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MMSZ4715T1G

MMSZ4715T1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOD123

  • 描述:

    Zener Diode 36V 500mW ±5% Surface Mount SOD-123

  • 详情介绍
  • 数据手册
  • 价格&库存
MMSZ4715T1G 数据手册
DATA SHEET www.onsemi.com Zener Voltage Regulators MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series SOD−123 CASE 425 STYLE 1 500 mW, Low IZT SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. 1 Cathode 2 Anode Features • • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Low Reverse Current (IZT) − 50 mA Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Total Power Dissipation on FR−5 Board, (Note 1) @ TL = 75°C Derated above 75°C Symbol PD Thermal Resistance, (Note 2) Junction−to−Ambient RqJA Thermal Resistance, (Note 2) Junction−to−Lead RqJL Junction and Storage Temperature Range TJ, Tstg Max Units 500 6.7 mW mW/°C °C/W 340 150 −55 to +150 MARKING DIAGRAM 1 xx M G xx M G G = Device Code (Refer to page 3) = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MMSZ4xxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SZMMSZ4xxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSZ4xxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel SZMMSZ4xxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. °C/W DEVICE MARKING INFORMATION °C See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal Resistance measurement obtained via infrared Scan Method. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2021 − Rev. 13 1 Publication Order Number: MMSZ4678T1/D MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. IR VF IZT Zener Voltage Regulator www.onsemi.com 2 V MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 3) VZ (Volts) Leakage Current @ IZT IR @ VR Device Marking Min Nom Max mA mA Volts MMSZ4678T1G CC 1.71 1.8 1.89 50 7.5 1 MMSZ4679T1G CD 1.90 2.0 2.10 50 5 1 MMSZ4680T1G CE 2.09 2.2 2.31 50 4 1 Device* MMSZ4681T1G CF 2.28 2.4 2.52 50 2 1 MMSZ4682T1G CH 2.565 2.7 2.835 50 1 1 MMSZ4683T1G CJ 2.85 3.0 3.15 50 0.8 1 MMSZ4684T1G CK 3.13 3.3 3.47 50 7.5 1.5 MMSZ4685T1G CM 3.42 3.6 3.78 50 7.5 2 MMSZ4686T1G CN 3.70 3.9 4.10 50 5 2 MMSZ4687T1G CP 4.09 4.3 4.52 50 4 2 SZMMSZ4687T1G CG6 4.09 4.3 4.52 50 4 2 MMSZ4688T1G CT 4.47 4.7 4.94 50 10 3 MMSZ4689T1G CU 4.85 5.1 5.36 50 10 3 MMSZ4690T1G/T3G CV 5.32 5.6 5.88 50 10 4 MMSZ4691T1G CA 5.89 6.2 6.51 50 10 5 MMSZ4692T1G CX 6.46 6.8 7.14 50 10 5.1 MMSZ4693T1G CY 7.13 7.5 7.88 50 10 5.7 MMSZ4694T1G CZ 7.79 8.2 8.61 50 1 6.2 MMSZ4695T1G DC 8.27 8.7 9.14 50 1 6.6 MMSZ4696T1G DD 8.65 9.1 9.56 50 1 6.9 MMSZ4697T1G DE 9.50 10 10.50 50 1 7.6 MMSZ4698T1G DF 10.45 11 11.55 50 0.05 8.4 MMSZ4699T1G DH 11.40 12 12.60 50 0.05 9.1 MMSZ4700T1G DJ 12.35 13 13.65 50 0.05 9.8 MMSZ4701T1G DK 13.30 14 14.70 50 0.05 10.6 MMSZ4702T1G DM 14.25 15 15.75 50 0.05 11.4 MMSZ4703T1G † DN 15.20 16 16.80 50 0.05 12.1 MMSZ4704T1G DP 16.15 17 17.85 50 0.05 12.9 MMSZ4705T1G DT 17.10 18 18.90 50 0.05 13.6 MMSZ4706T1G DU 18.05 19 19.95 50 0.05 14.4 MMSZ4707T1G DV 19.00 20 21.00 50 0.01 15.2 MMSZ4708T1G DA 20.90 22 23.10 50 0.01 16.7 MMSZ4709T1G DX 22.80 24 25.20 50 0.01 18.2 MMSZ4710T1G DY 23.75 25 26.25 50 0.01 19.0 MMSZ4711T1G † EA 25.65 27 28.35 50 0.01 20.4 MMSZ4712T1G EC 26.60 28 29.40 50 0.01 21.2 MMSZ4713T1G ED 28.50 30 31.50 50 0.01 22.8 MMSZ4714T1G EE 31.35 33 34.65 50 0.01 25.0 MMSZ4715T1G EF 34.20 36 37.80 50 0.01 27.3 MMSZ4716T1G EH 37.05 39 40.95 50 0.01 29.6 MMSZ4717T1G EJ 40.85 43 45.15 50 0.01 32.6 3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *Include SZ-prefix devices where applicable. †MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel www.onsemi.com 3 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series 8 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS 7 6 TYPICAL TC VALUES 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 100 TYPICAL TC VALUES VZ @ IZT 10 1 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) Ppk , PEAK SURGE POWER (WATTS) 1000 1.0 PD versus TL 0.8 0.6 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (5C) 125 150 Figure 3. Steady State Power Derating RECTANGULAR WAVEFORM, TA = 25°C 100 10 1 0.1 1 10 PW, PULSE WIDTH (ms) TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IZ = 1 mA 100 5 mA 20 mA 10 1 1 100 1000 Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE ( Ω ) PD, POWER DISSIPATION (WATTS) 1.2 10 VZ, NOMINAL ZENER VOLTAGE Figure 5. Effect of Zener Voltage on Zener Impedance www.onsemi.com 4 100 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series TYPICAL CHARACTERISTICS 1000 TA = 25°C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) I R , LEAKAGE CURRENT ( μA) 1000 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25°C 0.0001 -55°C 0.00001 0 10 Figure 6. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 7. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 9. Zener Voltage versus Zener Current (12 V to 91 V) Figure 8. Zener Voltage versus Zener Current (VZ Up to 12 V) www.onsemi.com 5 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
MMSZ4715T1G
物料型号: - MMSZ4xxxT1G系列 - SZMMSZ4xxxT1G系列

器件简介: - 提供了500mW的功率等级 - 低反向电流(IZT)为50μA - 表面贴装塑料SOD-123封装 - 适用于高密度应用的小尺寸封装 - 符合RoHS标准且无铅

引脚分配: - 阳极:1号引脚 - 阴极:2号引脚,带有极性带标识

参数特性: - 工作温度范围:-55°C至+150°C - 热阻:Junction-to-Ambient为340°C/W,Junction-to-Lead为150°C/W - 总功率耗散在FR-5板上为500mW(在75°C时,之后会降低)

功能详解: - 这些设备提供了一个方便的替代方案,用于无引线34-封装样式 - 设计用于优化自动板组装 - 具有ESD等级3(>16kV)的人体模型 - 带有SZ前缀的设备适用于汽车和其他需要独特场地和控制变更要求的应用

应用信息: - 适用于需要Zener电压调节的应用

封装信息: - SOD-123 (Pb-Free)封装 - 3000/卷或10000/卷的卷带和卷轴包装
MMSZ4715T1G 价格&库存

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MMSZ4715T1G
  •  国内价格
  • 1+1.23373
  • 10+0.71868
  • 100+0.35982
  • 500+0.24747
  • 509+0.20854
  • 1400+0.19716
  • 3000+0.19165

库存:693

MMSZ4715T1G
  •  国内价格 香港价格
  • 3000+0.233093000+0.02892
  • 6000+0.209826000+0.02603
  • 9000+0.197809000+0.02454
  • 15000+0.1841315000+0.02284
  • 21000+0.1759721000+0.02183
  • 30000+0.1679930000+0.02084
  • 75000+0.1502975000+0.01865
  • 150000+0.13924150000+0.01728
  • 300000+0.12988300000+0.01612

库存:22095

MMSZ4715T1G
  •  国内价格 香港价格
  • 3000+0.123493000+0.01532
  • 12000+0.1229112000+0.01525
  • 45000+0.1229145000+0.01525
  • 90000+0.1229190000+0.01525
  • 225000+0.12291225000+0.01525

库存:48000