MPSA62

MPSA62, MPSA63, MPSA64 MPSA64 is a Preferred Device Darlington Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage MPSA62 MPSA63/64 Collector −Base Voltage MPSA62 MPSA63/64 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C mW mW/°C 1 2 3 VCBO −20 −30 −10 −500 Vdc mAdc Symbol VCES −20 −30 Vdc Value Unit Vdc BASE 2 EMITTER 1 MARKING DIAGRAM TO−92 (TO−226AA) CASE 29−11 STYLE 1 MPS A6x AYWWG G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W x = 2, 3, or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 June, 2005 − Rev. 2 Publication Order Number: MPSA62/D MPSA62, MPSA63, MPSA64 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 mAdc, VBE = 0) Collector Cutoff Current (VCB= −15 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0) Emitter Cutoff Current (VEB = −10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) hFE MPSA63 MPSA64 MPSA62 MPSA63 MPSA64 VCE(sat) MPSA62 MPSA63, MPSA64 VBE(on) MPSA62 MPSA63, MPSA64 fT MPSA63, MPSA64 − − 125 −1.4 −2.0 − MHz − − −1.0 −1.5 Vdc 5,000 10,000 20,000 10,000 20,000 − − − − − Vdc − V(BR)CES MPSA62 MPSA63, MPSA64 ICBO MPSA62 MPSA63, MPSA64 IEBO − − − −100 −100 −100 nAdc −20 −30 − − nAdc Vdc Symbol Min Max Unit (IC = −100 mAdc, VCE = −5.0 Vdc) Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.01 mAdc) (IC = −100 mAdc, IB = −0.1 mAdc) Base −Emitter On Voltage (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (Note 2) (IC = −100 mAdc, VCE = −5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2. fT = |hfe| S ftest. ORDERING INFORMATION Device MPSA62 MPSA63 MPSA63G MPSA63RLRA MPSA63RLRAG MPSA63RLRM MPSA63RLRMG MPSA63RLRP MPSA63RLRPG MPSA63ZL1 MPSA63ZL1G MPSA64 MPSA64G MPSA64RLRA MPSA64RLRAG MPSA64RLRM MPSA64RLRMG Package TO−92 TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 5000 Units / Bulk 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSA62, MPSA63, MPSA64 200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 −0.3 25°C VCE = −2.0 V −5.0 V TA = 125°C −10 V −55°C −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS −2.0 TA = 25°C −1.6 V, VOLTAGE (VOLTS) −1.2 VBE(on) @ VCE = −5.0 V −0.8 −0.4 0 −0.3 −0.5 VCE(sat) @ IC/IB = 1000 IC/IB = 100 VBE(sat) @ IC/IB = 100 −2.0 −1.8 −1.6 −1.4 −1.2 −1.0 −0.8 IC = −10 mA −50 mA −100 mA −175 mA TA = 25°C −300 mA −1.0 −2 −3 −5 −10 −20 −30 −50 IC, COLLECTOR CURRENT (mA) −100 −200 −300 −0.6 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100−200−500 −1K−2K −5K−10K IB, BASE CURRENT (mA) Figure 2. “On” Voltage Figure 3. Collector Saturation Region |h FE |, HIGH FREQUENCY CURRENT GAIN 10 4.0 3.0 2.0 1.0 0.4 0.2 0.1 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 −1K VCE = −5.0 V f = 100 MHz TA = 25°C −1000 IC, COLLECTOR CURRENT (mA) 1.0 ms TA = 25°C TC = 25°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA62 MPSA63 −20 −40 −60 −2.0 −4.0 −6.0 −10 100 ms −300 −200 −100 −50 −20 −10 −1.0 1.0 s VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3 MPSA62, MPSA63, MPSA64 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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