +0.2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
-0.2 -0.4 -0.6 -0.8
-1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Typical Collector Cut−Off Region
http://onsemi.com
5
-1.2 -1.4
MJF122, MJF127
NPN
MJF122
PNP
MJF127
COLLECTOR
BASE
COLLECTOR
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 13. Darlington Schematic
TEST CONDITIONS FOR ISOLATION TESTS*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 14. Mounting Position
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 15. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend
exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
http://onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
C
S
Q
SCALE 1:1
SEATING
PLANE
U
1 2 3
−Y−
K
G
N
L
D
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. CATHODE
STYLE 5:
PIN 1. CATHODE
2. ANODE
3. GATE
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DESCRIPTION:
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
MARKING
DIAGRAMS
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. MT 1
2. MT 2
3. GATE
xxxxxx
G
A
Y
WW
DOCUMENT NUMBER:
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
H
DATE 27 FEB 2009
98ASB42514B
TO−220 FULLPAK
xxxxxxG
AYWW
AYWW
xxxxxxG
AKA
Bipolar
Rectifier
= Specific Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
A
Y
WW
xxxxxx
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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