NCP2890

NCP2890, NCV2890 1.0 Watt Audio Power Amplifier The NCP2890 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The NCP2890 is capable of delivering 1.0 W of continuous average power to an 8.0 W BTL load from a 5.0 V power supply, and 320 mW to a 4.0 W BTL load from a 2.6 V power supply. The NCP2890 provides high quality audio while requiring few external components and minimal power consumption. It features a low−power consumption shutdown mode, which is achieved by driving the SHUTDOWN pin with logic low. The NCP2890 contains circuitry to prevent from “pop and click” noise that would otherwise occur during turn−on and turn−off transitions. For maximum flexibility, the NCP2890 provides an externally controlled gain (with resistors), as well as an externally controlled turn−on time (with the bypass capacitor). Due to its excellent PSRR, it can be directly connected to the battery, saving the use of an LDO. This device is available in a 9−Pin Flip−Chip CSP (standard Tin−Lead and Lead−Free versions) and a Micro8t package. Features http://onsemi.com MARKING DIAGRAMS 9−Pin Flip−Chip CSP FC SUFFIX CASE 499E A3 1 XXX AYWWG A1 8 C1 8 1 Micro8 DM SUFFIX CASE 846A 1 XXX A, R Y WW, W G XXX RYWG G • • • • • • • • • • • • 1.0 W to an 8.0 W BTL Load from a 5.0 V Power Supply Excellent PSRR: Direct Connection to the Battery “Pop and Click” Noise Protection Circuit Ultra Low Current Shutdown Mode 2.2 V−5.5 V Operation External Gain Configuration Capability External Turn−on Time Configuration Capability Up to 1.0 nF Capacitive Load Driving Capability Thermal Overload Protection Circuitry AEC−Q100 Qualified Part Available Pb−Free Packages are Available NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes = Specific Device Code, = Assembly Location = Year = Work Week = Pb−Free Package PIN CONNECTIONS 9−Pin Flip−Chip CSP A1 INM B1 VM_P C1 BYPASS A2 OUTA B2 VM C2 A3 INP B3 Vp C3 OUTB SHUTDOWN (Top View) Micro8 Typical Applications • Portable Electronic Devices • PDAs • Wireless Phones SHUTDOWN BYPASS INP INM 1 2 3 4 (Top View) 8 7 6 5 OUTB VM Vp OUTA ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2006 1 November, 2006 − Rev. 10 Publication Order Number: NCP2890/D NCP2890, NCV2890 Rf 20 kW Cs Ci 390 nF Ri 20 kW Vp 1 mF AUDIO INPUT INM INP Vp 300 kW BYPASS 1 mF − + Vp OUTA R1 20 kW R2 20 kW OUTB 8W − + Cbypass 300 kW SHUTDOWN SHUTDOWN CONTROL VM VIH VIL VM_P Figure 1. Typical Audio Amplifier Application Circuit with Single Ended Input Rf 20 kW Cs Ci + 390 nF AUDIO INPUT − 390 nF 20 kW 20 kW Cbypass Rf 1 mF 300 kW BYPASS 300 kW SHUTDOWN VIH VIL VM_P SHUTDOWN CONTROL VM Ci 20 kW Ri Vp − + INM INP − + Vp OUTA R1 20 kW R2 20 kW OUTB Ri Vp 1 mF 8W Figure 2. Typical Audio Amplifier Application Circuit with a Differential Input This device contains 671 active transistors and 1899 MOS gates. http://onsemi.com 2 NCP2890, NCV2890 PIN DESCRIPTION 9−Pin Flip−Chip CSP A1 A2 A3 B1 B2 B3 C1 C2 C3 Micro8 4 5 3 NA 7 6 2 8 1 Type I O I I I I I O I Symbol INM OUTA INP VM_P VM Vp BYPASS OUTB SHUTDOWN Description Negative input of the first amplifier, receives the audio input signal. Connected to the feedback resistor Rf and to the input resistor Rin. Negative output of the NCP2890. Connected to the load and to the feedback resistor Rf. Positive input of the first amplifier, receives the common mode voltage. Power Analog Ground. Core Analog Ground. Positive analog supply of the cell. Range: 2.2 V−5.5 V. Bypass capacitor pin which provides the common mode voltage (Vp/2). Positive output of the NCP2890. Connected to the load. The device enters in shutdown mode when a low level is applied on this pin. MAXIMUM RATINGS (Note 1) Rating Supply Voltage Operating Supply Voltage Input Voltage Max Output Current Power Dissipation (Note 2) Operating Ambient Temperature Max Junction Temperature Storage Temperature Range Thermal Resistance Junction−to−Air ESD Protection Micro8 9−Pin Flip−Chip CSP Symbol Vp Op Vp Vin Iout Pd TA TJ Tstg RqJA − Value 6.0 2.2 to 5.5 V 2.0 V = Functional Only −0.3 to Vcc +0.3 500 Internally Limited −40 to +85 150 −65 to +150 230 (Note 3) 8000 >250 Unit V − V mA − °C °C °C °C/W V Human Body Model (HBM) (Note 4) Machine Model (MM) (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at TA = +25°C. 2. The thermal shutdown set to 160°C (typical) avoids irreversible damage on the device due to power dissipation. For further information see page 10. 3. For the 9−Pin Flip−Chip CSP package, the RqJA is highly dependent of the PCB Heatsink area. For example, RqJA can equal 195°C/W with 50 mm2 total area and also 135°C/W with 500 mm2. For further information see page 10. The bumps have the same thermal resistance and all need to be connected to optimize the power dissipation. 4. Human Body Model, 100 pF discharge through a 1.5 kW resistor following specification JESD22/A114. 5. Machine Model, 200 pF discharged through all pins following specification JESD22/A115. http://onsemi.com 3 NCP2890, NCV2890 ELECTRICAL CHARACTERISTICS Limits apply for TA between −40°C to +85°C (Unless otherwise noted). Characteristic Supply Quiescent Current Symbol Idd Conditions Vp = 2.6 V, No Load Vp = 5.0 V, No Load Vp = 2.6 V, 8 W Vp = 5.0 V, 8 W Common Mode Voltage Shutdown Current Shutdown Voltage High Shutdown Voltage Low Turning On Time (Note 8) Output Swing Rms Output Power Vcm ISD VSDIH VSDIL TWU Vloadpeak PO − − − − Cby = 1 mF Vp = 2.6 V, RL = 8.0 W Vp = 5.0 V, RL = 8.0 W (Note 7) Vp = 2.6 V, RL = 4.0 W THD + N < 0.1% Vp = 2.6 V, RL = 8.0 W THD + N < 0.1% Vp = 5.0 V, RL = 8.0 W THD + N < 0.1% Vp = 5.0 V, RL = 8.0 W Vp = 2.6 V Vp = 5.0 V Vp = 2.6 V, G = 2.0 10 Hz < F < 20 kHz Vp = 5.0 V, G = 10 10 Hz < F < 20 kHz Positive Supply Rejection Ratio PSRR V+ G = 2.0, RL = 8.0 W Vpripple_pp = 200 mV Cby = 1.0 mF Input Terminated with 10 W F = 217 Hz Vp = 5.0 V Vp = 3.0 V Vp = 2.6 V F = 1.0 kHz Vp = 5.0 V Vp = 3.0 V Vp = 2.6 V Efficiency Thermal Shutdown Temperature (Note 9) Total Harmonic Distortion h Tsd THD Vp = 2.6, F = 1.0 kHz RL = 4.0 W, AV = 2.0 PO = 0.32 W Vp = 5.0 V, F = 1.0 kHz RL = 8.0 W, AV = 2.0 PO = 1.0 W 6. 7. 8. 9. Vp = 2.6 V, Porms = 320 mW Vp = 5.0 V, Porms = 1.0 W Min (Note 6) − − − − − − 1.2 − − 2.0 4.0 − Typ 1.5 1.7 1.7 1.9 Vp/2 10 − − 285 2.12 4.15 0.36 0.28 − 1.08 − −30 − 84 − 0.65 30 − W mV dB − Max (Note 6) 4 5.5 − 600 − 0.4 − − − − V nA V V ms V W Unit mA Maximum Power Dissipation (Note 8) Output Offset Voltage Signal−to−Noise Ratio PDmax VOS SNR − 77 − dB − − − −64 −72 −73 − − − − − − − − 140 − − − − − − −64 −74 −75 48 63 160 − 0.04 − − 0.02 − − − − − − 180 − − − − − − % °C % Min/Max limits are guaranteed by design, test or statistical analysis. This parameter is not tested in production for 9−Pin Flip−Chip CSP package in case of a 5.0 V power supply. See page 11 for a theoretical approach of this parameter. For this parameter, the Min/Max values are given for information. http://onsemi.com 4 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS 1 Vp = 5 V RL = 8 W Pout = 250 mW AV = 2 THD + N (%) 1 Vp = 3.3 V RL = 8 W Pout = 150 mW AV = 2 THD + N (%) 0.1 0.1 0.01 0.01 0.001 10 100 1000 FREQUENCY (Hz) 10,000 100,000 0.001 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Figure 1. THD + N versus Frequency Figure 2. THD + N versus Frequency 1 Vp = 3 V RL = 8 W Pout = 250 mW AV = 2 THD + N (%) THD + N (%) 0.1 1 Vp = 2.6 V RL = 8 W Pout = 100 mW AV = 2 0.1 0.01 0.01 0.001 10 100 1000 FREQUENCY (Hz) 10,000 100,000 0.001 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Figure 3. THD + N versus Frequency Figure 4. THD + N versus Frequency 1 Vp = 2.6 V RL = 4 W Pout = 100 mW AV = 2 THD + N (%) 10 Vp = 5 V RL = 8 W 1 kHz AV = 2 1 THD + N (%) 0.1 0.1 0.01 0.01 0.001 10 100 1000 FREQUENCY (Hz) 10,000 100,000 0.001 0 200 400 600 800 1000 1200 1400 Pout, POWER OUT (mW) Figure 5. THD + N versus Frequency Figure 6. THD + N versus Power Out http://onsemi.com 5 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS 10 Vp = 3.3 V RL = 8 W 1 kHz AV = 2 10 Vp = 3 V RL = 8 W 1 kHz AV = 2 1 THD + N (%) 1 THD + N (%) 0.1 0.1 0.01 0.01 0.001 0 100 200 300 400 500 600 Pout, POWER OUT (mW) 0.001 0 100 200 300 400 500 Pout, POWER OUT (mW) Figure 7. THD + N versus Power Out Figure 8. THD + N versus Power Out 10 Vp = 2.6 V RL = 8 W 1 kHz AV = 2 THD + N (%) 10 Vp = 2.6 V RL = 4 W 1 kHz AV = 2 1 THD + N (%) 1 0.1 0.1 0.01 0.001 0 100 200 300 400 Pout, POWER OUT (mW) 0.01 0 100 200 300 400 500 Pout, POWER OUT (mW) Figure 9. THD + N versus Power Out Figure 10. THD + N versus Power Out 1700 1500 OUTPUT POWER (mW) 1300 THD+N = 10% PSRR (dB) 1100 900 THD+N = 1% 700 500 300 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 POWER SUPPLY (V) f = 1 kHz RL = 8 W −30 −35 −40 −45 −50 −55 −60 −65 −70 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 5 V RL = 8 W Rin = 10 W AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF Figure 11. Output Power versus Power Supply Figure 12. PSRR @ Vp = 5 V http://onsemi.com 6 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS −20 −30 −40 PSRR (dB) −50 −60 −70 −80 −90 −100 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 5 V RL = 8 W Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF −25 −30 −35 PSRR (dB) −40 −45 −50 −55 −60 −65 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 5 V RL = 8 W Rin = 10 W AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 mF Figure 13. PSRR @ Vp = 5 V Figure 14. PSRR @ Vp = 5 V −10 −20 −30 −40 PSRR (dB) −50 −60 −70 −80 −90 −100 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 5 V RL = 8 W Rin = Float AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 mF −30 −35 −40 −45 PSRR (dB) −50 −55 −60 −65 −70 −75 −80 10 Vp = 3 V RL = 8 W Rin = 10 W AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF 100 1000 FREQUENCY (Hz) 10,000 100,000 Figure 15. PSRR @ Vp = 5 V Figure 16. PSRR @ Vp = 3 V −20 −30 −40 PSRR (dB) −50 −60 −70 −80 −90 −100 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 3 V RL = 8 W Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF −25 −30 −35 −40 PSRR (dB) −45 −50 −55 −60 −65 −70 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 3 V RL = 8 W Rin = 10 W AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 mF Figure 17. PSRR @ Vp = 3 V Figure 18. PSRR @ Vp = 3 V http://onsemi.com 7 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS −10 −20 −30 −40 PSRR (dB) −50 −60 −70 −80 −90 −100 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 3 V RL = 8 W Rin = Float AV = 4 Vripple = 200 mVpk−pk Cbypass = 1 mF −30 −35 −40 −45 PSRR (dB) −50 −55 −60 −65 −70 −75 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 3.3 V RL = 8 W Rin = 10 W AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF Figure 19. PSRR @ Vp = 3 V Figure 20. PSRR @ Vp = 3.3 V −20 −30 −40 PSRR (dB) −50 −60 −70 −80 Vp = 3.3 V RL = 8 W Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF −30 −35 −40 −45 PSRR (dB) −50 −55 −60 −65 −70 Vp = 2.6 V RL = 8 W Rin = 10 W AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF −90 −100 10 100 1000 FREQUENCY (Hz) 10,000 100,000 −75 −80 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Figure 21. PSRR @ Vp = 3.3 V Figure 22. PSRR @ Vp = 2.6 V −20 −30 −40 PSRR (dB) −50 −60 −70 −80 −90 −100 10 100 1000 FREQUENCY (Hz) 10,000 100,000 Vp = 2.6 V RL = 8 W Rin = Float AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF −30 −35 −40 PSRR (dB) −45 −50 −55 −60 −65 −70 10 100 1000 FREQUENCY (Hz) 10,000 100,000 2.2 mF 1 mF Vp = 5 V RL = 8 W Rin = 10 W AV = 2 Vripple = 200 mVpk−pk Figure 23. PSRR @ Vp = 2.6 V Figure 24. PSRR versus Cbypass @ Vp = 5 V http://onsemi.com 8 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS −30 −35 −40 −45 PSRR (dB) −50 −55 −60 −65 −70 −75 −80 10 −60 2.2 mF 100 1000 FREQUENCY (Hz) 10,000 100,000 −70 −80 −5 −4 −3 −2 −1 0 1 2 3 4 5 1 mF Vp = 3 V RL = 8 W Rin = 10 W AV = 2 Vripple = 200 mVpk−pk 0 −10 −20 PSRR (dB) −30 −40 −50 Vp = 5 V RL = 8 W F = 217 Hz AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF DC OUTPUT VOLTAGE (V) Figure 25. PSRR versus Cbypass @ Vp = 3 V Figure 26. PSRR @ DC Output Voltage 0 −10 −20 −30 PSRR (dB) −40 −50 −60 −70 −80 −90 −2.5 −2 −1.5 −1 −0.5 0 0.5 1 1.5 2 2.5 Vp = 3 V RL = 8 W F = 217 Hz AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF 0 −10 −20 PSRR (dB) −30 −40 −50 −60 −70 −80 −2.5 −2 −1.5 −1 −0.5 0 0.5 1 1.5 2 2.5 Vp = 2.6 V RL = 8 W F = 217 Hz AV = 2 Vripple = 200 mVpk−pk Cbypass = 1 mF DC OUTPUT VOLTAGE (V) DC OUTPUT VOLTAGE (V) Figure 27. PSRR @ DC Output Voltage Figure 28. PSRR @ DC Output Voltage Figure 29. Turning On Time − Vp = 5 V Figure 30. Turning Off Time − Vp = 5 V http://onsemi.com 9 NCP2890, NCV2890 TYPICAL PERFORMANCE CHARACTERISTICS 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 Pout, OUTPUT POWER (W) Vp = 5 V RL = 8 W F = 1 kHz THD + N < 0.1% PD, POWER DISSIPATION (W) PD, POWER DISSIPATION (W) 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.1 0.2 0.3 0.4 0.5 Pout, OUTPUT POWER (W) Vp = 3.3 V RL = 8 W F = 1 kHz THD + N < 0.1% Figure 31. Power Dissipation versus Output Power 0.25 PD, POWER DISSIPATION (W) PD, POWER DISSIPATION (W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.1 0.2 0.3 0.4 0 Figure 32. Power Dissipation versus Output Power 0.2 RL = 4 W 0.15 Vp = 3 V RL = 8 W F = 1 kHz THD + N < 0.1% RL = 8 W 0.1 0.05 0 Pout, OUTPUT POWER (W) Vp = 2.6 V F = 1 kHz THD + N < 0.1% 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 Pout, OUTPUT POWER (W) Figure 33. Power Dissipation versus Output Power Figure 34. Power Dissipation versus Output Power 700 PD, POWER DISSIPATION (mW) 600 200 mm2 500 50 mm2 400 300 200 100 0 0 PDmax = 633 mW for Vp = 5 V, RL = 8 W 20 40 60 80 100 120 140 TA, AMBIENT TEMPERATURE (°C) 500 mm2 PCB Heatsink Area DIE TEMPERATURE (°C) @ AMBIENT TEMPERATURE 25°C 180 160 140 120 100 80 60 40 160 Vp = 2.6 V 50 100 150 200 250 300 PCB HEATSINK AREA (mm2) Vp = 4.2 V Maximum Die Temperature 150°C RL = 8 W Vp = 5 V Vp = 3.3 V Figure 35. Power Derating − 9−Pin Flip−Chip CSP Figure 36. Maximum Die Temperature versus PCB Heatsink Area http://onsemi.com 10 NCP2890, NCV2890 APPLICATION INFORMATION Detailed Description Shutdown Function The NCP2890 audio amplifier can operate under 2.6 V until 5.5 V power supply. It delivers 320 mW rms output power to 4.0 W load (Vp = 2.6 V) and 1.0 W rms output power to 8.0 W load (Vp = 5.0 V). The structure of the NCP2890 is basically composed of two identical internal power amplifiers; the first one is externally configurable with gain−setting resistors Rin and Rf (the closed−loop gain is fixed by the ratios of these resistors) and the second is internally fixed in an inverting unity−gain configuration by two resistors of 20 kW. So the load is driven differentially through OUTA and OUTB outputs. This configuration eliminates the need for an output coupling capacitor. Internal Power Amplifier The device enters shutdown mode when shutdown signal is low. During the shutdown mode, the DC quiescent current of the circuit does not exceed 100 nA. Current Limit Circuit The maximum output power of the circuit (Porms = 1.0 W, Vp = 5.0 V, RL = 8.0 W) requires a peak current in the load of 500 mA. In order to limit the excessive power dissipation in the load when a short−circuit occurs, the current limit in the load is fixed to 800 mA. The current in the four output MOS transistors are real−time controlled, and when one current exceeds 800 mA, the gate voltage of the MOS transistor is clipped and no more current can be delivered. Thermal Overload Protection The output PMOS and NMOS transistors of the amplifier were designed to deliver the output power of the specifications without clipping. The channel resistance (Ron) of the NMOS and PMOS transistors does not exceed 0.6 W when they drive current. The structure of the internal power amplifier is composed of three symmetrical gain stages, first and medium gain stages are transconductance gain stages to obtain maximum bandwidth and DC gain. Turn−On and Turn−Off Transitions A cycle with a turn−on and turn−off transition is illustrated with plots that show both single ended signals on the previous page. In order to eliminate “pop and click” noises during transitions, output power in the load must be slowly established or cut. When logic high is applied to the shutdown pin, the bypass voltage begins to rise exponentially and once the output DC level is around the common mode voltage, the gain is established slowly (50 ms). This way to turn−on the device is optimized in terms of rejection of “pop and click” noises. The device has the same behavior when it is turned−off by a logic low on the shutdown pin. During the shutdown mode, amplifier outputs are connected to the ground. When a shutdown low level is applied, it takes 350 ms before the DC output level is tied to Ground. However, as shown on Figure 30, the turn off time of the audio signal is 40 ms. A theoretical value of turn−on time at 25°C is given by the following formula. Cby: bypass capacitor R: internal 300 k resistor with a 25% accuracy Ton = 0.95 * R * Cby (285 ms with Cby = 1 mF) If a faster turn on time is required then a lower bypass capacitor can be used. The other option is to use NCP2892 which offers 100 ms with 1 mF bypass capacitor. Internal amplifiers are switched off when the temperature exceeds 160°C, and will be switched on again only when the temperature decreases fewer than 140°C. The NCP2890 is unity−gain stable and requires no external components besides gain−setting resistors, an input coupling capacitor and a proper bypassing capacitor in the typical application. The first amplifier is externally configurable (Rf and Rin), while the second is fixed in an inverting unity gain configuration. The differential−ended amplifier presents two major advantages: − The possible output power is four times larger (the output swing is doubled) as compared to a single−ended amplifier under the same conditions. − Output pins (OUTA and OUTB) are biased at the same potential Vp/2, this eliminates the need for an output coupling capacitor required with a single−ended amplifier configuration. The differential closed loop−gain of the amplifier is given by Avd + 2 * Porms + V Rf + orms . Rin Vinrms Output power delivered to the load is given by (Vopeak)2 (Vopeak is the peak differential 2 * RL output voltage). When choosing gain configuration to obtain the desired output power, check that the amplifier is not current limited or clipped. The maximum current which can be delivered to the load is 500 mA Iopeak + Vopeak . RL http://onsemi.com 11 NCP2890, NCV2890 Gain−Setting Resistor Selection (Rin and Rf) Rin and Rf set the closed−loop gain of the amplifier. In order to optimize device and system performance, the NCP2890 should be used in low gain configurations. The low gain configuration minimizes THD + noise values and maximizes the signal to noise ratio, and the amplifier can still be used without running into the bandwidth limitations. A closed loop gain in the range from 2 to 5 is recommended to optimize overall system performance. An input resistor (Rin) value of 22 kW is realistic in most of applications, and doesn’t require the use of a too large capacitor Cin. Input Capacitor Selection (Cin) The size of the capacitor must be large enough to couple in low frequencies without severe attenuation. However a large input coupling capacitor requires more time to reach its quiescent DC voltage (Vp/2) and can increase the turn−on pops. An input capacitor value between 0.1 m and 0.39 mF performs well in many applications (With Rin = 22 KW). Bypass Capacitor Selection (Cby) The input coupling capacitor blocks the DC voltage at the amplifier input terminal. This capacitor creates a high−pass filter with Rin, the cut−off frequency is given by fc + 1 . 2 * P * Rin * Cin The bypass capacitor Cby provides half−supply filtering and determines how fast the NCP2890 turns on. This capacitor is a critical component to minimize the turn−on pop. A 1.0 mF bypass capacitor value (Cin = < 0.39 mF) should produce clickless and popless shutdown transitions. The amplifier is still functional with a 0.1 mF capacitor value but is more susceptible to “pop and click” noises. Thus, a 1.0 mF bypassing capacitor is recommended. C4* R3 20 kW Vp 1 mF C1 AUDIO INPUT C2 390 nF R2 20 kW INM INP Vp 300 kW − + Vp OUTA 20 kW 8W 20 kW OUTB Vp C3 100 kW R1 1 mF BYPASS 300 kW SHUTDOWN − + R4* SHUTDOWN CONTROL VM VM_P * R4, C4: Not Mounted Figure 37. Schematic of the Demonstration Board of the 9−Pin Flip−Chip CSP Device http://onsemi.com 12 NCP2890, NCV2890 Silkscreen Layer Top Layer Bottom Layer Figure 38. Demonstration Board for 9−Pin Flip−Chip CSP Device − PCB Layers http://onsemi.com 13 NCP2890, NCV2890 BILL OF MATERIAL Item 1 2 3 4 5 6 7 8 9 Part Description NCP2890 Audio Amplifier SMD Resistor 100 KW SMD Resistor 20 KW Ceramic Capacitor 1.0 mF 16 V X7R Ceramic Capacitor 390 nF 50 V Z5U Ceramic Capacitor 1.0 mF 16 V X7R Not Mounted BNC Connector I/O Connector. It can be plugged by BLZ5.08/2 (Weidmüller Reference) Ref. − R1 R2, R3 C1 C2 C3 R4, C4 J3 J4, J5 PCB Footprint − 0805 0805 1206 1812 1206 − − − Manufacturer ON Semiconductor Vishay−Draloric Vishay−Draloric Murata Kemet Murata − Telegartner Weidmüller Manufacturer Reference NCP2890 D12CRCW Series CRCW0805 Series GRM42−6X7R105K16 C1812C394M5UAC GRM42−6X7R105K16 − JO1001A1948 SL5.08/2/90B ORDERING INFORMATION Device NCP2890AFCT2 NCP2890AFCT2G NCP2890DMR2 NCP2890DMR2G NCV2890DMR2G Marking MAG MAH MAB MAB MBZ Package 9−Pin Flip−Chip CSP 9−Pin Flip−Chip CSP (Pb−Free) Micro8 Micro8 (Pb−Free) Micro8 (Pb−Free) Shipping† 3000/T ape and Reel 3000/T ape and Reel 4000/T ape and Reel 4000/T ape and Reel 4000/T ape and Reel NOTE: This product is offered with either eutectic (SnPb−tin/lead) or lead−free solder bumps (G suffix) depending on the PCB assembly process. The NCP2890AFCT2G version requires a lead−free solder paste and should not be used with a SnPb solder paste. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 14 NCP2890, NCV2890 PACKAGE DIMENSIONS 9 PIN FLIP−CHIP CASE 499E−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. MILLIMETERS MIN MAX 0.540 0.660 0.210 0.270 0.330 0.390 1.450 BSC 1.450 BSC 0.290 0.340 0.500 BSC 1.000 BSC 1.000 BSC 4X −A− D −B− E 0.10 C TOP VIEW 0.10 C 0.05 C −C− SEATING PLANE A DIM A A1 A2 D E b e D1 E1 A2 A1 SIDE VIEW D1 e C B e A 9X E1 b 1 2 3 0.05 C A B 0.03 C BOTTOM VIEW SOLDERING FOOTPRINT* 0.50 0.0197 0.50 0.0197 0.265 0.01 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 NCP2890, NCV2890 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A−01 OBSOLETE, NEW STANDARD 846A−02. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A −− −− 1.10 −− −− 0.043 A1 0.05 0.08 0.15 0.002 0.003 0.006 b 0.25 0.33 0.40 0.010 0.013 0.016 c 0.13 0.18 0.23 0.005 0.007 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 E 2.90 3.00 3.10 0.114 0.118 0.122 e 0.65 BSC 0.026 BSC L 0.40 0.55 0.70 0.016 0.021 0.028 HE 4.75 4.90 5.05 0.187 0.193 0.199 HE E PIN 1 ID e b 8 PL 0.08 (0.003) M TB S A S −T− PLANE 0.038 (0.0015) A1 SEATING A c L SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 8X 3.20 0.126 4.24 0.167 5.28 0.208 6X 0.65 0.0256 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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