NCV1009

NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and temperature drift. A third terminal allows the reference voltage to be adjusted ±5.0% to calibrate out system errors. In many applications, the NCV1009Z can be used as a pin−to−pin replacement of the LT1009CZ and the LM136Z−2.5 with the external trim network eliminated. Features • 0.2% Initial Tolerance Max. • Guaranteed Temperature Stability • Maximum 0.6 W Dynamic Impedance • Wide Operating Current Range • Directly Interchangeable with LT1009 and LM136 for Improved Performance • No Adjustments Needed for Minimum Temperature Coefficient • Meets Mil Std 883C ESD Requirements • Extended Operating Temperature Range for Use in Automotive Applications • NCV Prefix, for Automotive and Other Applications Requiring Site and Change Control • Pb−Free Packages are Available 8 1 http://onsemi.com MARKING DIAGRAMS 8 SOIC−8 D SUFFIX CASE 751 1 1009D ALYW G TO−92 Z SUFFIX CASE 29 1009Z ALYWWG G A L Y WW, W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS NC NC NC GND 1 8 NC NC VREF ADJ. PIN 5.0 V−35 V Pin 1. ADJ. PIN 2. VREF 3. GND 1 23 3.6 kW VREF ADJ 10 kW∗ TRIM ORDERING INFORMATION Device NCV1009D NCV1009DR2 *±5.0% Trim Range If the external trim resistor is not used, the “ADJ. PIN” should be left floating. The 10k trim potentiometer does not effect the temperature coefficient of the device. NCV1009DR2G NCV1009Z NCV1009ZG Package SOIC−8 SOIC−8 SOIC−8 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping 95 Units/Rail 2500 Tape & Reel 2500 Tape & Reel 2000 Units/Rail 2000 Tape & Reel GND Figure 1. Application Diagram †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NCV1009/D © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 9 NCV1009 VREF 10 pF P3 N14 N16 15 pF P1 14 kW 20 pF P2 TRIM 20 kW 20 kW 10.15 kW 63 kW N7 N12 N13 30 kW N9 N10 1.14 kW N11 6.785 kW D1 N15 ADJ N2 N1 N3 N4 N8 N5 N6 1.14 kW SUBSTRATE GND Figure 2. Block Diagram http://onsemi.com 2 NCV1009 MAXIMUM RATINGS* Rating Reverse Current Forward Package Thermal Resistance, SOIC−8: Junction−to−Case, RqJC Junction−to−Ambient, RqJA Package Thermal Resistance, TO−92: Junction−to−Case, RqJC Junction−to−Ambient, RqJA Operating Temperature Range Storage Temperature Range Lead Temperature Soldering: Wave Solder (through hole styles only) (Note 1) Reflow: (SMD styles only) (Notes 2, 3) Value 20 10 45 165 − 170 −40 to +125 −65 to +150 260 peak 240 peak Unit mA mA °C/W °C/W °C/W °C/W °C °C °C °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *The maximum package power dissipation must be observed. 1. 10 second maximum 2. 60 second maximum above 183°C. 3. −5°C / +0°C allowable conditions. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.) Characteristic Reverse Breakdown Voltage Reverse Breakdown Voltage Reverse Breakdown Voltage Change with Current Reverse Dynamic Impedance IR = 1.0 mA −40°C ≤ TA ≤ 125°C 400 mA ≤ IR ≤ 10 mA (Note 4) IR = 1.0 mA (Note 4) Temperature Stability Average Temperature Coefficient Long Term Stabilty 0°C ≤ TA ≤ 70°C, (Note 5) 0°C ≤ TA ≤ 70°C, (Note 5) TA = 25°C ±0.1 C, IR = 1.0 mA Test Conditions Min 2.492 2.480 − − − − − − − Typ 2.500 2.500 2.6 3.0 0.2 0.4 1.8 15 20 Max 2.508 2.508 5.0 6.0 1.0 1.4 − − − Unit V V mV mV W W mV ppm/°C ppm/kHr 4. Denotes the specifications which apply over full operating temperature range. 5. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. http://onsemi.com 3 NCV1009 TYPICAL PERFORMANCE CHARACTERISTICS 10−1 REVERSE VOLTAGE CHANGE (mV) 1.4 1.8 REVERSE VOLTAGE (V) 2.2 2.6 5 REVERSE CURRENT (A) 10−2 4 3 10−3 2 10−4 TJ = 25°C 1.0 1 10−5 0.5 0 0 4 8 12 16 REVERSE CURRENT (mA) 20 Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Change in Reverse Voltage vs. Reverse Current 1.2 FORWARD VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 TJ = 25°C 100 DYNAMIC IMPEDANCE (W) 0.01 0.1 1.0 10 10 1.0 0 0.001 0.1 10 100 FORWARD CURRENT (mA) 1.0 k 10 k FREQUENCY (Hz) 100 k Figure 5. Forward Voltage vs. Forward Current Figure 6. Dynamic Impedance vs. Frequency 250 FORWARD VOLTAGE (V) VOLTAGE SWING (V) IR = ImA TJ = 25°C NOISE (nV/√HZ) 200 0 2.5 2.0 1.5 1.0 0.5 0 5.0 k INPUT OUTPUT 150 100 10.0 4.0 0 10 100 1.0 k FREQUENCY (Hz) 10 k 100 k 50 0 1 TIME (ms) 20 Figure 7. Zener Noise Voltage vs. Frequency Figure 8. Response Time http://onsemi.com 4 NCV1009 PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AG NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 −X− A 8 5 B 1 4 S 0.25 (0.010) M Y M −Y− G C −Z− H D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NCV1009 PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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