MSC2295-CT1

MSC2295−BT1, MSC2295−CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector−Base Voltage Rating V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc IC 30 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Collector Current − Continuous 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic 3 2 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM Vx M G G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Collector−Base Cutoff Current (VCB = 10 Vdc, IE = 0) ICBO DC Current Gain (Note 1) (VCB = 10 Vdc, IC = −1.0 mAdc) MSC2295−BT1 MSC2295−CT1 hFE Collector−Gain — Bandwidth Product (VCB = 10 Vdc, IE = −1.0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) SC−59 CASE 318D Min Max − 0.1 Unit mAdc − 70 110 140 220 150 − fT MHz Vx = Device Code x= B or C M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Cre pF − 1.5 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Shipping † Device Package MSC2295−BT1 SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel MSC2295−BT1G MSC2295−CT1 MSC2295−CT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MSC2295−BT1/D MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H DATE 28 JUN 2012 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 C A MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 XXX MG G SOLDERING FOOTPRINT* 1 0.95 0.037 0.95 0.037 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 GENERIC MARKING DIAGRAM L A1 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 XXX M G = Specific Device Code = Date Code = Pb−Free Package* (*Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42664B SC−59 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. N.C. 3. ANODE STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE/CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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