MUN5113T1G

MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base −emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PIN 1 BASE (INPUT) R1 R2 3 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM 6x M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2010 Symbol PD Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) − 55 to +150 Unit mW °C/W °C/W °C/W °C 6x = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. RqJA RqJL TJ, Tstg October, 2010 − Rev. 10 1 Publication Order Number: MUN5111T1/D MUN5111T1 Series ORDERING INFORMATION AND RESISTOR VALUES Device MUN5111T1G MUN5112T1G MUN5113T1G MUN5113T3G MUN5113T1G MUN5114T1G MUN5115T1G (Note 3) MUN5116T1G (Note 3) MUN5130T1G (Note 3) MUN5131T1G (Note 3) MUN5132T1G (Note 3) MUN5133T1G (Note 3) MUN5134T1G (Note 3) MUN5135T1G (Note 3) MUN5136T1G MUN5137T1G Package SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) Marking 6A 6B 6C 6C 6C 6D 6E 6F 6G 6H 6J 6K 6L 6M 6N 6P R1 (K) 10 22 47 47 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 100 22 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ICBO ICEO IEBO − − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 − 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 − − − − − − − − − − − − − − − 0.25 Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 VCE(sat) VOL (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc http://onsemi.com 3 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 MUN5111T1/MUN5112T1/MUN5113T1/MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 Symbol VOH Min 4.9 Typ − Max − Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 kW Resistor Ratio R1/R2 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 RqJA = 833°C/W 50 0 - 50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 4 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 1000 VCE = 10 V TA = -25°C 0.1 75°C 25°C TA = 75°C 25°C 100 -25°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = -25°C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25°C 25°C TA = 75°C 100 25°C -25°C 75°C 0.1 0.01 10 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C C ob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0.001 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 -25°C TA = -25°C 75°C 0.1 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C 25°C -25°C IC, COLLECTOR CURRENT (mA) 0.8 C ob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) TA = -25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25°C -25°C TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25°C TA = -25°C Figure 20. Output Current versus Input Voltage +12 V 75°C 1 Typical Application for PNP BRTs LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 hFE, DC CURRENT GAIN 75°C 100 −25°C 25°C 10 0.1 75°C −25°C 25°C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 35 1 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) 120 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 10 IC, COLLECTOR CURRENT (mA) 9 Cob, CAPACITANCE (pF) 8 7 6 5 4 3 2 1 0 100 75°C 10 −25°C 25°C 1 0.1 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 0.01 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) −25°C 1 25°C 75°C 0.1 0 5 10 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 50 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C 0.1 −25°C 0.01 25°C hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = −25°C 25°C 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 28. VCE(sat) versus IC Figure 29. DC Current Gain 8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C 1 0.1 0.01 TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1 hFE, DC CURRENT GAIN (NORMALIZED) 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 75°C 100 TA = −25°C 25°C 0.1 −25°C 25°C 75°C 10 0.01 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 33. Maximum Collector Voltage versus Collector Current Figure 34. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 f = 1 MHz IE = 0 V TA = 25°C 100 25°C 10 75°C TA = −25°C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 25°C TA = −25°C 1 75°C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 37. Input Voltage versus Output Current http://onsemi.com 11 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1 hFE, DC CURRENT GAIN (NORMALIZED) 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 75°C TA = −25°C 25°C TA = −25°C 0.1 75°C 100 25°C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 38. Maximum Collector Voltage versus Collector Current Figure 39. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 10 1 0.1 0.01 25°C 75°C TA = −25°C VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 40. Output Capacitance Figure 41. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = −25°C 75°C 1 25°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 42. Input Voltage versus Output Current http://onsemi.com 12 MUN5111T1 Series PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 e1 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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