NCP336FCT2GEVB

NCP336, NCP337 Controlled Load Switch with Auto-Discharge Path, 3 A Description The NCP336 and NCP337 are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a current consumption optimization with PMOS structure, leakage currents are eliminated by isolating connected IC on the battery when not used. Output discharge path is also embedded to eliminate residual voltages on the output rail for the NCP337 part only. Proposed in a wide input voltage range from 1.2 V to 5.5 V, in a small 1 x 1.5 mm WLCSP6, pitch 0.5 mm. http://onsemi.com WLCSP6 FC SUFFIX CASE 567FH PIN CONNECTIONS Features • • • • • • • 1.2 V − 5.5 V Operating Range 21 mW P MOSFET at 4.5 V DC Current up to 3 A Output Auto−Discharge Active High EN Pin WLCSP6 1 x 1.5 mm This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant 1 2 A OUT IN B OUT IN C GND EN Applications • • • • • (Top View) Mobile Phones Tablets Digital Cameras GPS Portable Devices VCC ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. V+ LS NCP336 or NCP337 C2 1μF ENy IN IN EN OUT OUT GND A2 B2 or LDO A1 B1 Platform IC’n 100n C1 SMPS DCDC Converter ENx 0 LS Platform IC’n+1 Figure 1. Typical Application Circuit © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 2 1 Publication Order Number: NCP336/D NCP336, NCP337 Table 1. PIN FUNCTION DESCRIPTION Pin Name Pin Number Type Description IN A2, B2 POWER Load−switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as close as possible to the IC. GND C1 POWER Ground connection. EN C2 INPUT OUT A1, B1 OUTPUT Enable input, logic high turns on power switch. Load−switch output; connect a 1 mF ceramic capacitor from OUT to GND as close as possible to the IC is recommended. Figure 2. Block Diagram http://onsemi.com 2 NCP336, NCP337 Table 2. MAXIMUM RATINGS Rating Symbol Value Unit VEN, VIN, VOUT −0.3 to + 7.0 V VIN, VOUT 0 to + 7.0 V TJ −40 to + 125 °C Storage Temperature Range TSTG −40 to + 150 °C Moisture Sensitivity (Note 2) MSL Level 1 IN, OUT, EN, Pins: (Note 1) From IN to OUT Pins: Input/Output (Note 1) Maximum Junction Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. OPERATING CONDITIONS 1. 2. 3. 4. Symbol Parameter VIN Operational Power Supply VEN Conditions Max Unit 1.2 5.5 V Enable Voltage 0 5.5 TA Ambient Temperature Range −40 25 +85 °C TJ Junction Temperature Range −40 25 +125 °C CIN Decoupling input capacitor 1 mF COUT Decoupling output capacitor 1 mF RqJA Thermal Resistance Junction to Air IOUT Maximum DC current PD Power Dissipation Rating (Note 4) WLCSP package (Note 3) Typ 100 °C/W 3 A TA ≤ 25°C WLCSP package 0.66 W TA = 85°C WLCSP package 0.26 W According to JEDEC standard JESD22−A108. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020. The RqJA is dependent of the PCB heat dissipation and thermal via. The maximum power dissipation (PD) is given by the following formula: PD + Min T JMAX * T A R qJA http://onsemi.com 3 NCP336, NCP337 Table 4. ELECTRICAL CHARACTERISTIC Min & Max Limits apply for TA between −40°C to +85°C for VIN between 1.2 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = +25°C and VIN = 5 V (Unless otherwise noted). Parameter Symbol Conditions Min Typ Max Unit mW POWER SWITCH RDSON Static drain−source on−state resistance Rdis Output discharge path VIH High−level input voltage VIL Low−level input voltage Rpd EN pull down resistor Vin = 5.5 V I = 1 A (Note 5) 20 22 Vin = 4.5 V I = 500 mA (Note 5) 21 25 Vin = 3.3 V I = 500 mA (Note 5) 23 28 Vin = 2.5 V I = 500 mA (Note 5) 28 35 Vin = 1.8 V I = 250 mA (Note 5) 40 45 Vin = 1.2 V TA = 25°C, I = 200 mA 95 120 70 90 EN = low W V 0.9 0.5 5 MW QUIESCENT CURRENT Istd Standby current Vin = 4.2 V EN = low, No load 1 mA Iq Quiescent current Vin = 4.2 V EN = high, No load 1 mA TEN Enable time RL = 25 W, Cout = 1 mF 323 TR Output rise time Vin = 3.6 V (Note 6) RL = 25 W, Cout = 1 mF 810 TON ON time (TEN + TR) RL = 25 W, Cout = 1 mF 1130 TF Output fall time NCP337. RL = 25 W, Cout = 1 mF 42 TIMINGS 5. Guaranteed by design and characterization 6. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground TIMINGS Vin EN Vout TEN TR TDIS TON TOFF Figure 3. Enable, Rise and Fall Time http://onsemi.com 4 TF ms NCP336, NCP337 TYPICAL CHARACTERISTICS Figure 4. Rdson (mW) vs. Vin (V) Figure 5. Rdson (mW) vs. Iload (A) Figure 6. Rdson (mW) vs. Temperature (5C) at 100 mA Figure 7. Rdson (mW) vs. Temperature (5C) at 3 A http://onsemi.com 5 NCP336, NCP337 TYPICAL CHARACTERISTICS Figure 8. Standby (mA) and Leakage Current (mA) vs. Vin (V) Figure 9. Standby Current (mA) vs. Temperature (5C) Figure 10. Leakage Current (mA) vs. Temperature (5C) Figure 11. Quiescent Current (mA) vs. Temperature (5C) http://onsemi.com 6 NCP336, NCP337 Figure 12. Enable Time and Rise Time Figure 13. Disable Time and Fall Time FUNCTIONAL DESCRIPTION Overview Auto Discharge The NCP337 is a high side P channel MOSFET power distribution switch designed to isolate ICs connected on the battery in order to save energy. The part can be turned on, with a wide range of battery from 1.2 V to 5.5 V. NMOS FET is placed between the output pin and GND, in order to discharge the application capacitor connected on OUT pin. The auto−discharge is activated when EN pin is set to low level (disable state). The discharge path (Pull down NMOS) stays activated as long as EN pin is set at low level and Vin > 1.2 V. In order to limit the current across the internal discharge Nmosfet, the typical value is set at 70 W. Enable Input Enable pin is an active high. The path is opened when EN pin is tied low (disable), forcing P MOS switch off. The IN/OUT path is activated with a minimum of Vin of 1.2 V and EN forced to high level. Cin and Cout Capacitors IN and OUT, 1 mF, at least, capacitors must be placed as close as possible the part to for stability improvement. http://onsemi.com 7 NCP336, NCP337 APPLICATION INFORMATION • TJ = PD x RqJA + TA Power Dissipation Main contributor in term of junction temperature is the power dissipation of the power MOSFET. Assuming this, the power dissipation and the junction temperature in normal mode can be calculated with the following equations: • PD = RDS(on) x (IOUT)2 PD = Power dissipation (W) RDS(on) = Power MOSFET on resistance (W) IOUT = Output current (A) TJ = Junction temperature (°C) RqJA = Package thermal resistance (°C/W) TA = Ambient temperature (°C) PCB Recommendations The NCP337 integrates an up to 3 A rated PMOS FET, and the PCB design rules must be respected to properly evacuate the heat out of the silicon. By increasing PCB area, especially around IN and OUT pins, the RqJA of the package can be decreased, allowing higher power dissipation. Figure 14. Routing Example: 2 oz, 4 layers with vias across 2 internal inners. Example of application definition. T J * T A + R qJA P D + R qJA R DS(on) I At 3 A, 25°C ambient temperature, RDS(on) 20 mW @ Vin 5 V, the junction temperature will be: 2 TJ + TA ) Rq TJ: junction temperature. TA: ambient temperature. Rq = Thermal resistance between IC and air, through PCB. RDS(on): intrinsic resistance of the IC Mosfet. I: load DC current. 3 2) P D + 25 ) (0.024 100 + 43 oC Taking into account of Rq obtain with: • 2 oz, 4 layers: 60°C/W. At 3 A, 65°C ambient temperature, RDS(on) 24 mW @ Vin 5 V, the junction temperature will be: Taking into account of Rq obtain with: • 1 oz, 2 layers: 100°C/W. TJ + TA ) Rq P D + 65 ) (0.024 3 2) 60 + 78 oC ORDERING INFORMATION Device Marking Option Package Shipping† NCP337FCT2G AC Auto discharge WLCSP 1 x 1.5 mm 3000 Tape / Reel NCP336FCT2G AF Without Autodischarge WLCSP 1 x 1.5 mm 3000 Tape / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP6 1.0x1.5x0.609 CASE 567FH ISSUE A DATE 21 JUN 2022 GENERIC MARKING DIAGRAM* XXX AYW G XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON79918E WLCSP6 1.0x1.5x0.609 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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