MMBT2907A-D87Z

Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require 200 MHz (Minimum) up to 500 mA. Offered in an ultra-small surface-mount • Maximum Turn-On Time (ton): 45 ns package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types • Maximum Turn-Off Time (toff): 100 ns are the PN2222A, MMBT2222A, and PZT2222A; • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) respectively. • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): Applications • General-Purpose Amplifier • Switch MMBT2907A PN2907A PZT2907A C C E E TO-92 SOT-23 Mark:2F EBC C SOT-223 B B Ordering Information Part Number Top Mark Package Packing Method PN2907ABU 2907A TO-92 3L Bulk PN2907ATF 2907A TO-92 3L Tape and Reel PN2907ATFR 2907A TO-92 3L Tape and Reel PN2907ATA 2907A TO-92 3L Ammo PN2907ATAR 2907A TO-92 3L Ammo MMBT2907A 2F SOT-23 3L Tape and Reel MMBT2907A-D87Z 2F SOT-23 3L Tape and Reel PZT2907A 2907A SOT-223 4L Tape and Reel © 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: PZT2907A/D PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V -800 mA -55 to +150 °C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter Unit PN2907A(4) MMBT2907A(3) PZT2907A(4) Total Device Dissipation 625 350 1000 mW Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 357 125 PD °C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 4. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2 °C/W PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 IC = -10 μA, IE = 0 V(BR)CBO Collector-Base Breakdown Voltage -60 V -60 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICBO Collector Cut-Off Current V(BR)EBO IBL VCB = -50 V, IE = 0 -0.02 VCB = -50 V, IE = 0, TA = 150°C -20 μA On Characteristics IC = -0.1 mA, VCE = -10 V hFE DC Current Gain IC = -1.0 mA, VCE = -10 V 100 IC = -10 mA, VCE = -10 V 100 IC = -150 mA, VCE = -10 V(5) 100 V(5) 50 IC = -500 mA, VCE = -10 VCE(sat) Collector-Emitter Saturation Voltage(5) VBE(sat) Base-Emitter Saturation Voltage 75 300 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -1.6 IC = -150 mA, IB = -15 mA(5) -1.3 IC = -500 mA, IB = -50 mA -2.6 V V Small Signal Characteristics Current Gain - Bandwidth Product IC = -50 mA, VCE = -20 V, f = 100 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 100 kHz 8.0 pF Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 30 pF 45 ns 10 ns 40 ns 100 ns 80 ns 30 ns fT 200 MHz Switching Characteristics ton Turn-On Time td Delay Time tr Rise Time toff Turn-Off Time ts Storage Time tf Fall Time VCC = -30 V, IC = -150 mA, IB1 = -15 mA VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15mA Notes: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Electrical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) VCE = 5V 400 125 °C 300 0.3 25 °C 200 100 0.3 0.1 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 0 125 °C - 40 °C 1 1 25 °C 0.4 125 °C β = 10 125 °C VCE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0.1 25 20 100 CAPACITANCE (pF) V CB = 35V 10 1 0.1 0.01 25 1 10 I C - COLLECTOR CURRE NT (mA) Figure 4. Base-Emitter On Voltage vs. Collector Current Figure 3. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLE CTOR CURRENT (nA) - 40 °C 0.6 25 °C 0 500 1 0.8 - 40 °C 0.8 0.6 10 100 I C - COLLECTOR CURRE NT (mA) Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current 0.4 25 °C 0.2 - 40 °C 0 0.1 V BESAT - BASE EMITTER VOLTAGE (V) β = 10 0.4 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.5 500 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) Figure 5. Collector Cut-Off Current vs. Ambient Temperature 16 12 4 0 0.1 125 C ib 8 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 Figure 6. Input and Output Capacitance vs. Reverse Bias Voltage www.onsemi.com 4 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Typical Performance Characteristics 250 I B1 = I B2 = I B1 = I B2 = 10 400 V cc = 15 V ts 150 TIME (nS) TIME (nS) 200 500 Ic 100 tr tf V cc = 15 V 300 200 t off 100 50 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 8. Turn-On and Turn-Off Times vs. Collector Current Figure 7. Switching Times vs. Collector Current 1 50 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) Ic 10 20 SOT-223 0.75 10 t r = 15 V 5 30 ns TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 TEMPERATURE ( oC) 125 Figure 10. Power Dissipation vs. Ambient Temperature Figure 9. Rise Time vs. Collector and Turn-On Base Currents www.onsemi.com 5 150 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Typical Performance Characteristics (Continued) hoe 2 h re h fe 1 0.5 h ie 0.2 0.1_ V CE = -10 V T A = 25 oC _ 1 _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 CHAR. RELATIVE TO VALUES AT TA = 25oC Figure 11. Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 CHAR. RELATIVE TO VALUES AT VCE = -10V CHAR. RELATIVE TO VALUES AT I C= -10mA 5 1.3 1.2 1.1 1 h ie 0.9 h fe 0.8 -4 h fe h ie h re hoe 1 0.8 0.7 h re h ie 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) I C = -10mA T A = 25oC -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 Figure 12. Common Emitter Characteristics 1.1 hoe 0.9 h re and hoe h re h ie h fe hoe 100 Figure 13. Common Emitter Characteristics www.onsemi.com 6 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Typical Performance Characteristics (f = 1.0 kHz) TO-92 (Bulk) D Figure 14. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions TO-92 (Tape and Reel, Ammo) Figure 15. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions (Continued) SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 16. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 9 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions (Continued) SOT-223 Figure 17. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 10 PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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