MR754

MR750 SERIES MR754 and MR760 are Preferred Devices High Current Lead Mounted Rectifiers Features • • • • Current Capacity Comparable to Chassis Mounted Rectifiers Very High Surge Capacity Insulated Case Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Lead • • is Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Cathode Polarity Band http://onsemi.com HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50 − 1000 VOLTS DIFFUSED JUNCTION AXIAL LEAD BUTTON CASE 194 STYLE 1 MARKING DIAGRAM MR7xx AYYWWG G MR7 = Device Code xx = 50, 51, 52, 54, 56 or 60 A = Location Code YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 6 1 Publication Order Number: MR750/D MR750 SERIES MAXIMUM RATINGS Symbol MR750 MR751 MR752 MR754 MR756 MR760 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 50 100 200 400 600 1000 V Non−Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) VRSM 60 120 240 480 720 1200 V VR(RMS) 35 70 140 280 420 700 V RMS Reverse Voltage Average Rectified Forward Current (Single phase, resistive load, 60 Hz) (See Figures 5 and 6) IO Non−Repetitive Peak Surge Current (Surge applied at rated load conditions) Operating and Storage Junction Temperature Range A 22 (TL = 60°C, 1/8 in Lead Lengths) 6.0 (TA = 60°C, P.C. Board mounting) IFSM A 400 (for 1 cycle) TJ, Tstg °C *65 to +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS Characteristic and Conditions Symbol Max Unit Maximum Instantaneous Forward Voltage Drop (iF = 100 A, TJ = 25°C) vF 1.25 V Maximum Forward Voltage Drop (IF = 6.0 A, TA = 25°C, 3/8 in leads) VF 0.90 V Maximum Reverse Current (Rated DC Voltage) IR 25 1.0 A mA TJ = 25°C TJ = 100°C http://onsemi.com 2 MR750 SERIES 500 IFSM , PEAK HALF WAVE CURRENT (AMP) 700 TJ = 25°C 300 MAXIMUM 200 100 70 50 VRRM MAY BE APPLIED BETWEEN EACH CYCLE OF SURGE. THE TJ NOTED IS TJ PRIOR TO SURGE 400 300 25°C 175°C 200 25°C TJ = 175°C 100 80 60 30 1.0 2.0 5.0 20 10 20 50 100 NUMBER OF CYCLES AT 60 Hz Figure 2. Maximum Surge Capability 10 7.0 5.0 +0.5 3.0 0 COEFFICIENT (mV/° C) iF, INSTANTANEOUS FORWARD CURRENT (AMP) TYPICAL 600 2.0 1.0 0.7 0.5 TYPICAL RANGE −0.5 −1.0 −1.5 0.3 0.2 −2.0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.2 2.6 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.0 2.0 5.0 10 20 50 100 200 iF, INSTANTANEOUS FORWARD CURRENT (AMP) Figure 3. Forward Voltage Temperature Coefficient Figure 1. Forward Voltage R θJL(t) , JUNCTION−TO−LEAD TRANSIENT THERMAL RESISTANCE (° C/W) 0.5 20 10 L 1/2" 3/8" L 1/4" 5.0 1/8" HEAT SINK 3.0 Both leads to heat sink, with lengths as shown. Variations in RJL(t) below 2.0 seconds are independent of lead connections of 1/8 inch or greater, and vary only about ±20% from the values shown. Values for times greater than 2.0 seconds may be obtained by drawing a curve, with the end point (at 70 seconds) taken from Figure 8, or calculated from the notes, using the given curves as a guide. Either typical or maximum values may be used. For RJL(t) values at pulse widths less than 0.1 second, the above curve can be extrapolated down to 10 s at a continuing slope. 2.0 1.0 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 t, TIME (SECONDS) Figure 4. Typical Transient Thermal Resistance http://onsemi.com 3 10 20 30 50 70 IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) MR750 SERIES 28 RESISTIVE INDUCTIVE LOADS L = 1/8" 24 1/4" 20 BOTH LEADS TO HEAT SINK WITH LENGTHS AS SHOWN 3/8" 16 12 5/8" 8.0 4.0 0 20 0 40 60 80 100 120 140 160 180 200 7.0 RJA = 25°C/W SEE NOTE 6.0 RESISTIVE INDUCTIVE LOADS CAPACITANCE LOADS − 1 & 3 5.0 I(pk) = 5 Iavg I(pk) = 10 Iavg I(pk) = 20 Iavg 4.0 3.0 RJA = 40°C/W 2.0 1.0 0 f = 60 Hz SEE NOTE 6 (IPK/IAVE = 6.28) 0 20 40 TL, LEAD TEMPERATURE (°C) 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (°C) Figure 5. Maximum Current Ratings Figure 6. Maximum Current Ratings NOTES THERMAL CIRCUIT MODEL PF(AV), POWER DISSIPATION (WATTS) 32 (For Heat Conduction Through The Leads) CAPACITANCE LOADS I(pk) = 5 Iavg 28 24 10 Iavg 20 20 Iavg 6 RS(A) 1 & 3 RL(A) RJ(A) TA(A) RJ(K) RL(K) RS(K) TA(K) PF TL(A) TC(A) TJ TC(K) TL(K) 16 12 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. Lowest values occur when one side of the rectifier is brought as close as possible to the heat sink as shown below. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heat Sink to Ambient RL = Thermal Resistance, Lead to Heat Sink RJ = Thermal Resistance, Junction to Case PF = Power Dissipation (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RL = 40°C/W/in. Typically and 44°C/W/in Maximum. RJ = 2°C/W typically and 4°C/W Maximum. Since RJ is so low, measurements of the case temperature, TC, will be approximately equal to junction temperature in practical lead mounted applications. When used as a 60 Hz rectifierm the slow thermal response holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may be found from: TL = 175°−RJL PF. PF may be found from Figure 7. The recommended method of mounting to a P.C. board is shown on the sketch, where RJA is approximately 25°C/W for a 1−1/2" x 1−1/2" copper surface area. Values of 40°C/W are typical for mounting to terminal strips or P.C. boards where available surface area is small. RESISTIVE − INDUCTIVE LOADS 8.0 4.0 0 4.0 0 8.0 12 16 20 24 28 32 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation R θJL , THERMAL RESISTANCE, JUNCTION−TO−LEAD( ° C/W) 40 SINGLE LEAD TO HEAT SINK, INSIGNIFICANT HEAT FLOW THROUGH OTHER LEAD 35 30 25 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 20 15 10 BOTH LEADS TO HEAT SINK, EQUAL LENGTH 5.0 0 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 L, LEAD LENGTH (INCHES) Board Ground Plane Recommended mounting for half wave circuit Figure 8. Steady State Thermal Resistance http://onsemi.com 4 MR750 SERIES 30 t rr , REVERSE RECOVERY TIME ( s) RELATIVE EFFICIENCY (%) 100 TJ = 25°C 70 TJ = 175°C 50 CURRENT INPUT WAVEFORM 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 20 TJ = 25°C 10 7.0 IF = 5 A 3A 1A 5.0 IF 3.0 0 2.0 trr 1.0 0.1 70 100 0.2 REPETITION FREQUENCY (kHz) 2.0 3.0 5.0 7.0 10 Figure 10. Reverse Recovery Time 1.0 t fr , FORWARD RECOVERY TIME ( s) C, CAPACITANCE (pF) 0.5 0.7 1.0 0.3 IR/IF, RATIO OF REVERSE TO FORWARD CURRENT Figure 9. Rectification Efficiency 1000 700 500 IR TJ = 25°C 300 200 100 70 50 30 20 f TJ = 25°C 0.7 tfr fr 0.5 fr = 1.0 V 0.3 0.2 fr = 2.0 V 0.1 10 2.0 1.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 VR, REVERSE VOLTAGE (VOLTS) 3.0 5.0 7.0 10 IF, FORWARD PULSE CURRENT (AMP) Figure 11. Junction Capacitance Figure 12. Forward Recovery Time For a square wave input of amplitude Vm, the efficiency factor becomes: RS RL VO V2m 2R L σ (square) + V2m .100% + 50% RL Figure 13. Single−Phase Half−Wave Rectifier Circuit V2o (dc) RL (1) 2o (dc) V . . σ+ + V2o(rms) 100%+ 100% P (rms) V 2o (ac) ) V 2o (dc) RL For a sine wave input Vm sin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes: V2m 2RL σ (sine) + V2m .100% + 4 .100% + 40.6% π2 4R L (3) (A full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing AC voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor σ, as shown on Figure 9. It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the AC component of Vo with a true rms AC voltmeter and the DC component with a DC voltmeter. The data was used in Equation 1 to obtain points for Figure 9. The rectification efficiency factor σ shown in Figure 9 was calculated using the formula: P (dc) 2.0 (2) http://onsemi.com 5 MR750 SERIES ORDERING INFORMATION Device Package MR750 Axial Lead MR750G Axial Lead (Pb−Free) MR750RL Axial Lead MR750RLG Axial Lead (Pb−Free) MR751 Axial Lead MR751G Axial Lead (Pb−Free) MR751RL Axial Lead MR751RLG Axial Lead (Pb−Free) MR752 Axial Lead MR752G Axial Lead (Pb−Free) MR752RL Axial Lead MR752RLG Axial Lead (Pb−Free) MR754 Axial Lead MR754G Axial Lead (Pb−Free) MR754RL Axial Lead MR754RLG Axial Lead (Pb−Free) MR756 Axial Lead MR756G Axial Lead (Pb−Free) MR756RL Axial Lead MR756RLG Axial Lead (Pb−Free) MR760 Axial Lead MR760G Axial Lead (Pb−Free) MR760RL Axial Lead MR760RLG Axial Lead (Pb−Free) Shipping † 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel 1000 Units / Box 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MICRODE AXIAL CASE 194−04 ISSUE H DATE 09 SEP 2003 A NOTES: 1. CATHODE SYMBOL ON PACKAGE. 2. 194−01 OBSOLETE, 194−04 NEW STANDARD. D 1 MILLIMETERS INCHES DIM MIN MAX MIN MAX A 8.43 8.69 0.332 0.342 B 5.94 6.25 0.234 0.246 D 1.27 1.35 0.050 0.053 K 25.15 25.65 0.990 1.010 K SCALE 1:1 B K 2 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. CATHODE 2. ANODE DEV AYYWW DEV A YY WW = Specific Device Code = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42126B MICRODE AXIAL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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