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NCP715MX25TBG

NCP715MX25TBG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    XFDFN6

  • 描述:

    IC REG LINEAR 2.5V 50MA 6XDFN

  • 数据手册
  • 价格&库存
NCP715MX25TBG 数据手册
DATA SHEET www.onsemi.com Linear Voltage Regulator Ultra-Low Iq, Wide Input Voltage, Low Dropout MARKING DIAGRAMS XDFN6 CASE 711AE 50 mA 1 XX MG G NCP715 The NCP715 is 50 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. Features • Operating Input Voltage Range: 2.5 V to 24 V • Fixed Voltage Options Available: 1.2 V to 5.3 V • Ultra Low Quiescent Current: Max. 4.7 mA Over Full Load and • • • • • • Temperature ±2% Accuracy Over Full Load, Line and Temperature Variations PSRR: 52 dB at 100 kHz Noise: 190 mVRMS from 200 Hz to 100 kHz Thermal Shutdown and Current Limit protection Available in XDFN6 1.5 x 1.5 mm, SC−70 (SC−88A) and TSOP−5 Packages These are Pb−Free Devices XX MG G SC−70−5 (SC−88A) CASE 419A 5 1 TSOP−5 CASE 483 5 XXX MG G 1 XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 19 of this data sheet. Typical Applications • Portable Equipment • Communication Systems 2.5 V < Vout < 24 V 1 mF Ceramic OUT IN 1.2 V < Vout < 5.3 V NCP715 NC GND NC 1 mF Ceramic Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2016 September, 2022 − Rev. 7 1 Publication Order Number: NCP715/D NCP715 IN THERMAL SHUTDOWN UVLO BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT EEPROM GND Figure 2. Simplified Block Diagram Figure 3. Pin Description PIN FUNCTION DESCRIPTION Pin No. SC−70 XDFN6 TSOP−5 Pin Name 5 6 3 OUT Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to ground to assure stability. 1 2 4 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 2 3 1 GND Power supply ground. 3 4 5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. − 5 − N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 4 1 2 IN Description Input pin. A small capacitor is needed from this pin to ground to assure stability. www.onsemi.com 2 NCP715 ABSOLUTE MAXIMUM RATINGS Rating Input Voltage (Note 1) Output Voltage Output Short Circuit Duration Maximum Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Symbol Value Unit VIN −0.3 to 24 V VOUT −0.3 to 6 V tSC Indefinite s TJ(MAX) 150 °C TA −40 to 125 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 ESD Charged Device Model tested per EIA/JESD22−C101E Latch up Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, SC−70 Thermal Resistance, Junction−to−Air RqJA 390 °C/W Thermal Characteristics, XDFN6 Thermal Resistance, Junction−to−Air RqJA 260 °C/W Thermal Characteristics, TSOP−5 Thermal Resistance, Junction−to−Air RqJA 250 °C/W www.onsemi.com 3 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 1.2 V −40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT ≤ 10 mA VIN 10 mA< IOUT < 50 mA Output Voltage Accuracy Typ Max Unit 2.5 24 V 3.0 24 2.5 V < VIN < 24 V, 0 < IOUT ≤ 10 mA VOUT 1.164 1.2 1.236 V 3.0 V < VIN < 24 V, 0 mA < IOUT < 50 mA VOUT 1.164 1.2 1.236 V 3.0 V < VIN < 24 V, 1 mA < IOUT < 50 mA, −20°C < TJ < 125°C; VOUT 1.176 1.2 1.224 V Line Regulation 2.5 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 mV Dropout Voltage (Note 3) Maximum Output Current VDO (Note 6) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND 100 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 4) Thermal Shutdown Hysteresis (Note 4) VIN = 3.0 V, VOUT = 1.2 V VPP = 200 mV modulation IOUT = 1 mA, COUT= 10 mF f = 100 kHz − mV 200 mA 4.2 mA 5.8 PSRR 60 dB VOUT = 1.2 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 65 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 3. Not Characterized at VIN = 3.0 V, VOUT = 1.2 V, IOUT = 50 mA. 4. Guaranteed by design and characterization. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Respect SOA. www.onsemi.com 4 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 1.5 V −40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 9) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT ≤ 10 mA VIN 10 mA < IOUT < 50 mA Output Voltage Accuracy Typ Max Unit 2.5 24 V 3.0 24 2.5 V < VIN < 24 V, 0 < IOUT ≤ 10 mA VOUT 1.455 1.5 1.545 V 3.0 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 1.455 1.5 1.545 V 3.0 V < VIN < 24 V, 1 mA < IOUT < 50 mA, −20°C < TJ < 125°C; VOUT 1.470 1.5 1.530 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 mV Dropout Voltage (Note 7) Maximum Output Current Ground Current VDO (Note 10) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND 100 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) VIN = 3.0 V, VOUT = 1.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz − mV 200 mA 4.2 mA 5.8 mA PSRR 56 dB VOUT = 1.5 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 75 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 7. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 50 mA. 8. Guaranteed by design and characterization. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 10. Respect SOA. www.onsemi.com 5 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 1.8 V −40°C ≤ TJ ≤ 125°C; VIN = 2.8V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 13) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT ≤10 mA VIN 10 mA < IOUT < 50 mA Output Voltage Accuracy Typ Max Unit 2.8 24 V 3.0 24 2.8 V < VIN < 24 V, 0 < IOUT < 10 mA VOUT 1.746 1.8 1.854 V 3.0 V < VIN < 24 V, 1 mA < IOUT < 50 mA, −20°C < TJ < 125°C; VOUT 1.764 1.8 1.836 V Line Regulation 3 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 mV Dropout Voltage (Note 11) Maximum Output Current Ground Current VDO (Note 14) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND mV 100 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 12) Thermal Shutdown Hysteresis (Note 12) VIN = 3.0 V, VOUT = 1.8 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz 200 mA 4.2 mA 5.8 mA PSRR 60 dB VOUT = 1.8 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 95 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 11. Not characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 50 mA 12. Guaranteed by design and characterization. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. Respect SOA. www.onsemi.com 6 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 2.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 3.5 Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 2.45 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 mV Dropout Voltage (Note 15) VDO = VIN – (VOUT(NOM) – 75 mV) IOUT = 50 mA VDO 260 Maximum Output Current (Note 18) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 16) Thermal Shutdown Hysteresis (Note 16) Typ 2.5 100 3.2 0 < IOUT < 50 mA, VIN = 24 V VIN = 3.5 V, VOUT = 2.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz Max Unit 24 V 2.55 V 450 mV 200 mA 4.2 mA 5.8 mA PSRR 60 dB VOUT = 2.5 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 115 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 15. Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V. 16. Guaranteed by design and characterization. 17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. Respect SOA. www.onsemi.com 7 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 21) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 4.0 Output Voltage Accuracy 4.0 V < VIN < 24 V, 0< IOUT < 50 mA VOUT 2.94 Typ 3.0 Max Unit 24 V 3.06 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 mV VDO = VIN – (VOUT(NOM) – 90 mV) IOUT = 50 mA VDO Dropout voltage (Note 19) Maximum Output Current Ground current (Note 22) IOUT 0 < IOUT < 50 mA, -40 < TA < 85°C IGND 250 100 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 20) Thermal Shutdown Hysteresis (Note 20) VIN = 4.0 V, VOUT = 3.0 V VPP = 100 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz 400 mV 200 mA 4.2 mA 5.8 mA PSRR 60 dB VOUT = 3 V, IOUT = 50 mA, f = 200 Hz to 100 kHz, COUT = 10 mF VN 135 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH - 25 - °C 19. Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V 20. Guaranteed by design and characterization. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 22. Respect SOA www.onsemi.com 8 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 25) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 4.3 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 3.234 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation IOUT = 0 mA to 50 mA VDO = VIN – (VOUT(NOM) – 99 mV) IOUT = 50 mA VDO 230 Dropout Voltage (Note 23) Maximum Output Current Ground Current Max Unit 24 V 3.3 3.366 V RegLINE 3 10 mV RegLOAD 10 (Note 26) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND Typ 100 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 24) Thermal Shutdown Hysteresis (Note 24) VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz mV 350 mV 200 mA 4.2 mA 5.8 mA PSRR 60 dB VOUT = 4.3 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 140 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 23. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V. 24. Guaranteed by design and characterization. 25. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 26. Respect SOA. www.onsemi.com 9 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 5.0 V −40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 29) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 6.0 Output Voltage Accuracy 6.0V < VIN < 24V, 0< IOUT < 50 mA VOUT 4.9 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, Iout = 1mA Load Regulation IOUT = 0 mA to 50 mA VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 50 mA VDO Dropout Voltage (Note 27) Maximum Output Current Ground Current Max Unit 24 V 5.0 5.1 V RegLINE 3 10 mV RegLOAD 10 30 mV 230 350 mV 200 mA 4.2 mA 5.8 mA (Note 30) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND Typ 90 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 28) Thermal Shutdown Hysteresis (Note 28) VIN = 6.0 V, VOUT = 5.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz PSRR 56 dB VOUT = 5.0 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 190 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 27. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 5.0 V. 28. Guaranteed by design and characterization. 29. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 30. Respect SOA. www.onsemi.com 10 NCP715 ELECTRICAL CHARACTERISTICS − Voltage Version 5.3 V −40°C ≤ TJ ≤ 125°C; VIN = 6.3 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 33) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 6.3 Output Voltage Accuracy 6.3V < VIN < 24V, 0.1 mA< IOUT < 50 mA VOUT 5.194 Typ Max Unit 24 V 5.3 5.406 V 60 mV Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1mA RegLINE 20 Load Regulation IOUT = 0.1 mA to 50 mA RegLOAD 20 VDO = VIN – (VOUT(NOM) – 159 mV) IOUT = 50 mA VDO 230 Dropout Voltage (Note 31) Maximum Output Current Ground Current (Note 34) IOUT 0 < IOUT < 50 mA, −40 < TA < 85°C IGND 90 3.2 0 < IOUT < 50 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 32) Thermal Shutdown Hysteresis (Note 32) VIN = 6.3 V, VOUT = 5.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz mV 350 mV 200 mA 4.2 mA 5.8 mA PSRR 55 dB VOUT = 5.3 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 195 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH − 15 − °C 31. Characterized when VOUT falls 159 mV below the regulated voltage and only for devices with VOUT = 5.3 V. 32. Guaranteed by design and characterization. 33. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 34. Respect SOA. www.onsemi.com 11 NCP715 1.2 2.506 VIN = 3.0 V 1.198 1.197 1.196 VIN = (5.0 − 24.0) V 1.195 1.194 1.193 1.192 −40 NCP715x12xxx CIN = COUT = 1 mF IOUT = 1 mA −20 0 20 VIN = 3.0 V 2.504 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.199 2.502 2.5 VIN = (5.0 − 24.0) V 2.498 2.496 2.494 NCP715x25xxx CIN = COUT = 1 mF IOUT = 1 mA 2.492 40 60 80 100 2.49 −40 120 −20 0 3.315 5.015 3.312 5.01 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 5.02 3.309 3.306 3.303 3.294 −40 NCP715x33xxx CIN = COUT = 1 mF IOUT = 1 mA VIN = 4.3 V to 24 V −20 0 20 40 60 80 TEMPERATURE (°C) 100 5.005 1.192 1.188 VIN = 3.0 V VIN = 5.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 1.184 1.180 1.176 1.172 0 10 20 30 OUTPUT CURRENT (mA) 120 4.995 NCP715x50xxx CIN = COUT = 1 mF IOUT = 1 mA 4.99 4.98 −40 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) 2.504 120 NCP715x25xxx CIN = COUT = 1 mF TA = 25°C 2.500 2.496 2.492 2.488 VIN = 3.5 V VIN = 5.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 2.484 2.480 2.476 40 −20 Figure 7. Output Voltage vs. Temperature OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.196 100 VIN = 6.0 V 5 4.985 120 NCP715x12xxx CIN = COUT = 1 mF TA = 25°C 1.200 80 VIN = (8.0 − 24.0) V Figure 6. Output Voltage vs. Temperature 1.204 60 Figure 5. Output Voltage vs. Temperature 3.318 3.297 40 TEMPERATURE (°C) TEMPERATURE (°C) Figure 4. Output Voltage vs. Temperature 3.3 20 50 2.472 0 Figure 8. Output Voltage vs. Output Current 10 20 30 OUTPUT CURRENT (mA) 40 Figure 9. Output Voltage vs. Output Current www.onsemi.com 12 50 NCP715 NCP715x33xxx CIN = COUT = 1 mF TA = 25°C OUTPUT VOLTAGE (V) 3.308 3.304 3.300 3.296 3.292 VIN = 4.3 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 3.288 3.284 3.280 0 10 5.016 NCP715x50xxx CIN = COUT = 1 mF TA = 25°C 5.008 OUTPUT VOLTAGE (V) 3.312 5.000 4.992 4.984 4.976 VIN = 6.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 4.968 4.960 20 30 40 4.952 50 0 10 OUTPUT CURRENT (mA) Figure 10. Output Voltage vs. Output Current DROPOUT VOLTAGE (mV) TA = 125°C 250 TA = 25°C 200 150 TA = −40°C 100 50 0 300 TA = 125°C 250 TA = 25°C 200 150 100 TA = −40°C 50 0 0 10 20 30 40 0 50 10 OUTPUT CURRENT (mA) 400 GND, QUIESCENT CURRENT (mA) TA = 125°C 250 200 TA = 25°C 150 100 TA = −40°C 50 10 40 50 40 300 0 30 Figure 13. Dropout Voltage vs. Output Current NCP715x50xxx CIN = COUT = 1 mF 350 20 OUTPUT CURRENT (mA) Figure 12. Dropout Voltage vs. Output Current DROPOUT VOLTAGE (mV) 50 NCP715x33xxx CIN = COUT = 1 mF 350 300 0 40 400 NCP715x25xxx CIN = COUT = 1 mF 350 30 Figure 11. Output Voltage vs. Output Current DROPOUT VOLTAGE (mV) 400 20 OUTPUT CURRENT (mA) 20 30 40 50 NCP715x12xxx CIN = COUT = 1 mF TA = 25°C 35 30 25 20 15 IOUT = 0 IOUT = 50 mA 10 5 0 0 5 10 15 20 OUTPUT CURRENT (mA) INPUT VOLTAGE (V) Figure 14. Dropout Voltage vs. Output Current Figure 15. Ground Current vs. Input Voltage www.onsemi.com 13 25 NCP715 IOUT = 0 IOUT = 50 mA 35 40 NCP715x25xxx CIN = COUT = 1 mF TA = 25°C 30 GND, QUIESCENT CURRENT (mA) GND, QUIESCENT CURRENT (mA) 40 25 20 15 10 5 0 0 5 10 15 20 30 25 20 15 10 5 0 25 0 5 10 INPUT VOLTAGE (V) 20 25 Figure 17. Ground Current vs. Input Voltage 4.5 40 NCP715x50xxx CIN = COUT = 1 mF TA = 25°C IOUT = 0 IOUT = 50 mA 35 30 QUIESCENT CURRENT (mA) GND, QUIESCENT CURRENT (mA) 15 INPUT VOLTAGE (V) Figure 16. Ground Current vs. Input Voltage 25 20 15 10 5 0 5 10 15 20 4.3 4.0 3.8 3.5 3.3 3.0 2.8 2.5 −40 0 25 VIN = 3 V VIN = 10 V VIN = 24 V −20 0 INPUT VOLTAGE (V) NCP715x12xxx CIN = COUT = 1 mF IOUT = 0 20 40 60 80 100 120 TEMPERATURE (°C) Figure 18. Ground Current vs. Input Voltage Figure 19. Quiescent Current vs. Temperature 6.0 6.0 NCP715x25xxx CIN = COUT = 1 mF IOUT = 0 5.5 5.0 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) NCP715x33xxx CIN = COUT = 1 mF TA = 25°C IOUT = 0 IOUT = 50 mA 35 4.5 4.0 3.5 3.0 2.5 2.0 −40 VIN = 3.5 V VIN = 10 V VIN = 24 V −20 0 20 40 60 80 100 NCP715x33xxx CIN = COUT = 1 mF IOUT = 0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 −40 120 VIN = 4.3 V VIN = 10 V VIN = 24 V −20 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 21. Quiescent Current vs. Temperature Figure 20. Quiescent Current vs. Temperature www.onsemi.com 14 NCP715 100 NCP715x50xxx CIN = COUT = 1 mF IOUT = 0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 −40 VIN = 6 V VIN = 10 V VIN = 24 V −20 0 NCP715x12xxx COUT = 10 mF VIN = 3.0 V + 200 mVPP Modulation TA = 25°C 80 PSRR (dB) QUIESCENT CURRENT (mA) 6.0 60 IOUT = 1 mA 40 20 IOUT = 50 mA 0 20 40 60 80 100 0.1 120 TEMPERATURE (°C) PSRR (dB) 40 IOUT = 50 mA 0 100 80 0.1 1 100 0.1 1 10 100 Figure 24. PSRR vs. Frequency Figure 25. PSRR vs. Frequency 1.6 IOUT = 1 mA 40 20 IOUT = 50 mA 0.1 IOUT = 10 mA IOUT = 50 mA FREQUENCY (kHz) 60 0 40 0 1000 IOUT = 1 mA FREQUENCY (kHz) NCP715x50xxx COUT = 10 mF VIN = 6.0 V + 200 mVPP Modulation TA = 25°C 1 10 1000 60 20 IOUT = 10 mA 10 100 NCP715x33xxx COUT = 10 mF VIN = 4.3 V + 200 mVPP Modulation TA = 25°C 80 60 20 PSRR (dB) IOUT = 1 mA OUTPUT VOLTAGE NOISE (mV/√Hz) PSRR (dB) 80 10 Figure 23. PSRR vs. Frequency 100 NCP715x25xxx COUT = 10 mF VIN = 3.5 V + 200 mVPP Modulation TA = 25°C 1 FREQUENCY (kHz) Figure 22. Quiescent Current vs. Temperature 100 IOUT = 10 mA IOUT = 10 mA 100 1000 1000 COUT = 10 mF, 65.1 mVrms @ 200 Hz − 100 kHz 1.4 COUT = 4.7 mF, 80.5 mVrms @ 200 Hz − 100 kHz COUT = 2.2 mF, 111.5 mVrms @ 200 Hz − 100 kHz 1.2 COUT = 1.0 mF, 172.1 mVrms @ 200 Hz − 100 kHz COUT = 0.47 mF, 208 mVrms @ 200 Hz − 100 kHz 1.0 0.8 0.6 0.4 0.2 NCP715x12xxx IOUT = 50 mA TA = 25°C VIN = 3 V 0.0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 26. PSRR vs. Frequency Figure 27. Output Spectral Noise Density vs. Frequency www.onsemi.com 15 NCP715 3.5 COUT = 4.7 mF, 128.4 mVrms @ 200 Hz − 100 kHz COUT = 2.2 mF, 152.2 mVrms @ 200 Hz − 100 kHz 3.0 COUT = 1.0 mF, 172.1 mVrms @ 200 Hz − 100 kHz COUT = 0.47 mF, 203.6 mVrms @ 200 Hz − 100 kHz 2.5 NCP715x25xxx IOUT = 50 mA TA = 25°C VIN = 3.5 V 2.0 1.5 1.0 0.5 0.0 0.01 0.1 1 10 100 1000 COUT = 10 mF, 137.1 mVrms @ 200 Hz − 100 kHz 4.5 COUT = 4.7 mF, 145.7 mVrms @ 200 Hz − 100 kHz 4.0 COUT = 2.2 mF, 170.6 mVrms @ 200 Hz − 100 kHz 3.5 COUT = 1.0 mF, 220.8 mVrms @ 200 Hz − 100 kHz COUT = 0.47 mF, 271.1 mVrms @ 200 Hz − 100 kHz 3.0 NCP715x33xxx IOUT = 50 mA TA = 25°C VIN = 4.3 V 2.5 2.0 1.5 1.0 0.5 0.0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 28. Output Spectral Noise Density vs. Frequency Figure 29. Output Spectral Noise Density vs. Frequency 7.0 OUTPUT VOLTAGE NOISE (mV/√Hz) 5.0 COUT = 10 mF, 114.7 mVrms @ 200 Hz − 100 kHz OUTPUT VOLTAGE NOISE (mV/√Hz) OUTPUT VOLTAGE NOISE (mV/√Hz) 4.0 COUT = 10 mF, 186.1 mVrms @ 200 Hz − 100 kHz 6.0 COUT = 4.7 mF, 189.41 mVrms @ 200 Hz − 100 kHz 5.0 COUT = 1.0 mF, 244.5 mVrms @ 200 Hz − 100 kHz COUT = 2.2 mF, 207.6 mVrms @ 200 Hz − 100 kHz COUT = 0.47 mF, 305.0 mVrms @ 200 Hz − 100 kHz 4.0 NCP715x50xxx IOUT = 50 mA TA = 25°C VIN = 6.0 V 3.0 2.0 1.0 0.0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 30. Output Spectral Noise Density vs. Frequency Figure 31. Line Transient Response Figure 32. Line Transient Response Figure 33. Line Transient Response www.onsemi.com 16 NCP715 Figure 34. Load Transient Response Figure 35. Load Transient Response Figure 36. Load Transient Response Figure 37. Input Voltage Turn−On Response Figure 38. Input Voltage Turn−On Response Figure 39. Input Voltage Turn−On Response www.onsemi.com 17 NCP715 APPLICATIONS INFORMATION ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP715 can handle is given by: The NCP715 is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. P D(MAX) + Input Decoupling (CIN) It is recommended to connect at least 0.1 mF Ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCP715 for given application conditions can be calculated from the following equations: P D [ V INǒI GNDǒI OUTǓǓ ) I OUTǒV IN * V OUTǓ (eq. 2) or V IN(MAX) [ Output Decoupling (COUT) P D(MAX) ) ǒV OUT I OUT ) I GND I OUTǓ (eq. 3) For reliable operation, junction temperature should be limited to +125°C maximum. The NCP715 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 0.47 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCP715, and make traces as short as possible. Power Dissipation and Heat sinking The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the www.onsemi.com 18 NCP715 ORDERING INFORMATION Device Nominal Output Voltage Marking Marking Rotation Package NCP715SQ12T2G 1.2 V 5A NCP715SQ15T2G 1.5 V 5C NCP715SQ18T2G 1.8 V 5D NCP715SQ25T2G 2.5 V 5E − SC88A/SC70 (Pb−Free) NCP715SQ30T2G 3.0 V 5F NCP715SQ33T2G 3.3 V 5G NCP715SQ50T2G 5.0 V 5H NCP715MX12TBG 1.2 V Q NCP715MX15TBG (Note 35) 1.5 V R NCP715MX18TBG (Note 35) 1.8 V T NCP715MX25TBG (Note 35) 2.5 V V NCP715MX30TBG (Note 35) 3.0 V Y NCP715MX33TBG (Note 35) 3.3 V 2 NCP715MX50TBG (Note 35) 5.0 V 5 NCP715MX53TBG (Note 35) 5.3 V 5 +180° NCP715SN12T1G 1.2 V PZD − NCP715SN15T1G 1.5 V PZE − NCP715SN18T1G 1.8 V PZF − NCP715SN25T1G 2.5 V PZG − NCP715SN30T1G 3.0 V PZH − NCP715SN33T1G 3.3 V PZJ − NCP715SN50T1G 5.0 V PZK − Shipping† 3000 or 5000 / Tape & Reel (Note 35) 0° XDFN6 1.5 x 1.5 (Pb−Free) TSOP−5 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 35. Products processed after October 1, 2022 are shipped with quantity 5000 units / tape & reel. www.onsemi.com 19 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN6 1.5x1.5, 0.5P CASE 711AE ISSUE B DATE 27 AUG 2015 SCALE 4:1 D L A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.10 AND 0.20mm FROM TERMINAL TIP. L1 DETAIL A ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ ALTERNATE TERMINAL CONSTRUCTIONS E PIN ONE REFERENCE ÉÉ ÉÉ EXPOSED Cu 0.10 C 2X 2X 0.10 C DIM A A1 A3 b D E e L L1 L2 TOP VIEW MOLD CMPD DETAIL B ALTERNATE CONSTRUCTIONS A DETAIL B A3 0.05 C GENERIC MARKING DIAGRAM* A1 0.05 C C SIDE VIEW DETAIL A e SEATING PLANE 1 XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 5X L 3 1 MILLIMETERS MIN MAX 0.35 0.45 0.00 0.05 0.13 REF 0.20 0.30 1.50 BSC 1.50 BSC 0.50 BSC 0.40 0.60 --0.15 0.50 0.70 L2 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 6 4 6X RECOMMENDED MOUNTING FOOTPRINT* b 0.10 C A BOTTOM VIEW 0.05 C B NOTE 3 6X 0.35 5X 0.73 1.80 0.83 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON56376E XDFN6, 1.5 X 1.5, 0.5 P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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