MUN2211T1 Series
Preferred Devices
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
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NPN SILICON BIAS RESISTOR TRANSISTORS
• • • • • • • •
Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 - Machine Model: Class B The SC-59 Package can be Soldered Using Wave or Reflow The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb-Free Packages are Available
PIN 2 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND)
3 2
1
SC-59 CASE 318D STYLE 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector‐Base Voltage Collector‐Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
MARKING DIAGRAM
8x M G G 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction‐to‐Ambient Thermal Resistance, Junction‐to‐Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) - 55 to +150 Unit mW °C/W °C/W °C/W °C
RqJA RqJL TJ, Tstg
8x = Device Code (Refer to page 2) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the table on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 inch Pad.
DEVICE MARKING INFORMATION
See specific marking information in the Device Marking and Resistor Values table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 13
Publication Order Number: MUN2211T1/D
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MUN2211T1 MUN2211T1G MUN2211T3 MUN2211T3G MUN2212T1 MUN2212T1G MUN2213T1 MUN2213T1G MUN2214T1 MUN2214T1G MUN2214T3 MUN2214T3G MUN2215T1 MUN2215T1G MUN2216T1 MUN2216T1G MUN2230T1 MUN2230T1G MUN2231T1 (Note 3) MUN2231T1G (Note 3) MUN2232T1 MUN2232T1G MUN2233T1 MUN2233T1G MUN2234T1 (Note 3) MUN2234T1G (Note 3) MUN2236T1 MUN2236T1G MUN2237T1 MUN2237T1G MUN2240T1 (Note 3) MUN2240T1G (Note 3) MUN2241T1 (Note 3) MUN2241T1G (Note 3) Package SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) Marking 8A 8A 8A 8A 8B 8B 8C 8C 8D 8D 8D 8D 8E 8E 8F 8F 8G 8G 8H 8H 8J 8J 8K 8K 8L 8L 8N 8N 8P 8P 8T 8T 8U 8U R1 (K) 10 10 10 10 22 22 47 47 10 10 10 10 10 10 4.7 4.7 1.0 1.0 2.2 2.2 4.7 4.7 4.7 4.7 22 22 100 100 47 47 47 47 100 100 R2 (K) 10 10 10 10 22 22 47 47 47 47 47 47 ∞ ∞ ∞ ∞ 1.0 1.0 2.2 2.2 4.7 4.7 47 47 47 47 100 100 22 22 ∞ ∞ ∞ ∞ Shipping† 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets.
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MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (VCB = 50 V, IE = 0) Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter‐Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 nAdc nAdc mAdc
Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector‐Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2236T1, G MUN2230T1, G MUN2231T1, G MUN2237T1, G MUN2241T1, G MUN2215T1, G MUN2216T1, G MUN2232T1, G MUN2234T1, G MUN2240T1, G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
Collector‐Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(sat)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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MUN2211T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL MUN2211T1, G MUN2212T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2213T1, G MUN2240T1, G MUN2236T1, G MUN2237T1, G MUN2241T1, G VOH MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2234T1, G MUN2230T1, G MUN2215T1, G MUN2216T1, G MUN2231T1, G MUN2232T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G R1 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 70 0.8 0.8 0.8 0.17 0.8 0.8 0.8 0.055 0.38 0.8 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 100 1.0 1.0 1.0 0.21 1.0 1.0 1.0 0.12 0.47 1.0 2.15 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 130 1.2 1.2 1.2 0.25 1.2 1.2 1.2 0.185 0.56 1.2 2.6 kW 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
Resistor Ratio
R1/R2
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MUN2211T1 Series
350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 - 50 RqJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150
Figure 1. Derating Curve
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25°C 25°C 75°C 1000 VCE = 10 V TA = 75°C 25°C -25°C 100
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25°C
100 75°C IC, COLLECTOR CURRENT (mA) 10
25°C TA = -25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
TA = -25°C 25°C 75°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 TA = -25°C 25°C 0.1 75°C
1000 VCE = 10 V TA = 75°C 25°C -25°C 100
0.01
hFE , DC CURRENT GAIN
0.001 0 40 20 60 IC, COLLECTOR CURRENT (mA) 80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25°C
100 IC, COLLECTOR CURRENT (mA)
75°C
25°C TA = -25°C
3 Cob , CAPACITANCE (pF)
10
1
2
0.1
1
0.01 VO = 5 V
0
0
10
20
30
40
50
0.001
0
2
4
6
8
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current http://onsemi.com
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10 IC/IB = 10
TA = -25°C 25°C
1000 VCE = 10 V 75°C hFE , DC CURRENT GAIN TA = 75°C 25°C -25°C 100
1
0.1
0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1 f = 1 MHz IE = 0 V TA = 25°C
100
75°C
25°C TA = -25°C
IC, COLLECTOR CURRENT (mA)
0.8 Cob , CAPACITANCE (pF)
10
0.6
1
0.4
0.1
0.2
0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100 VO = 0.2 V TA = -25°C V in , INPUT VOLTAGE (VOLTS) 10 25°C 75°C
1
0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50
Figure 16. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C 250 hFE, DC CURRENT GAIN 25°C 0.1 75°C 0.01 25°C 200 -25°C 150 100 50 0.001 0 300 VCE = 10 TA = 75°C
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
1
2
4
6
8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA)
90 100
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C
100 75°C IC, COLLECTOR CURRENT (mA) 25°C
TA = -25°C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C
25°C 75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C -25°C 0.01 TA = -25°C 25°C 1000 75°C VCE = 10 V
0.1 25°C
100
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 75°C 10 25°C
1 TA = -25°C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 26. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25°C 100 25°C 1000 75°C
VCE = 10 V
0.1 -25°C 0.01
75°C
25°C
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100
75°C 25°C TA = -25°C
10
1
0.1
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 31. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C 0.1 -25°C 25°C hFE, DC CURRENT GAIN 100
75°C 10 TA = -25°C VCE = 10 V 1 25°C
0.01
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100
75°C 25°C
10
1 TA = -25°C 0.1
0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C 1 75°C
25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 36. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C 1000 VCE = 10 V
0.1 -25°C 0.01 25°C
75°C
100
10
TA = -25°C
25°C
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C
100 75°C 10 25°C
Cob, CAPACITANCE (pF)
1 TA = -25°C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C
1
75°C
25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 41. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = -25°C
0.1 -25°C 0.01
75°C
25°C
25°C
10
0.001
0
5
10 15 25 20 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100
75°C 25°C
10
1 TA = -25°C 0.1
0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 46. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25 °C 25°C 75°C 0.1 1000 VCE = 10 V 75°C TA = -25 °C 25°C
100
0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40
10
0.1
10 1 IC, COLLECTOR CURRENT (mA)
100
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
5 4.5 Cob, CAPACITANCE (pF) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 f = 1 MHz lE = 0 V TA = 25°C
100 IC, COLLECTOR CURRENT (mA)
75°C TA = -25 °C
10
25°C
1 VO = 5 V
0.1 0 5 15 20 25 30 10 Vin, INPUT VOLTAGE (VOLTS) 35 40
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25 °C
25°C 75°C
10
1
0.1 0 5 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 35
Figure 51. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25 °C 25°C 75°C 0.1 1000 VCE = 10 V 75°C 100 TA = -25 °C 25°C
10
0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
2 1.8 Cob, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 f = 1 MHz lE = 0 V TA = 25°C 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 IC, COLLECTOR CURRENT (mA)
100
75°C TA = -25 °C 25°C
10
1
0.1
0.01
VO = 5 V 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) 14 16
0.001
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25 °C 25°C 10 75°C
1 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 40
Figure 56. Input Voltage versus Output Current
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MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
FROM mP OR OTHER LOGIC
Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT IN LOAD
Figure 58. Open Collector Inverter: Inverts the Input Signal
Figure 59. Inexpensive, Unregulated Current Source
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MUN2211T1 Series
PACKAGE DIMENSIONS
SC-59 CASE 318D-04 ISSUE G
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110
3
HE
2
E
1
b e
DIM A A1 b c D E e L HE
MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50
MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099
MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118
A A1 L
C
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.4 0.094
1.0 0.039
SCALE 10:1
mm inches
0.8 0.031 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MUN2211T1/D