MJL0302AG

MJL0281A (NPN) MJL0302A (PNP) Preferred Devices Complementary NPN−PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJL3281A and MJL1302A audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features • • • • • • Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 3.0 A Excellent Gain Linearity High BVCEO High Frequency Pb−Free Packages are Available* http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS − 180 WATTS TO−264 CASE 340G STYLE 2 Benefits • • • • • Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwith MARKING DIAGRAM Applications MJL0xxxA AYYWWG • High−End Consumer Audio Products • ♦ ♦ Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) 2 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc IC 15 30 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C PD 180 Watts TJ, Tstg −  65 to +150 °C Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range 3 EMITTER 1 BASE MJL0xxxA = Device Code xxx = 281 or 302 A = Location Code YY = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device MJL0281A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. MJL0281AG MJL0302A MJL0302AG Package Shipping TO−264 25 Units/Rail TO−264 (Pb−Free) 25 Units/Rail TO−264 25 Units/Rail TO−264 (Pb−Free) 25 Units/Rail Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 1 1 Publication Order Number: MJL0281A/D MJL0281A (NPN) MJL0302A (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Value Unit RqJC 0.69 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 260 − V Collector Cutoff Current (VCB = 260 V, IE = 0) ICBO − 10 mA Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 5.0 mA 75 75 75 150 150 150 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS hFE DC Current Gain (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) (IC = 3.0 A, VCE = 5.0 V) − Collector−Emitter Saturation Voltage (IC = 5.0 A, IB = 0.5 A) VCE(sat) − 1.0 V Base−Emitter On Voltage (IC = 5.0 A, VCE = 5.0 V) VBE(on) − 1.2 V fT 30 − MHz Cob − 400 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, ftest = 1.0 MHz) 100 180 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 200 160 140 120 100 80 60 40 20 0 1.0 ms 10 5.0 ms 10 ms 100 ms 1 DC 0.1 0.01 0 20 40 60 80 100 120 140 1 160 TC, CASE TEMPERATURE (°C) 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Power Derating Figure 2. Safe Operating Area http://onsemi.com 2 1000 MJL0281A (NPN) MJL0302A (PNP) 500 500 hFE, DC CURRENT GAIN VCE = 5.0 V 100°C 100 −25°C 25°C 10 0.05 0.1 1 10 VBE(on), BASE−EMITTER VOLTAGE (V) −25°C 25°C 1 10 IC, COLLECTOR CURRENT (A) Figure 3. MJL0281A DC Current Gain Figure 4. MJL0302A DC Current Gain VCE = 5.0 V 1.2 1 −25°C 0.8 25°C 100°C 0.4 0.2 0 0.01 0.1 1 10 100 50 2.4 VCE = 5.0 V 1.9 1.4 0.9 −25°C 100°C 0.4 25°C −0.1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. MJL0281A Base−Emitter Voltage Figure 6. MJL0302A Base−Emitter Voltage 100 10 10 IC/IB= 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) 1.4 0.6 100°C 10 0.05 0.1 50 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5.0 V 1 100°C 25°C 0.1 0.01 0.01 −25°C 0.1 1 10 100 IC/IB= 10 1 100°C 0.1 0.01 0.01 25°C −25°C IC, COLLECTOR CURRENT (A) 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. MJL0281A Saturation Voltage Figure 8. MJL0302A Saturation Voltage http://onsemi.com 3 100 MJL0281A (NPN) MJL0302A (PNP) 70 VCE= 5.0 V fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 60 50 40 30 20 25°C 10 0 0.01 0.1 1 10 60 VCE= 5.0 V 50 40 30 20 25°C 10 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. MJL0281A Current Gain Bandwidth Product Figure 10. MJL0302A Current Gain Bandwidth Product PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC) http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J DATE 17 DEC 2004 SCALE 1:2 Q 0.25 (0.010) −B− M T B −T− M C E U N A R 1 2 L 3 P F 2 PL K W G J H D 3 PL 0.25 (0.010) STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER M T B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W S STYLE 3: PIN 1. GATE 2. SOURCE 3. DRAIN MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 GENERIC MARKING DIAGRAM* STYLE 4: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER XXXXXX AYYWW XXXXXX A YY WW = Specific Device Code = Location Code = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42780B TO−3BPL (TO−264) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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