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NCP6343BFCCT1G

NCP6343BFCCT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    WLCSP15

  • 描述:

    IC REG BUCK PROG 3A 15WLCSP

  • 数据手册
  • 价格&库存
NCP6343BFCCT1G 数据手册
NCP6343 Configurable 3.0 A Step Down Converter The NCP6343 is a synchronous buck converter optimized to supply the different sub systems of portable applications powered by one cell Li−Ion or three cell Alkaline/NiCd/NiMH batteries. The device is able to deliver up to 3.0 A, with programmable output voltage from 0.6 V to 1.4 V. It can share the same output rail with another DCDC and works as a transient load helper. Operation at a 3 MHz switching frequency allows the use of small components. Synchronous rectification and automatic PWM/PFM transitions improve overall solution efficiency. The NCP6343 is in a space saving, low profile 1.99 x 1.34 mm CSP−15 package. www.onsemi.com MARKING DIAGRAM Features x = P: Prototype = Blank: 1.225 V − 2.0 A = A: 1.225 V − 3.0 A = B: 1.225 V − 3.0 A = D: 1.18125 V − 3.0 A = S: 1.050 V − 3.0 A = V: 1.225 V − 3.0 A = M: 0.925 V − 3.0 A A = Assembly Location L = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package • Input Voltage Range from 2.3 V to 5.5 V: Battery and 5 V Rail • • • • • • • • • • • • 6343x ALYWW G WLCSP15 CASE 567GB Powered Applications Programmable Output Voltage: 0.6 V to 1.4 V in 6.25 mV Steps Modular Output Stage Drive Strength for Increased Efficiency Depending on the Output Current 3 MHz Switching Frequency with On Chip Oscillator Uses 470 nH Inductor and 22 mF Capacitors for Optimized Footprint and Solution Thickness PFM/PWM Operation for Optimum Increased Efficiency Ultra Low 0.8 mA Off Mode Current Low 35 mA Quiescent Current I2C Control Interface with Interrupt and Dynamic Voltage Scaling Support Thermal Protections and Temperature Management Transient Load Helper: Share the Same Rail with Another DCDC Small 1.99 x 1.34 mm / 0.4 mm Pitch CSP Package These are Pb−Free Devices Pb−Free indicator, G or microdot (G), may or may not be present PINOUT DIAGRAM 1 NCP6343 2 3 A PVIN SW PGND B PVIN SW PGND C PVIN PGND PGND D AVIN EN SDA E AGND SCL FB Typical Applications • Smartphones • Webtablets NCP6343 Supply Input AVIN D1 AGND E1 A1 B1 C1 Core References Oscillator A2 B2 Thermal Protection Processor I@C Control Interface EN D2 SDA D3 SCL E2 SW 470 nH 22 uF A3 B3 C3 C2 Operating Mode Control I@C Supply Input 10 uF DCDC 3.0 A Enable Control Input PVIN DCDC 3 MHz Controller E3 PGND FB Sense 22 uF (Top View) 15−Pin 0.40 mm pitch WLCSP Figure 1. Typical Application Circuit This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2015 November, 2017 − Rev. 8 Core Processor Memory 1 ORDERING INFORMATION See detailed ordering and shipping information on page 30 of this data sheet. Publication Order Number: NCP6343/D CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 SUPPLY INPUT AVIN AGND ANALOG GROUND PVIN Core 3.0 A DC−DC Thermal Protection MODULAR DRIVER POWER INPUT SW SWITCH NODE Output Voltage Monitoring ENABLE CONTROL INPUT EN Operating Mode Control PROCESSOR I2C SCL SDA Logic Control Interrupt I2C 3 MHz DC−DC Converter Controller Sense CONTROL INTERFACE PGND POWER GROUND FB FEEDBACK Figure 2. Simplified Block Diagram www.onsemi.com 2 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 1 NCP6343 2 3 A PVIN SW PGND B PVIN SW PGND C PVIN PGND PGND D AVIN EN SDA E AGND SCL FB Figure 3. Pin Out (Top View) Table 1. PIN FUNCTION DESCRIPTION Pin Name Type Description REFERENCE D1 AVIN Analog Input Analog Supply. This pin is the device analog and digital supply. Could be connected directly to the VIN plane or to a dedicated 1.0 mF ceramic capacitor. Must be equal to PVIN. E1 AGND Analog Ground Analog Ground. Analog and digital modules ground. Must be connected to the system ground. CONTROL AND SERIAL INTERFACE D2 EN Digital Input Enable Control. Active high will enable the part. There is an internal pull down resistor on this pin. E2 SCL Digital Input I2C interface Clock line. There is an internal pull down resistor on this pin; could be left open if not used D3 SDA Digital Input/Output I2C interface Bi−directional Data line. There is an internal pull down resistor on this pin; could be left open if not used Switch Supply. These pins must be decoupled to ground by a 10 mF ceramic capacitor. It should be placed as close as possible to these pins. All pins must be used with short heavy connections. Must be equal to AVIN. DCDC CONVERTER A1, B1, C1 PVIN Power Input A2, B2 SW Power Output Switch Node. These pins supply drive power to the inductor. Typical application uses 0.470 mH inductor; refer to application section for more information. All pins must be used with short heavy connections. A3, B3, C3, C2 PGND Power Ground Switch Ground. This pin is the power ground and carries the high switching current. High quality ground must be provided to prevent noise spikes. To avoid high−density current flow in a limited PCB track, a local ground plane that connects all PGND pins together is recommended. Analog and power grounds should only be connected together in one location with a trace. E3 FB Analog Input Feedback Voltage input. Must be connected to the output capacitor positive terminal with a trace, not to a plane. This is the positive input to the error amplifier. www.onsemi.com 3 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 2. MAXIMUM RATINGS Rating Symbol Value Unit VA −0.3 to + 6.0 V VDG IDG −0.3 to VA +0.3 ≤ 6.0 10 V mA Human Body Model (HBM) ESD Rating (Note 1) ESD HBM 2000 V Machine Model (MM) ESD Rating (Note 1) ESD MM 150 V ESD CDM 2000 V Analog and power pins: AVIN, PVIN, SW, FB Digital pins: SCL, SDA, EN: Input Voltage Input Current Charged Device Model (CDM) ESD Rating (Note 1) Latch Up Current: (Note 2) Digital Pins All Other Pins ILU Storage Temperature Range TSTG −65 to + 150 °C Maximum Junction Temperature TJMAX −40 to +150 °C MSL Level 1 Moisture Sensitivity (Note 3) mA ±10 ±100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection and passes the following ratings: Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114. Machine Model (MM) ±150 V per JEDEC standard: JESD22−A115. Charged Device Model (CDM) ±2.0 kV per JEDEC standard: JESD22−C101 Class IV. 2. Latch up Current per JEDEC standard: JESD78 class II. 3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. Table 3. OPERATING CONDITIONS (Note 4) Parameter Symbol AVIN, PVIN Min AVIN = PVIN 2.3 Typ Max Unit 5.5 V TA Ambient Temperature Range −40 25 +85 °C TJ Junction Temperature Range (Note 5) −40 25 +125 °C CSP−15 on Demo−board − 65 − °C/W RqJA Thermal Resistance Junction to Ambient (Note 6) PD Power Dissipation Rating (Note 7) TA ≤ 85°C − 615 − mW PD Power Dissipation Rating (Note 7) TA = 65°C − 923 − mW − 0.47 − mH L 4. 5. 6. 7. Power Supply Conditions Inductor for DCDC converter (Note 4) Co Output Capacitor for DCDC Converter (Note 4) 28 − 55 mF Cin Input Capacitor for DCDC Converter (Note 4) 4.7 − − mF Including de−ratings (Refer to the Application Information section of this document for further details) The thermal shutdown set to 150°C (typical) avoids potential irreversible damage on the device due to power dissipation. The RqJA is dependent of the PCB heat dissipation. The maximum power dissipation (PD) is dependent by input voltage, maximum output current and external components selected. R qJA + 125 * T A PD www.onsemi.com 4 NCP6343 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE Table 4. ELECTRICAL CHARACTERISTICS (Note 9) Min and Max Limits apply for TA = −40°C to +85°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Typical values are referenced to TA = +25°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit SUPPLY CURRENT: Pins AVIN – PVINx IQ PWM Operating quiescent current PWM DCDC active in Forced PWM no load − 12 20 mA IQ PFM Operating quiescent current PFM DCDC active in Auto mode no load − minimal switching − 35 70 mA ISLEEP Product sleep mode current EN high, DCDC off or EN low and Sleep_Mode high VIN = 2.5 V to 5.5 V − 7 15 mA Product in off mode EN and Sleep_Mode low VIN = 2.5 V to 5.5 V − 0.8 5 mA 2.3 − 5.5 V Ipeak[1..0] = 00/01 (Note 10) 2.0 − − A Ipeak[1..0] = 10 (Note 10) 2.5 − − Ipeak[1..0] = 11 (Note 10) 3.0 − − Forced PWM mode No load −1 − 1 Forced PWM mode, VIN range, IOUT up to IOUTMAX (Note 10) −1 − 1 Auto mode, VIN range, IOUT up to IOUTMAX (Note 10) −1 − 2 2.7 3 3.3 MHz IOFF DCDC CONVERTER PVIN IOUTMAX DVOUT Input Voltage Range Maximum Output Current Output Voltage DC Error % FSW Switching Frequency RONHS P−Channel MOSFET On Resistance From PVIN to SW (all Modules) VIN = 5.0 V − 36 64 mW RONLS N−Channel MOSFET On Resistance From SW to PGND (all Modules) VIN = 5.0 V − 19 40 mW IPK Peak Inductor Current Open loop – Ipeak[1..0] = 00/01 2.5 2.9 3.3 A Open loop – Ipeak[1..0] = 10 3.0 3.4 3.8 Open loop – Ipeak[1..0] = 11 3.5 3.9 4.3 DCLOAD Load Regulation IOUT from 0 A to IOUTMAX (Note 10) − −0.2 − %/A DCLINE Line Regulation IOUT = 3 A 2.3 V ≤ VIN ≤ 5.5 V (Note 10) − 0 − % ACLOAD Transient Load Response tr = ts = 100 ns Load step 1.3 A (Note 10) − ±50 − mV ACLINE Transient Line Response tr = ts = 10 ms 100 mA Load (Note 10) D Maximum Duty Cycle ±30 mV − 100 − % tSTART Turn on time Time from EN transitions from Low to High to 95% of Output Voltage (DELAY[2..0] = 000b and DVSup = 0) − 80 100 ms tSTART Turn on time Time from EN transitions from Low to High to 95% of Output Voltage (DELAY[2..0] = 000b and DVSup = 1) − 425 550 ms DCDC Active Output Discharge Vout = 1.225 V − 25 35 W RDISDCDC 8. Devices that use non−standard supply voltages which do not conform to the intent I2C bus system levels must relate their input levels to the VDD voltage to which the pull−up resistors RP are connected. 9. Refer to the Application Information section of this data sheet for more details. 10. Guaranteed by design and characterized. www.onsemi.com 5 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 4. ELECTRICAL CHARACTERISTICS (Note 9) Min and Max Limits apply for TA = −40°C to +85°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Typical values are referenced to TA = +25°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit EN VIH High input voltage 1.05 − − V VIL Low input voltage − − 0.4 V 0.5 − 4.5 ms − 0.05 1.00 mA 1.7 − 5.0 V TFTR IPD Digital input X Filter EN rising and falling DBN_Time = 01 (Note 10) Digital input X Pull−Down (input bias current) I2C VI2CINT High level at SCL/SCA line VI2CIL SCL, SDA low input voltage SCL, SDA pin (Notes 8, 10) − − 0.5 V VI2CIH SCL, SDA high input voltage SCL, SDA pin (Notes 8, 10) 0.8 * VI2CINT − − V VI2COL SDA low output voltage ISINK = 3 mA (Note 10) − − 0.4 V I2C clock frequency (Note 10) − − 3.4 MHz FSCL TOTAL DEVICE VUVLO Under Voltage Lockout VIN falling − − 2.3 V VUVLOH Under Voltage Lockout Hysteresis VIN rising 60 − 200 mV − 150 − °C − 135 − °C TSD TWARNING TPWTH TSDH TWARNINGH TPWTH H Thermal Shut Down Protection Warning Rising Edge − 105 − °C Thermal Shut Down Hysteresis − 30 − °C Thermal warning Hysteresis − 15 − °C − 6 − °C Pre − Warning Threshold I2C default value Thermal pre−warning Hysteresis 8. Devices that use non−standard supply voltages which do not conform to the intent the VDD voltage to which the pull−up resistors RP are connected. 9. Refer to the Application Information section of this data sheet for more details. 10. Guaranteed by design and characterized. www.onsemi.com 6 I2C bus system levels must relate their input levels to CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C DCDC = 1.225 V, Ipeak = 3.9 A (Unless otherwise noted). L = 0.47 mH PIFE20161B – Cout = 2x 22 mF 0603, Cin = 4.7 mF 0603. 95 95 VIN = 5.0 V VIN = 3.6 V 85 90 EFFICIENCY (%) EFFICIENCY (%) 90 +25°C VIN = 2.9 V 80 75 −40°C +85°C 85 80 75 70 70 0 1000 2000 3000 1 10 100 1000 10,000 IOUT (mA) IOUT (mA) Figure 4. Efficiency vs. ILOAD and VIN VOUT = 1.39375 V, SPM6530 Inductor Figure 5. Efficiency vs. ILOAD and Temperature VOUT = 1.39375 V, SPM6530 Inductor 95 95 +25°C 90 VIN = 5.0 V EFFICIENCY (%) EFFICIENCY (%) 90 85 VIN = 3.6 V VIN = 2.9 V 80 75 +85°C 85 80 75 70 70 0 1000 2000 3000 1 10 100 1000 10,000 IOUT (mA) IOUT (mA) Figure 6. Efficiency vs. ILOAD and VIN VOUT = 1.225 V, SPM6530 Inductor Figure 7. Efficiency vs. ILOAD and Temperature VOUT = 1.225 V, SPM6530 Inductor 90 90 85 +25°C 85 VIN = 5.0 V EFFICIENCY (%) EFFICIENCY (%) −40°C 80 75 VIN = 3.6 V VIN = 2.9 V 70 −40°C 80 +85°C 75 70 65 65 60 60 0 1000 2000 3000 1 10 100 1000 10,000 IOUT (mA) IOUT (mA) Figure 8. Efficiency vs. ILOAD and VIN VOUT = 0.60 V, SPM6530 Inductor Figure 9. Efficiency vs. ILOAD and Temperature VOUT = 0.60 V, SPM6530 Inductor www.onsemi.com 7 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 95 95 90 90 EFFICIENCY (%) EFFICIENCY (%) TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C DCDC = 1.225 V, Ipeak = 3.9 A (Unless otherwise noted). L = 0.47 mH PIFE20161B – Cout = 2x 22 mF 0603, Cin = 4.7 mF 0603. VIN = 5.0 V 85 80 VIN = 3.6 V VIN = 2.9 V 75 +25°C −40°C 85 +85°C 80 75 70 70 0 1000 2000 3000 1 10 100 1000 10,000 IOUT (mA) IOUT (mA) Figure 10. Efficiency vs. ILOAD and VIN VOUT = 1.225 V, PIFE20161B Inductor Figure 11. Efficiency vs. ILOAD and Temperature VOUT = 1.225 V, PIFE20161B Inductor 1.0 1.237 VOUT ACCURACY (%) VOUT ACCURACY (V) VIN = 3.6 V 1.231 VIN = 2.9 V 1.225 VIN = 5.0 V 1.219 0.5 +25°C +85°C 0 −40°C −0.5 −1.0 1.213 0 1000 2000 0 3000 1000 2000 3000 ILOAD (mA) ILOAD (mA) Figure 12. VOUT Accuracy vs. ILOAD and VIN VOUT = 1.225 V Figure 13. VOUT Accuracy vs. ILOAD and Temperature, VOUT = 1.225 V, VIN = 3.6 V 1.410 0.610 VOUT ACCURACY (V) VOUT ACCURACY (V) 1.405 0.605 VIN = 3.6 V VIN = 2.9 V 0.600 VIN = 5.0 V 0.595 VIN = 3.6 V 1.400 VIN = 2.9 V 1.395 VIN = 5.0 V 1.390 1.385 1.380 0.590 0 1000 2000 3000 0 1000 2000 3000 ILOAD (mA) ILOAD (mA) Figure 14. VOUT Accuracy vs. ILOAD and VIN VOUT = 0.60 V Figure 15. VOUT Accuracy vs. ILOAD and VIN VOUT = 1.39375 V www.onsemi.com 8 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C DCDC = 1.225 V, Ipeak = 3.9 A (Unless otherwise noted). L = 0.47 mH PIFE20161B – Cout = 2x 22 mF 0603, Cin = 4.7 mF 0603. 35 75 65 30 +85°C 25 +25°C 20 −40°C 55 RONLS (mW) RONHS (mW) +85°C +25°C 45 −40°C 15 35 10 25 2.5 3.0 3.5 4.0 4.5 5.0 2.5 5.5 3.0 3.5 4.0 4.5 5.0 VIN (V) VIN (V) Figure 16. HSS RON vs. VIN and Temperature Figure 17. LSS RON vs. VIN and Temperature 5.5 15 5 4 2 +85°C IOFF (mA) IOFF (mA) 10 3 +85°C +25°C −40°C 5 +25°C 1 −40°C 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 2.5 3.0 3.5 4.0 4.5 5.0 VIN (V) VIN (V) Figure 18. IOFF vs. VIN and Temperature Figure 19. ISLEEP vs. VIN and Temperature 100 5.5 20 IQ PWM (mA) IQ (mA) 80 60 +25°C +85°C 40 15 +85°C −40°C 20 −40°C +25°C 10 0 2.5 3.0 3.5 4.0 4.5 5.0 2.5 5.5 3.0 3.5 4.0 4.5 5.0 VIN (V) VIN (V) Figure 20. IQ PFM vs. VIN and Temperature Figure 21. IQ PWM vs. VIN and Temperature www.onsemi.com 9 5.5 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C DCDC = 1.225 V, Ipeak = 3.9 A (Unless otherwise noted). L = 0.47 mH PIFE20161B – Cout = 2x 22 mF 0603, Cin = 4.7 mF 0603. 600 600 500 Enter PWM Enter PWM ISWOP (mA) ISWOP (mA) 500 400 Exit PWM 400 Exit PWM 300 300 200 200 2.5 3.0 3.5 4.0 4.5 5.0 5.5 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) VIN (V) Figure 22. Switchover Point VOUT = 1.225 V Figure 23. Switchover Point VOUT = 1.39375 V 17 mV 6.2 mV 3.01 MHz Figure 24. PWM Ripple Figure 25. PFM Ripple 85.8 ms Normal Power−Up Figure 26. Normal Power Up, VOUT = 1.225 V www.onsemi.com 10 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 TYPICAL OPERATING CHARACTERISTICS AVIN = PVIN = 3.6 V, TJ = +25°C DCDC = 1.225 V, Ipeak = 3.9 A (Unless otherwise noted). L = 0.47 mH PIFE20161B – Cout = 2x 22 mF 0603, Cin = 4.7 mF 0603. 51 mV 50 mV 43 mV 44 mV 0.1 A / 1.4 A / 0.1 A 0.1 A / 1.4 A / 0.1 A Figure 27. Transient Load 0.1 − 1.4 A Transient Line 4.2 − 3.6 V Auto Mode Figure 28. Transient Load 0.1 − 1.4 A Transient Line 3.6 − 4.2 V Auto Mode 52 mV 51 mV 42 mV 48 mV 1 A / 1.3 A / 1 A 1 A / 1.3 A / 1 A Figure 29. Transient Load 1.0 − 2.3 A Transient Line 4.2 − 3.6 V Auto Mode Figure 30. Transient Load 1.0 − 2.3 A Transient Line 3.6 − 4.2 V Auto Mode 41 mV 48 mV 38 mV 41 mV 1 A / 1.3 A / 1 A 1 A / 1.3 A / 1 A Figure 31. Fast Transient Load 0.1 − 1.4 A Auto Mode Figure 32. Fast Transient Load 1.0 − 2.3 A Auto Mode www.onsemi.com 11 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 DETAILED OPERATING DESCRIPTION Detailed Descriptions Forced PWM The NCP6343 is voltage mode stand alone synchronous DC to DC converter optimized to supply different sub systems of portable applications powered by one cell Li−Ion or three cells Alkaline/NiCd/NiMh. The IC can deliver up to 3 A at an I2C selectable voltage ranging from 0.60 V to 1.40 V. It can share the same output rail with another DCDC and works as a transient load helper without sinking current on shared rail. A 3 MHz switching frequency allows the use of smaller output filter components. Synchronous rectification and automatic PWM/PFM transitions improve overall solution efficiency. Forced PWM is also configurable. Operating modes, configuration, and output power can be easily selected either by programming a set of registers using an I2C compatible interface capable of operation up to 3.4 MHz. Default I2C settings are factory programmable. The NCP6343 can be programmed to only use PWM and disable the transition to PFM if so desired. (PWM bits of COMMAND register). Output Stage NCP6343 is a high output current capable integrated DC to DC converter. To supply such a high current, the internal MOSFETs need to be large. The output stage is composed of 8 modules that can be individually Enabled / Disabled by setting the MODULE register. Inductor Peak Current Limitation NCP6343 is a 2.0 A to 3.0 A output current capable. During normal operation, peak current limitation will monitor and limit the current through the inductor. This current limitation is particularly useful when size and/or height constrain inductor power. The user can select peak current to keep inductor within its specifications. The peak current can be set by writing IPEAK[1..0] bits in LIMCONF register. DC to DC Buck Operation The converter is a synchronous rectifier type with both high side and low side integrated switches. Neither external transistor nor diodes are required for NCP6343 operation. Feedback and compensation network are also fully integrated. The converter can operate in two different modes: PWM and PFM. The transition between PWM/PFM modes can occur automatically or the switcher can be placed in forced PWM mode by I2C programming (PWM bits of COMMAND register). Table 5. Ipeak VALUES IPEAK[1..0] PWM (Pulse Width Modulation) Operating Mode Default Inductor Peak Current (A) 00 2.9 A for 2.0 A output current 01 2.9 A for 2.0 A output current 10 3.4 A for 2.5 A output current 11 3.9 A for 3.0 A output current Output Voltage In medium and high load conditions, NCP6343 operates in PWM mode from a fixed clock and adapts its duty cycle to regulate the desired output voltage. In this mode, the inductor current is in CCM (Continuous Current Mode) and the voltage is regulated by PWM. The internal N−MOSFET switch operates as synchronous rectifier and is driven complementary to the P−MOSFET switch. In CCM, the lower switch (N−MOSFET) in a synchronous converter provides a lower voltage drop than the diode in an asynchronous converter, which provides less loss and higher efficiency. Output voltage is set internally by integrated resistor bridge and error amplifier that drives the PWM/PFM controller. No extra component is needed to set output voltage. However, writing in the Vout[6..0] bits of the PROG register will change settings. Output voltage level can be programmed in the 0.6 V to 1.4 V range by 6.25 mV steps. Under Voltage Lock Out (UVLO) NCP6343 core does not operate for voltages below the Under Voltage lock Out (UVLO) level. Below UVLO threshold, all internal circuitry (both analog and digital) is held in reset. NCP6343 operation is guaranteed down to VUVLO when battery voltage is dropping off. To avoid erratic on / off behavior, a maximum 200 mV hysteresis is implemented. Restart is guaranteed at 2.5 V when VBAT voltage is recovering or rising. PFM (Pulse Frequency Modulation) Operating Mode In order to save power and improve efficiency at low loads the NCP6343 operates in PFM mode as the inductor drops into DCM (Discontinuous Current Mode). The upper FET on time is kept constant and the switching frequency is variable. Output voltage is regulated by varying the switching frequency which becomes proportional to loading current. As it does in PWM mode, the internal N−MOSFET operates as synchronous rectifier after each P−MOSFET on−pulse. When load increases and current in inductor becomes continuous again, the controller automatically turns back to PWM mode. Thermal Management Thermal shutdown (TSD) The thermal capability of IC can be exceeded due to step down converter output stage power level. A thermal protection circuitry is therefore implemented to prevent the IC from damage. This protection circuitry is only activated www.onsemi.com 12 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Active Output Discharge when the core is in active mode (output voltage is turned on). During thermal shut down, output voltage is turned off. When NCP6343 returns from thermal shutdown, it can re−start in 2 different configurations depending on REARM bit in the LIMCONF register (see register description section): • If REARM = 0 then NCP6343 does not re−start after TSD. To restart, an EN pin toggle is required. • If REARM = 1, NCP6343 re−starts with register values set prior to thermal shutdown. A Thermal shut down interrupt is raised upon this event. Thermal shut down threshold is set at 150°C (typical) when the die temperature increases and, in order to avoid erratic on / off behavior, a 30°C hysteresis is implemented. After a typical 150°C thermal shut down, NCP6343 will resume to normal operation when the die temperature cools to 120°C. To make sure that no residual voltage remains in the power supply rail, an active discharge path can ground the NCP6343 output voltage. For maximum flexibility, this feature can be easily disabled or enabled with DISCHG bit in PGOOD register However the discharged path is activated during the first 100 ms after battery insertion. Enabling The EN pin controls NCP6343 start up: EN pin Low to High transition starts the power up sequencer. If EN is made low, the DC to DC converter is turned off and device enters: • In Sleep Mode if Sleep_Mode I2C bit is high, • In Off Mode if Sleep_Mode I2C bit is low. When EN pin is set to a high level, the DC to DC converter can be enabled / disabled depending of the state of the EN bit of the PROG register: If EN I2C bit is high, DCDC is activated, If EN I2C is low the DC to DC converter is turned off and device enters: • In Sleep Mode if Sleep_Mode I2C bit is high, • In Off Mode if Sleep_Mode I2C bit is low. A built in pull down resistor disables the device when this pin is left unconnected or not driven. Thermal Warnings In addition to the TSD, the die temperature monitoring will flag potential die over temperature. A thermal warning and thermal pre−warning are implemented which can inform the processor through two different interrupts (accessible via I2C) that NCP6343 is close to its thermal shutdown so that preventive measures to cool down die temperature can be taken by software. The Warning threshold is set by hardware to 135°C typical when the die temperature increases. The Pre−Warning threshold is set by default to 105°C, but can be changed by user by setting the TPWTH[1..0] bits in the LIMCONF register. Power Up Sequence (PUS) In order to power up the circuit, the input voltage AVIN has to rise above the VUVLO threshold. This triggers the internal core circuitry power up which is the “Wake Up Time” (including “Bias Time”). This delay is internal and cannot be bypassed. EN pin transition within this delay corresponds to the “Initial power up sequence” (IPUS): AVIN UVLO POR EN VOUT ÏÏÏÏÏ ÏÏÏÏÏ DELAY[2..0] ~ 50 us 32 us Wake up Time Init Time DVS ramp Time Figure 33. Initial Power Up Sequence www.onsemi.com 13 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Normal, Quick and Fast Power Up Sequence In addition a user programmable delay will also take place between end of Core circuitry turn on (Wake Up Time and Bias Time) and Init time: The DELAY[2..0] bits of TIME register will set this user programmable delay with a 2 ms resolution. With default delay of 0 ms, the NCP6343 IPUS takes roughly 85 ms, means DCDC output voltage will be ready within 110 ms. NOTE: During the Wake Up time, the I2C interface is not active. Any I2C request to the IC during this time period will result in a NACK reply. The previous description applies only when the EN transitions during the internal core circuitry power up (Wake up and calibration time). Otherwise 3 different cases are possible: Enabling the part by setting EN pin from Off Mode will result in “Normal power up sequence” (NPUS, with DELAY;[2..0]). Enabling the part by setting EN pin from Sleep Mode will result in “Quick power up sequence” (QPUS, with DELAY;[2..0]). Enabling the part by setting EN bits of the PROG register (whereas EN is already high results in “Fast power up sequence” (FPUS, without DELAY[2..0]). AVIN UVLO POR EN O F F DELAY[2..0] VOUT M 20 us 32 us TFTR Bias Time Init Time O D E DVS ramp Time Figure 34. Normal Power Up Sequence (EN pin) AVIN UVLO POR EN S L E E P VOUT M O D E DELAY[2..0] 32 us TFTR Init Time DVS ramp Time Figure 35. Quick Power Up Sequence (EN pin) AVIN UVLO POR EN I@C S L E E P VOUT M O D E 32 us Init Time DVS ramp Time Figure 36. Fast Power Up Sequence (EN bit) www.onsemi.com 14 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 • In Auto mode when output voltage has not to be In addition the delay set in DELAY[2..0] bits in TIME register will apply only for the EN pins turn ON sequence (NPUS and QPUS). discharged. Note that approximately 30 ms is needed to transition from PFM mode to PWM mode. Note that the sleep mode needs about 150 ms to be established. nV DC to DC converter Shut Down When shutting down the device, no shut down sequence is required. Output voltage is disabled and, depending on the DISCHG bit state of PGOOD register, output may be discharged. Shutdown is initiated by either grounding the EN pin (Hardware Shutdown) or by clearing the EN I2C bit (Software shutdown) in PROG register. In hardware shutdown (EN = 0), the internal core is still active and I2C accessible. NCP6343 shuts internal core down when AVIN falls below UVLO. nt V1 Figure 38. DVS in Auto Mode Diagram Power Good To indicate the output voltage level is established, a power good signal is available. The power good signal is high when the channel is off and goes low when enabling the channel. Once the output voltage reaches 95% of the expected output level, the power good logic signal becomes high (ACK_PG, SEN_PG bits). During operation when the output drops below 90% of the programmed level the power good logic signal goes low, indicating a power failure. When the voltage rises again to above 95% the power good signal goes high again. During a positive DVS sequence, when target voltage is higher than initial voltage, the Power Good logic signal will be set low during output voltage ramping and transition to high once the output voltage reaches 95% of the target voltage. When the target voltage is lower than the initial voltage, Power Good logic signals will remain at high level during transition. Power Good signal during normal operation can be disabled by clearing the PGDCDC bit in PGOOD register. Power Good operation during DVS can be controlled by setting / clearing the bit PGDVS in PGOOD register Dynamic Voltage Scaling (DVS) This converter supports dynamic voltage scaling (DVS) allowing the output voltage to be reprogrammed via I2C commands and provides the different voltages required by the processor. The change between set points is managed in a smooth fashion without disturbing the operation of the processor. When programming a higher voltage, output raises with controlled dV/dt defined by DVSup bit in TIME register (default 6.25 mV/0.166 ms). When programming a lower voltage, output will decrease in equidistant steps defined by DVSdown[1..0] bits in TIME register (default 6.25 mV/2.666 ms). DVS sequence is automatically initiated by changing output voltage settings. The DVS transition mode can be changed with the DVSMODE bit in COMMAND register: • In forced PWM mode when accurate output voltage control is needed. DCDC_EN DCDC V2 Internal Reference Output Voltage V2 Internal Reference 95% 90% 32 us min 3.5− 14 us Output Voltage nV 3.5 us 3.5− 14 us PG nt Figure 39. Power Good Signal V1 Figure 37. DVS in Forced PWM Mode Diagram www.onsemi.com 15 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Interrupt Individual bits generating interrupts will be set to 1 in the INT_ACK register (I2C read only registers), indicating the interrupt source. INT_ACK register is automatically reset by an I2C read. The INT_SEN register (read only register) contains real time indicators of interrupt sources. When the host reads the INT_ACK registers the interrupt register INT_ACK is cleared. Figure 40 is UVLO event example: INT_SEN/INT_MSK/INT_ACK and an I2C read access behavior. The interrupt controller continuously monitors internal interrupt sources, generating an interrupt signal when a system status change is detected (dual edge monitoring). Table 6. INTERRUPT SOURCES Interrupt Name TSD Description Thermal Shut Down TWARN Thermal Warning TPREW Thermal Pre Warning UVLO Under Voltage Lock Out IDCDC DCDC current Over / below limit PG Power Good UVLO SEN_UVLO ACK_UVLO I@C access on INT_ACK read read read read Figure 40. Interrupt Operation Example Configurations Default output voltages, enables, DCDC modes, current limit and other parameters can be factory programmed upon request. The default configuration pre−defined is depicted below: Table 7. DEFAULT CONFIGURATIONS Configuration NCP6343 NCP6343A NCP6343B I2C 0x1C 12h xxh 00h 0x14 12h xxh 02h 0x1C 12h xxh 01h VOUT 1.225 V 1.225 V 1.225 V MODE Auto mode Forced PWM mode Auto mode DVS Up Timing 6.25mV/0.166ms 6.25mV/0.166ms 6.25mV/0.166ms Default IPEAK 2.9 A 3.9 A 3.9 A Default address PID product id. RID revision id. FID feature id. Marking OPN 6343 6343A 6343B NCP6343FCT1G NCP6343AFCCT1G NCP6343BFCCT1G Table 8. DEFAULT CONFIGURATIONS Configuration NCP6343D NCP6343AV NCP6343S NCP6343M Default I2C address PID product id. RID revision id. FID feature id. 0x14 12h xxh 03h 0x14 12h xxh 02h 0x10 12h xxh 00h 0x18 12h xxh 00h VOUT 1.18125 V 1.225 V 1.050 V 0.925 V MODE Forced PWM mode Auto mode Auto mode Auto mode DVS Up Timing 6.25mV/0.166ms 6.25mV/2.666ms 6.25mV/2.666ms 6.25mV/2.666ms Default IPEAK 3.9 A 3.9 A 3.9 A 3.9 A 6343D 6343V 6343S 6343M NCP6343DFCCT1G NCP6343AVFCCT1G NCP6343SFCCT1G NCP6343MFCCT1G Marking OPN www.onsemi.com 16 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 I2C Compatible Interface NCP6343 can support a subset of I2C protocol Detailed below. I2C Communication Description FROM MCU to NCPxxxx FROM NCPxxxx to MCU START IC ADDRESS 1 ACK 0 ACK ACK DATA 1 DATA n /ACK STOP READ OUT FROM PART STOP WRITE INSIDE PART 1 à READ /ACK START IC ADDRESS ACK DATA 1 DATA n ACK If PART does not Acknowledge, the /NACK will be followed by a STOP or Sr. If PART Acknowledges, the ACK can be followed by another data or Stop or Sr 0 à WRITE Figure 41. General Protocol Description • In case of read operation, the NCP6343 will output the The first byte transmitted is the Chip address (with the LSB bit set to 1 for a read operation, or set to 0 for a Write operation). The following data will be: • In case of a Write operation, the register address (@REG) pointing to the register we want to write in followed by the data we will write in that location. The writing process is auto−incremental, so the first data will be written in @REG, the contents of @REG are incremented and the next data byte is placed in the location pointed to by @REG + 1 ..., etc. data from the last register that has been accessed by the last write operation. Like the writing process, the reading process is auto−incremental. Read Out from Part The Master will first make a “Pseudo Write” transaction with no data to set the internal address register. Then, a stop then start or a Repeated Start will initiate the read transaction from the register address the initial write transaction has pointed to: FROM MCU to NCPxxxx FROM NCPxxxx to MCU SETS INTERNAL REGISTER POINTER START IC ADDRESS 0 ACK REGISTER ADDRESS ACK STOP 0 à WRITE START IC ADDRESS 1 ACK ACK DATA 1 REGISTER ADDRESS VALUE DATA n /ACK STOP REGISTER ADDRESS + (n − 1) VALUE n REGISTERS READ 1 à READ Figure 42. Read Out from Part The first WRITE sequence will set the internal pointer to the register we want access to. Then the read transaction will start at the address the write transaction has initiated. www.onsemi.com 17 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Transaction with Real Write then Read With Stop Then Start FROM MCU to NCPxxxx FROM NCPxxxx to MCU SETS INTERNAL REGISTER POINTER START IC ADDRESS ACK 0 WRITE VALUE IN REGISTER REG0 ACK REGISTER REG0 ADDRESS WRITE VALUE IN REGISTER REG0 + (n − 1) ACK REG VALUE ACK REG + (n − 1) VALUE STOP n REGISTERS WRITE 0 à WRITE START IC ADDRESS 1 ACK ACK DATA 1 /ACK DATA k STOP REGISTER ADDRESS + (n − 1) + (k − 1) VALUE REGISTER REG + (n − 1) VALUE k REGISTERS READ 1 à READ Figure 43. Write Followed by Read Transaction Write In Part Write operation will be achieved by only one transaction. After chip address, the MCU first data will be the internal register we want access to, then following data will be the data we want to write in Reg, Reg + 1, Reg + 2, ...., Reg +n. Write n Registers: FROM MCU to NCPxxxx FROM NCPxxxx to MCU WRITE VALUE IN REGISTER REG0 SETS INTERNAL REGISTER POINTER START IC ADDRESS 0 ACK ACK REGISTER REG0 ADDRESS WRITE VALUE IN REGISTER REG0 + (n − 1) ACK REG VALUE ACK REG + (n − 1) VALUE STOP n REGISTERS WRITE 0 à WRITE Figure 44. Write In n Registers I2C Address NCP6343 has four available I2C address selectable by factory settings (ADD0 to ADD3). Different address settings can be generated upon request to ON Semiconductor. The default address is set to 38h / 39h since the NCP6343 supports 7−bit address only and ignores A0. Table 9. I2C ADDRESS I2C Address ADD0 (NCP6343S) Hex A7 A6 A5 A4 A3 A2 A1 A0 W 0x20 R 0x21 0 0 1 0 0 0 0 R/W Add ADD1 (NCP6343AV, NCP6343D) 0x10 W 0x28 R 0x29 0 0 1 Add ADD2 (NCP6343M) 1 0 0 0x14 W 0x30 R 0x31 0 0 1 Add ADD3 (default) (NCP6343, NCP6343B) 0 − 1 − 0 0 0 0x18 W 0x38 R 0x39 0 0 Add 1 1 0x1C www.onsemi.com 18 R/W R/W − 1 0 0 R/W − NCP6343 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE Register Map Table 10 describes I2C registers. Registers can be: R RC RW Reserved Spare Read only register Read then Clear Read and Write register Address is reserved and register is not physically designed Address is reserved and register is physically designed Table 10. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343) Add. Register Name Type Def. 00h INT_ACK RC 00h Interrupt register Function 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Product Identification 04h RID R Metal Revision Identification Reserved for future use 05h FID R 00h 06h to 10h − − − Feature Identification (trim) 11h PROG RW E4h Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 19h Enabling and DVS timings (trim) 14h COMMAND RW 00h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW 23h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Reserved for future use Table 11. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343A) Add. Register Name Type Def. Function 00h INT_ACK RC 00h Interrupt register 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Reserved for future use Product Identification 04h RID R Metal Revision Identification 05h FID R 02h 06h to 10h − − − 11h PROG RW E4h Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 19h Enabling and DVS timings (trim) 14h COMMAND RW 80h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW E3h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Feature Identification (trim) Reserved for future use www.onsemi.com 19 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 12. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343B) Add. Register Name Type Def. Function 00h INT_ACK RC 00h Interrupt register 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Product Identification 04h RID R Metal Revision Identification 05h FID R 01h 06h to 10h − − − 11h PROG RW E4h Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 19h Enabling and DVS timings (trim) 14h COMMAND RW 00h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW E3h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Reserved for future use Feature Identification (trim) Reserved for future use Table 13. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343D) Add. Register Name Type Def. 00h INT_ACK RC 00h Interrupt register Function 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Product Identification 04h RID R Metal Revision Identification Reserved for future use 05h FID R 03h 06h to 10h − − − Feature Identification (trim) 11h PROG RW DDh Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 19h Enabling and DVS timings (trim) 14h COMMAND RW 80h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW E3h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Reserved for future use www.onsemi.com 20 NCP6343 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE Table 14. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343AV) Add. Register Name Type Def. Function 00h INT_ACK RC 00h Interrupt register 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Product Identification 04h RID R Metal Revision Identification 05h FID R 02h 06h to 10h − − − 11h PROG RW E4h Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 1Dh Enabling and DVS timings (trim) 14h COMMAND RW 00h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW E3h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Reserved for future use Feature Identification (trim) Reserved for future use Table 15. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343S) Add. Register Name Type Def. 00h INT_ACK RC 00h Interrupt register Function 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Product Identification 04h RID R Metal Revision Identification Reserved for future use 05h FID R 00h 06h to 10h − − − Feature Identification (trim) 11h PROG RW C8h Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 1Dh Enabling and DVS timings (trim) 14h COMMAND RW 00h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW E3h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Reserved for future use www.onsemi.com 21 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 16. I2C REGISTERS MAP DEFAULT CONFIGURATION (NCP6343M) Add. Register Name Type Def. Function 00h INT_ACK RC 00h Interrupt register 01h INT_SEN R 00h Sense register (real time status) 02h − − − 03h PID R 12h Product Identification 04h RID R Metal Revision Identification 05h FID R 00h 06h to 10h − − − 11h PROG RW B4h Output voltage settings and (trim) 12h PGOOD RW 00h Power good and active discharge settings (partial trim) 13h TIME RW 1Dh Enabling and DVS timings (trim) 14h COMMAND RW 00h Enabling and Operating mode Command register (partial trim) 15h MODULE RW 80h Active module count settings 16h LIMCONF RW E3h Reset and limit configuration register (partial trim) 17h to 1Fh − − − Reserved for future use 20h to FFh − − − Reserved. Test Registers Reserved for future use Feature Identification (trim) Reserved for future use www.onsemi.com 22 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Registers Description Table 17. INTERRUPT ACKNOWLEDGE REGISTER Name: INTACK Address: 00h Type: RC Default: 00000000b (00h) Trigger: Dual Edge [D7..D0] D7 D6 D5 D4 D3 D2 D1 D0 ACK_TSD ACK_TWARN ACK_TPREW Spare = 0 Spare= 0 ACK_UVLO ACK_IDCDC ACK_PG Bit Bit Description ACK_PG Power Good Sense Acknowledgement 0: Cleared 1: DCDC Power Good Event detected ACK_IDCDC DCDC Over Current Sense Acknowledgement 0: Cleared 1: DCDC Over Current Event detected ACK_UVLO Under Voltage Sense Acknowledgement 0: Cleared 1: Under Voltage Event detected ACK_TPREW Thermal Pre Warning Sense Acknowledgement 0: Cleared 1: Thermal Pre Warning Event detected ACK_TWARN Thermal Warning Sense Acknowledgement 0: Cleared 1: Thermal Warning Event detected ACK_TSD Thermal Shutdown Sense Acknowledgement 0: Cleared 1: Thermal Shutdown Event detected Table 18. INTERRUPT SENSE REGISTER Name: INTSEN Address: 01h Type: R Default: 00000000b (00h) Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 SEN_TSD SEN_TWARN SEN_TPREW Spare = 0 Spare = 0 SEN_UVLO SEN_IDCDC SEN_PG Bit SEN_PG Bit Description Power Good Sense 0: DCDC Output Voltage below target 1: DCDC Output Voltage within nominal range SEN _IDCDC DCDC over current sense 0: DCDC output current is below limit 1: DCDC output current is over limit SEN _UVLO Under Voltage Sense 0: Input Voltage higher than UVLO threshold 1: Input Voltage lower than UVLO threshold SEN _TPREW Thermal Pre Warning Sense 0: Junction temperature below thermal pre−warning limit 1: Junction temperature over thermal pre−warning limit SEN _TWARN Thermal Warning Sense 0: Junction temperature below thermal warning limit 1: Junction temperature over thermal warning limit SEN _TSD Thermal Shutdown Sense 0: Junction temperature below thermal shutdown limit 1: Junction temperature over thermal shutdown limit www.onsemi.com 23 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 19. PRODUCT ID REGISTER Name: PID Address: 03h Type: R Default: 00010010b (12h) Trigger: N/A Reset on N/A D7 D6 D5 D4 D3 D2 D1 D0 PID_7 PID_6 PID_5 PID_4 PID_3 PID_2 PID_1 PID_0 Table 20. REVISION ID REGISTER Name: RID Address: 04h Type: R Default: Metal Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 Spare = 0 Spare = 0 Spare = 0 Spare = 0 RID_3 RID_2 RID_1 RID_0 Bit Bit Description RID[3..0] Revision Identification 0000: First silicon 0100: Optimized silicon 1000: Production Table 21. FEATURE ID REGISTER Name: FID Address: 05h Type: R Default: Metal Trigger: N/A D7 D6 D5 D4 D3 D2 D1 D0 Spare = 0 Spare = 0 Spare = 0 Spare = 0 FID_3 FID_2 FID_1 FID_0 Bit FID[3..0] Bit Description Feature Identification 0000: Default Configuration Table 22. DC to DC VOLTAGE PROG REGISTER Name: PROG Address: 11h Type: RW Default: See Register map Trigger: N/A D7 D6 D5 D4 D3 D2 EN Vout[6..0] Bit Vout[6..0] EN Bit Description Sets the DC to DC converter output 0000000b = 600 mV − 1111111b = 1393.75 mV (steps of 6.25 mV) EN Pin Gating 0: Disabled 1: Enabled www.onsemi.com 24 D1 D0 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 23. POWER GOOD REGISTER Name: PGOOD Address: 12h Type: RW Default: See Register map Trigger: N/A D7 Spare = 0 D6 D5 D4 D3 D2 D1 D0 Spare = 0 Spare = 0 DISCHG Spare = 0 Spare = 0 PGDVS PGDCDC Bit Bit Description PGDCDC Power Good Enabling 0 = Disabled 1 = Enabled PGDVS Power Good Active On DVS 0 = Disabled 1 = Enabled DISCHG Active discharge bit Enabling 0 = Discharge path disabled 1 = Discharge path enabled Table 24. TIMING REGISTER Name: TIME Address: 13h Type: RW Default: See Register map Trigger: N/A D7 D6 D5 D4 DELAY[2..0] D3 DVSdown[1..0] Bit DBN_Time[1..0] Bit Description EN debounce time 00 = No debounce 01 = 1−2 ms 10 = 2−3 ms 11 = 3−4 ms DVSup DVS Speed for up DVS 0 = 6.25 mV step / 0.166 ms 1 = 6.25 mV step / 2.666 ms DVSdown[1..0] DVS Speed for down DVS 00 = 6.25 mV step / 0.333 ms 01 = 6.25 mV step / 0.666 ms 10 = 6.25 mV step / 1.333 ms 11 = 6.25 mV step / 2.666 ms DELAY[2..0] Delay applied upon enabling (ms) 000b = 0 ms − 111b = 14 ms (Steps of 2 ms) www.onsemi.com 25 D2 DVSup D1 D0 DBN_Time[1..0] CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Table 25. COMMAND REGISTER Name: COMMAND Address: 14h Type: RW Default: See Register map Trigger: N/A D7 PWM D6 D5 D4 D3 D2 D1 D0 Spare = 0 DVSMODE Sleep_Mode Spare = 0 Spare = 0 Spare = 0 Spare = 0 Bit Bit Description Sleep_Mode Sleep mode 0 = Low Iq mode when EN low 1 = Force product in sleep mode DVSMODE DVS transition mode selection 0 = Auto 1 = Forced PWM PWM DCDC Operating mode 0 = Auto 1 = Forced PWM Table 26. OUTPUT STAGE MODULE SETTINGS REGISTER Name: MODULE Address: 15h Type: RW Default: See Register map Trigger: N/A D7 D6 D5 D4 MODUL[3..0] D3 D2 D1 D0 Spare =0 Spare =0 Spare =0 Spare =0 Bit Bit Description MODUL [3..0] Number of modules 0000 = 1 Module − 0111 ~ 1111 = 8 Modules (Steps of 1) Table 27. LIMITS CONFIGURATION REGISTER Name: LIMCONF Adress: 16h Type: RW Default: See Register map Trigger: N/A D7 D6 IPEAK[1..0] D5 D4 TPWTH[1..0] D3 D2 D1 D0 Spare = 0 FORCERST RSTSTATUS REARM Bit REARM Bit Description Rearming of device after TSD 0: No re−arming after TSD 1: Re−arming active after TSD with no reset of I2C registers: new power−up sequence is initiated with previously programmed I2C registers values RSTSTATUS Reset Indicator Bit 0: Must be written to 0 after register reset 1: Default (loaded after Registers reset) FORCERST Force Reset Bit 0 = Default value. Self cleared to 0 1: Force reset of internal registers to default TPWTH[1..0] Thermal pre−Warning threshold settings 00 = 83°C 01 = 94°C 10 = 105°C 11 = 116°C IPEAK Inductor peak current settings 00 = 2.9 A (Iload 2.0 A) 01 = 2.9 A (Iload 2.0 A) 10 = 3.4 A (Iload 2.5 A) 11 = 3.9 A (Iload 3.0 A) www.onsemi.com 26 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 APPLICATION INFORMATION NCP6243 Supply Input AVIN D1 AGND E1 A1 B1 C1 Core References Oscillator A2 B2 Thermal Protection Processor I2C Control Interface EN SDA SCL A3 B3 C3 C2 D2 Operating Mode Control I2C D3 E2 Supply Input 10 mF DCDC 3.0 A Enable Control Input PVIN E3 DCDC 3 MHz Controller SW 470 nH 22 mF PGND FB Core Processor Memory 22 mF Sense Figure 45. Typical Application Schematic Output Filter Design Considerations Components Selection The output filter introduces a double pole in the system at a frequency of: Inductor Selection f LC + The inductance of the inductor is determined by given peak−to−peak ripple current IL_PP of approximately 20% to 50% of the maximum output current IOUT_MAX for a trade−off between transient response and output ripple. The inductance corresponding to the given current ripple is: 1 2 @ p @ ǸL @ C NCP6343 internal compensation network is optimized for a typical output filter comprising a 470 nH inductor and 22 mF capacitor as describes in the basic application schematic is described by Figure 16. L+ Voltage Sensing Considerations ǒVIN * VOUTǓ @ VOUT V IN @ f SW @ I L_PP The selected inductor must have high enough saturation current rating to be higher than the maximum peak current that is In order to regulate power supply rail, NCP6343 should sense its output voltage. Thanks to the FB pin, the IC can support two sensing methods: • Normal case: the voltage sensing is achieved close to the output capacitor. In that case, FB is connected to the output capacitor positive terminal (voltage to regulate). • Remote sensing: In remote sensing, the power supply rail sense is made close to the system powered by the NCP6343. The voltage to system is more accurate, since PCB line impedance voltage drop is within the regulation loop. In that case, we recommend connecting the FB pin to the system decoupling capacitor positive terminal. I L_MAX + I OUT_MAX ) I L_PP 2 The inductor also needs to have high enough current rating based on temperature rise concern. Low DCR is good for efficiency improvement and temperature rise reduction. Table 28 shows recommended. Table 28. INDUCTOR SELECTION Supplier Part # Value (mH) Size (mm) (L x l x T) DC Rated Current (A) DCR Max at 255C (mW) Cyntec PIFE20161B−R47−MS−11 0.47 2.0 x 1.6 x 1.2 3.9 36 Cyntec PIFE25201T−R47−MS−11 0.47 2.5 x 2.0 x 1.0 4.5 41 TOKO DFE201612P−H−R47M 0.47 2.0 x 1.6 x 1.2 4.3 33 TOKO DFE201610R−H−R47N 0.47 2.0 x 1.6 x 1.0 3.3 48 TOKO DFE201612R−H−R47N 0.47 2.0 x 1.6 x 1.2 3.8 40 TDK TFM252010A−R47M 0.47 2.5 x 2.0 x 1.0 4.5 30 TDK SPM6530T−R47M170 0.47 7.1 x 6.5 x 3.0 20 4 www.onsemi.com 27 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 Output Capacitor Selection The input capacitor also needs to be sufficient to protect the device from over voltage spike, and normally at least 4.7 mF capacitor is required. The input capacitor should be located as close as possible to the IC. All PGNDs are connected together to the ground terminal of the input cap which then connects to the ground plane. All PVIN are connected together to the Vbat terminal of the input cap which then connects to the Vbat plane. The output capacitor selection is determined by output voltage ripple and load transient response requirement. For high transient load performance high output capacitor value must be used. For a given peak−to−peak ripple current IL_PP in the inductor of the output filter, the output voltage ripple across the output capacitor is the sum of three components as below. V OUT_PP [ V OUT_PP(C) ) V OUT_PP(ESR) ) V OUT_PP(ESL) Electrical Layout Considerations Good electrical layout is a key to make sure proper operation, high efficiency, and noise reduction. Electrical layout guidelines are: • Use wide and short traces for power paths (such as PVIN, VOUT, SW, and PGND) to reduce parasitic inductance and high−frequency loop area. It is also good for efficiency improvement. • The device should be well decoupled by input capacitor and input loop area should be as small as possible to reduce parasitic inductance, input voltage spike, and noise emission. • SW node should be a large copper, but compact because it is also a noise source. • It would be good to have separated ground planes for PGND and AGND and connect the two planes at one point. Try best to avoid overlap of input ground loop and output ground loop to prevent noise impact on output regulation. • Arrange a “quiet” path for output voltage sense, and make it surrounded by a ground plane. Where VOUT_PP(C) is a ripple component by an equivalent total capacitance of the output capacitors, VOUT_PP(ESR) is a ripple component by an equivalent ESR of the output capacitors, and VOUT_PP(ESL) is a ripple component by an equivalent ESL of the output capacitors. In PWM operation mode, the three ripple components can be obtained by V OUT_PP(C) + I L_PP 8 @ C @ f SW , and V OUT_PP(ESR) +I L_PP@ESR V OUT_PP(ESL) + ESL @ V IN ESL ) L and the peak−to−peak ripple current is I L_PP + ǒV IN * VOUTǓ @ VOUT V IN @ f SW @ L In applications with all ceramic output capacitors, the main ripple component of the output ripple is VOUT_PP(C). So that the minimum output capacitance can be calculated regarding to a given output ripple requirement VOUT_PP in PWM operation mode. C MIN + I L_PP 8 @ V OUT_PP @ f SW Thermal Layout Considerations Good PCB layout helps high power dissipation from a small package with reduced temperature rise. Thermal layout guidelines are: • A four or more layers PCB board with solid ground planes is preferred for better heat dissipation. • More free vias are welcome to be around IC to connect the inner ground layers to reduce thermal impedance. • Use large area copper especially in top layer to help thermal conduction and radiation. • Use two layers for the high current paths (PVIN, PGND, SW) in order to split current in two different paths and limit PCB copper self heating. Input Capacitor Selection One of the input capacitor selection guides is the input voltage ripple requirement. To minimize the input voltage ripple and get better decoupling in the input power supply rail, ceramic capacitor is recommended due to low ESR and ESL. The minimum input capacitance regarding to the input ripple voltage VIN_PP is C IN_MIN + I OUT_MAX @ (D * D 2) V IN_PP @ f SW where D+ V OUT V IN In addition, the input capacitor needs to be able to absorb the input current, which has a RMS value of I IN_RMS + I OUT_MAX @ ǸD * D 2 www.onsemi.com 28 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 (See demo board example Figure 47) Figure 46. Layout Recommendation Legend: In blue are top layer planes and wires In white are layer1 plane and wires (just below top layer) Big circles gray are normal vias Small circles gray are top to layer1 vias Figure 47. Demo Board Example PGND directly connected to Cin input capacitor, and then connected to the GND plane: Local mini planes used on the top layer (blue) and layer just below top layer (white) with laser vias. SW connected to the Lout inductor with trace between input capacitor terminals on top layer (blue) and local mini planes on the layer just below top layer (white) with laser vias. Input capacitor placed as close as possible to the IC. PVIN directly connected to Cin input capacitor, and then connected to the Vin plane. Local mini planes used on the top layer (blue) and layer just below top layer (white) with laser vias. AVIN connected to the Vin plane just after the capacitor. AGND directly connected to the GND plane. www.onsemi.com 29 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 ORDERING INFORMATION Marking Package Comment Shipping† 6343 WLCSP15 without Back Coating (Pb–Free) I2C address 0x1C (0011100x b) 3000 / Tape & Reel NCP6343AFCCT1G 6343A WLCSP15 with Back Coating (Pb–Free) I2C address 0x14 (0010100x b) 3000 / Tape & Reel NCP6343BFCCT1G 6343B WLCSP15 with Back Coating (Pb–Free) I2C address 0x1C (0011100x b) 3000 / Tape & Reel NCP6343DFCCT1G 6343D WLCSP15 with Back Coating (Pb–Free) I2C address 0x14 (0010100x b) 3000 / Tape & Reel NCP6343AVFCCT1G 6343V WLCSP15 with Back Coating (Pb–Free) I2C address 0x14 (0010100x b) 3000 / Tape & Reel NCP6343SFCCT1G 6343S WLCSP15 with Back Coating (Pb–Free) I2C address 0x10 (0010000x b) 3000 / Tape & Reel NCP6343MFCCT1G 6343M WLCSP15 with Back Coating (Pb–Free) I2C address 0x18 (0011000x b) 3000 / Tape & Reel Device NCP6343FCT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Demo Board Available: The NCP6343FGEVB/D evaluation board that configures the device in typical application to supply constant voltage. www.onsemi.com 30 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE NCP6343 PACKAGE DIMENSIONS ÈÈ PIN A1 REFERENCE WLCSP15, 1.34x1.99 CASE 567GB ISSUE B D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B DIM A A1 A2 b D E e E 0.10 C 2X 0.10 C 2X TOP VIEW MILLIMETERS MIN MAX 0.60 −−− 0.17 0.23 0.33 0.39 0.24 0.29 1.34 BSC 1.99 BSC 0.40 BSC A2 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.05 C NOTE 3 15X A1 C SIDE VIEW SEATING PLANE A1 PACKAGE OUTLINE e b 0.05 C A B 0.03 C E e 0.40 PITCH D 15X C 0.40 PITCH B 0.25 DIMENSIONS: MILLIMETERS A 1 2 3 BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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