NCP5217A
Single Synchronous
Step-Down Controller
The NCP5217A is a synchronous step−down controller for high
performance systems battery−power systems. The NCP5217A
includes a high efficiency PWM controller. A pin is provided to enable
or disable forced PWM mode of operation. An internal power good
voltage monitor tracks the SMPS output. NCP5217A also features
soft−start sequence, UVLO for VCC and switcher, overvoltage
protection, overcurrent protection, undervoltage protection and
thermal shutdown. The IC is packaged in QFN14.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
0.8% accuracy 0.8 V Reference
4.5 V to 27 V Battery/Adaptor Voltage Range
Adjustable Output Voltage Range: 0.8 V to 3.3 V
Selectable Power Saving Mode / Force PWM Mode
Lossless Inductor Current Sensing
Programmable Transient−Response−Enhancement (TRE) Control
Programmable Adaptive Voltage Positioning (AVP)
Input Supply Feedforward Control
Internal Soft−Start
Integrated Output Discharge (Soft−Stop)
Build−in Adaptive Gate Drivers
PGOOD Indication
Overvoltage, Undervoltage and Overcurrent Protections
Thermal Shutdown
QFN14 Package
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
MARKING
DIAGRAM
N5217
ALYWG
G
QFN14
CASE 485AL
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
EN_SKIP
BST
1
14
CS+
2
13 DH
CS−/Vo
3
12 SWN
COMP
4
11 IDRP/OCP
FB
5
10 VCC
PGOOD
6
9
Typical Applications
7
• Notebook Application
• System Power
AGND
DL/TRESET
8
PGND
QFN14
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCP5217AMNTXG
QFN14
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
May, 2011 − Rev. 2
1
Publication Order Number:
NCP5217A/D
NCP5217A
EN_SKIP
Level
Control
1
Thermal Shutdown
IDRP/OCP
Detection
ENABLE
FPWM
SKIP
14 BST
Over Current
Detector
CS+
CS−/Vo
AVP
Control
2
+
CDIFF
−
Current Sense
Amplifier
3
VREF+10%
PGH
+
13 DH
NCP5217A
12 SWN
−
DISCH
PGL
+
Control Logic,
OSC
Protection,
COMP
4
+
−
FB
−
VREF−10%
VREF
VREF−20%
+
Error Amplifier
−
5
11
RAMP
UVP
Generator and
PWM Logic
IDRP/OCP
UVLO
Control
VCC
OVP
+
10 VCC
−
VREF+15%
OC & TRE Detection
PGOOD
6
AGND
7
PGOOD
9
DL/TRESET
8
PGND
Figure 1. Block Diagram
+5V
EN_SKIP
QFN14
VIN
1
14
EN_SKIP
PGOOD
CS+
3
CS−/Vo
4
COMP
5
FB
6
PGOOD
BST
DH 13
SWN 12
NCP5217A
2
VOUT
IDRP/OCP 11
VCC 10
DL/TRESET
AGND
PGND
7
8
9
Figure 2. Typical Application Circuit
http://onsemi.com
2
PGND
NCP5217A
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Description
1
EN_SKIP
This pin serves as two functions. Enable: Logic control for enabling the switcher. SKIP: Power saving
mode (Skip and Force PWM) programmable pin.
2
CS+
3
CS−/Vo
Inductor current differential sense non−inverting input.
Inductor current differential sense inverting input.
4
COMP
Output of the error amplifier.
5
FB
6
PGOOD
7
AGND
Analog ground.
8
PGND
Ground reference and high−current return path for the bottom gate driver.
9
DL/TRESET
10
VCC
Output voltage feed back.
Power good indicator of the output voltage. High impendence (open drain) if power good (in
regulation). Low impendence if power not good.
Gate driver output of bottom N−channel MOSFET. It also has the function for TRESET.
Supply for analog circuit and bottom gate driver.
11
IDRP/OCP
Over current protection and Droop Voltage programmable pin.
12
SWN
Switch node between the top MOSFET and bottom MOSFET.
13
DH
Gate driver output of the top N−channel MOSFET.
14
BST
Top gate driver input supply, a bootstrap capacitor connection between SWN and this pin.
ABSOLUTE MAXIMUM RATINGS
Rating
VCC Power Supply Voltage to AGND
Symbol
Value
Unit
VCC
−0.3, 6.0
V
VBST−VSWN,
VDH−VSWN,
VCC−VPGND,
VDL−VPGND,
−0.3, 6.0
V
VIO
−0.3, 6.0
V
VSWN
−5 V (< 100 ns)
30 V
V
High−Side Gate Drive/Low−Side Gate Drive Outputs
DH, DL
−3(DC)
V
PGND
VPGND
−0.3, 0.3
V
48
°C/W
High−side Gate Drive Supply: BST to SWN
High−side Gate Drive Voltage: DH to SWN
Low−side Gate Drive Supply: VCC to PGND
Low−side Gate Drive Voltage: DL to PGND
Input / Output Pins to AGND
Switch Node SWN
Thermal Characteristics
Thermal Resistance Junction−to−Ambient (QFN14 Package)
RqJA_QFN14
Operating Junction Temperature Range (Note 1)
TJ
−40 to + 150
°C
Operating Ambient Temperature Range
TA
− 40 to + 85
°C
Storage Temperature Range
Tstg
− 55 to +150
°C
Moisture Sensitivity Level
MSL
1
−
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. Internally limited by thermal shutdown, 150°C min.
http://onsemi.com
3
NCP5217A
ELECTRICAL CHARACTERISTICS (VIN = 12 V, VCC = 5 V, TA = −40°C to 85°C, unless other noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
SUPPLY VOLTAGE
Input Voltage
VIN
4.5
−
27
V
VCC Operating Voltage
VCC
4.5
5.0
5.5
V
SUPPLY CURRENT
VCC Quiescent Supply Current
in FPWM operation
IVCC_FPWM
EN_SKIP = 2.0 V, VFB forced above
regulation point. DH, DL are open
1.5
2.5
mA
VCC Quiescent Supply Current
in Power Saving Operation
IVCC_PS
EN_SKIP = 5 V, VFB forced above
regulation point, DH, DL are open
1.5
2.5
mA
VCC Shutdown Current
IVCC_SD
EN_SKIP = L, VCC = 5 V, true shutdown
1
uA
BST Quiescent Supply Current
in FPWM operation
IBST_FPWM
EN_SKIP = 1.5 V, VFB forced above
regulation point, DH and DL are open,
No boost trap diode
0.3
mA
BST Quiescent Supply Current
in power−saving operation
IBST_PS
EN_SKIP = 5 V, VFB forced above
regulation point, DH and DL are open
No boost trap diode
0.3
mA
BST Shutdown Current
IBST_SD
EN_SKIP = 0 V
1
mA
dV/dt on VCC
dVCC/dt
(Note 2)
−10
10
V/ms
Rising VCC Threshold
VCCth+
Wake Up
4.05
4.25
4.48
V
VCC UVLO Hysteresis
VCCHYS
200
275
400
mV
105
110
115
%
VOLTAGE−MONITOR
Power Good High Threshold
VPGH
PGOOD in from higher Vo
(PGOOD goes high)
Power Good High Hysteresis
VPGH_HYS
PGOOD high hysteresis
(PGOOD goes low)
Power Good Low Threshold
VPGL
PGOOD in from lower Vo
(PGOOD goes high)
Power Good Low Hysteresis
VPGL_HYS
PGOOD low hysteresis
(PGOOD goes low)
5
80
85
%
90
%
−5
%
Power Good High Delay
Td_PGH
150
us
Power Good Low Delay
Td_PGL
1.5
us
Output Overvoltage Rising
Threshold
OVPth+
With respect to Error Comparator
Threshold of 0.8 V
Overvoltage Fault Propagation
Delay
OVPTblk
FB forced 2% above trip threshold
UVPth
With respect to Error Comparator
Threshold of 0.8 V
Output Undervoltage Trip
Threshold
Output Undervoltage Protection
Blanking Time
110
115
120
1.5
%
us
75
80
85
%
UVPTblk
−
8/fSW
−
s
VREF
0.7936
0.8
0.8064
V
FSW
270
300
330
kHz
1.92
2.21
ms
1.47
ms
REFERENCE OUTPUT
Internal Reference Voltage
OSCILLATOR
Operation Frequency
OVERCURRENT THRESHOLD DETECTION
Total Detection Time
OCSET Detection Time
TDETECT
A short period before SS
1.26
T_OCDET
(Note 2)
1.09
2. Guaranteed by design, not tested in production.
http://onsemi.com
4
NCP5217A
ELECTRICAL CHARACTERISTICS (VIN = 12 V, VCC = 5 V, TA = −40°C to 85°C, unless other noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
0.9
1.1
1.3
ms
INTERNAL SOFT−START
Soft−Start Time
TSS
VOLTAGE ERROR AMPLIFIER
GAIN_VEA
(Note 2)
88
dB
Unity Gain Bandwidth
BW_VEA
(Note 2)
15
MHz
Slew Rate
SR_VEA
COMP PIN TO GND = 100 pF (Note 2)
2.5
FB Bias Current
Ibias_FB
Output Voltage Swing
Vmax_EA
Isource_EA = 2 mA
Vmin_EA
Isink_EA = 2 mA
DC Gain
V/ms
0.1
3.3
V
3.5
0.15
mA
0.3
DIFFERENTIAL CURRENT SENSE AMPLIFIER
CS+ and CS− Common−mode
Input Signal Range
VCSCOM_MAX
Refer to AGND
3.5
V
Input Bias Current
CS_IIB
−100
100
nA
Input Signal Range
CS_range
−70
70
mV
−1.0
1.0
mA
0.575
mA/mV
Offset Current at IDRP
[(CS+) − (CS−)] to IDRP Gain
IDRP_offset
IDRP_GAIN
(IDRP/((CS+) −
(CS−)))
(CS+) − (CS−) = 0 V
(CS+) − (CS−) =
10 mV, V(IDRP) =
0.8 V
TA = 25°C
0.475
TA=−40°C to 85°C
0.425
BW_CS
At −3dB to DC Gain (Note 2)
Maximum IDRP Output Voltage
IDRP_Max
(CS+) − (CS−) = 70 mV, Isource drops to
95% of the value when V(IDRP) = 0.8 V
Minimum IDRP Output Voltage
IDRP_Min
Current−Sense Bandwidth
IDRP Output current
0.525
0.625
20
MHz
2.5
V
0
I_IDRP
−1.0
V
35
mA
26.4
mA
OVERCURRENT PROTECTION SETTING
Overcurrent Threshold (OCTH)
Detection Current
I_OCSET
Sourced from OCP before soft−start,
Rocp = 16.7 kW is connected from OCP to
AGND or FB
21.6
24
Ratio of OC Threshold over
OCSET Voltage
K_OCSET
V((CS+) − (CS−)) / V_OCSET
(Note 2)
OCSET Voltage for Default
Fixed OC Threshold
VOCSET_DFT
Rocp v 2 kW is connected from OCP to
AGND or FB
OCSET Voltage for Adjustable
OC Threshold
VOCSET_ADJ
Rocp = 8.3 ~ 25 kW is connected from OCP
to AGND or FB
200
OCSET Voltage for OC Disable
VOCSET_DIS
Rocp w 35 kW is connected from OCP to
AGND or FB
720
Default Fixed OC Threshold
V_OCTH_DFT
(CS+) – (CS−), Pin IDRP/OCP is shorted to
AGND or FB
35
40
45
mV
Adjustable OC Threshold
V_OCTH
((CS+) − (CS−))
(CS+) – (CS−),
During OC threshold,
set a voltage at pin
OCP
VOCSET = 200 mV
15
20
25
mV
VOCSET = 600 mV
52
60
68
0.1
−
100
mV
600
mV
mV
GATE DRIVERS
DH Pull−HIGH Resistance
RH_DH
200 mA Source current
2.5
W
DH Pull−LOW Resistance
DL Pull−HIGH Resistance
RL_DH
200 mA Sink current
1.5
W
RH_DL
200 mA Source current
2
W
DL Pull−LOW Resistance
RL_DL
200 mA Sink current
0.75
W
2. Guaranteed by design, not tested in production.
http://onsemi.com
5
NCP5217A
ELECTRICAL CHARACTERISTICS (VIN = 12 V, VCC = 5 V, TA = −40°C to 85°C, unless other noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
Isource_DH
(Note 2)
1
A
Isink_DH
(Note 2)
1.7
A
Isource_DL
(Note 2)
1.3
A
Isink_DL
(Note 2)
3.3
A
TD_LH
DL−off to DH−on (Note 2)
20
ns
TD_HL
DH−off to DL−on (Note 2)
20
NCD_TH
SWN−PGND, at EN_SKIP = 5 V
−1
GATE DRIVERS
DH Source Current
DH Sink Current
DL Source Current
DL Sink Current
Dead Time
Negative Current Detection
Threshold
SWN source leakage
mV
ISWN_SD
EN_SKIP = 0 V
R_DH_SWN
(Note 2)
EN_SKIP Logic Input Voltage
for Disable
VEN_Disable
Set as Disable
0.7
1.0
1.3
V
Hysteresis
150
200
250
mV
EN_SKIP Logic Input Voltage
for FPWM
VEN_FPWM
Set as FCCM mode
1.7
1.95
2.25
V
EN_SKIP Logic Input Voltage
for Skip Mode
VEN_SKIP
Set as SKIP Mode
2.35
2.6
2.85
V
Hysteresis
100
175
250
mV
Internal Resistor from DH to
SWN
1
100
uA
kW
CONTROL SECTION
EN_SKIP Source Current
IEN_SOURCE
VEN_SKIP = 0 V
0.1
mA
EN_SKIP Sink Current
IEN_SINK
VEN_SKIP = 5 V
0.1
mA
PGOOD Pin ON Resistance
PGOOD_R
I_PGOOD = 5 mA
PGOOD Pin OFF Current
PGOOD_LK
100
W
1
mA
20
35
W
0.2
0.3
0.4
V
7.2
8
8.8
mA
600
700
mV
OUTPUT DISCHARGE MODE
Output Discharge
On−Resistance
Rdischarge
Threshold for Discharge Off
Vth_DisOff
EN = 0 V
TRE SETTING
TRE Threshold Detection
Current
I_TRESET
Source from DL in the short period before
soft−start. (Rtre = 47 kW is connected from
DL to GND
Detection Voltage for TRE
Threshold Selection
VDL_TRE_1
(Default)
Internal TRE_TH is
set to 300 mV
Rtre w 75 kW
(Note 2)
500
VDL_TRE_2
Internal TRE_TH is
set to 500 mV
Rtre = 44 ~ 50 kW
(Note 2)
300
450
VDL_TRE_3
TRE is Disabled
Rtre v 25 kW
(Note 2)
0
250
TRE Comparator Offset
TRE_OS
(Note 2)
10
mV
Propagation Delay of TRE
Comparator
TD_PWM
(Note 2)
20
ns
Tsd
(Note 2)
150
°C
Tsdhys
(Note 2)
25
°C
THERMAL SHUTDOWN
Thermal Shutdown
Thermal Shutdown Hysteresis
2. Guaranteed by design, not tested in production.
http://onsemi.com
6
NCP5217A
TYPICAL OPERATING CHARACTERISTICS
VCC PIN SHUTDOWN CURRENT (nA)
0.83
VFB Vref VOLTAGE (V)
0.82
0.81
0.8
0.79
0.78
−15
10
35
60
85
100
50
0
−50
−100
−40
−15
10
35
60
AMBIENT TEMPERATURE (°C)
Figure 3. Vref Voltage vs Ambient Temperature
Figure 4. VCC Shutdown Current vs Ambient
Temperature
315
0.8
310
0.7
305
300
295
85
0.6
0.5
0.4
0.3
290
285
−40
−15
10
35
60
0.2
−40
85
−15
10
35
60
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
Figure 5. Switching Frequency vs Ambient
Temperature
Figure 6. IDRP Gain vs Ambient Temperature
85
43
30
20
10
0
−10
−20
−40
−15
10
35
60
85
DEFAULT FIX OC THRESHOLD (mV)
40
BST PIN SHUTDOWN CURRENT (nA)
150
AMBIENT TEMPERATURE (°C)
IDRP_Gain (mA/mV)
FSW SWITCHING FREQUENCY (kHz)
0.77
−40
200
42
41
40
39
38
37
−40
−15
10
35
60
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
Figure 7. BST Shutdown Current vs Ambient
Temperature
Figure 8. Default Fix OC Threshold vs Ambient
Temperature
http://onsemi.com
7
85
NCP5217A
TYPICAL OPERATING CHARACTERISTICS
Top to Bottom: EN, SWN, Vo, PGOOD
Top to Bottom: EN, SWN, Vo, PGOOD
Figure 9. Powerup Sequence
Figure 10. Powerdown Sequence
Top to Bottom: SWN_Slave, SWM, Vo
Top to Bottom: EN, SWM, Vo
Figure 11. On Line Mode Change (CCM " DCM)
Figure 12. On Line Mode Change (DCM " CCM)
Top to Bottom: SWN, Vo, Output Current
Figure 13. Typical Transient
http://onsemi.com
8
NCP5217A
DETAILED OPERATING DESCRIPTION
General
further improve transient response in CCM, a transient
response enhancement circuitry is implemented inside the
NCP5217A. In CCM operation, the controller is
continuously monitoring the COMP pin output voltage of
the error amplifier to detect the load transient events. The
functional block diagram of TRE is shown below.
The NCP5217A synchronous step−down power
controller contains a PWM controller for wide
battery/adaptor voltage range applications
The NCP5217A includes power good voltage monitor,
soft−start, over current protection, under−voltage
protection, overvoltage protection and thermal shutdown.
The NCP5217A features power saving function which can
increase the efficiency at light load. It is ideal for battery
operated systems. The IC is packaged in QFN14.
COMP
+
R
Control Logic
TRE
+
C
The internal control logic is powered by VCC. The device
is controlled by an EN_SKIP pin. The EN_SKIP serves two
functions. When voltage of EN_SKIP is below
VEN_Disable, it shuts down the device. When the voltage
of EN_SKIP is between VEN_FPWM and VEN_SKIP, the
device is operating as force PWM mode. When voltage level
of EN_SKIP is above VEN_SKIP, the device is operating as
power saving mode. When EN_SKIP is above
VEN_Disable, the internal Vref is activated and power−on
reset occurs which resets all the protection faults. Once Vref
reaches its regulation voltage, an internal signal will wake
up the supply under−voltage monitor which will assert a
“GOOD” condition. In addition, the NCP5217A
continuously monitors VCC level with an undervoltage
lockout (UVLO) function.
internal TRE_TH
Figure 14. Block Diagram of TRE Circuit
Once the large transient occurs, the COMP signal may be
large enough to exceed the threshold and then TRE “flag”
signal will be asserted in a short period which is typically
around one normal switching cycle. In this short period, the
controller will be running at high frequency and hence has
faster response. After that the controller comes back to
normal switching frequency operation. We can program the
internal TRE threshold (TRE_TH). For detail please see the
electrical table of “TRE Setting” section. Basically, the
recommend internal TRE threshold value is around 1.5
times of peak−to−peak value of the COMP signal at CCM
operation. The higher the internal TRE_TH, the lower
sensitivity to load transient. The TRE function can be
disable by setting the Rtre which is connecting to DL/TRE
pin to less than 25 kW. For system component saving, it is
usually set as default value, that is, Rtre is open (w75 kW)
and internal TRE_TH is 300 mV typical.
Forced PWM Operation (FPWM Mode)
The device is operating as force PWM mode if EN_SKIP
voltage keeps at between VEN_FPWM and VEN_SKIP.
Under this mode, the low−side gate driver signal is forced to
be the complement of the high−side gate driver signal. This
mode allows reverse inductor current, in such a way that it
provides more accurate voltage regulation and better (fast)
transient response. During the soft−start operation, the
NCP5217A automatically runs as FPWM mode regardless
of the EN_SKIP setting at either FPWM or SKIP mode to
make sure to have smooth power up.
Pulse Skipping Operation (Skip Mode)
The device is operating as skip mode if EN_SKIP voltage
keeps above VEN_SKIP. However, in medium and high
load
range,
the
controller
still
runs
in
continuous−conduction−mode (CCM) of which it behaves
exactly same as FPWM mode. In light load range, the
controller will go to skip mode which is similar to
conventional constant on−time scheme.
Top to Bottom SWN, Vo, Transient Signal
Figure 15. Transient Response with TRE Disable
Transient Response Enhancement (TRE)
For the conventional PWM controller in CCM, the fastest
response time is one switching cycle in the worst case. To
http://onsemi.com
9
NCP5217A
The Figure 18 shows how to realize the AVP function. A
current path is connecting to the FB pin via Rocp resistor.
Rocp is not actually for AVP function, indeed, Rocp is used
for OCP threshold value programming. The IDRP/OCP pin
has dual functions: OCP programming and AVP. At the
IDRP/OCP pin, conceptually there is a current source which
is modulated by current sensing amplifier.
The output voltage Vo with AVP is:
V O + V O0 * I O * R LL
(eq. 1)
Where Io is the load current, no load output voltage Vo0 is
set by the external divider that is
ǒ
V O0 + 1 )
Top to Bottom SWN, Vo, Transient Signal
Figure 16. Transient Response with TRE Enable
Rt
Ǔ*V
Rb
(eq. 2)
ref
The load line impendence RLL is given by:
R LL + DCR * Gain_CS * Rt *
Adaptive Voltage Positioning (AVP)
For applications with fast transient currents, adaptive
voltage positioning can reduce peak−to−peak output voltage
deviations due to load transients. With the use of AVP, the
output voltage allows to have some controlled sag when load
current is applied. Upon removal of the load, the output
voltage returns no higher than the original level, just
allowing one output transient peak to be cancelled over a
load step up and release cycle. The amount of AVP is
adjustable.
The behaviors of the Vo waveforms with or without AVP
are depicted at Figure 17.
Rs2
Rs1 ) Rs2
(eq. 3)
Where DCR is inductor DC resistance. Gain_CS is a gain
from [(CS+) − (CS−)] to IDRP Gain (At electrical table, the
symbol is IDRP_GAIN), the typical value is 0.525 mA/mV.
The AVP function can be easily disable by shorting the
Rocp resistor into ground.
From the equation we can see that the value of “top”
resistor Rt can affect the RLL, so it is recommended to define
the amount of RLL FRIST before defining the compensation
component value. And if the user wants to fine tune the
compensation network for optimizing the transient
performance, it is NOT recommend to adjust the value of Rt.
Otherwise, both transient performance and AVP amount
will be affected. The following diagram shows the typical
waveform of AVP. Note that the Rt typical value should be
above 1 kW.
Vo With AVP
Vo Without AVP
Figure 17. Adaptive Voltage Positioning
Vo
Rt
FB
+
COMP
Rb
Rocp
+
− Vref
IDRP
IDRP/OCP
L
Rs1
CS+
DCR
Cs
Rs2
CS−
Top to Bottom: SWN, Vo, Transient Signal (0.5−10−0.5A)
+
Figure 19. Typical waveform of AVP
Gi
Figure 18. Configuration for AVP function
http://onsemi.com
10
NCP5217A
Overcurrent Protection (OCP)
It should be noted that there are two configurations for
Rocp resistor. If Adaptor Voltage Position (AVP) is used, the
Rocp should be connected to FB pin. If AVP is not used, the
Rocp should be connected to ground. At the IDRP/OCP pin,
there is a constant current(24 mA typ.) flowing out during the
programming stage at system start up. This is used to sense
the voltage level which is developed by a resistor Rocp so as
to program the overcurrent detection threshold voltage. For
typical application, the Vocth is set as default value (40 mV
typ) by setting Rocp = 0 W, or directly short the IDRP/OCP
pin to ground. It has the benefit of saving one component at
application board. For other programming values of Vocth,
please refer to the electrical table of “Overcurrent Protection
Setting” section.
The NCP5217A protects power system if over current
event occurs. The current is continuously monitored by the
differential current sensing circuit. The current limit
threshold voltage VOCSET can be programmed by resistor
Rocset connecting at the IDRP/OCP pin. However, fixed
default VOCSET can be achieved if Rocset is less than 2 kW.
If the inductor current exceeds the current threshold
continuously, the top gate driver will be turned off cycle by
cycle. If it happens over consecutive 16 clock cycles time
(16 x 1/fSW), the device is latched off such that top and
bottom gate drivers are off. EN resets or power recycle the
device can exit the fault. The following diagram shows the
typical behavior of OCP.
Guidelines for selecting OCP Trip Component
1. Choose the value of Rocp for Vocth selection.
(typical is 0 W for Vocth = 40 mV typical)
2. Define the DC value of OCP trip point (IOCP_DC)
that you want. The typical value is 1.5 to 1.8 times
of maximum loading current. For example, if
maximum loading is 10 A, then set OCP trip point
at 15 A to 18 A.
3. Calculate the inductor peak current (Ipk)which is
estimated by the equation:
I pk + I OCP_DC )
Figure 20. Overcurrent Protection
The NCP5217A uses lossless inductor current sensing for
acquiring current information. In addition, the threshold
OCP voltage can be programmed to some desired value by
setting the programming resistor Rocp.
Rt
FB
+
IDRP/OCP
Rs1
L
DCR
Cs
k+
+
− Vref
Rs1 +
Rs2
Rt
+
CS−
FB
+
IDRP
Rs1
DCR
Cs
CS+
Rs2
CS−
+
(eq. 6)
k * Rs1
1*k
(eq. 7)
V OCth
DCR
(eq. 8)
Overvoltage Protection (OVP)
IDRP/OCP
L
L
k * DCR * Cs
I pk +
COMP
+
− Vref
(eq. 5)
8. Hence, all the current sense components Rs1, Rs2,
Cs have been found for target IOCP_DC.
9. If Rs2 is not used (open), set k = 1, at that
moment, the Ipk will be restricted by:
Gi
Rb
Rocp
I pk * DCR
Rs2 +
Without AVP
Vo
V OCth
7. Calculate Rs2 value by the equation:
IDRP
Rocp
CS+
(eq. 4)
5. Select Cs value between 100 nF to 200 nF.
Typically, 100 nF will be used.
6. Calculate Rs1 value by the equation:
COMP
Rb
2 * V IN * f SW * L O
4. Check with inductor datasheet to find out the value
of inductor DC resistance DCR, then calculate the
RS1, RS2 dividing factor k based on the equation:
Top to Bottom : SWN, Vo, PGOOD, Io
Vo
V O * (V IN * V O)
When VFB voltage is above 115% (typical) of the nominal
VFB voltage for over 1.5 ms blanking time, an OV fault is set.
At that moment, the top gate drive is turned off and the
bottom gate drive is turned on until the VFB below lower
under voltage (UV) threshold and bottom gate drive is
Gi
With AVP
Figure 21. OCP Configurations
http://onsemi.com
11
NCP5217A
turned on again whenever VFB goes above upper UV
threshold. EN resets or power recycle the device can exit the
fault. The following diagram shows the typical waveform
when OVP event occurs.
consecutive 8 clock cycles, an UV fault is set and the device
is latched off such that both top and bottom gate drives are
off. EN resets or power recycle the device can exit the fault.
Top to Bottom : SWN, DL, Vo, PGOOD
Figure 23. Undervoltage Protection
Top to Bottom : SWN, Vo, PGOOD
Figure 22. Overvoltage Protection
Thermal Shutdown
The IC will shutdown if the die temperature exceeds
150°C. The IC restarts operation only after the junction
temperature drops below 125°C.
Undervoltage Protection (UVP)
An UVP circuit monitors the VFB voltage to detect under
voltage event. The undervoltage limit is 80% of the nominal
VFB voltage. If the VFB voltage is below this threshold over
+5V
V5
PGND
R1
R11
1
R2
OFF = Skip Mode
1−2 = FCCM Mode
EN_SKIP
3−2 = Disable
LED1
R4
R5
LED2
EN_SKIP
2 CS+
R6
C3
PGOOD
M5
4 COMP
5 FB
6 PGOOD
C4
R7
BST
DH 13
3 CS−/Vo
C2
AGND
7
R9
R8
VIN
R10
14
VIN_GND
M2
C14
L1
J2 R15
1
2
3
1−2 = OCP Only
3−2 = OCP + AVP
VCC 10
PGND
8
M1
R14
IDRP/OCP 11
DL/TRESET 9
R13
C20
SWN 12
NCP5217A
R3
C1
J100
Default = Open
C7 C8 C9 C11
U1
3 SW1
J100
COMP
D1
R12
2
1
+5V
J1
Default = Close
J1
C5
R19
M4
C10
R20
C15
C17
C18
D3
VOUT
PGND
BNC1
C6
R17
R18
M3
R16
PGND
R21
AGND
AGND
PGND
Figure 24. Demo Board Schematic
http://onsemi.com
12
D2
NCP5217A
DEMO BOARD BILL OF MATERIAL BOM (See next tables for compensation network and power stage)
Designator
Qty
Description
Value
Footprint
Manufacturer
Manufacturer P/N
U1
1
R1
1
Single Synchronous Stepdown Controller
−
QFN14 (Special)
ON Semiconductor
NCP5217MNR2G
Chip Resistor, $5%
75k
0603
Panasonic
R2
ERJ3GEYJ753V
1
Chip Resistor, $5%
10k
0603
Panasonic
ERJ3GEYJ103V
R3, R4
2
Chip Resistor, $5%
1k
0603
Panasonic
ERJ3GEYJ102V
R5
1
Chip Resistor, $5%
100k
0603
Panasonic
ERJ3GEYJ104V
R10
1
Chip Resistor, $5%
5.6
0603
Panasonic
ERJ3GEYJ5R6V
R11
1
Chip Resistor, $5%
20k
0603
Panasonic
ERJ3GEYJ203V
R12
1
Chip Resistor, $5%
5.6
0603
Panasonic
ERJ3GEYJ5R6V
R13, R14, R15,
R17
4
Chip Resistor, $5%
0
0603
Panasonic
ERJ3GEYJR00V
R16, R18, R21,
3
−
DNP
−
−
−
C1
1
MLCC Chip Capacitor, $10%
Temp Char: X7R, Rate V = 50 V
100 nF
0603
Panasonic
ECJ1VB1E104K
C5, C6
2
MLCC Chip Capacitor, $20%
Temp Char: X5R, Rate V=25V
1 mF
0805
Panasonic
ECJ2FB1E105M
C7,C8,C9, C11
4
MLCC Chip Capacitor, $20%
Temp Char: X5R, Rate V = 25 V
4.7 mF
0805
Panasonic
ECJ2FB1E475M
C10, C13, C17,
C18
4
−
DNP
−
−
−
C20
1
MLCC Chip Capacitor, $20%
Temp Char: X7R, Rate V = 50 V
0.1 mF
0603
Panasonic
ECJ1VB1E104M
D1
1
30V Schottky Diode
Vf=0.35V @ 10mA
−
SOT−23
ON Semiconductor
BAT54LT1
D2, D3
1
−
DNP
−
−
−
M5
1
Power MOSFET 50 V, 200 mA
Single N−Channel
−
SOT−23
ON Semiconductor
BSS138L
LED1
1
Surface Mount LED (Green)
−
0805
LUMEX
SML−LX0805GC−TR
LED2
1
Surface Mount LED (Red)
−
0805
LUMEX
SML−LX0805IC−TR
J1, J100, COMP,
EN_SKIP,
PGOOD, AGND
6
Pin Header Single Row
−
Pitch=2.54 mm
Betamax
2211S−40G−F1
V5, VIN,
VIN_GND,
PGND, PGND,
PGND, VOUT
7
Terminal Pin
−
f = 1.74 mm
HARWIN
H2121−01
BNC1
1
SMB SMT Straight Socket
−
5.1 x 5.1 mm
Tyco Electronics
RS Stock# 420−5401
SW1
1
2P ON−OFF−ON toggle switch
−
3 pins, 2.54 mm pitch
C&K
RS Stock# 249−2984
Manufacturer #
7203SYCQE
http://onsemi.com
13
NCP5217A
DEMO BOARD BILL OF MATERIAL (Vo = 1.1 V, Io = 15 A)
Item
Compensation Network
Power Stage & Current Sense
Component
Value
Tol
Footprint
Manufacturer
Manufacturer P/N
R6
100k
1%
0603
Panasonic
ERJ3EKF1003V
R7
560
1%
0603
Panasonic
ERJ3EKF5600V
R8
3k
1%
0603
Panasonic
ERJ3EKF3001V
R9
8k
1%
0603
Panasonic
ERJ3EKF8001V
C2
470 pF
10%
0603
Panasonic
ECJ1VC1H471K
C3
15 pF
10%
0603
Panasonic
ECJ1VC1H150K
C4
1.2 nF
10%
0603
Panasonic
ECJ1VB1H122K
M1, M2
−
−
SOIC8−FL
ON Semiconductor
NTMFS4821N
M3, M4
−
−
SOIC8−FL
ON Semiconductor
NTMFS4847N
L1
1 mH
20%
10x11.5mm
Cyntec
PCMC104T−1R0MN
R19
6.2k
1%
0603
Panasonic
ERJ3EKF6201V
R20
9.1k
1%
0603
Panasonic
ERJ3EKF9101V
C14, C15
330 mF
6 mW
20%
7343
Panasonic
EEFSX0D331XR
Sanyo
2TPLF330M6
DEMO BOARD BILL OF MATERIAL (Vo = 1.5 V, Io = 8 A)
Item
Compensation Network
Power Stage &
Current Sense
Component
Value
Tol
Footprint
Manufacturer
Manufacturer P/N
R6
82k
1%
0603
Panasonic
ERJ3EKF8202V
R7
1k
1%
0603
Panasonic
ERJ3EKF1001V
R8
5k
1%
0603
Panasonic
ERJ3EKF5001V
R9
5.71k
1%
0603
Panasonic
ERJ3EKF5711V
C2
270 pF
10%
0603
Panasonic
ECJ1VC1H271K
C3
15 pF
10%
0603
Panasonic
ECJ1VC1H150K
C4
560 pF
10%
0603
Panasonic
ECJ1VB1H561K
M1, M3
−
−
SO8
ON Semiconductor
NTMS4705N
M2, M4
DNP
−
L1
Power Stage &
Current Sense
−
−
−
10x11.5mm
Cyntec
PCMC104T−1R0MN
13x14x4.9mm
WE
744315120
ERJ3EKF4301V
1 mH
20%
R19
4.3k
1%
0603
Panasonic
R20
DNP
−
−
−
−
C14, C15
220 mF
12 mW
20%
7343
Panasonic
EEFUD0D221XR
Sanyo
2R5TPL220MC
http://onsemi.com
14
NCP5217A
DEMO BOARD BILL OF MATERIAL (Vo = 1.8 V, Io = 8 A)
Item
Compensation Network
Power Stage & Current Sense
Component
Value
Tol
Footprint
Manufacturer
Manufacturer P/N
R6
150k
1%
0603
Panasonic
ERJ3EKF1503V
R7
1k
1%
0603
Panasonic
ERJ3EKF1001V
R8
5k
1%
0603
Panasonic
ERJ3EKF5001V
R9
4K
1%
0603
Panasonic
ERJ3EKF4001V
C2
220pF
10%
0603
Panasonic
ECJ1VC1H221K
C3
18pF
10%
0603
Panasonic
ECJ1VC1H180K
C4
560pF
10%
0603
Panasonic
ECJ1VB1H561K
M1, M3
−
−
SO8
ON Semi
NTMS4705N
M2, M4
DNP
−
−
−
−
L1
1.2uH
20%
10x11.5mm
TOKO
FDA1254−1R2M=P3
R19
4.3K
1%
0603
Panasonic
ERJ3EKF4301V
R20
DNP
−
−
−
−
C14, C15
220uF
20%
7343
Panasonic
EEFUD0D221XR
Sanyo
2R5TPL220MC
12mW
http://onsemi.com
15
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
QFN14 3.5x3.5, 0.5P
CASE 485AL−01
ISSUE O
DATE 03 OCT 2007
SCALE 2:1
D
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
PIN 1
LOCATION
2X
2X
EDGE OF PACKAGE
A
B
L
L1
DETAIL A
OPTIONAL PIN
CONSTRUCTION
E
EXPOSED Cu
0.15 C
TOP VIEW
0.15 C
L
(A3)
0.10 C
DETAIL A
OPTIONAL PIN
CONSTRUCTION
MOLD CMPD
ÉÉÉ
ÉÉÉ
DETAIL B
OPTIONAL PIN
CONSTRUCTION
A
A1
SIDE VIEW
SEATING
PLANE
14X
7
K
9
L
E2
e
2
1
14
14X
e2
b
0.10 C A B
BOTTOM VIEW
0.05 C
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
3.50 BSC
1.90
2.15
3.50 BSC
1.90
2.15
0.50 BSC
1.50 BSC
0.20
−−−
0.30
0.50
0.00
0.03
XXXXX
XXXXX
ALYWG
G
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to device
data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be
present.
D2
DETAIL A
14X
C
DIM
A
A1
A3
b
D
D2
E
E2
e
e2
K
L
L1
GENERIC
MARKING DIAGRAM*
0.08 C
NOTE 4
DETAIL B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
SOLDERING FOOTPRINT*
2X
NOTE 3
3.80
14X 0.63
14X
0.36
2X
2.12
0.50
PITCH
1.50 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON25416D
QFN14 3.5 X 3.5, 0.5P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
工商网监
湘ICP备2023018690号
