MUN5333DW1T1

MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. Features (3) R1 Q1 R2 (4) http://onsemi.com (2) R2 Q2 R1 (5) (6) (1) • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Pb−Free Packages are Available 6 1 SOT−363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 6 xx M G G 1 xx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Thermal Resistance − Junction-to-Lead Junction and Storage Temperature 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2005 Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) − 55 to +150 Unit mW mW/°C °C/W RqJA ORDERING AND DEVICE MARKING INFORMATION See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. Symbol PD Unit mW mW/°C °C/W °C/W °C Preferred devices are recommended choices for future use and best overall value. RqJA RqJL TJ, Tstg December, 2005 − Rev. 11 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1 MUN5311DW1T1G MUN5312DW1T1 MUN5312DW1T1G MUN5313DW1T1 MUN5313DW1T1G MUN5314DW1T1 MUN5314DW1T1G MUN5315DW1T1 MUN5315DW1T1G MUN5316DW1T1 MUN5316DW1T1G MUN5330DW1T1 MUN5330DW1T1G MUN5331DW1T1 MUN5331DW1T1G MUN5332DW1T1 MUN5332DW1T1G MUN5333DW1T1 MUN5333DW1T1G MUN5334DW1T1 MUN5334DW1T1G MUN5335DW1T1 MUN5335DW1T1G Package SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) Marking 11 R1 (K) 10 R2 (K) 10 Shipping† 12 22 22 13 47 47 14 10 47 15 10 ∞ 16 4.7 ∞ 3000/Tape & Reel 30 1.0 1.0 31 2.2 2.2 32 4.7 4.7 33 4.7 47 34 22 47 35 2.2 47 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 ICBO ICEO IEBO − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5335DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 − − − − − − − − − − − − 60 100 140 140 350 350 5.0 15 30 200 150 140 − − − − − − − − − − − − − − − − − − − − − − − − Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) http://onsemi.com 3 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5311DW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5330DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 VOL Vdc − − − − − − − − − − − − 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 − 0.8 0.055 0.38 0.038 − − − − − − − − − − − − − − − − − − − − − − − − 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 − 1.0 0.1 0.47 0.047 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc − − − − − − − − − − − − 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 − 1.2 0.185 0.56 0.056 kW Symbol Min Typ Max Unit (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor R1 Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1/MUN5316DW1T1 MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% R1/R2 http://onsemi.com 4 MUN5311DW1T1 Series ALL MUN5311DW1T1 SERIES DEVICES 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 − 50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 5 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 NPN TRANSISTOR 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C −25°C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = −25°C 0.1 75°C 25°C TA = 75°C 100 25°C −25°C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 NPN TRANSISTOR 1 IC/IB = 10 TA = −25°C 25°C 75°C 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) VCE = 10 V TA = 75°C 25°C −25°C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75°C 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 PNP TRANSISTOR 10 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 1000 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) VCE = 10 V 1 TA = −25°C 25°C TA = 75°C 100 25°C −25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 10 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 NPN TRANSISTOR 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) VCE = 10 V TA = 75°C 25°C −25°C 1 TA = −25°C 0.1 25°C 75°C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 75°C 10 1 0.1 0.01 25°C TA = −25°C VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 PNP TRANSISTOR 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 −25°C VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TA = −25°C 0.1 75°C 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25°C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75°C 25°C −25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 NPN TRANSISTOR 1 IC/IB = 10 TA = −25°C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75°C 25°C −25°C VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 PNP TRANSISTOR 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = −25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25°C −25°C VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25°C TA = −25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 100 25°C 1000 75°C VCE = 10 V 0.1 25°C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 75°C 10 25°C 1 0.1 0.01 TA = −25°C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current http://onsemi.com 14 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 25°C 1000 75°C VCE = 10 V 0.1 25°C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 47. VCE(sat) versus IC Figure 48. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 1 0.1 0.01 TA = −25°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 51. Input Voltage versus Output Current http://onsemi.com 15 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 25°C 1000 75°C VCE = 10 V 0.1 25°C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C 1 0.1 0.01 TA = −25°C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 56. Input Voltage versus Output Current http://onsemi.com 16 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = −25°C 100 25°C 1000 75°C VCE = 10 V 0.1 −25°C 0.01 75°C 25°C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 57. VCE(sat) versus IC Figure 58. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 61. Input Voltage versus Output Current http://onsemi.com 17 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 25°C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V 0.1 100 75°C 10 25°C TA = −25°C 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 TA = −25°C Vin, INPUT VOLTAGE (VOLTS) 75°C 25°C 10 TA = −25°C 1 75°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 0.001 Figure 64. Output Current versus Input Voltage Figure 65. Input Voltage versus Output Current http://onsemi.com 18 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 100 0.1 25°C 10 75°C 25°C TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 68. Output Capacitance Figure 69. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 70. Input Voltage versus Output Current http://onsemi.com 19 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V 0.1 25°C 100 75°C 10 TA = −25°C 25°C 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 71. VCE(sat) versus IC Figure 72. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 75°C 25°C 1 0.1 0.01 TA = −25°C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 73. Output Capacitance Figure 74. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 75. Input Voltage versus Output Current http://onsemi.com 20 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 100 0.1 25°C 10 75°C 25°C TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 76. VCE(sat) versus IC Figure 77. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 75°C 10 1 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C 25°C 0.001 Figure 78. Output Capacitance Figure 79. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 80. Input Voltage versus Output Current http://onsemi.com 21 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C hFE, DC CURRENT GAIN 75°C 1000 VCE = 10 V 0.1 25°C 100 25°C 10 TA = −25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 75°C 25°C Cob, CAPACITANCE (pF) 1 0.1 0.01 TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 83. Output Capacitance Figure 84. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 85. Input Voltage versus Output Current http://onsemi.com 22 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C 1000 VCE = 10 V 0.1 −25°C 0.01 25°C 75°C 100 10 TA = −25°C 25°C 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 86. VCE(sat) versus IC Figure 87. DC Current Gain 6 5 4 3 2 1 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 TA = −25°C 75°C 25°C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 88. Output Capacitance Figure 89. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 90. Input Voltage versus Output Current http://onsemi.com 23 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C 100 TA = −25°C 1000 VCE = 10 V 0.1 −25°C 0.01 75°C 25°C 25°C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 91. VCE(sat) versus IC Figure 92. DC Current Gain 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 75°C 25°C TA = −25°C 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 93. Output Capacitance Figure 94. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 95. Input Voltage versus Output Current http://onsemi.com 24 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C 0.1 −25°C 0.01 25°C hFE, DC CURRENT GAIN 75°C 100 TA = −25°C 1000 VCE = 10 V 25°C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 96. VCE(sat) versus IC Figure 97. DC Current Gain 8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C 1 0.1 0.01 TA = −25°C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 98. Output Capacitance Figure 99. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 100. Input Voltage versus Output Current http://onsemi.com 25 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 25°C hFE, DC CURRENT GAIN 1000 75°C 100 TA = −25°C VCE = 10 V 0.1 25°C 0.01 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 101. VCE(sat) versus IC Figure 102. DC Current Gain 3.5 3 Cob, CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 75°C 25°C 0.001 Figure 103. Output Capacitance Figure 104. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 105. Input Voltage versus Output Current http://onsemi.com 26 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = −25°C 0.1 75°C −25°C 25°C 0.01 25°C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 106. VCE(sat) versus IC Figure 107. DC Current Gain http://onsemi.com 27 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = −25°C 0.1 25°C 25°C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 108. VCE(sat) versus IC Figure 109. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 75°C 25°C Cob, CAPACITANCE (pF) TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 110. Output Capacitance Figure 111. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 112. Input Voltage versus Output Current http://onsemi.com 28 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 1000 75°C 100 VCE = 10 V 0.1 25°C TA = −25°C 25°C 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 113. VCE(sat) versus IC Figure 114. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 25°C 75°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 115. Output Capacitance Figure 116. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 75°C 1 25°C TA = −25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 117. Input Voltage versus Output Current http://onsemi.com 29 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1 1000 75°C 100 TA = −25°C 25°C 0.1 −25°C 25°C 75°C 10 0.01 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 118. VCE(sat) versus IC Figure 119. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 f = 1 MHz IE = 0 V TA = 25°C 100 25°C 10 75°C TA = −25°C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 120. Output Capacitance Figure 121. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 25°C TA = −25°C 1 75°C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 122. Input Voltage versus Output Current http://onsemi.com 30 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 −25°C hFE, DC CURRENT GAIN 75°C 0.1 25°C 1000 75°C 100 TA = −25°C VCE = 10 V 25°C 0.01 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 123. VCE(sat) versus IC Figure 124. DC Current Gain 5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) 100 10 1 0.1 0.01 TA = −25°C 75°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 125. Output Capacitance Figure 126. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 127. Input Voltage versus Output Current http://onsemi.com 31 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1 1000 75°C TA = −25°C 25°C TA = −25°C 0.1 75°C 100 25°C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 128. VCE(sat) versus IC Figure 129. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 10 1 0.1 0.01 25°C 75°C TA = −25°C VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 130. Output Capacitance Figure 131. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = −25°C 75°C 1 25°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 132. Input Voltage versus Output Current http://onsemi.com 32 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 −25°C 75°C 25°C 1000 75°C 100 TA = −25°C VCE = 10 V 0.1 hFE, DC CURRENT GAIN 25°C 0.01 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 133. VCE(sat) versus IC Figure 134. DC Current Gain 5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 135. Output Capacitance Figure 136. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 137. Input Voltage versus Output Current http://onsemi.com 33 MUN5311DW1T1 Series PACKAGE DIMENSIONS SOT−363 CASE 419B−02 ISSUE T A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 4 S 1 2 3 − B− D 6 PL 0.2 (0.008) M B N M J C STYLE 1: PIN 1. 2. 3. 4. 5. 6. H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 34 MUN5311DW1T1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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