NCS2540

NCS2540 Triple 750 MHz Voltage Feedback Op Amp with Enable Feature NCS2540 is a triple 750 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin. Features http://onsemi.com MARKING DIAGRAM • • • • • • • • −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 750 MHz Typ Slew Rate 1700 V/ms Supply Current 13 mA/amp Input Referred Voltage Noise 5.0 nV/ Hz THD −64 dBc (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 100 mA Enable Pin Available These are Pb−Free Devices 16 1 TSSOP−16 DT SUFFIX CASE 948F NCS 2540 ALYWG G Applications • Line Drivers • Radar/Communication Receivers 3 NORMALIZED GAIN (dB) 0 −3 −6 −9 −12 −15 1k VOUT = 2.0 VPP VOUT = 1.0 VPP VOUT = 0.5 VPP Gain = +2 VS = ±5V RF = 150W RL = 150W 10k 100k 10M 100M 1M FREQUENCY (Hz) 1G 10G 2540 = NCS2540 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) TSSOP−16 PINOUT −IN1 +IN1 VEE1 −IN2 +IN2 VEE2 −IN3 +IN3 1 2 3 4 5 6 7 8 − + (Top View) − + − + 16 VCC1 15 OUT1 14 EN 13 VCC2 12 OUT2 11 9 VCC3 VEE3 10 OUT3 Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 ORDERING INFORMATION Device NCS2540DTBG Package TSSOP−16 (Pb−Free) Shipping† 96 Units / Rail 2500 / Tape & Reel NCS2540DTBR2G TSSOP−16 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 2 1 Publication Order Number: NCS2540/D NCS2540 PIN FUNCTION DESCRIPTION Pin 10, 12, 15 Symbol OUTx Function Output Equivalent Circuit VCC ESD OUT VEE 3, 6, 9 2, 5, 8 VEE +INx Negative Power Supply Non−inverted Input VCC ESD −IN ESD +IN VEE 1, 4, 7 11, 13, 16 14 −INx VCC EN Inverted Input Positive Power Supply Enable EN See Above VCC ESD VEE ENABLE PIN TRUTH TABLE High Enable *Default open state Disabled VCC Low* Enabled −IN +IN OUT CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2540 ATTRIBUTES Characteristics ESD Human Body Model Machine Model Charged Device Model Moisture Sensitivity (Note 1) Flammability Rating Oxygen Index: 28 to 34 Value 2.0 kV 200 V 1.0 kV Level 1 UL 94 V−0 @ 0.125 in 1. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Power Supply Voltage Input Voltage Range Input Differential Voltage Range Output Current Maximum Junction Temperature (Note 2) Operating Ambient Temperature Storage Temperature Range Power Dissipation Thermal Resistance, Junction−to−Air Symbol VS VI VID IO TJ TA Tstg PD RqJA Rating 11 vVS vVS 100 150 −40 to +85 −60 to +150 (See Graph) 179 Unit Vdc Vdc Vdc mA °C °C °C mW °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION MAXIMUM POWER DISSIPATION (mW) The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. 1400 1200 1000 800 600 400 200 0 −50 −25 25 50 0 75 100 AMBIENT TEMPERATURE (C) 125 150 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 NCS2540 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V (10%−90%) AV = +2.0, Vstep = 2.0 V 750 350 40 0.07 0.01 MHz % ° GF0.1dB dG dP TIME DOMAIN RESPONSE SR ts tr tf tON tOFF THD HD2 HD3 IP3 SFDR eN iN Slew Rate Settling Time 0.1% Rise and Fall Time Turn−on Time Turn−off Time 1700 10 2.0 20 40 ns ns ns V/ms ns HARMONIC/NOISE PERFORMANCE Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third−Order Intercept Spurious−Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 2.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 10 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 1.0 MHz f = 1.0 MHz −64 −65 −75 40 65 5.0 4.0 dB dBc dBc dBm dBc nV pA Hz Hz http://onsemi.com 4 NCS2540 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT VIH VIL Input Offset Voltage (Note 3) Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 3) Input Low Voltage (Enable) (Note 3) VO = 0 V VO = 0 V 3.0 1.0 −10 0 6.0 "3.2 "40 "20 +10 mV mV/°C mA nA/°C V V INPUT CHARACTERISTICS VCM CMRR RIN CIN Input Common Mode Voltage Range (Note 3) Common Mode Rejection Ratio (Note 3) Input Resistance Differential Input Capacitance (See Graph) "3.0 40 "3.2 50 4.5 1.0 V dB MW pF OUTPUT CHARACTERISTICS ROUT VO IO VS IS,ON Output Resistance Output Voltage Range Output Current "3.0 "50 0.1 "4.0 "100 10 5.0 13 17 W V mA POWER SUPPLY Operating Voltage Supply Power Supply Current − Enabled per amplifier (Note 3) Power Supply Current − Disabled per amplifier Power Supply Rejection Ratio (Note 3) Crosstalk 3. Guaranteed by design and/or characterization. (See Graph) Channel to Channel, f = 5 MHz 40 V mA IS,OFF PSRR 0.1 56 85 0.3 mA dB dB http://onsemi.com 5 NCS2540 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V (10%−90%) AV = +2.0, Vstep = 1.0 V 550 200 35 0.07 0.02 MHz % ° GF0.1dB dG dP TIME DOMAIN RESPONSE SR ts tr tf tON tOFF THD HD2 HD3 IP3 SFDR eN iN Slew Rate Settling Time 0.1% Rise and Fall Time Turn−on Time Turn−off Time 900 10 1.7 20 40 ns ns ns V/ms ns HARMONIC/NOISE PERFORMANCE Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third−Order Intercept Spurious−Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 10 MHz, VO = 0.5 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 1.0 MHz f = 1.0 MHz −60 −65 −63 35 63 5.0 4.0 dB dBc dBc dBm dBc nV pA Hz Hz http://onsemi.com 6 NCS2540 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT VIH VIL Input Offset Voltage (Note 4) Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 4) Input Low Voltage (Enable) (Note 4) VO = 0 V VO = 0 V 1.5 0.5 −10 0 6.0 "3.2 "40 "20 +10 mV mV/°C mA nA/°C V V INPUT CHARACTERISTICS VCM CMRR RIN CIN Input Common Mode Voltage Range (Note 4) Common Mode Rejection Ratio (Note 4) Input Resistance Differential Input Capacitance (See Graph) "1.1 40 "1.5 50 4.5 1.0 V dB MW pF OUTPUT CHARACTERISTICS ROUT VO IO VS IS,ON IS,OFF PSRR Output Resistance Output Voltage Range Output Current "1.1 "50 0.1 "1.5 "100 5.0 5.0 11 0.1 (See Graph) Channel to Channel, f = 5 MHz 40 56 85 17 0.3 W V mA POWER SUPPLY Operating Voltage Supply Power Supply Current − Enabled per amplifier Power Supply Current − Disabled per amplifier Power Supply Rejection Ratio (Note 4) Crosstalk 4. Guaranteed by design and/or characterization. V mA mA dB dB VIN + − RL VOUT RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 150 kW, RL = 150 W) http://onsemi.com 7 NCS2540 3 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 0 −3 −6 −9 −12 −15 1k VOUT = 2.0 VPP VOUT = 1.0 VPP VOUT = 0.5 VPP Gain = +2 VS = ±5V RF = 150W RL = 150W 10k 100k 10M 100M 1M FREQUENCY (Hz) 1G 10G 12 9 6 3 0 −3 −6 −9 −12 −15 −18 10k Gain = +1 VS = ±5V RF = 150W RL = 150W 100k VOUT = 1.0 VPP VOUT = 0.7 VPP VOUT = 0.5 VPP 1M 10M 100M FREQUENCY (Hz) 1G 10G Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 6 NORMALIZED GAIN (dB) 3 0 −3 −6 −9 −12 VS = ±5V RF = 150W RL = 150W 1M 10M 100M FREQUENCY (Hz) 1G Gain = +2 VOUT = 1.0 VPP Gain = +2 VOUT = 2.0 VPP Gain = +1 VOUT = 1.0 VPP 12 9 NORMALIZED GAIN (dB) 6 3 0 −3 −6 −9 −12 −15 −18 10k Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 Gain = +1 −15 100k VOUT = 0.5 VPP VS = ±5V RF = 150W RL = 150W 100k Gain = +2 10M 100M 1M FREQUENCY (Hz) 1G 10G Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V VS = ±5V Figure 9. Small Signal Step Response Vertical: 20 mV/div Horizontal: 3 ns/div Figure 10. Large Signal Step Response Vertical: 1 V/div Horizontal: 3 ns/div http://onsemi.com 8 NCS2540 −40 −45 DISTORTION (dB) −50 −55 −60 −65 −70 −75 −80 1 10 FREQUENCY (MHz) 100 THD HD2 HD3 Gain = +2 VOUT = 2 VPP VS = ±5V RF = 150W RL = 150W −40 −45 DISTORTION (dB) −50 −55 −60 −65 −70 −75 −80 0 0.5 1 1.5 2 2.5 VOUT (VPP) HD3 3 3.5 4 4.5 THD HD2 Gain = +2 Freq = 5 MHz VS = ±5V RF = 150W RL = 150W Figure 11. THD, HD2, HD3 vs. Frequency Figure 12. THD, HD2, HD3 vs. Output Voltage 50 VS = ±5V VOLTAGE NOISE (nV/√Hz) 40 30 20 10 0 CMRR (dB) −20 −25 −30 −35 −40 −45 −50 10 100 1k FREQUENCY (Hz) 10k 1M −55 10k 100k 1M FREQUENCY (Hz) 10M 100M VS = ±5V Figure 13. Input Referred Voltage Noise vs. Frequency Figure 14. CMRR vs. Frequency 0 DIFFERENTIAL GAIN (%) −10 −20 PSRR (dB) −30 −40 −50 −60 −70 10k 100k 1M FREQUENCY (Hz) 10M 100M VS = ±5V 0.08 Gain = +2 0.06 V = ±5V S RF = 150W 0.04 RL = 150W 0.02 0 −0.02 −0.04 −0.06 −0.08 −0.8 −0.6 −0.4 20MHz 10MHz 3.58MHz 4.43MHz 0.2 0.4 −0.2 0 OFFSET VOLTAGE (V) 0.6 0.8 Figure 15. PSRR vs. Frequency Figure 16. Differential Gain http://onsemi.com 9 NCS2540 0.03 DIFFERENTIAL PHASE (°) 0.02 0.01 0 CURRENT (mA) 10MHz 3.58MHz 4.43MHz 20MHz 14 13 12 11 10 9 8 7 0.4 0.2 −0.2 0 OFFSET VOLTAGE (V) 0.6 0.8 6 4 5 6 7 8 9 10 11 85°C 25°C −40°C −0.01 Gain = +2 VS = ±5V −0.02 RF = 150W RL = 150W −0.03 −0.8 −0.6 −0.4 POWER SUPPLY VOLTAGE (V) Figure 17. Differential Phase Figure 18. Supply Current Per Amplifier vs. Power Supply (Enabled) 0.14 OUTPUT VOLTAGE (VPP) 0.12 CURRENT (mA) 0.10 85°C 0.08 25°C −40°C 0.06 0.04 0.02 0.00 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 8 7 6 5 4 3 2 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 −40°C 85°C 25°C Figure 19. Supply Current Per Amplifier vs. Temperature (Disabled) 100 OUTPUT RESISTANCE (W) 12 VS = ±5V NORMALIZED GAIN (dB) 9 6 3 0 −3 −6 −9 0.01 10k 100k 1M 10M 100M 1G 10G −12 10k Figure 20. Output Voltage Swing vs. Supply Voltage 10pF 10 1 0.1 Gain = +2 VOUT = 0.5 VPP VS = ±5V RF = 150W RL = 150W 100k 1M 100pF 47pF 10M 100M 1G 10G FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. Output Resistance vs. Frequency Figure 22. Frequency Response vs. Capacitive Load http://onsemi.com 10 NCS2540 Output waveform: Squarewave, 32 MHz, 600 mVPP VS = ±5V EN OUT EN VS = ±5V OUT Output waveform: Squarewave, 32 MHz, 600 mVPP Figure 23. Turn ON Time Delay Vertical: 500 mV/div (Enable), 200 mV/div (Output) Horizontal: 5 ns/div 0 −10 −20 CROSSTALK (dBc) −30 −40 −50 −60 −70 −80 −90 −100 1 10 100 FREQUENCY (MHz) 1000 Gain = +2 VS = ±5V RF = 150W RL = 150W Channel 1 NORMALIZED GAIN (dB) Figure 24. Turn OFF Time Delay Vertical: 500 mV/div (Enable), 200 mV/div (Output) Horizontal: 10 ns/div 6 4 2 0 −2 −4 −6 10k CH1 CH2 CH3 Channel 3 Gain = +2 VS = ±5V RF = 150W RL = 150W 100k 10M 100M 1M FREQUENCY (Hz) 1G 10G Figure 25. Crosstalk vs Frequency (Crosstalk measured on Channel 2 with input signal on Channel 1 and 3) Figure 26. Channel Matching (dB) vs Frequency http://onsemi.com 11 NCS2540 Printed Circuit Board Layout Techniques Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. Video Performance This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. ESD Protection to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and –IN pins are rated at 0.8kV while all other pins are rated at 2.0kV. VCC External Pin VEE Internal Circuitry All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 27). These diodes provide moderate protection Figure 27. Internal ESD Protection http://onsemi.com 12 NCS2540 PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U S M TU S V S K K1 2X L/2 16 9 J1 B − U− L PIN 1 IDENT. 1 8 SECTION N−N J N 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 0.15 (0.006) T U S A −V− N F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D G H DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.36 16X 16X 1.26 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 13 ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ −W− 0.65 PITCH DIMENSIONS: MILLIMETERS NCS2540 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 14 NCS2540/D