MMBTA56LT1

MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage −60 −80 VCBO MMBTA55 MMBTA56 Emitter −Base Voltage Collector Current − Continuous 2 EMITTER Vdc Vdc 3 −60 −80 VEBO −4.0 Vdc IC −500 mAdc 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C SOT−23 CASE 318 STYLE 6 PD RqJA MARKING DIAGRAM PD Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 2xx M G G 1 2xx = Device Code x = H for MMBTA55LT1 xx = GM for MMBTA56LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBTA55LT1/D MMBTA55LT1, MMBTA56LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −60 −80 − − −4.0 − − −0.1 − − −0.1 −0.1 100 100 − − − −0.25 − −1.2 50 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Vdc MMBTA55 MMBTA56 Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = −60 Vdc, IB = 0) Vdc mAdc ICES Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) mAdc ICBO MMBTA55 MMBTA56 ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) VCE(sat) Base −Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) fT MHz 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN−ON TIME 5.0 ms +40 V 100 VCC +VBB +40 V RL 100 RL OUTPUT +10 V Vin 0 TURN−OFF TIME VCC −1.0 V tr = 3.0 ns OUTPUT RB * CS t 6.0 pF 5.0 mF RB Vin * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz MMBTA55LT1, MMBTA56LT1 200 100 VCE = −2.0 V TJ = 25°C TJ = 25°C 70 C, CAPACITANCE (pF) 50 100 70 50 30 Cibo 30 20 Cobo 10 7.0 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) 5.0 −0.1 −0.2 −200 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product 1.0 k 700 500 TJ = 125°C h FE, DC CURRENT GAIN 100 70 50 tf VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 −5.0 −7.0 −10 200 25°C 100 80 60 40 −0.5 −1.0 −2.0 −50 −70 −100 −200 −300 −500 −20 −30 IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time −1.0 −55°C tr td @ VBE(off) = −0.5 V −50 −100 −200 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain TJ = 25°C −0.8 V, VOLTAGE (VOLTS) t, TIME (ns) VCE = −1.0 V ts 200 20 Figure 3. Capacitance 400 300 30 −50 −100 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) Figure 6. “ON” Voltages http://onsemi.com 3 −500 −500 −1.0 R qVB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS MMBTA55LT1, MMBTA56LT1 TJ = 25°C −0.8 IC = −100 mA IC = −50 mA IC = −250 mA IC = −500 mA −0.6 −0.4 −0.2 IC = −10 mA 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −0.8 −1.2 −1.6 RqVB for VBE −2.0 −2.4 −2.8 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Base−Emitter Temperature Coefficient Figure 7. Collector Saturation Region ORDERING INFORMATION Device Order Number Package Type Shipping † SOT−23 3,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 10,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 3,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 10,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA55LT1 MMBTA55LT1G MMBTA55LT3 MMBTA55LT3G MMBTA56LT1 MMBTA56LT1G MMBTA56LT3 MMBTA56LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MMBTA55LT1, MMBTA56LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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