MPSA77RLRA

MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES −40 −60 Vdc VEBO −10 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Collector −Emitter Voltage MPSA75 MPSA77 Emitter −Base Voltage Operating and Storage Junction Temperature Range BASE 2 EMITTER 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W www.DataSheet4U.com Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−92 CASE 29−11 STYLE 1 1 2 MPS Axx AYWW G G 3 MPSAxx = Device Code xx = 75 or 77 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package MPSA75RLRA TO−92 2,000/Tape & Reel TO−92 (Pb−Free) 2,000/Tape & Reel TO−92 2,000/Ammo Pack TO−92 (Pb−Free) 2,000/Ammo Pack TO−92 5,000 Units/Box TO−92 (Pb−Free) 5,000 Units/Box TO−92 2,000/Ammo Pack TO−92 (Pb−Free) 2,000/Ammo Pack MPSA75RLRAG MPSA75RLRP MPSA75RLRPG MPSA77 MPSA77G MPSA77RLRA MPSA77RLRAG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Shipping † Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MPSA75/D MPSA75, MPSA77 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 Adc, VBE = 0) MPSA75 MPSA77 V(BR)CES −40 −60 − − − − Vdc Collector −Base Breakdown Voltage (IC = 100 Adc, IE = 0) MPSA75 MPSA77 V(BR)CBO −40 −60 − − − − Vdc Collector Cutoff Current (VCB= −30 V, IE = 0) (VCB = −50 V, IE = 0) MPSA75 MPSA77 − − − − −100 −100 Collector Cutoff Current (VCE = −30 V, VBE = 0) (VCE = −50 V, VBE = 0) MPSA75 MPSA77 − − − − −500 −500 − − −100 10,000 10,000 − − − − VCE(sat) − − −1.5 Vdc VBE − − −2.0 Vdc |hfe| 1.25 2.4 − − ICBO nAdc ICES Emitter Cutoff Current (VEB = −10 Vdc) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −100 mA, VCE = −5.0 V) hFE Collector −Emitter Saturation Voltage (IC = −100 mA, IB = −0.1 mAdc) Base −Emitter On Voltage (IC = −100 mA, VCE = −5.0 Vdc) − SMALL− SIGNAL CHARACTERISTICS Current −Gain − High Frequency (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) http://onsemi.com 2 MPSA75, MPSA77 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 30 −10 V 25°C VCE = −2.0 V −5.0 V 20 10 7.0 5.0 −55°C 3.0 2.0 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS −2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) −1.6 −1.2 VBE(on) @ VCE = −5.0 V −0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 −0.4 0 −0.3 −0.5 −1.0 −2 −3 −5 −10 −20 −30 −50 IC, COLLECTOR CURRENT (mA) −100 −200 −300 −2.0 TA = 25°C −1.8 −1.6 −1.4 IC = −10 mA −50 mA −100 mA −175 mA −1.2 −1.0 −0.8 −0.6 −0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100−200−500 −1K−2K −5K−10K IB, BASE CURRENT (A) Figure 3. Collector Saturation Region −1000 10 VCE = −5.0 V f = 100 MHz TA = 25°C IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN Figure 2. “On” Voltage 4.0 3.0 2.0 −300 mA −300 −200 TA = 25°C 0.4 0.2 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA75 −50 −20 MPSA77 −10 −1.0 −1K 1.0 s TC = 25°C −100 1.0 0.1 −1.0 −2.0 100 s 1.0 ms −2.0 −4.0 −6.0 −10 −20 −40 −60 VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area http://onsemi.com 3 MPSA75, MPSA77 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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