MUN2211T1

MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. Features http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS • • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: Class 1 - Machine Model: Class B The SC-59 Package can be Soldered Using Wave or Reflow The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb-Free Packages are Available PIN 2 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND) 3 2 1 SC-59 CASE 318D STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector‐Base Voltage Collector‐Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 8x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction‐to‐Ambient Thermal Resistance, Junction‐to‐Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) - 55 to +150 Unit mW °C/W °C/W °C/W °C RqJA RqJL TJ, Tstg 8x = Device Code (Refer to page 2) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 inch Pad. DEVICE MARKING INFORMATION See specific marking information in the Device Marking and Resistor Values table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 13 Publication Order Number: MUN2211T1/D MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN2211T1 MUN2211T1G MUN2211T3 MUN2211T3G MUN2212T1 MUN2212T1G MUN2213T1 MUN2213T1G MUN2214T1 MUN2214T1G MUN2214T3 MUN2214T3G MUN2215T1 MUN2215T1G MUN2216T1 MUN2216T1G MUN2230T1 MUN2230T1G MUN2231T1 (Note 3) MUN2231T1G (Note 3) MUN2232T1 MUN2232T1G MUN2233T1 MUN2233T1G MUN2234T1 (Note 3) MUN2234T1G (Note 3) MUN2236T1 MUN2236T1G MUN2237T1 MUN2237T1G MUN2240T1 (Note 3) MUN2240T1G (Note 3) MUN2241T1 (Note 3) MUN2241T1G (Note 3) Package SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) SC-59 SC-59 (Pb-Free) Marking 8A 8A 8A 8A 8B 8B 8C 8C 8D 8D 8D 8D 8E 8E 8F 8F 8G 8G 8H 8H 8J 8J 8K 8K 8L 8L 8N 8N 8P 8P 8T 8T 8U 8U R1 (K) 10 10 10 10 22 22 47 47 10 10 10 10 10 10 4.7 4.7 1.0 1.0 2.2 2.2 4.7 4.7 4.7 4.7 22 22 100 100 47 47 47 47 100 100 R2 (K) 10 10 10 10 22 22 47 47 47 47 47 47 ∞ ∞ ∞ ∞ 1.0 1.0 2.2 2.2 4.7 4.7 47 47 47 47 100 100 22 22 ∞ ∞ ∞ ∞ Shipping† 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector‐Base Cutoff Current (VCB = 50 V, IE = 0) Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter‐Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 nAdc nAdc mAdc Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector‐Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2236T1, G MUN2230T1, G MUN2231T1, G MUN2237T1, G MUN2241T1, G MUN2215T1, G MUN2216T1, G MUN2232T1, G MUN2234T1, G MUN2240T1, G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Collector‐Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL MUN2211T1, G MUN2212T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2213T1, G MUN2240T1, G MUN2236T1, G MUN2237T1, G MUN2241T1, G VOH MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2234T1, G MUN2230T1, G MUN2215T1, G MUN2216T1, G MUN2231T1, G MUN2232T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G R1 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 70 0.8 0.8 0.8 0.17 0.8 0.8 0.8 0.055 0.38 0.8 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 100 1.0 1.0 1.0 0.21 1.0 1.0 1.0 0.12 0.47 1.0 2.15 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 130 1.2 1.2 1.2 0.25 1.2 1.2 1.2 0.185 0.56 1.2 2.6 kW 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. Resistor Ratio R1/R2 http://onsemi.com 4 MUN2211T1 Series 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 - 50 RqJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 5 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25°C 25°C 75°C 1000 VCE = 10 V TA = 75°C 25°C -25°C 100 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C 25°C 0.1 75°C 1000 VCE = 10 V TA = 75°C 25°C -25°C 100 0.01 hFE , DC CURRENT GAIN 0.001 0 40 20 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C 25°C TA = -25°C 3 Cob , CAPACITANCE (pF) 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 50 0.001 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = -25°C 25°C 1000 VCE = 10 V 75°C hFE , DC CURRENT GAIN TA = 75°C 25°C -25°C 100 1 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 f = 1 MHz IE = 0 V TA = 25°C 100 75°C 25°C TA = -25°C IC, COLLECTOR CURRENT (mA) 0.8 Cob , CAPACITANCE (pF) 10 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V TA = -25°C V in , INPUT VOLTAGE (VOLTS) 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C 250 hFE, DC CURRENT GAIN 25°C 0.1 75°C 0.01 25°C 200 -25°C 150 100 50 0.001 0 300 VCE = 10 TA = 75°C 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 25°C TA = -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C -25°C 0.01 TA = -25°C 25°C 1000 75°C VCE = 10 V 0.1 25°C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C 1 TA = -25°C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25°C 100 25°C 1000 75°C VCE = 10 V 0.1 -25°C 0.01 75°C 25°C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 25°C TA = -25°C 10 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C 0.1 -25°C 25°C hFE, DC CURRENT GAIN 100 75°C 10 TA = -25°C VCE = 10 V 1 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 25°C 10 1 TA = -25°C 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C 1000 VCE = 10 V 0.1 -25°C 0.01 25°C 75°C 100 10 TA = -25°C 25°C 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C 100 75°C 10 25°C Cob, CAPACITANCE (pF) 1 TA = -25°C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = -25°C 0.1 -25°C 0.01 75°C 25°C 25°C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 25°C 10 1 TA = -25°C 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25°C 1 75°C 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 46. Input Voltage versus Output Current http://onsemi.com 14 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25 °C 25°C 75°C 0.1 1000 VCE = 10 V 75°C TA = -25 °C 25°C 100 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40 10 0.1 10 1 IC, COLLECTOR CURRENT (mA) 100 Figure 47. VCE(sat) versus IC Figure 48. DC Current Gain 5 4.5 Cob, CAPACITANCE (pF) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 f = 1 MHz lE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C TA = -25 °C 10 25°C 1 VO = 5 V 0.1 0 5 15 20 25 30 10 Vin, INPUT VOLTAGE (VOLTS) 35 40 Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25 °C 25°C 75°C 10 1 0.1 0 5 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 35 Figure 51. Input Voltage versus Output Current http://onsemi.com 15 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25 °C 25°C 75°C 0.1 1000 VCE = 10 V 75°C 100 TA = -25 °C 25°C 10 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain 2 1.8 Cob, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 f = 1 MHz lE = 0 V TA = 25°C 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 IC, COLLECTOR CURRENT (mA) 100 75°C TA = -25 °C 25°C 10 1 0.1 0.01 VO = 5 V 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) 14 16 0.001 Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25 °C 25°C 10 75°C 1 0 5 10 20 30 15 25 IC, COLLECTOR CURRENT (mA) 35 40 Figure 56. Input Voltage versus Output Current http://onsemi.com 16 MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 58. Open Collector Inverter: Inverts the Input Signal Figure 59. Inexpensive, Unregulated Current Source http://onsemi.com 17 MUN2211T1 Series PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 3 HE 2 E 1 b e DIM A A1 b c D E e L HE MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 A A1 L C STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 SCALE 10:1 mm inches 0.8 0.031 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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