MR750

MR750 SERIES MR754 and MR760 are Preferred Devices High Current Lead Mounted Rectifiers Features • • • • Current Capacity Comparable to Chassis Mounted Rectifiers Very High Surge Capacity Insulated Case Pb−Free Packages are Available* http://onsemi.com Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Lead • • is Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Polarity Band HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50 − 1000 VOLTS DIFFUSED JUNCTION AXIAL LEAD BUTTON CASE 194 STYLE 1 MARKING DIAGRAM MR7xx AYYWWG G MR7 = Device Code xx = 50, 51, 52, 54, 56 or 60 A = Location Code YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 1 March, 2007 − Rev. 6 Publication Order Number: MR750/D MR750 SERIES MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) RMS Reverse Voltage Average Rectified Forward Current (Single phase, resistive load, 60 Hz) (See Figures 5 and 6) Non−Repetitive Peak Surge Current (Surge applied at rated load conditions) Operating and Storage Junction Temperature Range Symbol VRRM VRWM VR VRSM VR(RMS) IO MR750 50 MR751 100 MR752 200 MR754 400 MR756 600 MR760 1000 Unit V 60 35 120 70 240 140 480 280 720 420 1200 700 V V A 22 (TL = 60°C, 1/8 in Lead Lengths) 6.0 (TA = 60°C, P.C. Board mounting) IFSM TJ, Tstg 400 (for 1 cycle) *65 to +175 A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS Characteristic and Conditions Maximum Instantaneous Forward Voltage Drop (iF = 100 A, TJ = 25°C) Maximum Forward Voltage Drop (IF = 6.0 A, TA = 25°C, 3/8 in leads) Maximum Reverse Current (Rated DC Voltage) TJ = 25°C TJ = 100°C Symbol vF VF IR Max 1.25 0.90 25 1.0 Unit V V mA mA http://onsemi.com 2 MR750 SERIES IFSM , PEAK HALF WAVE CURRENT (AMP) 700 500 300 200 TYPICAL iF, INSTANTANEOUS FORWARD CURRENT (AMP) 100 70 50 30 20 TJ = 25°C 600 400 300 200 TJ = 175°C 100 80 60 1.0 2.0 5.0 10 20 50 100 NUMBER OF CYCLES AT 60 Hz 175°C 25°C VRRM MAY BE APPLIED BETWEEN EACH CYCLE OF SURGE. THE TJ NOTED IS TJ PRIOR TO SURGE MAXIMUM 25°C 10 7.0 5.0 3.0 2.0 COEFFICIENT (mV/° C) +0.5 Figure 2. Maximum Surge Capability 0 TYPICAL RANGE −0.5 1.0 0.7 0.5 0.3 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) −1.0 −1.5 −2.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 iF, INSTANTANEOUS FORWARD CURRENT (AMP) Figure 1. Forward Voltage 20 10 5.0 HEAT SINK Figure 3. Forward Voltage Temperature Coefficient R θJL(t) , JUNCTION−TO−LEAD TRANSIENT THERMAL RESISTANCE (° C/W) L L 1/2" 3/8" 1/4" 1/8" Both leads to heat sink, with lengths as shown. Variations in RqJL(t) below 2.0 seconds are independent of lead connections of 1/8 inch or greater, and vary only about ±20% from the values shown. Values for times greater than 2.0 seconds may be obtained by drawing a curve, with the end point (at 70 seconds) taken from Figure 8, or calculated from the notes, using the given curves as a guide. Either typical or maximum values may be used. For RqJL(t) values at pulse widths less than 0.1 second, the above curve can be extrapolated down to 10 ms at a continuing slope. 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, TIME (SECONDS) Figure 4. Typical Transient Thermal Resistance http://onsemi.com 3 MR750 SERIES IF(AV), AVERAGE FORWARD CURRENT (AMPS) 28 L = 1/8" 24 20 16 12 8.0 4.0 0 0 20 40 60 80 100 120 140 160 180 200 1/4" 3/8" RESISTIVE INDUCTIVE LOADS BOTH LEADS TO HEAT SINK WITH LENGTHS AS SHOWN 5/8" IF(AV), AVERAGE FORWARD CURRENT (AMPS) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 40 RqJA = 40°C/W SEE NOTE 6F (IPK/IAVE = 6.28) 60 80 100 120 140 160 180 200 RqJA = 25°C/W SEE NOTE RESISTIVE INDUCTIVE LOADS CAPACITANCE LOADS − 1F & 3F I(pk) = 5 Iavg I(pk) = 10 Iavg I(pk) = 20 Iavg f = 60 Hz TL, LEAD TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Maximum Current Ratings Figure 6. Maximum Current Ratings NOTES 32 PF(AV), POWER DISSIPATION (WATTS) 28 24 20 16 12 8.0 4.0 0 0 4.0 8.0 12 16 20 24 28 32 RESISTIVE − INDUCTIVE LOADS Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. Lowest values occur when one side of the rectifier is brought as close as possible to the heat sink as shown below. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heat Sink to Ambient RqL = Thermal Resistance, Lead to Heat Sink RqJ = Thermal Resistance, Junction to Case PF = Power Dissipation (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 40°C/W/in. Typically and 44°C/W/in Maximum. RqJ = 2°C/W typically and 4°C/W Maximum. Since RqJ is so low, measurements of the case temperature, TC, will be approximately equal to junction temperature in practical lead mounted applications. When used as a 60 Hz rectifierm the slow thermal response holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may be found from: TL = 175°−RqJL PF. PF may be found from Figure 7. The recommended method of mounting to a P.C. board is shown on the sketch, where RqJA is approximately 25°C/W for a 1−1/2" x 1−1/2" copper surface area. Values of 40°C/W are typical for mounting to terminal strips or P.C. boards where available surface area is small. CAPACITANCE LOADS I(pk) = 5 Iavg 10 Iavg 20 Iavg 6F 1F & 3F RqS(A) TA(A) TL(A) TC(A) TJ THERMAL CIRCUIT MODEL (For Heat Conduction Through The Leads) RqL(A) RqJ(A) RqJ(K) PF TC(K) TL(K) RqL(K) RqS(K) TA(K) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation 40 R θJL , THERMAL RESISTANCE, JUNCTION−TO−LEAD( ° C/W) 35 30 25 20 15 10 5.0 0 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 L, LEAD LENGTH (INCHES) BOTH LEADS TO HEAT SINK, EQUAL LENGTH SINGLE LEAD TO HEAT SINK, INSIGNIFICANT HEAT FLOW THROUGH OTHER LEAD Figure 8. Steady State Thermal Resistance http://onsemi.com 4 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ Board Ground Plane Recommended mounting for half wave circuit MR750 SERIES 100 RELATIVE EFFICIENCY (%) 70 TJ = 175°C CURRENT INPUT WAVEFORM 30 TJ = 25°C t rr , REVERSE RECOVERY TIME (m s) 30 20 TJ = 25°C 10 7.0 5.0 3.0 2.0 1.0 0.1 0 IR trr 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF = 5 A 3A 1A IF 50 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REPETITION FREQUENCY (kHz) IR/IF, RATIO OF REVERSE TO FORWARD CURRENT Figure 9. Rectification Efficiency 1000 700 500 C, CAPACITANCE (pF) 300 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VR, REVERSE VOLTAGE (VOLTS) 1.0 t fr , FORWARD RECOVERY TIME (m s) TJ = 25°C 0.7 Figure 10. Reverse Recovery Time uf tfr ufr TJ = 25°C 0.5 ufr = 1.0 V 0.3 0.2 ufr = 2.0 V 0.1 1.0 2.0 3.0 5.0 7.0 10 IF, FORWARD PULSE CURRENT (AMP) Figure 11. Junction Capacitance Figure 12. Forward Recovery Time RS RL VO For a square wave input of amplitude Vm, the efficiency factor becomes: V2m 2R L σ (square) + V2m .100% + 50% RL (3) Figure 13. Single−Phase Half−Wave Rectifier Circuit The rectification efficiency factor σ shown in Figure 9 was calculated using the formula: (1) V 2o (dc) .100% + .100% σ+ + V2o(rms) P (rms) V 2o (ac) ) V 2o (dc) RL P (dc) V2o (dc) RL For a sine wave input Vm sin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes: V2m p2RL σ (sine) + V2m .100% + 4 .100% + 40.6% π2 4R L (A full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing AC voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor σ, as shown on Figure 9. It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the AC component of Vo with a true rms AC voltmeter and the DC component with a DC voltmeter. The data was used in Equation 1 to obtain points for Figure 9. (2) http://onsemi.com 5 MR750 SERIES ORDERING INFORMATION Device MR750 MR750G MR750RL MR750RLG MR751 MR751G MR751RL MR751RLG MR752 MR752G MR752RL MR752RLG MR754 MR754G MR754RL MR754RLG MR756 MR756G MR756RL MR756RLG MR760 MR760G MR760RL MR760RLG Package Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MR750 SERIES PACKAGE DIMENSIONS AXIAL LEAD BUTTON CASE 194−04 ISSUE H A D 1 NOTES: 1. CATHODE SYMBOL ON PACKAGE. 2. 194−01 OBSOLETE, 194−04 NEW STANDARD. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 8.43 8.69 0.332 0.342 B 5.94 6.25 0.234 0.246 D 1.27 1.35 0.050 0.053 K 25.15 25.65 0.990 1.010 STYLE 1: PIN 1. CATHODE 2. ANODE K B K 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 MR750/D